Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

The magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50–700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of M_s=298 emu/cm³ and H_c=2540 Oe.     

Electrical characteristics of insulating aluminum nitride MIS nanostructures

Capacitance-voltage measurements of high quality PECVD and MBE grown aluminum nitride (AlN) thin films have been performed. The prepared films have shown polycrystalline (0 0 2)-preferential orientation, and were deposited on p-type Si (1 0 0) substrates with Pt forming the metal gate in a metal-insulator-semiconductor (MIS) configuration. The structure, crystallinity, texture and insulating properties have been found to depend on film thickness and were substantially influenced by the increase of the thickness. C-V measurements of the epitaxial and PECVD films were carried out and their insulating characteristics with increasing thickness (200-1000 nm) were investigated. The epitaxial films exhibited no hysteresis in capacitance behaviour, owing to better crystalline quality over the PECVD grown ones. Capacitance curves versus bias voltage have also been acquired at different temperatures; 10 K, 30 K and 50 K for deposited polycrystalline AlN films of (0 0 2) orientation. We have found that the defects trapped in the Pt/AlN/Si structure played a key role in dominating the overall behaviour of the C-V measurement curves. The trapped charges at the interface between the AlN insulating film and Si substrate caused the capacitance characteristics to shift to negative voltages, and the estimated charge density was of the order of 10¹⁰ and 10⁸ cm⁻² eV⁻¹ for the PECVD and epitaxial samples respectively. The I-V measurements referred to space-charge conduction mechanism, and the deduced leakage current was found to be of the order of 10⁻⁹ A at 200 nm film thickness.     

Effect of CeO2 buffer layer thickness on the structures and properties of YBCO coated conductors

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on inclined-substrate-deposited (ISD) MgO-textured metal substrates by pulsed laser deposition. CeO₂ was deposited as a buffer layer prior to YBCO growth. CeO₂ layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scans, pole-figure, ?-scans and rocking curves of Ω angles. The significant influence of the CeO₂ thickness on the structure and properties of the YBCO films were demonstrated and the optimal thickness was found to be about 10 nm. High values of T_c = 91 K and J_c = 5.5 × 10⁵ A/cm² were obtained on YBCO films with optimal CeO₂ thickness at 77 K in zero field. The possible mechanisms responsible for the dependence of the structure and the properties of the YBCO films on the thickness of the CeO₂ buffer layers are discussed.     

Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an important midgap level E_C−0.74 eV in CdTe and Cd_1−xZn_xTe (x<0.1), the materials of choice in today’s X-ray and gamma ray detector technology. We confirmed the direct correlation between Y-emission and the dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10⁵ cm⁻²). Our results correlate with recent findings that dislocation-induced defects and their clusters degrade charge collection in radiation detectors. Photoluminescence of midgap levels can serve as a tool to identify areas of degraded performance in semi insulated CdTe and CdZnTe crystals for radiation detectors.     

Effect of current density on the microstructure and corrosion behaviour of plasma electrolytic oxidation treated AM50 magnesium alloy

Plasma electrolytic oxidation (PEO) of an AM50 magnesium alloy was accomplished in a silicate-based electrolyte using a DC power source. Coatings were produced at three current densities, i.e. 15 mA cm⁻², 75 mA cm⁻², and 150 mA cm⁻² and were characterised for thickness, roughness, microstructural morphology, phase composition, and corrosion resistance. Even though the 15 min treated coatings produced at higher current density levels were thicker, they showed poor corrosion resistance when compared to that of the coatings obtained at 15 mA cm⁻². Short-term treatments (2 min and 5 min) at 150 mA cm⁻² yielded coatings of thickness and corrosion resistance comparable to that of the low current density coatings. The superior corrosion resistance of the low thickness coatings is attributed to the better pore morphology and compactness of the layer.     

Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications

Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800 nm in thickness were deposited on soda-lime glass substrates keeping at 473 K under 0.4 Pa working pressure, 150 W power, 100 μs duty time, 5 μs pulse reverse time, 10 kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39 × 10⁻⁴ Ω cm measured at room temperature with average visible optical transmittance, T_total of 81.9% under which the carrier concentration and mobility were 1.95 × 10²¹ cm⁻³ and 5.02 cm² V⁻¹ s⁻¹, respectively. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, 33% KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30 s exhibited high T_total = 78.4% with haze value, H_T = 0.1 and good electrical properties, ρ = 8.5 × 10⁻⁴ Ω cm while those etched in 5% oxalic acid for 150 s had desirable H_T = 0.2 and relatively low electrical resistivity, ρ = 7.9 × 10⁻⁴ Ω cm. However, the visible transmittance, T_total was declined to 72.1%.     

The second hyperpolarizability of CdTe nanocrystals using polarization-resolved degenerate four-wave mixing

Polarization-resolved forward degenerate four-wave mixing (DFWM) in a nonresonant region revealed the effective third-order nonlinear susceptibility of colloidal CdTe nanocrystals (NCs) with the size near the Bohr radius and various concentrations. The second hyperpolarizabilities, and , of the CdTe NCs were ∼1.15 × 10⁻⁴¹ m⁵/V² and ∼3.01 × 10⁻⁴² m⁵/V² from the measurement of the concentration-dependent third-order nonlinear susceptibility of CdTe NCs, respectively. The ratio (/) of the hyperpolarizabilities was ∼0.26, which indicated a large contribution of an electronic polarization process to the third-order nonlinearity of CdTe NCs.     

Femtosecond laser-induced damage of gold films

Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F_th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm⁻² (1-on-1), 0.5 J cm⁻² (10-on-1), 0.4 J cm⁻² (100-on-1), 0.25 J cm⁻² (1000-on-1), and 0.2 J cm⁻² (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L_c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. L_c is by more than an order of magnitude larger than the optical absorption length of α⁻¹ ≈ 12 nm at 793 nm wavelength.     

Characterization of CdTe films with in situ CdCl2 treatment grown by a simple vapor phase deposition technique

A unique vapor phase deposition (VPD) technique was designed and built to achieve in situ CdCl₂ treatment of CdTe film. The substrate temperature was 400 °C, and the temperature of CdTe mixture with CdCl₂ source was 500 °C. The structural and morphological properties of CdTe have been studied as a function of wt.% CdCl₂ concentration by using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). XRD measurements show that the presence of CdCl₂ vapor induces (1 1 1)-oriented growth in the CdTe film. SEM measurements have shown enhance growth of grains, in the presence of CdCl₂. From AFM the roughness of the films showed a heavy dependence on CdCl₂ concentration. In the presence of 4% CdCl₂ concentration, the CdTe films roughness has a root mean square (rms) value of about 275 Å. This value is about 831 Å for the non-treated CdTe films.     

Influence of preparation conditions on the dispersion parameters of sprayed iron oxide thin films

Iron oxide thin films were prepared by spray pyrolysis technique (SPT) at various substrate temperatures (T_sub) and different deposition time. X-ray diffraction (XRD) analysis showed that, at T_sub ≥ 350 °C, a single phase of α-Fe₂O₃ film is formed which has the rhombohedral structure. Moreover, the crystallinity was improved by increasing T_sub. The effect of T_sub as well as deposition time on the optical dispersion of these films has been investigated. The optical transmittance and reflectance measurements were performed by using spectrophotometer in the wavelength range from 300 to 2500 nm. The refractive index was determined by using Murmann's exact equation. It was observed that, the refractive index increased with increasing in both the T_sub and film thickness. The optical dispersion parameters have been evaluated and analyzed by using Wemple-Didomenico equation. The obtained results showed that, the dielectric properties have weak dependencies of growth temperature and film thickness. At T_sub ≥ 350 °C, the average values of oscillator energy, E_o and dispersion energy, E_d were found to be 5.96 and 34.08 eV. While at different thickness, the average values of dispersion energies were found to be 3.93 and 17.08 eV. Also, the average values of oscillator strength S_o and single resonant frequency ω_o were estimated 10.78 × 10¹³ m⁻² and 5.99 × 10¹⁵ Hz, while at different thickness were evaluating 4.81 × 10¹³ m⁻² and 6.11 × 10¹⁵ Hz. Furthermore, the optical parameters such as wavelength of single oscillator λ_o, plasma frequency ω_p, and dielectric constant ? have been evaluated. The carrier concentration N_opt by using Drud's theory was obtained the range of 5.07 × 10²⁵ m⁻³ to 1.04 × 10²⁶ m⁻³.     

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

The general equation T_ove = L cos  θ ln(R_exp/R₀ + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO₂/SiO₂/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO₂ layer to the thickness of the HfO₂ overlayer was counterbalanced by multiplying the ratio between the intensity of Si⁴⁺ from a thick SiO₂ film and that of Si⁰ from a Si(1 0 0) substrate to the intensity of Si⁴⁺ from the HfO₂/SiO₂/Si(1 0 0) film. With this approximation, the thickness levels of the HfO₂ overlayers showed a small standard deviation of 0.03 nm in a series of HfO₂ (2 nm)/SiO₂ (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO₂ overlayers in a series of HfO₂ (1-4 nm)/SiO₂ (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO₂ overlayer could be determined.     

Enhancement of L10 ordered FePt by Pt buffer layer

L₁₀-ordered FePt thin films prepared by molecular-beam epitaxy on MgO (0 0 1) substrate at 320 °C with different thickness of Pt buffer layer have been investigated. The out-of-plane coercivity increases with increasing thickness of Pt buffer. The maximum values of the long-range order parameter and uniaxial magnetic anisotropy energy are 0.72 and 1.78×10⁷ erg/cm³, respectively, for films with 12 nm thick Pt buffer layer, where the c/a ratio (0.976) shows the minimum value. The reason for the enhancement in ordering is due to the proper lattice strains Pt buffer bestows on FePt layer, these strains are equal to the contraction in lattice parameter c and the expansion in a. Studies of angular-dependent coercivity revealed that the magnetization reversal behaviour shifts from a domain-wall motion dominated case towards a near rotational mode with increasing thickness of Pt buffer layer.     

Second-harmonic generation in transparent surface crystallized GeS2-Ga2S3-CdS chalcogenide glasses

Transparent surface crystallized glasses containing CdGa₂S₄ nonlinear optical crystal were prepared by the 70GeS₂ · 15Ga₂S₃ · 15CdS (GGC15) chalcogenide glass. Average diameters of crystallites are about 150 nm and 600 nm for heating at 405 °C for 48 and 108 h (named GGC15-48 and GGC15-108), respectively, and the thickness of the surface crystallized layer was approximately 15 μm. By using the Maker fringe measurement, prominent second-harmonic generation was observed from these crystallized glasses, and the χ⁽²⁾ of the GGC15-48 sample is calculated to be as well as 38.85 pm/V, and the value is 13.7 pm/V for the GGC15-108. They are promising to be applied in photoelectric and all-optical field in the future.     

Study on contamination of projection optics surface for extreme ultraviolet lithography

Ru-capped Mo/Si multilayer mirrors were irradiated by EUV in a vacuum atmosphere with ethanol or decane gas, and their reflectivity changes by contamination were investigated by changing the amount of introduced gas. The reflectivity hardly decreased by EUV irradiation in the ethanol-introduced atmosphere. On the other hand, the reflectivity decreased by about 5% in the decane-introduced atmosphere at a decane pressure of P_Decane = 1.3 × 10⁻⁴ Pa, an EUV power of about 200 mW/mm², and an EUV dose of 150 J/mm². EUV irradiation to the Ru-capped multilayer mirrors was also performed in the presence of water vapor and decane. The surface oxidation by EUV irradiation with a water vapor pressure of PH₂O=1.3×10⁻⁵ Pa was controlled by the introduction of decane at a pressure of P_Decane = 7.0 × 10⁻⁷ to 1.3 × 10⁻⁶ Pa.     

Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5×10⁻³ Ω cm and the mobility increased from 2 to 37 cm² V⁻¹ s⁻¹ when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10²⁰ cm⁻³. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 μm.     

A simple fluorescence quenching method for roxithromycin determination using CdTe quantum dots as probes

A new method for the determination of roxithromycin based on the fluorescence quenching of 3-mercaptopropionic acid-capped CdTe quantum dots (MPA-CdTe QDs) was developed. In ethanol medium, the fluorescence of CdTe quantum dots at 552 nm was quenched in the presence of roxithromycin. Based on this a simple, sensitive, and selective method for rapid determination of roxithromycin was described. Reaction time, interfering substances on the fluorescence quenching, and mechanism of the interaction of CdTe QDs with roxithromycin were investigated. After optimization, the proposed method allows the determination of roxithromycin over the range 25.0-350.0 μg ml⁻¹. The detection limit is 4.6 μg ml⁻¹. The proposed method was successfully applied to commercial capsules and tablets with satisfactory results. The recovery of the method was in the range of 96.8-102.5%.     

System dependence of the correlation function of IMFs in Ar + Sn at 35 MeV/u

The inclusive reduced velocity correlation functions of the intermediate mass fragments were measured in the reactions of ³⁶Ar + ^112,124Sn at 35 MeV/u. The anti-correlation is observed to be stronger in ³⁶Ar + ¹²⁴Sn system than that in ³⁶Ar + ¹¹²Sn. The difference of the correlation functions between the two reactions is mainly contributed by the particle pairs with high momenta. A three body Coulomb repulsive trajectory model is employed to calculate the emission time scale of the IMFs for the two systems. The time scale is 150 fm/c in ³⁶Ar + ¹¹²Sn and 120 fm/c in the ³⁶Ar + ¹²⁴Sn, respectively.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cell

Degradation and short shelf life have been observed experimentally in poly(3-hexylthiophene) (P3HT): 6,6-phenyl C61-butyric acid methyl ester (PCBM) based blend solar cells. Both dark and illuminated current–voltage characteristics could be explained quantitatively with a proposed single model for a typical degraded organic solar cell-glass/ITO/PEDOT:PSS/P3HT:PCBM/Al. It has been found that surface state density, interface thickness, tunneling coefficient and occupation probabilities of the interface states becomes important with the passage of time. To look into the problem the activity at ITO/PEDOT:PSS and P3HT:PCBM/Al interfaces are studied using realistic values of the interfaces. The experimental J–V characteristics is well explained with the inclusion of tunneling current through these surface states and becomes the dominant current component for the degraded cell. It is also found that surface state density increases to 10¹²–10¹³ cm⁻² eV⁻¹, which has been verified with C–V measurements and also is in agreement with our proposed model for BHJ solar cell after 150 h of fabrication.