(Ga,Mn)As 体系中Mn自补偿效应的第一性原理研究

基于密度泛函理论的赝势平面波方法计算了处于填隙位置磁性原子(MnI)对(Ga,Mn) As体系电子结构和磁性的影响. 计算结果表明MnI在GaAs中是施主；代替Ga位的MnGa 与MnI的自旋按反铁磁序排列；静电相互作用使MnGa，MnI倾向于形成MnGa_MnI对. MnI的存在一方面补偿了(Ga,Mn)As中的空穴，降低了空穴浓度；同时还使邻近的MnG a失活. MnI的存在对获得高居里温度的(Ga,Mn)As是极为不利的. 关键词： (Ga Mn)As 稀磁半导体 密度泛函理论     

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据. 关键词： (Ga Mn)As稀磁半导体 时间分辨克尔光谱 电子自旋弛豫 DP机理     

(GaMn)As体系中Mn无序对其电子结构及磁性影响的第一性原理研究

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Uniaxial strain-dependent magnetic and electronic properties of (Ga,Mn)As nanowires

Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite(Ga,Mn)As nanowires(NWs) grown along the [0001] direction were investigated based on density functional theory(DFT). We found that(Ga,Mn)As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the NWs. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.     

稀磁半导体(Ga,Mn)As薄膜激光诱导超快磁化动力学过程拟合方法探究

本文对稀磁半导体(Ga, Mn)As薄膜中超快激光诱导磁化动力学响应信号的不同拟合方法进行了对比分析. 通过Landau-Lifshitz-Gilbert(LLG)方程的数值拟合发现, 由于薄膜平面内和平面外磁光响应强度不同, 磁矢量三维进动的叠加可以导致多个频率振动模式的假象. 当使用高于(Ga, Mn)As带边的能量激发时, 磁化进动的磁光响应信号中叠加着来自光极化载流子的响应, 此时单纯利用LLG方程对薄膜整体磁化动力学过程拟合应谨慎使用. 本工作为正确分析和理解脉冲激光对(Ga, Mn)As铁磁性的超快调控提供了拟合方法上的指导.     

(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy

(In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along [−110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires.     

MFM and Raman studies in PEMBE-grown (Ga,Mn)N thin films showing room-temperature ferromagnetism

We present the room-temperature ferromagnetism in the (Ga,Mn)N films grown on n-type GaN templates by plasma-enhanced molecular beam epitaxy for semiconductor spintronic device applications. Despite of the possible interface effects between the (Ga,Mn)N layers and n-type GaN templates, the (Ga,Mn)N films were found to exhibit the ferromagnetic ordering above room temperature. The magnetic force microscopy identified the magnetic domains with the different magnetic orientations at room temperature, indicating the existence of the ferromagnetic long-range ordering. In Raman spectra, an additional peak at 578 cm⁻¹ was observed, which is attributed to the local vibration of substitutional Mn in the (Ga,Mn)N lattice. Therefore, it is believed that the ferromagnetic ordering in (Ga,Mn)N is due to the carrier-mediated Ruderman-Kittle-Kasuya-Yosida interaction.     

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.     

Magnetic properties of (Ga,Mn)As

A summary of experimental findings and theoretical modelling of micromagnetic properties of zinc-blende ferromagnetic semiconductor (Ga,Mn)As is presented. It is shown that the Zener p–d model explains quantitatively observed Curie temperatures in compensation free samples and that major strain-related effects are correctly accounted for, including the presence of the magnetization reorientation transition, observed as a function of hole concentration and temperature. It is evidenced that a presence of a small trigonal distortion could account for both the presence and properties of uniaxial in-plane magnetic anisotropy.     

Prediction of enhanced ferromagnetism in (Ga,Mn)As by intrinsic defect manipulation

In the diluted magnetic semiconductor (Ga,Mn)As the excess of As incorporated as As antisites (As_Ga) is responsible for the hole compensation. The As_Ga defect can be transformed into a As interstitial–Ga vacancy pair (As_i–V_Ga) upon illumination. In this paper we study the effects of such a transition on the ferromagnetism of (Ga,Mn)As using density functional theory within the local spin density approximation. We find that the ferromagnetic order in (Ga,Mn)As is strongly enhanced if As_Ga are transformed into As_i–V_Ga pairs, since the hole compensation is reduced. This suggests a valuable way to tune the carrier concentration and hence the T_c in (Ga,Mn)As, without changing the Mn concentration nor the microscopic configuration of the Mn ions.     

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.     

Mn distribution and spin polarization in Ga(1-x)Mn x As

Using the density functional full-potential linearized augmented plane wave approach, the x-ray absorption and magnetic circular dichroism (XMCD) spectra of Ga(1-x)Mn x As are calculated. Significantly, XMCD of Mn is highly sensitive to the change in environment, and thus can be utilized to characterize impurity distribution. The nature of Mn-induced spin polarization on Ga and As sites, vital for the carrier mediated magnetic ordering, is discussed in light of computational and experimental results.     

Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack

We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.     

Mixed magnetic phases in (Ga,Mn)As epilayers

Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] to [110] with increasing temperature can be explained by the reduced contribution of 100 cubic anisotropy to the magnetic properties above the transition temperature of the (Ga,Mn)As matrix.     

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230  ^°C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers.     

Growth and properties of self‐catalyzed (In,Mn)As nanowires

Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

The effect of ferromagnetic layers on the spin polarization of holes and electrons in ferromagnet-semiconductor superlattices with a fixed Mn δ-layer thickness of 0.11 nm and different GaAs interlayer thicknesses varying in the range from 2.5 to 14.4 nm and a fixed number of periods (40) is studied by means of hot-electron photoluminescence (HPL). Here, our study of the HPL demonstrates that the holes in δ-layers of (Ga,Mn)As DMS occupy predominantly the Mn acceptor impurity band. The width of the impurity band decreases with the increase of the interlayer distance. We also found that an increase in the GaAs interlayer thickness softens the magnetic properties of the ferromagnetic layers as well as reduces the carrier polarization. It is demonstrated that the hole spin polarization in the DMS layers and spin polarization of electrons in nonmagnetic GaAs are proportional to the sample magnetization.     

Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 microm2 device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2 x 10(5) A/cm2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.     

(Ga,Mn)As中电流诱导自旋极化的磁光Kerr测量

在GaAs吸收带边附近, 利用磁光Kerr效应测量了(Ga,Mn)As和p-GaAs样品的电流诱导Kerr旋转谱和反射谱, 两者都呈现出Lorentz曲线形状. 电流诱导Kerr旋转角和反射率随着电流的增大而增大, Kerr角与电流的大小成正比关系, 反射率与电流的平方成正比关系. (Ga,Mn)As的Kerr旋转角比p-GaAs的大了一个数量级, 这说明Mn原子的掺杂使得电流诱导的自旋极化增强. 另外, 还测量了温度和入射光偏振方向对电流诱导Kerr旋转谱和反射谱的影响. 发现随着温度的升高, Kerr谱和反射谱均向长波方向移动, 这与GaAs带边随温度的变化是一致的.     

Spin-wave resonance as a tool for probing surface anisotropies in ferromagnetic thin films: Application to the study of (Ga,Mn)As

In this paper we provide a concise review of present achievements in the study of spin-wave resonance (SWR) in ferromagnetic semiconductor (Ga,Mn)As thin films. The theoretical treatment of the experimental SWR data obtained so far concentrates specifically on the spherical surface pinning (SSP) model, in which the surface spin pinning energy is expressed by configuration angles (the out-of-plane polar angle $?$ and the in-plane azimuthal angle $\phi$) defining the direction of surface magnetization in the considered thin film. The model is based on a series expansion of the surface spin pinning energy; the terms in the series represent the respective pinning contributions from the cubic anisotropy as well as uniaxial anisotropies. Comparing theory with the reported experimental studies of SWR in thin films of the ferromagnetic semiconductor (Ga,Mn)As, we find that besides the first-order cubic anisotropy, higher-order cubic anisotropies (in the second and third orders) as well as uniaxial anisotropies (perpendicular in the first and second orders, and in-plane diagonal) occur on the surface of this material. We use our results to plot a 3D hypersurface visualizing the angle dependence of the surface spin pinning energy in configurational space. An advantage of this spatial representation is that the shape of the obtained hypersurface allows us to predict new SWR effects that have not yet been observed experimentally. Prospective experimental studies for the verification of this surface pinning model would bring new insight into the surface anisotropy phenomenon in (Ga,Mn)As thin films and help complete the knowledge in this field, the shortage of which in the literature available to date is becoming bothersome.