A comparative study of a Heusler alloy Co2FeGe using LSDA and LSDA+U

We have calculated the on-site Coulomb repulsion (U) for the transition elements Co and Fe. To study the impact of Hubbard potential or on-site Coulomb repulsion (U) on structural and electronic properties the calculated values of U were added on GGA and LSDA. We performed the structure optimization of Co₂FeGe based on the generalized gradient approximation (GGA and GGA+U). The calculation of electronic structure was based on the full potential linear augmented plane wave (FP-LAPW) method and local spin density approximation (LSDA) as well as exchange correlation LSDA+U. The Heusler alloy Co₂FeGe fails to give the half-metallic ferromagnetism (HMF) when treated with LSDA. The LSDA+U gives a good result to prove that Co₂FeGe is a HMF with a large gap of 1.10 eV and the Fermi energy (E_F) lies at the middle of the gap of minority spin. The calculated density of states (DOS) and band structure show that Co₂FeGe is a HMF when treated with LSDA+U.     

Ab initio study of the structural,electronic, elastic and magnetic properties of Cu2GdIn,Ag2GdIn and Au2GdIn

We preformed first-principle calculations for the structural, electronic, elastic and magnetic properties of Cu₂GdIn, Ag₂GdIn and Au₂GdIn using the full-potential linearized augmented plane wave (FP-LAPW) scheme within the generalized gradient approximation by Wu and Cohen (GGA-WC), GGA+U, the local spin density approximation (LSDA) and LSDA+U. The lattice parameters, the bulk modulus and its pressure derivative and the elastic constants were determined. Also, we present the band structures and the densities of states. The electronic structures of the ferromagnetic configuration for Heusler compounds (X₂GdIn) have a metallic character. The magnetic moments were mostly contributed by the rare-earth Gd 4f ion.     

The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

The electronic structure and ferromagnetic stability of Co-doped SnO₂ are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U_Co transforms the ground state of Co-doped SnO₂ to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U_Co calculations show that the pure substitutional Co defects in SnO₂ cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U_Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U_Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U_O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U_Co calculations are not changed by the correction of band gap.     

First principles investigation on the band gap of the ground state of LaCoO3

The band gap of LaCoO₃ in ground state is obtained from the generalized gradient approximation (GGA) with on-site Coulomb correction (GGA+U) calculations (U=3.4 eV, J=0.49 eV ), which agrees with the experimental result very well. A series of local spin density approximation (LSDA) with on-site Coulomb corrections (LSDA+U) and GGA+U calculations are performed with various U and J parameters to understand the recently published band gaps of 1.43 eV from LSDA+U (U=8.33 eV ) and 1.0 eV from GGA+U (U=2.7) calculations. The partial density of states (PDOSs) are presented to investigate the origin of the band gap.     

First-principles study on the magnetism and electronic structure in 3d transition metal (X=Sc,V, Cr,Mn, Fe,Ni, Cu) doped CoO

We have studied the electronic structure and magnetism of the single transitional metal element X=Sc, V, Cr, Mn, Fe, Ni, Cu-doped CoO systems by first-principles calculations. At X=Sc, Cr, Cu, the binding energy of the doped systems is lower than pure CoO, suggesting that these systems are energetically stable. In the Sc, V, Cr, Mn, Fe, Ni, Cu-doped 2×2×2 CoO supercells, the total magnetic moments are 3.03, 5.64, 6.80, 7.70, 6.93, 2.30 and 1.96 μ_B, respectively. At X=Cr and Fe, the doped CoO systems are half-metallic with a high spin polarization. The large magnetic moment and high spin polarization in the Cr and Fe-doped CoO are important for the design of the spintronic devices.     

Magnetic and electronic structure studies of the perovskite oxide Nd2/3Sr1/3MnO3 from the first principle calculation

Generalized gradient approximation (GGA) and GGA + U (U denotes on-site Coulomb interactions) methods are applied to investigate the magnetic and electronic structures of the perovskite oxide Nd_2/3Sr_1/3MnO₃. Under GGA the compound prefers ferrimagnetic ordering in which Nd sublattice is spin-antiparallel to Mn sublattice. Nd 4f states cross over the Fermi level under GGA, leading the ferrimagnetic Nd_2/3Sr_1/3MnO₃ to a metallic character. The on-site Coulomb interactions should be included to emphasize the localized feature of Nd 4f states. Under GGA + U, the spins of Nd and Mn sublattices tend to be parallel in the ground state, and fully spin-polarized Mn 3d electrons yield a half-metallic band structure for the ferromagnetic Nd_2/3Sr_1/3MnO₃. The ferromagnetic coupling between Nd and Mn sublattices is ascribed to the super-exchange interaction between Nd 4f and Mn 3d (t2g) electrons via O 2p electrons.     

Electronic and magnetic properties of NdCrSb3: A first principles study

The electronic and magnetic properties of NdCrSb₃ are calculated by the first principles full-potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). Density of states (DOS), magnetic moments and band structures of the system are presented. For the exchange and correlation energy, local spin density approximation (LSDA+U) with the inclusion of Hubbard potential U is used. Our calculation shows that the 3d state electron of Cr and 4f state electrons of Nd contribute to the total DOS and the band structures. The effective magnetic moment is found to be 5.77μ_B, which is comparable to the earlier experimental results of NdCrSb₃.     

TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

Antiferromagnetism of perovskite EuZrO3 from a first-principles study

Electronic structure and magnetic properties of perovskite EuZrO₃ have been investigated using the ab initio density-functional calculations with local spin density approximation (LSDA) and LSDA+U methods. The results that are obtained reveal that the antiferromagnetic G-type arrangement is more stable than other possible configurations. The ground G-AFM state shows the insulator property with an energy gap of about 0.27 eV at U=0 eV. It is found that the energy gap strongly depends on the correction potential parameter of U due to the strong interaction of the f electrons of Eu in EuZrO₃. The spin magnetic moment of Eu ions is predited to be 6.82μ_B, which is in well agreement with the experimental result of 6.87μ_B.     

Pressure and disorder effects on the half-metallic character and magnetic properties of the full-Heusler alloy Co2FeSi

We investigate the pressure and site disorder effects on the half-metallicity and magnetic properties of the full-Heusler alloy Co₂FeSi using first-principles density functional theory within the GGA and GGA+U schemes. The calculated lattice constant, bulk modulus and total magnetic moments are in excellent agreement with recent experiments. The volume compression leads to a slight increase of the minority band gap, i.e., the half-metallic properties of Co₂FeSi can maintain under pressure. The disorder calculations reveal that Fe–Co type disorder significantly destroys the half-metallic character and reduces the spin polarization of Co₂FeSi while disorder between Fe and Si can maintain half-metallic properties. Our results also show that the Fe–Co type disorder leads to degradation of the magnetism while the Fe–Si type disorder affects hardly the magnetism as observed in Co₂FeSi.     

First-principles study of electronic structure and magnetism of cubic Al1−xErxN using the LSDA+U approach

First-principles calculations, by means of the full-potential augmented plane wave method using the LSDA+U approach (local spin density approximation with Hubbard-U corrections), have been carried out for the electronic structure of the Al_0.75Er_0.25N. The LSDA+U method is applied to the rare-earth 4? states. We have investigated the electronic and magnetic properties.The Al_0.75Er_0.25N is shown to be a semiconductor, where the filled ? states are located in the valence bands and the empty ones above the conduction band edge. The magnetic interaction of the rare-earth ion with the host states at the valence and conduction band edges has been investigated and discussed.     

Electronic structure of cubic ErxGa1−xN using the LSDA+U approach

Electronic structure calculations were performed for substitutional erbium rare-earth impurity in cubic GaN using density-functional theory calculations within the LSDA+U approach (local spin-density approximation with Hubbard-U corrections). The LSDA+U method is applied to the rare-earth 4f states. The Er_xGa_1−xN is found to be a semiconductor, where the filled f-states are located in the valence bands and the empty ones above the conduction band edge. The filled and empty f-states are also shown to shift downwards and upwards in the valence and conduction bands, respectively, with increase in the U potentials.     

Full-Heusler合金X2YGa(X=Co,Fe,Ni;Y=V,Cr,Mn)的电子结构、磁性及半金属特性的第一性原理研究

利用基于密度泛函理论的全势线性缀加平面波方法,结合广义梯度近似,对full-Heusler X₂YGa(X=Co,Fe,Ni;Y=V,Cr,Mn)合金的电子结构、磁性及半金属特性进行了研究,并讨论了自旋-轨道耦合作用对它们的影响.计算结果表明,自旋-轨道耦合作用对full-Heusler X₂YGa(X=Co,Fe,Ni;Y=V,Cr,Mn)合金的电子结构,磁性与半金属特性的影响很小. 当未考虑自旋-轨道耦合作用时,Co₂VGa,Co₂CrGa,和Fe₂CrGa合金为半金属或准半金属铁磁体,加入自旋-轨道耦合作用后体系的自旋极化率将降低1%左右, 它们依然保持很高的自旋极化率.Fe₂MnGa,Co₂MnGa,Ni₂CrGa和Ni₂MnGa合金为一般铁磁体,Fe₂VGa和Ni₂VGa合金为顺磁体. 关键词： 半金属特性 自旋-轨道耦合 Heusler合金 全势线性缀加平面波方法(FLAPW)     

后钙钛矿CaRhO3的电子结构和磁学性质的第一性原理研究

采用基于密度泛函理论的投影平面波方法,对后钙钛矿结构(Ppv)的CaRhO₃的电子结构和磁学性质进行了研究.广义梯度(GGA)近似下的计算表明,Ppv-CaRhO₃的基态为铁磁性半金属,Rh⁴⁺离子的磁矩大小为0.57μ_B,具有低自旋态构型;而考虑在位库仑作用修正的GGA+U计算,得到了与实验结果相符的反铁磁绝缘体基态,表明后钙钛矿结构中4d电子之间的关联效应对体 关键词： 电子结构 磁学性质 金属绝缘体转变     

The origin of an elastic line in the L 3 x-ray emission spectrum of metallic manganese

A strong elastic line has been found in the L ₃ x-ray emission spectrum of metallic Mn. To unravel its physical nature, the ground-state properties of α-Mn were studied in comparison with those of 3d metals (Cr and Fe in bcc structure), as well as the properties of the L ₃ absorption final states of these three transition metals. To model the electronic structure, LSDA band-structure calculations of Cr, Mn, and Fe were carried out, and L ₃ absorption spectra of these metals were computed in the atomic approximation. A joint analysis of the properties of the ground state and of the final absorption state excited by an x-ray-produced core hole suggests that the elastic line in the α-Mn spectra should be assigned to the specific character of the absorption final-state multiplet.     

Density functional study of the half-metallic ferromagnetism in Co-based Heusler alloys Co2MSn (M = Ti, Zr, Hf) using LSDA and GGA

The half-metallic state in the Heusler alloys Co₂MSn (M = Ti, Zr, Hf) was studied by means of first principles calculation, using both, the Local Spin Density Approximation (LSDA) and the Generalized Gradient Approximation (GGA) to the exchange-correlation energy. While the GGA calculation shows that the three alloys are half-metallic ferromagnets, the LSDA results show that they are ferromagnetic but not half-metallic systems. The difference between the exchange-correlation functionals is analyzed through the electronic structure of the alloys. The origin of the gap in the minority spin channel for GGA calculations is discussed.     

First-principles calculations on TiO2 doped by N, Nd, and vacancy

First-principles density functional theory calculations have been carried out to investigate electronic structures of anatase TiO₂ with substitutional dopants of N, Nd, and vacancy, which replace O, Ti, and O, respectively. The calculation on N-doped TiO₂ with the local density approximation (LDA) demonstrates that N doping introduces some states located at the valence band maximum and thus makes the original band gap of TiO₂ smaller. Examining the effect of the strong correlation of Nd 4f electrons on the electronic structure of Nd-doped TiO₂, we have obtained the half-metallic ground state with the LDA and the insulating ground state with the LDA+U (Hubbard coefficient), respectively. In addition, the calculation on vacancy-doped TiO₂ with the LDA shows that a vacancy can induce some states in the band-gap region, which act as shallow donors.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.     

Properties of hexagonal Al2Ge2RE (RE=Y,La,Ce,Nd,Eu,Gd,Tb,Y b and Lu) : A first-principles study

In this work, we present a study of the structural, elastic and electronic properties of the Al₂Ge₂RE (RE=Y, La, Ce, Nd, Eu, Gd, Tb, Yb and Lu) through the approaches of generalized gradient approximation (GGA) and local spin density approximation with the Hubbard energy (LSDA+U) based on density-functional theory. For most of the compounds (RE=Y, La, Ce, Nd, Eu, Yb and Lu), the results of the structural constants calculated from the approach of LSDA+U are in good agreement with the reported experimental data. Both the approaches of GGA and LSDA+U have been used to calculate DOS. Compared with the results of the GGA approach, the LSDA+U is more credible because it can show the influence of RE-f states and the RE-f states play an important role in the compound. The magnetic property has been investigated according to the result of DOS and it shows that the Al₂Ge₂Y, Al₂Ge₂La, Al₂Ge₂Y b and Al₂Ge₂Lu do not exhibit obvious magnetic property, while the other five ternary compounds are magnetic. The Voigt-Reuss-Hill (VRH) approach is used to calculate the elastic properties including bulk and shear moduli. The results of the calculated Poisson’s ratio ν and the B/G ratio demonstrate that all the Al₂Ge₂RE ternary compounds are brittle materials. The compounds, i.e. Al₂Ge₂Nd, Al₂Ge₂Eu, Al₂Ge₂Gd and Al₂Ge₂Tb which are mechanically unstable, display differences with the other five in the elastic properties.