Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

The absorption edge of undoped Tl₂Ga₂S₃Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10⁻⁴ eV/K and the absolute zero value of the band gap energy E_gi(0)=2.42 eV were obtained.     

Surface segregation in Nb-doped BaTiO3 films

We have used in situ photoemission spectroscopy to investigate Niobium doping in polycristalline BaTiO₃. The valence band maximum position progressively shifts from 2.5 eV for undoped to 2.84 eV for Nb-doped films. Ceramics and single crystal have been investigated for comparison with thin films. Nb-doped BaTiO₃ ceramics and Nb-doped SrTiO₃ single crystal show higher Fermi level position indicating that our doped films are less conducting regarding their bulk parents. This was confirmed by impedance spectroscopy under variable temperature. Large amount of niobium is clearly observable at surface but the amount of dopant is drastically reduced below the near-surface region, as evidenced by depth profile. Therefore, we provide evidence of surface segregation which would explain the contrasted resistivity values reported in literature for such donor-doped films.     

Characterization and properties of ZnO1−xSx alloy films fabricated by radio-frequency magnetron sputtering

A series of ZnO_1−xS_x alloy films (0 ≤ x ≤ 1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO_1−xS_x films have wurtzite structure with (0 0 2) preferential orientation in O-rich side (0 ≤ x ≤ 0.23) and zinc blende structure with (1 1 1) preferential orientation in S-rich side (0.77 ≤ x ≤ 1). However, when the S content is in the range of 0.23 < x < 0.77, the ZnO_1−xS_x film consists of two phases of wurtzite and zinc blende or amorphous ZnO_1−xS_x phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9 eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO_1−xS_x is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO_1−xS_x films behave insulating, but show n-type conductivity for w-ZnO_1−xS_x and maintain insulating properties for β-ZnO_1−xS_x after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO_1−xS_x alloy are discussed in the present work.     

Theoretical investigation of Cu-containing materials with different valence structure types: BaCu2S2, Li2CuSb,and LiCuS

Optoelectronics research requires cheap materials with a broad spectrum of optical, electronic, and structural properties. The class of Heusler compounds and ternary structures provide many possibilities for finding alternative group IV and III–V semiconductor compounds. This study introduces wider band gap materials for use in solar cells as an alternative to cadmium sulfide buffer layers. The buffer layer is inserted between the absorber layer (p-type) and the transparent window layer (n-type) to enhance the maximum amount of light transmission. Reasonable calculations are reported for the band gaps of copper-containing materials: LiCuS, BaCu₂S₂, and Li₂CuSb. Previous optical analysis measurements of these films determined that the band gaps were 1.8 and 1.9 eV for BaCu₂S₂ and LiCuS, respectively. In general, semiconductor compounds have been studied theoretically, but there are major differences between the experimental and theoretically calculated band gaps. A suitable calculation method for semiconductor compounds is described in this study. For the first time, calculations based on the Engel and Vosko method are introduced for these semiconductor compounds. This method yields band gaps that are comparable to the experimental values, which facilitate the development of microscopic analyses of these compounds. Direct band gaps of 1.15 and 1.7 eV were obtained for BaCu₂S₂ and LiCuS, respectively, whereas the indirect band gap was 0.7 eV for Li₂CuSb.     

Effects of different sintering temperature and Nb2O5 content on structural and magnetic properties of Z-type hexaferrites

Nb-doped Z-type hexaferrites (Ba₃(Co_0.4Zn_0.6)₂Fe₂₄O₄₁) with composition of Ba₃(Co_0.4Zn_0.6)₂Fe₂₄O₄₁+x Nb₂O₅ (where x=0.0, 0.1, 0.2, 0.4, 0.6, 0.8, 1.2, 1.6 and 2.0 wt%) were prepared by a solid-state reaction method. The effects of different sintering temperature (T_s) and Nb₂O₅ content on the sintering behaviors, phase composing, microstructure, and magnetic properties of the samples were investigated. The results from X-ray diffraction and scanning electron microscopy show that as the amount of Nb₂O₅ additive increases, the major phase changes to Z-phase, Simultaneously, M-phase and a small amount of niobate phase appear. The Nb₂O₅ additive promotes the grain growth as reaction center at lower sintering temperature (1220 °C), but at higher temperature (1260 °C), niobate phase separated out in grain boundaries as secondary phase will restrain abnormal grain growth, so closed pores in grains are not formed. The Nb₂O₅ additive can enhance densification, improve initial permeability of hexaferrites by increasing the grain growth of hexaferrite and the displacement of ions in the sintering process due to the aberration and activation of crystal lattice, which is accompanied by the solubility of Nb⁵⁺ in the hexaferrites. A relative density of 96%, maximum initial permeability (32–33), minimum coercivity (454–455 A/m) and resonance frequency above 400 MHz were obtained for the sample with 0.8 wt% Nb₂O₅ sintered at 1260 °C for 6 h.     

Evidence of the primary-color photoluminescence in ion (H,H,C) irradiated and thermal annealed SrTiO3

We have measured photoluminescence (PL) spectrum of (1) thermal-annealed SrTiO₃/Si thin film and undoped SrTiO₃ single crystal; (2) SrTiO₃ single crystal irradiated by high energy (3 MeV) proton, deuterium, and He ion beams and (3) SrTiO₃ single crystal irradiated by low energy (60 keV) H⁺ and C⁻ ions. Two PL emissions are induced in (1) and (2) at visible frequencies 3 and 2.45 eV, while another PL peak is induced at 2 eV in (3). When compared with our previous PL experiments on high-temperature annealed SrTiO₃/SiO₂/Si thin film and 3 MeV proton (H⁺) irradiated STO single crystal, these results confirm that the three PL emissions with blue (3 eV), green (2.45 eV), and red-orange (2 eV) frequencies originate indeed from SrTiO₃. These primary-color PL effect induced at room-temperature makes STO a strong candidate material for future oxide-based optoelectronic application.     

α-In2S3 and β-In2S3 phases produced by SILAR technique

In₂S₃ films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In₂S₃ (cubic) and β-In₂S₃ (tetragonal) phases. The presence of the α-In₂S₃ phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37?eV with increasing thickness.     

Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission,and ellipsometric measurements

The optical properties of Tl₂Ga₂S₃Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400–1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.     

Investigation of the optoelectronic properties of columbite ZnNb2O6 crystal

A high-quality ZnNb₂O₆ single-crystal grown by optical floating zone method has been used as a research prototype to analyze the optoelectronic parameters by measuring the absorption coefficient and transmittance spectra along the b-axis from 200 nm to 1000 nm at room temperature. The optical interband transitions of ZnNb₂O₆ have been determined as a direct transition with a band gap of 3.84 eV. The refractive index, extinction coefficient, and real and imaginary parts of the complex dielectric constants as functions of the wavelength for ZnNb₂O₆ crystal are obtained from the measured absorption coefficients and transmittance spectra. In the Urbach tail of 3.16–3.60 eV, the validity of the Cauchy–Sellmeier equation has also been evaluated. Using the single effective oscillator model, the oscillator energy E_o is found to be 4.77 eV. The dispersion energy E_d is 26.88 eV and ZnNb₂O₆ crystal takes an ionic value.     

Ab initio study of phase stability,thermodynamic and elastic properties of C3N2 derived from cubic C20

In this work, we report a quite different conclusion from Tian et al. [Phys. Rev. B 78 (2008) 235431]. It is proved that β-C₃N₂ is the only phase under high pressure, and α-C₃N₂ does not exist. β-C₃N₂ is a covalent crystal composed of strong CC and CN covalent bonds. Band gap of β-C₃N₂ increases with pressure. The width of antibonding state, shown in partial density of states (PDOS), keeps about 5 eV with rising pressures, which brings stable CN or CC covalent bonds. At sufficiently low temperatures, heat capacity (C_v) is proportional to T³; and at intermediate temperatures, C_v is governed by the details of vibrations of the atoms; finally, C_v reaches to β-C₃N₂'s Dulong–Pettit limit (about 120 J/mol K). Though thermal expansion coefficient (α) increases with temperature, α is less than 1×10⁻⁵ K⁻¹. Elastic constants rise with pressure, but shear moduli is quite steady which increases just a little with pressures.     

Optical properties of Mn-activated Na2SnF6 and Cs2SnF6 red phosphors

Alkaline hexafluorostantanate red phosphors Na₂SnF₆:Mn⁴⁺ and Cs₂SnF₆:Mn⁴⁺ are synthesized by chemical reaction in HF/NaMnO₄ (CsMnO₄)/H₂O₂/H₂O mixed solutions immersed with tin metal. X-ray diffraction patterns suggest that the synthesized phosphors have a tetragonal symmetry with the space group D_4h¹⁴ (Na₂SnF₆:Mn⁴⁺) and a trigonal symmetry with the space group D_3d³ (Cs₂SnF₆:Mn⁴⁺). Photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and the Raman scattering techniques are used to investigate the optical properties of the phosphors. The Franck-Condon analysis of the PLE data yields the Mn⁴⁺-related optical transitions to occur at ∼2.39 and ∼2.38 eV (⁴A_2g→⁴T_2g) and at ∼2.83 and ∼2.76 eV (⁴A_2g→⁴T_1g) for Na₂SnF₆:Mn⁴⁺ and Cs₂SnF₆:Mn⁴⁺, respectively. The crystal field parameters (Dq) of the Mn⁴⁺ ions in the Na₂SnF₆ and Cs₂SnF₆ hosts are determined to be ∼1930 and ∼1920 cm⁻¹, respectively. Temperature-dependent PL measurements are performed from 20 to 440 K in steps of 10 K, and the obtained results are interpreted by taking into account the Bose-Einstein occupation factor. Comprehensive discussion is given on the phosphorescent properties of a family of Mn⁴⁺-activated alkaline hexafluoride salts.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Silicon MIS diodes with Cr2O3 nanofilm: Optical, morphological/structural and electronic transport properties

In this work we report the optical, morphological and structural characterization and diode application of Cr₂O₃ nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr₂O₃ nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr₂O₃ on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr₂O₃ film is 3.08 eV. The PL measurement shows that the Cr₂O₃ nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr₂O₃/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr₂O₃/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 × 10¹³ eV⁻¹ cm⁻² to 8.45 × 10¹² eV⁻¹ cm⁻².     

Investigation of host-to-activator energy transfer and surface losses in SrY2O4:Eu under VUV excitation

We have completed a study of the optical properties of SrY₂O₄:Eu³⁺ under vacuum ultraviolet (VUV) excitation. Reflectance measurements on the undoped material yield a calculated band gap of about 6.1 eV. Studies on the doped material indicate that Eu³⁺ occupies the Y(1) and Y(2) sites in this host. Host-to-activator energy transfer calculations indicate a preference for transfer to Eu³⁺ at the Y(2) site. Modeling of the transfer efficiency data leads us to estimate that about 35% of absorbed radiation is lost to the surface under excitation near the band edge.     

Effects of Nb substitution for Zr on the phases,microstructure and magnetic properties of Co80Zr18−xNbxB2 melt-spun ribbons

The phases, microstructure, and magnetic properties of Co₈₀Zr_18−xNb_xB₂ (x=1, 2, 3, and 4) melt-spun ribbons were investigated. The small substitution of Nb for Zr in the Co–Zr–B melt-spun ribbons resulted in the improvement of magnetic properties, especially the coercivity. The main effect of added Nb on the coercovity of Co–Zr–Nb–B melt-spun ribbons, originated from modification of the grain size of Co₁₁Zr₂ phase. The coercivity of the Co–Zr–Nb–B melt-spun ribbons depends on the annealing temperature. The optimal magnetic properties of H_c=5.1 kOe, and (BH)_max=3.4 MGOe were obtained in the Co₈₀Zr₁₅Nb₃B₂ melt-spun ribbons annealed at 600 °C for 3 min.     

Preparation and luminescent characteristic of Li3NbO4 nanophosphor

Synthesis and luminescence properties of Li₃NbO₄ oxides by the sol-gel process were investigated. The products were characterized by the X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and absorption spectra. The PL spectra excited at 247 nm have a broad and strong blue emission band maximum at 376 nm, corresponding to the self-activated luminescence of the niobate octahedra group [NbO₆]⁷⁻. The optical absorption spectra of the samples sintered at temperatures of 600 and 700 °C exhibited the band-gap energies of 4.0 and 4.08 eV.     

Origin of green luminescence in PbWO4 crystals

Characteristics of two green emission bands, G(I) and G(II), and their origin were investigated within 0.4-300 K under photoexcitation in the 3.4-6.0 eV energy range for undoped and Mo⁶⁺-, Mo⁶⁺ , Y³⁺-, Mo⁶⁺, Nb⁵⁺-, Mo⁶⁺, Ce³⁺-, Cr⁶⁺-, La³⁺-, Ba²⁺- and Cd²⁺-doped PbWO₄ crystals with different concentrations of impurity and intrinsic defects, grown by different methods and annealed at different conditions. The G(I) emission band, observed at low temperatures, located around 2.3-2.4 eV and excited around 3.9 eV, is usually a superposition of many closely positioned bands. The G(I) emission of undoped crystals is assumed to arise from the WO₄²⁻ groups located in the crystal regions of lead-deficient structure. In Mo⁶⁺-doped crystals, this emission arises mainly from the MoO₄²⁻ groups themselves. The G(II) emission band located at 2.5 eV is observed only in the crystals, containing the isolated oxygen vacancies — WO₃ groups. This emission appears at T>160 K under excitation around 4.07 eV as a result of the photo-thermally stimulated disintegration of localized exciton states and subsequent recombination of the produced electron and hole centres near WO₃ groups. The G(II) emission accompanies also thermally stimulated recombination processes in PbWO₄ crystals above 150 K. Mainly the G(II) emission is responsible for the slow decay of the green luminescence in PbWO₄ crystals.     

Optical characterization of fourfold (Td)- and sixfold (Oh)-transition-metal species in MgAl2O4:Co by time-resolved spectroscopy

This work investigates the origin of novel visible photoluminescence (PL) bands observed in the spinel MgAl₂O₄:Co²⁺. Besides the well-known fourfold-coordinated Co²⁺(T_d) PL at 670 nm [N.V. Kuleshov, V.P. Mikhailov, V.G. Scherbitsky, P.V. Prokoshin and K.V. Yumashev, J. Lumin. 55 (1993) 265.], a rich structured PL band at 686 nm was also observed that we associate with uncontrolled impurities of sixfold coordinated Cr³⁺(O_h) by time-resolved spectroscopy and lifetime measurements and their variation with temperature. We also show that the lifetime of the Co²⁺(T_d) emission at 670 nm varies from τ=6.7 μs to 780 ns on passing from T=10 to 290 K. This unexpected behaviour for T_d systems is related to the excited-state crossover (⁴T₁↔²E), making the emission band to transform from a narrow-like emission from ²E at low temperature to a broad structureless band from ⁴T₁ at room temperature.     

Influence of [S2O3]/[Sm] on Sm2S3 thin films deposited by liquid phase deposition method on self-assembled monolayers

Sm₂S₃ thin films were prepared on Si (1 0 0) substrates using SmCl₃ and Na₂S₂O₃ as precursors by liquid phase deposition method on self-assembled monolayers. The influence of the molar concentration ratio of [S₂O₃²⁻]/[Sm³⁺] on the phase compositions, surface morphologies and optical properties of the as-deposited films were investigated. The as-deposited Sm₂S₃ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) and photoluminescence spectrum (PL). Results show that it is important to control the [S₂O₃²⁻]/[Sm³⁺] during the deposition process and monophase Sm₂S₃ thin films with orientation growth along (0 1 1) direction can be achieved when [S₂O₃²⁻]/[Sm³⁺] = 2.0, pH 3.0, with citric acid as a template agent. The as-deposited thin films exhibit a dense and crystalline surface morphology. Good transmittance in the visible spectrum and excellent absorbency of ultraviolet light of the thin films are observed, and the band gap of the thin films first decrease and then increase with the increase of the [S₂O₃²⁻]/[Sm³⁺]. The as-deposited thin films also exhibit red photoluminescence properties under visible light excitation. With the increase of the [S₂O₃²⁻]/[Sm³⁺] in the deposition solution, the PL properties of Sm₂S₃ thin films are obviously improved.     

Optical properties of p-type CuAlO2 thin film grown by rf magnetron sputtering

We report the structural and optical properties of copper aluminium oxide (CuAlO₂) thin films, which were prepared on c-plane sapphire substrates by the radio frequency magnetron sputtering method. X-ray photoelectron spectroscopy (XPS) along with X-ray diffraction (XRD) analysis confirms that the films consist of delafossite CuAlO₂ phase only. The optical absorption studies show the indirect and direct bandgap is 1.8 eV and 3.45 eV, respectively. Room temperature photoluminescence (PL) measurements show three emission peaks at 360 nm (3.45 eV), 470 nm (2.63 eV) and 590 nm (2.1 eV). The first one is near band edge emission while the other two are originated from defects.