Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.     

Optimal growth conditions for GdBa2Cu3O7 thin-film coated conductors characterized by polarized Raman scattering spectroscopy

High temperature superconducting GdBa₂Cu₃O₇ (GdBCO) thin films were grown by pulsed laser ablation. Textured MgO on metal substrates was used as a template for second generation wire applications. Growth conditions of GdBCO thin films were investigated for substrate temperature (T_s) and oxygen partial pressure (PO₂) during deposition. Superconducting critical currents of the films were obtained in the films grown at 790–810 °C of T_s and at 100–700 mTorr of PO₂. Scanning electron micrographs of the films revealed uniform and well-connected grains with some outgrown structures. X-ray θ–2θ scans of the films grown at 810 °C and 300–500 mTorr exhibited c-axis oriented texture. In-plane alignment and c-axis mosaic spread of the films were determined from X-ray Φ scans and rocking curves, respectively. Polarized Raman scattering spectroscopy was used to characterize optical phonon modes, oxygen content, cation disorder, and some possible second phases of the films. The Raman spectra of the films with large critical current density showed modes at 326–329 cm⁻¹, 444–447 cm⁻¹, 500–503 cm⁻¹ related to vibration of oxygen atoms. Origin of small peaks near 600 cm⁻¹ will be discussed as well. The information obtained from Raman scattering measurements will be useful for quality control of the conductors as well as optimization of the process conditions.     

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

Multilayered Ge nanocrystals embedded in SiO_xGeN_y films have been fabricated on Si substrate by a (Ge + SiO₂)/SiO_xGeN_y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO₂ composite target and subsequent thermal annealing in N₂ ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO₂) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the ‘Z’ growth direction.     

Conversion of covalent to ionic character of V2O5–CeO2–PbO–B2O3 glasses for solid state ionic devices

xV₂O₅–xCeO₂–(30−x)PbO–(70−x) B₂O₃ glasses are synthesized by using the melt quench technique. The number of studies such as XRD, density, molar volume, optical band gap, refractive index and FTIR spectroscopy are employed to characterize the glasses. The band gap decreases from 2.20 to 1.78 eV and density increases from 3.49 to 4.25 g/cm³. FTIR spectroscopy reveals that incorporation of V₂O₅ in glass network helps to convert the structural units of [BO₃] into [BO₄]. At higher concentration of vanadium, VO vibration of [VO₅] structural units and V–O–V vibration are present. The bond ionicity of glasses increases with incorporation of V₂O₅ contents.     

Electronic energy levels of lithium gadolinium tetraphosphate (LiGdP4O12)

The positions of 15 electronic energy levels above the ground level ⁸S_7/2 of Gd³⁺ in flux-grown single crystals of LiGdP₄O₁₂ have been determined from 4f–4f transitions observed in absorption spectra in the range 190–340 nm at T = 293 K. The experimental energy levels have been compared with theoretical ones obtained by two parameters, F₂ = 392 cm⁻¹ and ζ_4f = 1525 cm⁻¹, in the intermediate coupling approximation.     

Intralamellar structural modifications related to the proton exchanging in K4Nb6O17 layered phase

Basic structural aspects about the layered hexaniobate of K₄Nb₆O₁₇ composition and its proton-exchanged form were investigated mainly by spectroscopic techniques. Raman spectra of hydrous K₄Nb₆O₁₇ and H₂K₂Nb₆O₁₇·H₂O show significant modifications in the 950-800 cm⁻¹ region (Nb-O stretching mode of highly distorted NbO₆ octahedra). The band at 900 cm⁻¹ shifts to 940 cm⁻¹ after the replacement of K⁺ ion by proton. Raman spectra of the original materials and the related deuterated samples are similar suggesting that no isotopic effect occurs. Major modifications were observed when H₂K₂Nb₆O₁₇ was dehydrated: the relative intensity of the band at 940 cm⁻¹ decreases and new bands seems to be present at about 860-890 cm⁻¹. The H⁺ ions should be shielded by the hydration sphere what preclude the interaction with the layers. Removing the water molecules, H⁺ ions can establish a strong interaction with oxygen atoms, decreasing the bond order of Nb-O linkage. X-ray absorption near edge structure studies performed at Nb K-edge indicate that the niobium coordination number and oxidation state remain identical after the replacement of potassium by proton. From the refinement of the fine structure, it appears that the Nb-Nb coordination shell is divided into two main contributions of about 0.33 and 0.39 nm, and interestingly the population, i.e., the number of backscattering atoms is inversed between the two hexaniobate materials.     

Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact

We oxidized a Ni/Au metal bi-layer contact fabricated on HVPE Al_0.18Ga_0.82N from 373 K to 573 K in 100 K steps. In the range 1 kHz to 2 MHz, the Capacitance–Voltage–Frequency (C–V–f) measurements reveal a frequency dispersion of the capacitance and the presence of an anomalous peak at 0.4 V owing to the presence of interface states in the as deposited contact system. The dispersion was progressively removed by O₂ anneals from temperatures as low as 373 K. These changes are accompanied by an improvement in the overall quality of the Schottky system: the ideality factor, n, improves from 2.09 to 1.26; the Schottky barrier height (SBH), determined by the Norde [1] method, increases from 0.72 eV to 1.54 eV. From the Nicollian and Goetzberger model [2], we calculated the energy distribution of the density of interface states, N_SS. Around 1 eV above the Al_0.18Ga_0.82N valence band, N_SS, decreases from 2.3×10¹² eV⁻¹ cm⁻² for the un-annealed diodes to 1.3×10¹² eV⁻¹ cm⁻² after the 573 K anneal. Our results suggest the formation of an insulating NiO leading to a MIS structure for the oxidized Au/Ni/Al_0.18Ga_0.82N contact.     

Air-broadening coefficients of the HO2 radical in the 2ν1 band measured using cw-CRDS

In this paper we present measurements of the air-broadening coefficients of HO₂ at room temperature in the 2ν₁ band around 1.5 microns. The HO₂ radicals were created by flash photolysis of SOCl₂ in a flow of O₂/CH₃OH mixtures. To observe air-broadening, N₂ (79%) and O₂ (21%) were added using calibrated flow controllers and a total pressure controller. The total pressure was monitored in parallel using a capacitive pressure gauge. Air-broadening coefficients at 296 K were determined for 34 absorption lines between 6631 and 6671 cm⁻¹. The air-broadening coefficients of HO₂ show a rotational dependence (decreasing from about 0.14 cm⁻¹/atm for N″ = 3 to about 0.09 cm⁻¹/atm for N″ = 10). No evidence for collisional narrowing was observed.     

Microwave assisted combustion synthesis of CdFe2O4: Magnetic and electrical properties

CdFe₂O₄ particles were synthesized by the microwave assisted combustion method using two different fuels—glycine and urea. Microwave heating provides higher chemical yield within a minute. The synthesized particles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM), ac impedance spectroscopy, vibrating sample magnetometry (VSM) and electron spin resonance (ESR) methods. XRD analysis shows the cubic structure of CdFe₂O₄. The high and low frequency absorption bands of CdFe₂O₄ were found using FTIR analysis. Spherical morphology was revealed from the SEM images. ESR and VSM measurements reveal the antiferromagnetic behavior of CdFe₂O₄. The electrical conductivities of CdFe₂O₄ synthesized using glycine and urea are 6.5×10⁻⁷ S cm⁻¹ and 4.7×10⁻⁸ S cm⁻¹ respectively at 240 ^oC. At elevated temperatures an occurrence of increase in conductivity was observed, which indicates the semiconducting behavior of CdFe₂O₄. The dielectric spectral analysis reveals that dielectric constant of CdFe₂O₄ decreases with frequency and increases with temperature.     

Electrical properties vs. microstructure of nanocrystallized V2O5-P2O5 glasses — An extended temperature range study

An electronically conducting nanomaterial was synthesized by nanocrystallization of a 90V₂O₅·10P₂O₅ glass and its electrical properties were studied in an extended temperature range from − 170 to + 400 °C. The conductivity of the prepared nanomaterial reaches 2 ? 10^− 1 S cm^− 1 at 400 °C and 2 ? 10^− 3 S cm^− 1 at room temperature. It is higher than that of the original glass by a factor of 25 at room temperature and more than 100 below − 80 °C. A key role in the conductivity enhancement was ascribed to the material's microstructure, and in particular to the presence of the large number of small (ca. 20 nm) grains of crystalline V₂O₅. The observed conductivity dependencies are discussed in terms of the Mott's theory of the electronic hopping transport in disordered systems. Since V₂O₅ is known for its ability to intercalate lithium, the presented results might be helpful in the development of cathode materials for Li-ion batteries.     

Room-temperature broadening and pressure-shift coefficients in the ν2 band of CH3D-O2: Measurements and semi-classical calculations

We report measured Lorentz O₂-broadening and O₂-induced pressure-shift coefficients of CH₃D in the ν₂ fundamental band. Using a multispectrum fitting technique we have analyzed 11 laboratory absorption spectra recorded at 0.011 cm⁻¹ resolution using the McMath-Pierce Fourier transform spectrometer, Kitt Peak, Arizona. Two absorption cells with path lengths of 10.2 and 25 cm were used to record the spectra. The total sample pressures ranged from 0.98 to 339.85 Torr with CH₃D volume mixing ratios of 0.012 in oxygen. We report measurements for O₂ pressure-broadening coefficients of 320 ν₂ transitions with quantum numbers as high as J″ = 17 and K = 14, where K″ = K′ ≡ K (for a parallel band). The measured O₂-broadening coefficients range from 0.0153 to 0.0645 cm⁻¹ atm⁻¹ at 296 K. All the measured pressure-shifts are negative. The reported O₂-induced pressure-shift coefficients vary from about −0.0017 to −0.0068 cm⁻¹ atm⁻¹. We have examined the dependence of the measured broadening and shift parameters on the J″, and K quantum numbers and also developed empirical expressions to describe the broadening coefficients in terms of m (m = −J″, J″, and J″ + 1 in the ^QP-, ^QQ-, and ^QR-branch, respectively) and K. On average, the empirical expressions reproduce the measured broadening coefficients to within 4.4%. The O₂-broadening and pressure shift coefficients were calculated on the basis of a semiclassical model of interacting linear molecules performed by considering in addition to the electrostatic contributions the atom-atom Lennard-Jones potential. The theoretical results of the broadening coefficients are generally larger than the experimental data. Using for the trajectory model an isotropic Lennard-Jones potential derived from molecular parameters instead of the spherical average of the atom-atom model, a better agreement is obtained with these data, especially for |m| ? 12 values (11.3% for the first calculation and 8.1% for the second calculation). The O₂-pressure shifts whose vibrational contribution are either derived from parameters fitted in the ^QQ-branch of self-induced shifts of CH₃D or those obtained from pressure shifts induced by Xe in the ν₃ band of CH₃D are in reasonable agreement with the scattered experimental data (17.0% for the first calculation and 18.7% for the second calculation).     

Synthesis and magnetic characterization of cobalt-substituted ferrite (CoxFe3−xO4) nanoparticles

Cobalt-substituted ferrite nanoparticles were synthesized with a narrow size distribution using reverse micelles formed in the system water/AOT/isooctane. Fe:Co ratios of 3:1, 4:1, and 5:1 were used in the synthesis, obtaining cobalt-substituted ferrites (Co_xFe_3−xO₄) and some indication of γ-Fe₃O₄ when 4:1 and 5:1 Fe:Co ratios were used. Inductively coupled plasma mass spectroscopy (ICP-MS) verified the presence of cobalt in all samples. Fourier transform infrared (FTIR) showed bands at ∼560 and ∼400 cm⁻¹, characteristic of the metal–oxygen bond in ferrites. Transmission electron microscopy showed that the number median diameter of the particles was ∼3 nm with a geometric deviation of ∼0.2. X-ray diffraction (XRD) confirmed the inverse spinel structure typical of ferrites with a lattice parameter of a=8.388 Å for Co_0.61Fe_0.39O₄, which is near that of CoFe₂O₄ (a=8.394 Å). Magnetic properties were determined using a superconducting quantum interference device (SQUID). Coercivities higher than 8 kOe were observed at 5 K, whereas at 300 K the particles showed superparamagnetic behavior. The anisotropy constant was determined based on the Debye model for a magnetic dipole in an oscillating field and an expression relating χ′ and the temperature of the in-phase susceptibility peak. Anisotropy constant values in the order of ∼10⁶ erg/cm³ were determined using the Debye model, whereas anisotropy constants in the order of ∼10⁷ erg/cm³ were calculated assuming Ωτ=1 at the temperature peak of the in-phase component of the susceptibility curve as commonly done in the literature. Our analysis demonstrates that the assumption Ωτ=1 at the temperature peak of χ′ is rigorously incorrect.     

Heat capacity and magnetic properties of pyrochlore Hg2Os2O7

Hg₂Os₂O₇, which has the cubic pyrochlore structure, remains metallic down to the liquid helium temperature unlike its isostructural counterpart Cd₂Os₂O₇, which shows metal-insulator transition at 226 K. Magnetization and heat capacity data for Hg₂Os₂O₇ are presented. The magnetic anomaly at T_N=88 K shares many characteristics in common with the metal-insulator transition in Cd₂Os₂O₇, though Hg₂Os₂O₇ remains metallic below T_N. The heat capacity C_p shows no or very little change in the magnetic entropy around T_N, supporting the view that there is no long-range ordering of localized spins. The measured value of electronic heat-capacity coefficient γ=21 mJ K⁻²mol⁻¹ is comparable to the value obtained from band-structure calculation on Cd₂Os₂O₇, suggesting that mass-enhancement is small in Hg₂Os₂O₇. There is a pronounced peak in C_p/T³ at 13.1 K, which corresponds to a peak in the phonon density of states at 40 cm⁻¹.     

Synthesis and photoluminescence properties of aqueous CdWO4 quantum dots with WO6 luminescence center

Aqueous CdWO₄ QDs were synthesized by the reaction of CdCl₂ and Na₂WO₄ in the presence of mercaptoacetic acid (TGA) as capping reagent. The crystal morphology, particle size and its distribution of as-prepared products were characterized by transmission electron microscopy (TEM, SAED) atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and photon correlation spectroscopy (PCS), respectively. Qualitative assays for functional groups on the QDs’ surface were measured by fourier transform infrared spectroscopy (FTIR). Photoluminescence properties of QDs were studied by photoluminescence spectroscopy (PL). The results showed that the single QD with diameter of about 8 ± 2 nm was single-crystal. The particle size distribution of QDs was normal. Infrared absorption bands of carboxylic group on the surface of CdWO₄ QDs were observed around 1610-1550 cm⁻¹ (nonsymmetrical vibration of -COO⁻) and 1400 cm⁻¹ (symmetric vibration of C-O). With reaction-time going, PL peak position shifted from 498 to 549 nm and intensity of PL increased first and then decreased. PL peak position of QDs was blue-shift compared with 570 nm WO₆⁶⁻ luminescence center of bulk CdWO₄.     

Carrier decay process of nanoscaled SiGe particles embedded in SiO2 matrix

Nanoscaled SiGe particles (NPs) are formed by ions implantation and annealing treatment methods. For any sample, the total dose of Si and Ge dopants is 3×10¹⁶ cm⁻². Strong photoluminescence (PL) peaks centered around red emission region are observed. This PL peak red shifts from 653 nm–695 nm with the increase of Ge-doping dose, which is ascribed to the quantum confinement effect. The PL lifetime spectra exhibit a stretched exponential decay with characteristic decay time τ varying from 50.2–23.1 μs and dispersion factor β in the range of 0.67–0.86.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².     

Effect of Nd concentration on structural and optical properties of Nd:Y2O3 transparent ceramic

Y₂O₃ transparent ceramics with different Nd concentration (0.1-7.0at%) were fabricated using ZrO₂ as additive. All the samples exhibit high transparency over a broad spectral region. The elements (Y, O and Nd) are uniformly distributed in the ceramic body, and the average grain size increases with Nd content. Based on the absorption spectrum, the Judd-Ofelt intensity parameters are calculated (Ω₂=4.364×10⁻²⁰ cm², Ω₄=3.609×10⁻²⁰ cm² and Ω₆=2.919×10⁻²⁰ cm²). The absorption coefficients increase linearly with Nd³⁺ doping concentration. The absorption cross-section at 804 nm and stimulated emission cross-section at 1078 nm are calculated to be 1.54×10⁻²⁰ and 7.24×10⁻²⁰ cm², respectively. All the emission bands exhibit the highest emission intensities with 1.0at% Nd³⁺ ion content, while the lifetime decreases dramatically from 321.5 μs (0.1at% Nd) to 17.9 μs (7.0at% Nd). According to the emission spectra and measured lifetime, the optimum doping concentration of Nd³⁺ ion in Y₂O₃ transparent ceramic might be around 1.0at%.     

Growth and vibrational properties of ultra-thin Cr2O3 films grown on Cr(110) studied by RAIRS

Ultra-thin films of Cr₂O₃(0 0 0 1) grown on Cr(1 1 0) were investigated by reflection absorption infrared spectroscopy (RAIRS). An absorption band at 720 cm⁻¹ is assigned to a longitudinal optical phonon of Cr₂O₃. With increasing O₂ exposure, this absorption band shifts to higher frequency, which is qualitatively explained by a simple spring model. After successive oxidation with ¹⁸O₂ and ¹⁶O₂, two absorption bands corresponding to and were distinctly observed suggesting that oxygen diffusion hardly occurs during the oxide growth. Temperature dependence of the RAIRS spectrum taken from the Cr₂O₃ film revealed that the absorption band position shifts to lower frequency along with broadening of the band width. Anharmonic coupling with low-frequency phonons and effects of the antiferromagnetic to paramagnetic phase transition are discussed.     

Spectral properties of Nd:Ca2Nb2O7 crystal

This paper reports the spectral properties of Nd³⁺:Ca₂Nb₂O₇. The spectral parameters of Nd³⁺ in Nd³⁺:Ca₂Nb₂O₇ crystal have been investigated based on Judd-Ofelt theory. The spectral parameters were obtained. The parameters of line strengths Ω_λ are Ω₂=4.967×10⁻²⁰ cm², Ω₄=5.431×10⁻²⁰ cm², Ω₆=5.693×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 122 μs, 103 μs and 84.4%, respectively. The fluorescence branch ratios calculated: β₁=0.425, β₂=0.479, β₃=0.091, β₄=0.004. The emission cross section at 1068 nm is 6.204×10⁻²⁰ cm².     

Electrical and electrochemical properties of glass-ceramic electrolytes in the systems Li2S-P2S5-P2S3 and Li2S-P2S5-P2O5

Electrical and electrochemical properties of the 70Li₂S·(30 − x)P₂S₅·xP₂S₃ and the 70Li₂S·(30 − x)P₂S₅·xP₂O₅ (mol%) glass-ceramics prepared by the mechanical milling technique were investigated. Glass-ceramics with 1 mol% P₂S₃ and 3 mol% P₂O₅ showed the highest conductivity of 5.4 × 10^− 3 S cm^− 1 and 4.6 × 10^− 3 S cm^− 1, respectively. Moreover, these glass-ceramics showed higher electrochemical stability than the 70Li₂S·30P₂S₅ (mol%) glass-ceramic. From the XRD patterns of the obtained glass-ceramics, trivalent phosphorus and oxygen were incorporated into the Li₇P₃S₁₁ crystal. We therefore presume that the Li₇P₃S₁₁ analogous crystals, which were formed by incorporating trivalent phosphorus and oxygen into the Li₇P₃S₁₁ crystal, improve the electrical and electrochemical properties of the glass-ceramics. An all-solid-state cell using the 70Li₂S·29P₂S₅·1P₂S₃ (mol%) glass-ceramic as solid electrolyte operated under the high current density of 12.7 mA cm^− 2 at the high temperature of 100 °C. The cell showed an excellent cyclability of over 700 cycles without capacity loss.