Size dependence of surface optical mode and electron–phonon coupling in ZnO nanocombs

ZnO nanocombs with different sizes are synthesized by simple thermal evaporation methods. Scanning electron microscopy and transmission election microscopy testify the growth of single crystal ZnO nanocombs along [0 0 0 2] direction. The temperature-dependent Raman spectra show that the intensity of surface optical (SO) modes in ZnO nanocombs obviously increases with declining measure temperatures. With the decrease of diameters, the frequency of SO modes shows a blue shift due to the passivation of surface states. The resonant Raman scattering shows that the strength of electron–phonon coupling increases with decreasing size. Calculated on size-dependent electron–phonon interaction energy agrees well with measured values for a large size range. The origin of electron–phonon coupling in ZnO nanocombs is also discussed.     

Impact of anisotropy on polar optical vibration in a wurtzite cylindrical nanowire with ring geometry

The quasi-confined (QC) phonon modes, surface optical (SO) phonon modes and corresponding Fröhlich-like Hamiltonian in a wurtzite cylindrical nanowire with ring geometry are investigated in the framework of the dielectric continuum model and Loudon’s uniaxial crystal model. Numerical calculations are focused on the dispersion relations of the SO phonons and the electron–SO phonon coupling strength. Results show that there are only two branches of SO phonon modes. The dispersions of the two branches of SO phonon modes are obvious when the phonon wave-number k_z or the azimuthal quantum number m is small. Typical degenerating behavior of the SO modes is evidenced due to the anisotropic effect of wurtzite crystal. Moreover, when k_z or m are large enough, the frequencies of the two branches of SO modes converge to a definite limiting frequency in single planar heterostructure. The calculations of the electron–SO phonon coupling strength reveal that the high-frequency SO modes (SO₊) play a more important role in the coupling strength than the low-frequency ones (SO₋). Furthermore, the long-wavelength SO phonons with small m are the main factor contributing to the electron–phonon interaction.     

Interpretation of temperature dependence of the in-plane electrical resistivity in YBa2Cu4O8: Electron–phonon approach

In this paper, we undertake a quantitative analysis of observed temperature-dependent in-plane normal state electrical resistivity of single crystal YBa₂Cu₄O₈. The analysis is within the framework of classical electron–phonon i.e., Bloch-Gruneisen model of resistivity. It is based on the inherent acoustic (low frequency) phonons (ω_ac) as well as high frequency optical phonons (ω_op), the contributions to the phonon resistivity were first estimated. The optical phonons of the oxygen breathing mode yields a relatively larger contribution to the resistivity compared to the contribution of acoustic phonons. Estimated contribution to in-plane electrical resistivity by considering both phonons i.e., ω_ac and ω_op, along with the zero-limited resistivity, when subtracted from single crystal data infers a quadratic temperature dependence over most of the temperature range [80 ? T ? 300]. Quadratic temperature dependence of ρ_diff. = [ρ_exp − {ρ₀ + ρ_e−ph (=ρ_ac + ρ_op)}] is understood in terms of electron–electron inelastic scattering. The relevant energy gap expressions within the Nambu-Eliashberg approach are solved imposing experimental constraints on their solution (critical temperature T_c). It is found that the indirect-exchange formalism provides a unique set of electronic parameters [electron–phonon (λ_ph), electron-charge fluctuations (λ_pl), electron–electron (μ) and Coulomb screening parameter (μ^*)] which, in particular, reproduce the reported value of T_c.     

Determination of the electron–phonon coupling parameters from the thermal shifts of R-lines for Cr-doped garnets

The thermal shifts of R₁ and R₂ lines of Cr³⁺-doped garnets Y₃Ga₅O₁₂ (YGG), Y₃Sc₂Al₃O₁₂ (YSAG) and Gd₃Sc₂Al₃O₁₂ (GSAG) are studied by considering both the static contribution (which is frequently neglected in the previous papers) due to lattice thermal expansion and the vibrational contribution due to electron–phonon interaction. In the studies, the static contribution is calculated with the thermal expansion coefficient of the corresponding cluster in the host garnet crystals. The results indicate that the static contributions in sign are opposite to and in magnitude are about 10% of the corresponding vibrational contributions. The true electron–phonon coupling parameters α′ obtaining by taking both contributions into account increase more than 10% in comparison with the corresponding apparent electron–phonon coupling parameters α determined by considering only the vibrational contribution in the previous paper. So, to obtain the complete understanding of thermal shift of a spectral line and the true rather than apparent electron–phonon coupling parameters, one should take account of both the static and vibrational contributions.     

Study on the structure and optical property of Zn1−xCuxO sol–gel thin films on quartz substrate

Zn_1−xCu_xO thin films (x=0, 1.0, 3.0, 5.0%) are prepared on quartz substrate by sol–gel method. The structure and morphology of the samples are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results show that Cu ions were effectively penetrated into the ZnO crystal lattices with substitutional and interstitial impurities to form stable solid solutions without changing the polycrystalline wurtzite structure. Two peaks at 420 nm (2.95 eV, violet), 485 nm (2.56 eV, blue) have been observed from the photoluminescence (PL) spectra of the samples. It is concluded that the violet peak may correspond to the exciton emission; the blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy. The optical test shows that the optical band gap E_g is decreased with the increase amount of Cu doping in ZnO. The band gap decrease from 3.40 eV to 3.25 eV gradually. It is also found that the transmission rate is increased rapidly with the increase of Cu ions concentration.     

Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (Φ_B) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height Φ_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of Φ_B=0.615 eV and standard deviation σ_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm⁻² K⁻² and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm⁻² K⁻². This may be due to greater inhomogeneities at the interface.     

Structural,optical and magnetic study of (1−x)ZnO–xMgO composites prepared through solid state reaction method

We report the study of structural, optical and magnetic properties of (1−x)ZnO–xMgO (x=0.35, 0.40, 0.45 and 0.50) composites prepared by solid state reaction method. X-ray diffraction pattern confirms the presence of both the phases associated with ZnO (hexagonal) and MgO (cubic), which is revealed through the existence of (1 1 1) and (2 0 0) peaks in addition to ZnO peaks. The lattice parameter c as calculated using X-ray analysis undergoes shrinkage with increasing content of MgO. Microstructural analysis suggests that there is no variation in spherical elongated shape of grains with increasing concentration of MgO, where the average grain size is found to be ∼600 nm. The band gap as calculated from optical absorption spectra obtained by diffuse reflectance method recorded at room temperature is tuned from 3.16 to 3.55 eV. Photoluminescence spectra consist of near band edge UV emission (389 nm) and defect level emission (503 nm). The increase of MgO concentration leads to blue shift of UV emission peaks. The magnetic measurements conducted using SQUID at 5 K temperature reveals ferromagnetism along with paramagnetic and superparamagnetic components. Saturation magnetisation (M_s) is observed to be enhanced with MgO doping.     

Annealing mechanisms of self-interstitial related defect E1=Ec−0.39 eV in irradiated silicon

DLTS and thermally stimulated capacitance (TSCap) studies of α-particle irradiated p-Si were undertaken to obtain additional information about the self-interstitial related defect E1=E_c−0.39 eV. The E1 defect can be retained frozen up to room temperature without any minority carrier injection, but under injection conditions at 77–300 K the E1 becomes mobile. As a result of annealing of the E1 defect, the carbon interstitial concentration grows. The E1 defect production rate under reverse bias as well as thermal annealing behavior depends strongly on the temperature and impurity concentration. Numerical estimates of the E1 migration via a Bourgoin–Corbett mechanism are in good agreement with the experimental data obtained.     

Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 °C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1×10¹¹ ions/cm² and 1×10¹² ions/cm² for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron–phonon coupling.     

Studies of luminescence properties of ZnO and ZnO:Zn nanorods prepared by solution growth technique

Pyramidal ZnO nanorods with hexagonal structure having c-axis preferred orientation are grown over large area silica substrates by a simple aqueous solution growth technique. The as-grown nanorods were studied using XRD, SEM and UV-vis photoluminescence (PL) spectroscopy for their structural, morphological and optical properties, respectively. Further, the samples have also been annealed under different atmospheric conditions (air, O₂, N₂ and Zn) to study the defect formation in nanorods. The PL spectra of the as-grown nanorods show narrow-band excitonic emission at 3.03 eV and a broad-band deep-level emission (DLE) related to the defect centers at 2.24 eV. After some mild air annealing at 200 °C, fine structures with peaks having energy separation of ∼100 meV were observed in the DLE band and the same have been attributed to the longitudinal optical (LO) phonon-assisted transitions. However, the annealing of the samples under mild reducing atmospheres of N₂ or zinc at 550 °C resulted in significant modifications in the DLE band wherein high intensity green emission with two closely spaced peaks with maxima at 2.5 and 2.7 eV were observed which have been attributed to the V_O and Zn_i defect centers, respectively. The V-I characteristic of the ZnO:Zn nanorods shows enhancement in n-type conductivity compared to other samples. The studies thus suggest that the green emitting ZnO:Zn nanorods can be used as low voltage field emission display (FED) phosphors with nanometer scale resolution.     

dc-Hydrogen plasma induced defects in bulk n-Ge

Bulk antimony doped germanium (n-Ge) has been exposed to a dc–hydrogen plasma. Capacitance–voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ∼a 1.5 orders of magnitude reduction in the free carrier concentration up to depth of ∼3.2 μm. DLTS and Laplace-DLTS revealed a prominent electron trap 0.30 eV below the conduction (E_C –0.30 eV). The concentration of this trap increased with plasma exposure time. The depth profile for this defect suggested a uniform distribution up to 1.2 μm. Annealing studies show that this trap, attributed to a hydrogen-related complex, is stable up to 200 °C. Hole traps, or vacancy-antimony centers, common in this material after high energy particle irradiation, were not observed after plasma exposure, an indication that this process does not create Frenkel (V–I) pairs.     

Phonon coupling effect upon transport in nanoscale polymers

In an environmental coupled polymer, a variation of the conductivity is evaluated, which results from the external electron–phonon interaction coupling with the internal one. A quantized current appears under the external phonon coupling. The resonant tunnelling in the nanoscale polymer driven by the internal electron–phonon interaction is enhanced by the external phonon coupling. In addition, the external electron–phonon interaction softens the stiffness of the polymer.     

Magneto-resistance above 300 K in nano-crystalline Co–Ag metastable solid solutions

A series of nano-crystalline Co_xAg_100−x solid solutions have been prepared by NaBH₄ reduction of the corresponding metal salts at room temperature in Ar gas flow. Alloys heat-treated at 600 °C in Ar/H₂ (5%) show the evolution of metastable fcc Co precipitates in Ag. Magnetic studies indicate that all the compositions are ferromagnetic with Curie temperatures >400 K. For a nominal composition of Co₆₀Ag₄₀, heat-treated at 600 °C, an effective negative magneto-resistance (MR) ratio of the order of ∼21% at 350 K, at 2 T is observed. This could arise from the influence of magnetic field on the electron–phonon scattering effects near to T_c and to the spin-mixing scattering by magnons.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films

We study the electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ film grown by pulsed laser deposition through Hall effect and cathodoluminescence which consist of ultraviolet luminescence (UV), blue luminescence (BL) and green luminescence (GL) bands. The Hall effect measurements indicate that the carrier concentration increases from 7.16×10¹¹ to 6.35×10¹² cm⁻³ with increasing a nominal Zn content from 3 to 7 at%. The UV band at 272 nm is not attributed to Zn dopants and ascribed as radiative electron transition from conduction band to a self-trapped hole while the BL band is attributable to defect level related to Zn dopant. The BL band has two emission peaks at 415 and 455 nm, which are ascribed to the radiative electron transition from oxygen vacancy (V_O) to valence band and recombination of a donor–acceptor pair (DAP) between V_O donor and Zn on Ga site (Zn_Ga) acceptor, respectively. The GL band is attributed to the phonon replicas’ emission of the DAP. The acceptor level of Zn_Ga is estimated to be 0.26 eV above the valence band maximum. The transmittance and absorption spectra prove that the Zn-doped β-Ga₂O₃ film is a dominantly direct bandgap material. The results of Hall and cathodoluminescence measurements imply that the Zn dopant in β-Ga₂O₃ film will form an acceptor Zn_Ga to produce p-type conductivity.     

Experimental observation of a practical limit on enhancement of the spontaneous emission rate in blue GaN-LEDs by mediating surface plasmons

High modulation speed of light-emitting diodes (LEDs) is of primary importance for applications in optical communication. To this end, we experimentally investigated enhancement behaviors of the spontaneous emission rate (SER) of electron–hole pairs in blue InGaN/GaN LEDs by mediating surface plasmons (SPs). The coupling strength of the electron–hole recombination into SPs is controlled by etching the p-GaN layer between the active and metal layers to form thicknesses between 40 nm and 10 nm. While a tendency of increasing SER is theoretically expected for a smaller separation, the maximum value SER enhancement has a practical limit of about 2.5 at λ = 441 nm, and separation of 20 nm due to damage on the p-GaN layer caused by the etching process.     

Surface morphology and electronic structure of halogen etched InAs (1 1 1)

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H₂O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.     

Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Low energy (±80 eV) Ar plasma etching has been successfully used to etch several semiconductors, including GaAs, GaP, and InP. We have studied the only prominent defect, E_0.31, introduced in n-type Sb-doped Ge during this process by deep level transient spectroscopy (DLTS). The E_0.31 defect has an energy level at 0.31 eV below the conduction band and an apparent capture cross-section of 1.4×10⁻¹⁴ cm². The fact that no V-Sb defects and no interstitial-related defects were observed implies that the etch process did not introduce single vacancies or single interstitials. Instead it appears that higher order vacancy or interstitial clusters are introduced due to the large amount of energy deposited per unit length along the path of the Ar ions in the Ge. The E_0.31 defect may therefore be related to one of these defects. DLTS depth profiling revealed the E_0.31 concentration had a maximum (6×10¹³ cm⁻³) close to the Ge surface and then it decreased more or less exponentially into the Ge. Finally, annealing at 250 °C reduced the E_0.31 concentration to below the DLTS detection limit.     

Superconductivity and normal state resistivity of Ba0.6K0.4BiO3: an optical phonon approach

We discuss the nature of the pairing mechanism and the physical properties associated with the normal as well as the superconducting state of cubic perovskites Ba_0.6K_0.4BiO₃using the strong coupling theory. An interaction potential which includes the Coulomb, electron–optical phonon and electron–plasmon interactions is developed to elucidate the superconducting state. A model dielectric function is constructed with these interactions fulfilling thef-sum rule. The screening parameter (μ^* = 0.26) infers the poor screening of charge carriers. The electron–optical phonon strength (λ) estimated as 0.98 is consistent with an attractive electron–electron interaction and supports the moderate to strong coupling theory. The superconducting transition temperature of Ba_0.6K_0.4BiO₃is then estimated as 32 K. Ziman's formula of resistivity is employed to analyse and compare this with the temperature-dependent resistivity of a single crystal. The estimated contribution from the electron–optical phonon together with the residual resistivity clearly infers a difference when a comparison is made with experimental data. The subtracted data infer a quadratic temperature dependence in the temperature domain (30 ≤ T ≤ 200 K). The quadratic temperature dependence of ρ [ = ρ_exp − (ρ₀ + ρ_e–ph)] is understood in terms of 3D electron–electron inelastic scattering. The presence of these el–el and el–ph interactions allows a coherent interpretation of the physical properties. Analysis reveals that a moderate to strong coupling exists in the Ba_0.6K_0.4BiO₃system and the coupling of electrons with the high-energy optical phonons of the oxygen breathing mode will be a reason for superconductivity. The implications of the above analysis are discussed.     

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60-300 K. The room temperature values for the zero bias barrier height from the I-V measurements (Φ_I-V) was found to be 0.52 eV and from the C-V measurements (Φ_C-V) as 3.83 eV. From the temperature dependence of forward bias I-V, the barrier height was observed to increase with temperature, a trend that disagrees with the negative temperature coefficient for semiconductor material. The C-V barrier height decreases with temperature, a trend that is in agreement with the negative temperature coefficient of semiconductor material. This has enabled us to fit two curves in two regions (60-120 K and 140-300 K). We have attributed this behaviour to a defect observed by DLTS with energy level 0.31 eV below the conduction band and defect concentration of between 4×10¹⁶ and 6×10¹⁶ cm⁻³ that traps carriers, influencing the determination of the barrier height.