半导体光放大器亚皮秒量级超快动态特性的研究

通过考虑脉冲频谱的增益色散，提出了一个分析亚皮秒光脉冲在半导体光放大器(SOA)中传输的新思路.分别对超快光脉冲在时域和频域内进行离散化，建立了一个更为合理的传输数值模型.基于该模型，观察到了脉冲频谱的明显漂移，并探讨了漂移量与脉冲载波波长、脉冲能量、脉冲宽度、SOA长度和注入电流等外部条件之间的关系，从理论上解释了文献没有证实的实验结果.同时，基于交叉增益调制原理，利用双光束结构，描述了载流子加热、光谱烧孔效应和双光子吸收等非线性效应引起的增益压缩.理论分析的结果为改善SOA的动态特性提供了指导. 关键词： 半导体光放大器 超快非线性效应 增益色散性     

增益半导体光放大器的特性

为满足半导体光放大器（SOA）在光纤到户FTTH系统接入网中的广泛应用,提出了基于光纤光栅外腔反馈型GC-SOA结构的全光增益机制,窄线宽激光光源经可变衰减器、隔离器和光纤光栅注入到SOA中,SOA的输出光经隔离器和光纤光栅送至光谱分析仪,通过光纤光栅反馈输入SOA形成钳制激光。对GC-SOA的阈值特性、增益特性及开关特性进行分析,结果表明:当注入电流小于GC-SOA的阈值电流时,增益随注入电流的增加而增加;当注入电流大于GC-SOA的阈值电流后,其增益不再随注入电流的变化而变化,实现了SOA的增益稳定,使SOA的饱和输出功率得到了提高。     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导. 关键词： 半导体光放大器 折射率动态特性 增益色散 群速度色散     

Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities

Optical gain that could ultimately lead to light emission from silicon is a goal that has been pursued for a long time by the scientific community. The reason is that a silicon laser would allow for the development of low-cost, high-volume monolithic photonic integrated circuits created using conventional CMOS technologies. However, the silicon indirect bandgap—requiring the participation of a proper phonon in the process of light emission—is a roadblock that has not been overcome so far. A high-Q optical cavity allowing a very high density of states at the desired frequencies has been proposed as a possible way to get optical gain. However, recent theoretical studies have shown that the free-carrier absorption is much higher than the optical gain at ambient temperature in an indirect bandgap semiconductor, even if a high-Q optical cavity is formed. In this work, we consider a particular case in which the semiconductor material is engineered to form an acousto-optical cavity where the photon and phonon modes involved in the emission process are simultaneously confined. The acousto-optical cavity confinement effect on the light emission properties is characterized by a compound Purcell factor which includes both the optical as well as the acoustic Purcell factor (APF). A theoretical expression for the APF is also introduced. Our theoretical results suggest that creating an acousto-optical cavity the optical gain can overcome the photon loss due to free carriers as a consequence of the localization of phonons even at room temperature, paving the way towards the pursued silicon laser.     

集成双波导半导体光放大器光开关实现波长转换的理论研究

建立了基于集成双波导半导体光放大器的光开关(ITG-SOA-Switch)的理论分析模型.与半导体光放大器(SOA)的特性相比较表明，由于ITG-SOA-Switch合并了多种物理效应，故其静态增益饱和曲线在饱和功率点附近具有大幅度陡峭下降的独特性质.理论分析和10 Gbit/s波长转换模拟结果显示，恰当地选择输入抽运光的功率范围，ITG-SOA-Switch波长转换器输出转换光的消光比特性较之输入抽运光会有显著的改善. 关键词： 波长转换 半导体光放大器 集成双波导半导体光放大器 光开关     

基于半导体光放大器和光学滤波器的同相波长转换理论研究

采用半导体光放大器(SOA)级联滤波器的方案可以实现高速全光波长转换,其中,滤波器实质上是对SOA输出信号的光谱进行优化操作.文中利用带通滤波器(BPF)和延时干涉仪(DI)组成的光谱优化器,不仅实现了80Gbit/s同相波长转换,而且基于遗传算法设计光谱优化器的参数,极大地提高了输出信号的质量.同时,也从理论上分析了SOA中超快带内效应对信号光谱的影响以及光谱优化器中BPF和DI的消光比对输出信号质量的影响.     

Ultrafast optical study of magnons in the ferromagnetic semiconductor GaMnAs

Coherent oscillations of the magnetization were observed in magneto-optical Kerr measurements in thin films of the ferromagnetic semiconductor GaMnAs. For magnetic fields oriented in the film plane, two precession modes were observed. Their frequencies increase with the field when it is along the [100] axis, whereas they behave non-monotonically when the field is oriented along the in-plane hard axis [110]. Spectra are also presented for fields applied normal to the film plane. From the measured field-dependence of the magnon frequency, the spin stiffness and magnetic anisotropy constants were obtained.     

基于半导体光放大器交叉偏振调制的波长转换理论研究

在半导体光放大器中,采用由张应变引起的自身双折射理论模型对交叉偏振调制型全光波长转换器的波长转换特性进行了数值研究,并对数值结果与相关实验进行了对比。结果表明:通过调节系统参量,可以实现同相或反相波长转换;同相和反相波长转换时输出的信号啁啾、消光比和眼图具有不同特性;随着数据传输速率的增加,输出信号的眼图张开度减小,啁啾变大。     

Theoretical analysis of pattern effect suppression in semiconductor optical amplifier utilizing optical delay interferometer

The ability of an optical delay interferometer (ODI) to suppress the pattern effect that is inherently present in a straightforward, solitary semiconductor optical amplifier (SOA) whose dynamic response is slower than the period of its driving high-speed return-to-zero (RZ) data signal is theoretically investigated. For this purpose an existing comprehensive model that simulates and links the operation of these two elements is methodically applied to their concatenated configuration. In this manner an extensive set of curves is numerically obtained, which allow to analyze and assess the impact of the input pulse energy and width as well as of the SOA carrier lifetime, linewidth enhancement factor and small signal gain on the amplitude modulation of the transmitted sequence at the output of each one of these block units. Their thorough study and interpretation reveals that the employment of the ODI can significantly reduce the value of this quality metric resulting from a single SOA only. The main offered benefit, however, is that any technical restrictions regarding the involved critical parameters can be considerably relaxed while at the same time their useful operational range can be extended. These important findings highlight the necessity of placing this passive device after the SOA and exploiting it in order to effectively alleviate the detrimental pattern-dependent degradation. This fact in conjunction with its overall practicality renders it a promising candidate for enhancing, within the frame of the proposed scheme, the performance of SOAs that are employed as pure amplification elements in fiber-optic communication systems and networking applications.     

半导体光放大器中垂直双抽运四波混频效应的理论研究

建立了输入信号光偏振方向任意情况下的半导体光放大器(SOA)中 垂直双抽运四波混频(FWM)效应的完整宽带理论模型. 以基于SOA的垂直双抽运FWM型全光波长转换器为例, 通过数值模拟的方法, 理论研究了输入信号光与两抽运光功率、两抽运光与信号光之间的波长失 谐量和输入信号光偏振方向等工作参数对SOA的垂直双抽 运FWM效应及基于SOA的垂直双抽运FWM型波长转换器特性的影响.     

Lattice vibrations and optical properties of wurtzite InN in the reststrahlen region

The lattice vibrations and optical properties of wurtzite InN are studied by the first-principle calculations based on the density functional theory. The phonon spectra of lattice vibration are calculated under the Generalized-Gradient Approximation (GGA). The optical properties are investigated based on the phonon spectra. The phonon dispersion curve and the phonon density of state are calculated and compared with the existing experimental data. The calculation indicates that InN has a metal-like behavior. Our calculation shows that the fundamental vibration is therefore infrared active in wurtzite structure semiconductors.     

A novel approach to all-optical wavelength conversion by utilizing a reflective semiconductor optical amplifier in a co-propagation scheme

Nonlinear optical gain modulation in an InGaAsP/InP bulk reflective semiconductor optical amplifier (RSOA) is studied. The differences of the optical properties between RSOAs and conventional SOAs are initially investigated. All-optical wavelength conversion based on nonlinear gain modulation in RSOAs is demonstrated at a bit rate of 2.488 Gbit/s. It is shown that a bit-error-rate of <10⁻⁹ can be achieved and an extinction ratio of >9 dB can be obtained at a bit rate of 2.488 Gbit/s with a 2³¹-1 non-return-to-zero (NRZ) pseudorandom bit sequence (PRBS). In comparison with conventional SOAs, wavelength conversion by RSOAs shows much improved performances in high-speed all-optical wavelength conversions.     

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

The effects of indium segregation on the valence band structures and the optical gain in GaInAs/GaAs quantum wells are theoretically investigated using 4×4 Luttinger–Kohn Hamiltonian matrix. The method for the band structure calculation is based on the finite difference method, then the optical gain is calculated using the density matrix approach. For segregation coefficient R less than 0.7, indium segregation has little influence on optical gain, but for segregation coefficient R more than 0.7, it has a significant influence on optical gain, the gain spectra can be blue-shifted with the increase of segregation coefficient R, and the peak gains are decreased as segregation coefficient R increases, which is mainly due to the reduction of the carrier population inversion.     

Bandgap narrowing in the layered oxysulfide semiconductor Ba_3Fe_2O_5Cu_2S_2: Role of FeO_2 layer

A new layered Cu-based oxychalcogenide Ba_3Fe_2O_5Cu_2S_2 has been synthesized and its magnetic and electronic properties were revealed. Ba_3Fe_2O_5Cu_2S_2 is built up by alternatively stacking [Cu_2S_2]~(2-) layers and iron perovskite oxide[(FeO_2)(BaO)(FeO_2)]~(2-)layers along the c axis that are separated by barium ions with Fe~(3+) fivefold coordinated by a square-pyramidal arrangement of oxygen. From the bond valence arguments, we inferred that in layered CuC h-based(Ch =S, Se, Te) compounds the +3 cation in perovskite oxide sheet prefers a square pyramidal site, while the lower valence cation prefers the square planar sites. The studies on susceptibility, transport, and optical reflectivity indicate that Ba_3Fe_2O_5Cu_2S_2 is an antiferromagnetic semiconductor with a Ne′el temperature of 121 K and an optical bandgap of 1.03 eV. The measurement of heat capacity from 10 K to room temperature shows no anomaly at 121 K. The Debye temperature is determined to be 113 K. Theoretical calculations indicate that the conduction band minimum is predominantly contributed by O 2p and 3 d states of Fe ions that antiferromagnetically arranged in FeO_2 layers. The Fe 3d states are located at lower energy and result in a narrow bandgap in comparison with that of the isostructural Sr_3Sc_2O_5Cu_2S_2.     

Novel automatic control for the optimum optical gain and phase differences in SOA-MZI wavelength converter: Theory and experiment

We have proposed, simulated, and experimentally verified the novel automatic control method and apparatus to automatically adjust and constantly maintain the optimum optical gain and phase differences in order to achieve the automatically optimized semiconductor optical amplifier (SOA)-Mach-Zehnder interferometer (MZI) wavelength converter (WC) with wide input power dynamic range (IPDR) and maximum extinction ratio (ER). Our automatic control algorithm is proposed through the results of simulation and its validity is confirmed through the experiment.     

Theoretical study of gain distortions in dual-pump fiber optical parametric amplifiers

We study analytically and numerically the small signal gain in dual-pump fiber optical parametric amplifiers by including the phase modulation of the pump waves needed for practically increasing the stimulated Brillouin scattering threshold. As for the single-pump case, we show that large signal gain distortions are generated under co-phase modulation, which depend on the rise/fall time of the phase modulation and on the fiber dispersion slope. However, it is clearly confirmed that the counter-phase modulation scheme allows to efficiently suppress these gain distortions over the whole flat gain region. In addition, we demonstrate through realistic numerical simulations that this useful technique overcomes the additional impact of pump-phase modulation to amplitude modulation conversion and zero-dispersion wavelength variations.     

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Optical gain characteristics of Ge_(1_x)Snμx are simulated systematically.With an injection carrier concentration of 5×10~(18)/cm~3 at room temperature,the maximal optical gain of Ge_(0.922)Sn_(0.078) alloy(with n-type doping concentration being 5×10~(18)/cm~3) reaches 500 cm~(-1).Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge_(0.554)Si_(0.289)Sn_(0.157)/Ge_(0.922)Sn_(0.078)/Ge_(0.554)Si_(0.289)Sn_(0.157) short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density J_(th)are 6.47 kA/cm~2(temperature:200 K,and λ=2050 nm),10.75 kA/cm~2(temperature:200 K,and λ=2000 nm),and23.12 kA/cm~2(temperature:300 K,and λ=2100 nm),respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge_(1-x)Sn_x laser.     

闪锌矿结构AlN、AlP、AlAs和AlSb电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论下的第一性原理平面波赝势从头算量子力学方法,对闪锌矿结构AlN、AlP、AlAs和AlSb的电子结构和光学性质进行了研究。分析比较了这些化合物的能带结构、态密度、介电函数及折射率等性质,总结Al与不同Ⅴ族元素形成化合物时的性质变化规律。结果表明,四种材料有着相似的能带结构,都是间接带隙宽禁带半导体,但是在导带底AlN的能态结构与其它三种材料明显不同。随着从AlN到AlSb的变化,光学性质曲线发生红移。     

半导体光放大器的光-光互作用及其应用

半导体光放大器（SOA）中的非线性系数约为普通光纤的10^9，为光子晶体光纤的10^7，而且有4种光-光互作用，即交叉增益调制（XGM）、交叉相位调制（XPM）、交叉偏振调制（XSM）及四波混频（FWM），可以灵活地组成各种光信号处理器件，如波长变换器、全光触发器、全光逻辑、全光时钟恢复、全光缓存器……等，正成为整个光信号处理的基础。文章介绍了它们的原理和简单应用。     

半导体光放大器的光-光互作用及其应用

半导体光放大器(SOA)中的非线性系数约为普通光纤的109,为光子晶体光纤的107,而且有4种光-光互作用,即交叉增益调制（XGM）、交叉相位调制(XPM)、交叉偏振调制（XSM）及四波混频（FWM）,可以灵活地组成各种光信号处理器件,如波长变换器、全光触发器、全光逻辑、全光时钟恢复、全光缓存器……等,正成为整个光信号处理的基础。文章介绍了它们的原理和简单应用