Enhancement of optical gain in Li:CdZnO/ZnMgO quantum well lasers

The CdZnO/ZnMgO QW structure with high Cd composition is found to have smaller optical gain because the strain-induced piezoelectric polarization and the spontaneous polarization in the well increase with the inclusion of Cd. The internal field is reduced due to the additional polarization of opposite direction by Li in the CdZnO/ZnMgO QW structure. These results show that Li:CdZnO-based QW lasers are promising candidates for optoelectric applications in visible and UV regions.     

Properties of laser gain of Li:CdZnO/ZnMgO quantum well

The many-body optical gain in Li:CdZnO/MgZnO quantum well (QW) structures with spontaneous polarization and piezoelectric polarization, and ferroelectric dipole moment is investigated by using the non-Markovian gain model with many-body effects. The CdZnO/MgZnO QW structure with high Cd composition is found to have smaller optical gain because the strain-induced piezoelectric polarization and the spontaneous polarization in the well increase with the inclusion of Cd. The internal field is reduced due to the additional polarization by Li in the CdZnO/MgZnO QW structure. These results show that Li:CdZnO-based QW lasers are promising candidates for optoelectric applications in visible and UV regions.     

Optical properties of AlxGa1−xAs/GaAs Woods–Saxon quantum well in the presence of hydrostatic pressure and applied electric field

The third harmonic generation (THG), linear and nonlinear optical absorption coefficients (OACs), and refractive index changes (RICs) are investigated in a Woods–Saxon quantum well (QW) modulated by the hydrostatic pressure and applied electric field. The effect of non-uniform aluminum doping (position-dependent effective mass (PDEM)) on the mass of the system is discussed, and further to explore the influence of PDEM on the nonlinear THG, OACs, and RICs of the Woods–Saxon QW. These nonlinear optical properties above are obtained using the compact-density matrix formalism. The electron states in a Woods–Saxon QW under the constant effective mass (CEM) and PDEM are calculated by solving the Schrödinger equation via the finite difference technique. The contributions from competing effects of the hydrostatic pressure and applied electric field to the nonlinear optical properties with CEM and PDEM are reported, as well as the comparison with each other. The observations reveal that the regulation of external fields and the influence of PDEM play an important role in the photoelectric properties of QW.     

Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

Based on the effective-mass approximation, the competition effects between the laser field and applied electric field on impurity states have been investigated variationally in the ZB GaN/AlGaN quantum well (QW). Numerical results show that for any laser field, the electric field makes the donor binding energy present asymmetric distribution with respect to the center of the QW. Moreover, when the laser field is weak, the electric field effects are obvious on the donor binding energy; however, the electric field effects are insensitive to the variation of donor binding energy in the ZB GaN/AlGaN QW with strong laser field.     

Anisotropic strain effects on light emission characteristics of CdZnO/ZnO quantum well structures

Anisotropic strain effects by strain relaxation on TE-polarized light emission characteristics of c-plane CdZnO/ZnO quantum well (QW) structures were theoretically investigated by using the multiband effective-mass theory. The CdZnO/ZnO QW structure with anisotropic strain has much larger emission intensity than conventional CdZnO/ZnO QW structure without the strain relaxation. In the case of the strain relaxation along x(or y)-direction, the x(or y)-polarized light emission is observed to be larger than the x(or y)-polarized light emission. In particular, in the case of the strain relaxation along both x- and y-directions, the increase in the spontaneous emission peak is significant. This can be explained by the fact that the internal field is reduced owing to the decrease in the piezoelectric field by the strain relaxation.     

Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field

We present a detailed theoretical study on optical properties of an InAs/GaSb-based type II and broken-gap quantum well (QW) in the presence of gated electric voltage. Two absorption peaks were observed through intraband transitions within the same material layer. The intensity of optical absorption induced by inter-layer transition is relatively weak due to a small overlap of electron and hole wavefunctions at InAs/GaSb interface. The applied electric field can open up new channels for optical transition and thus affect significantly the optical absorption by changing the overlap of the electron and hole wavefunctions as well as the transition channels. The obtained results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors working at mid-infrared bandwidth at relatively high temperatures. More over, the bandwidth of the optical absorption can be tuned by the gated electric field.     

氮化物半导体耦合量子阱中非线性光整流特性:压电效应与自发极化效应

考虑了由于压电与自发极化引起的强内电场效应,基于密度矩阵与久期处理方法,理论考察了纤锌矿氮化物半导体耦合量子阱体系的非线性光整流特性。根据已经成功建立的耦合量子阱的内建电场模型,精确求解了体系的电子本征态。以典型的GaN/InxGa1-xN纤锌矿氮化物耦合量子阱为例进行了数值计算,结果发现共振光整流系数达到了10-6m/V的量级(体系的偶极矩阵元大小超过了2nm),这比同样尺寸的单氮化物量子阱的相应值高一个数量级。而且,计算还发现光整流系数对耦合量子阱的结构与掺杂组分呈现非单调的依赖关系,这一特性被归结为体系的强内建电场与量子尺寸效应对载流子受限特性的强烈竞争。计算结果还表明,通过选择小尺寸阱宽与垒宽的耦合量子阱,适当降低掺杂组分,可在氮化物耦合量子阱中获得较强的光整流效应。     

电场调控双层石墨烯纳米带的电子结构和光学性质

利用基于密度泛函理论的第一性原理方法,研究了外加电场作用下双层AA堆垛的Armchair边缘石墨烯纳米带(BAGNRs)的电子结构和光学性质. BAGNRs具有半导体特性,其带隙随带宽(宽度为4～12个碳原子)的增加而振荡性减小.当施加电场后,BAGNRs的带隙随着电场强度的增加而逐渐减小,带隙越大对电场值的变化越敏感.当电场值为0.5 V/?时,所有BAGNRs的带隙都为零. BAGNRs具有各向异性的光学性质,其介电函数在垂直极化方向为半导体特性,而在平行极化方向为金属特性.在外加电场的作用下,BAGNRs的介电函数、吸收系数、折射系数、反射系数、电子能量损失系数和光电导率,其峰值向低能量区域移动,即产生红移现象.电场增强了能带间的跃迁几率.纳米带宽度对这些光学性质参数具有不同程度的影响.研究结果解释了电场调控BAGNRs光学性质的规律和微观机理.     

基于克尔效应的真空绝缘子表面电场在线测量

克尔效应(Kerr Effect)作为一种电光效应,主要表现为:克尔介质在外加电场作用下,会使得入射到其中的探测光带有外加电场的信息.基于上述原理,设计并搭建了由快脉冲高电压源、YAG激光器、同步控制子系统、被测绝缘子及克尔效应单元、相位差检测子系统构成的真空绝缘子表面电场在线测量实验平台.通过对比性测量,观察到了真空绝缘子沿面带电导致的表面电场畸变现象.并进一步对绝缘子表面电场的畸变进行了时间分辨测量.     

Donor impurity states in direct-gap SiGe quantum well: Applied electric field and quantum size effects

Within the framework of the effective-mass approximation and variational procedure, competition effects between applied electric field and quantum size on donor impurity states in the direct-gap Ge/SiGe quantum well (QW) have been investigated theoretically. Numerical results show that the applied electric field (quantum size) dominates electron and impurity states in direct-gap Ge/SiGe QW with large (small) well width. Moreover, the competition effects also induce that the donor binding energies show obviously different behaviors with respect to electric field in the QW with different well widths. In particular, when the impurity is located at left boundary of the QW, the donor binding energy is insensitive to the variation of well width when well width is large for any electric field case.     

施加电场的半抛物量子阱中的二阶非线性光学极化率

利用量子力学中的紧致密度矩阵方法,研究了施加电场的半抛物量子阱中的二阶非线性光学极化率(光整流系数),得到了此系统的光整流系数的解析表达式.数值计算的结果表明,随着电场强度的增加,光整流系数几乎线性随之增加,而且在同样的电场强度及抛物束缚势频率作用下,半抛物量子阱模型中的光整流系数比抛物量子阱模型中的值大一个数量级,这是由于我们所选模型本身的非对称性以及电场进一步使这种非对称性增强的缘故.     

磁性硅烯超晶格中电场调制的谷极化和自旋极化

研究了基于硅烯的静电势超晶格、铁磁超晶格、反铁磁超晶格中谷极化、自旋极化以及赝自旋极化的输运性质,分析了铁磁交换场、反铁磁交换场以及化学势对输运性质的影响,讨论了电场对谷极化、自旋极化以及赝自旋极化的调控作用.结果表明:当3种超晶格的晶格数达到10以上时,在硅烯超晶格中很容易实现100%的谷极化、自旋极化和赝自旋极化,而且通过调节超晶格上的外加电场可以使极化方向发生翻转,从而在硅烯超晶格中实现外电场对谷自由度、自旋自由度以及赝自旋自由度的操控.     

AlGaN合金中局域态和极化电场的竞争机制

通过MOVPE方法生长了不同Al组分的3块Al_xGa_1-xN样品,利用稳态光谱和时间分辨光谱对其样品的光学特性进行了分析。鉴于影响氮化物发光性质的极化电场或局域态的单一机制不能充分解释我们的实验现象,提出了局域态-内部极化电场竞争的机制。通过对实验数据的分析,得出如下重要结论：样品PL峰位蓝移的温度起点基本对应于局域态和极化电场起作用的交替点,PL峰位发生蓝移的温度起点与光强-温度曲线的斜率出现明显变化的温度点一致;随着温度的升高,若AlGaN合金样品中PL峰位存在二次蓝移,则说明样品中电场分布不均匀。     

外电场极化对纳米氧化锌拉曼活性及气敏性能的影响

采用沉淀法制备了纳米氧化锌粒子,着重对其进行了不同条件(电场强度、极化温度)下的外电场极化处理.以X射线衍射仪和拉曼光谱仪对产物的结构、拉曼位移等进行了表征.测试了氧化锌极化产物在乙醇、丙酮气体中的气敏性能,研究了外电场效应对纳米氧化锌拉曼光谱和气敏性能的影响机制.结果表明,纳米氧化锌样品在外电场中存在着极化电场强度和温度的阈值,当电场强度和温度分别大于9375 V·cm~(-1)和150℃时,纳米氧化锌试片出现明显的漏电现象,极化效应显著降低并消失.在电场强度和温度阈值范围内,外电场极化作用能够导致氧化锌437 cm~(-1)处的拉曼特征峰强度明显降低.随外电场强度和极化温度增加,纳米氧化锌元件在丙酮气体中的灵敏度逐渐升高,在乙醇气体中的灵敏度逐渐降低,即外电场极化可以有效调控纳米氧化锌的气敏选择性.     

Direct-to-indirect band gap conversion by application of electric field in the GaSbAlSb quantum well system

We propose the possibility of direct-to-indirect band-gap conversion in the GaSb/AlSb quantum well (QW) system by application of an electric field. This effect arises because the Г- and L bands are closely-spaced in energy in GaSb. As the electric field increases, the L-level in the proposed quantum well moves lower in energy than the Г-level. We have carried out theoretical calculations in the GaSb/AlSb system that show that such an effect is feasible at moderate electric fields, such as can be obtained by reverse biasing a p-i-n diode, provided that the wells comprise (Al,Ga)SB with about 10% Al, with a thickness of 100 Å. The effects of this band-gap crossover should show up in the intensity and lifetime properties of the luminescence of these quantum-well structures as a function of applied bias.     

Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells

Considering the strong built-in electric field (BEF) induced by the spontaneous and piezoelectric polarizations and the intrasubband relaxation, we investigate the linear and nonlinear intersubband optical absorptions in In_xGa_1-xN/Al_yGa_1-yN strained single quantum wells (QWs) by means of the density matrix formalism. Our numerical results show that the strong BEF is on the order of MV/cm, which can be modulated effectively by the In composition in the QW. This electric field greatly increases the electron energy difference between the ground and the first excited states. The electron wave functions are also significantly localized in the QW due to the BEF. The intersubband optical absorption peak sensitively depends on the compositions of In in the well layer and Al in the barrier layers. The intersubband absorption coefficient can be remarkably modified by the electron concentration and the incident optical intensity. The group-III nitride semiconductor QWs are suitable candidate for infrared photodetectors and near-infrared laser amplifiers.     

Controlling electric field distribution by graded spherical core-shell metamaterials

This paper investigates analytically the electric field distribution of graded spherical core-shell metamaterials, whose permittivity is given by the graded Drude model. Under the illumination of a uniform incident optical field, the obtained results show that the electrical field distribution in the shell region is controllable and the electric field peak’s position inside the spherical shell can be confined in a desired position by varying the frequency of the optical field as well as the parameters of the graded dielectric profiles. It has also offered an intuitive explanation for controlling the local electric field by graded metamaterials.     

偏振方向及结构间耦合作用对空心方形银纳米结构表面等离子体共振的影响

空心方形纳米结构能够激发更大面积的增强电场,故其可以作为衬底用于表面增强拉曼散射.应用离散偶极子近似算法研究了空心方形银纳米结构的消光光谱及其近场电场分布与入射光偏振方向之间的关系.研究表明,空心方形银纳米结构的表面等离子体共振峰不随入射光偏振方向的改变而移动,但是其表面增强电场分布却强烈地依赖于入射光的偏振方向.另外,还讨论了空心方形银纳米结构间的耦合作用对其表面等离子体共振模式的影响.结果发现,可以通过调节结构间的距离来改变结构间的耦合作用,同时改变了表面等离子体共振峰的位置.这些结果将为理解闭合纳米 关键词： 空心方形银纳米结构 表面等离子体 偏振 电场耦合     

Optical activity of microemulsion induced by electric field and its tunable behaviors

It has been shown that optical activity can occur in microemulsion under external electric field and rotation angle can also be tuned by the electric field. A set of microemulsions (water/Span80/transformer oil) with different water concentration were prepared and their optical activity was measured with the changes of applied electric field and θ, the angle between the electric vector of the incident linearly polarized light and the external electric field, using an automatic polarimeter. The experiments indicate that when none of the external electric field, water concentration and θ are zero, there is optical activity in microemulsions. For a given concentration, rotation angle ψ increases with electric field, and it firstly increases, passes through a maximum at C = C0,then monotonically decreases as C increases when electric field keeps constant. The relationship between the rotation angle and θ is also obtained. It is thought that the electric field-induced destroy of spatial symmetry of microemulsion is responsible for the optical activity of microemulsion.     

Electric field effect on the linear and nonlinear intersubband refractive index changes in asymmetrical semiparabolic and symmetrical parabolic quantum wells

By using the displacement harmonic variant method and the compact density matrix approach, the linear and nonlinear intersubband refractive index changes (RICs) in a semiparabolic quantum well (QW) with applied electric field have been investigated in detail. The simple analytical formulae for the linear and nonlinear RICs in the system were also deduced. The symmetrical parabolic QWs with applied electric fields were taken into account for comparison. Numerical calculations on typical GaAs QWs were performed. The dependence of the linear and nonlinear RICs on the incident optical intensity, the frequencies of the confined potential of the QWs and the strength of the applied electric field were discussed. Results reveal that the RICs in the semiparabolic quantum well system sensitively depend on these factors. The calculation also shows that the semiparabolic QW is a more ideal nonlinear optical system relative to the symmetric parabolic QW systems.