利用正电子湮没技术研究钾掺杂钨合金中的缺陷

钨合金中钾的掺杂会引入大量的缺陷,如尺寸几十纳米的钾泡、高密度的位错以及微米量级的晶粒带来的晶界等,这些缺陷的浓度和分布直接影响合金的服役性能.本文运用正电子湮没谱学方法研究钾掺杂钨合金中的缺陷信息,首先模拟计算了合金中各种缺陷的正电子湮没寿命,发现钾的嵌入对空位团、位错、晶界等缺陷的寿命影响很小;然后测量了不同钾含量掺杂钨合金样品的正电子湮没寿命谱,建立三态捕获模型,发现样品中有高的位错密度和低的空位团簇浓度,验证了钾对位错的钉扎作用,阐述了在钾泡形成初期是钾元素与空位团簇结合并逐渐长大的过程;最后使用慢正电子多普勒展宽谱技术表征了样品中缺陷随深度的均匀分布和大量存在,通过扩散长度的比较肯定了钾泡、晶界等缺陷的存在.     

Tunable monoenergy positron annihilation spectroscopy of polyethylene glycol thin films

Doppler broadening and coincidence Doppler broadening of annihilation radiation experiments have been performed in three kinds of polyethylene glycol(PEG) membrane formed with different average molecular weight using the tunable monoenergy slow positron probe as a function of implantion energy. The obtained positron annihilation parameters are interpreted from two aspects: surface effect and differences in micro-structure or chemical environment of positron annihilation. The experimental results show that the regulation of densification of PEG molecular packing and distribution uniformity from the near surface layer to the bulk region in the film forming process can be well realized by changing its molecular weight. Combining a variable monoenergetic slow positron beam and these two positron annihilation spectroscopy methods is a powerful tool to study positron annihilation characteristics and for polymeric thin-film fine structure analysis.     

慢正电子束流技术在金属/合金微观缺陷研究中的应用

正电子湮没谱学技术是研究材料微观结构非常有效的一种核谱学分析方法, 主要用于获取材料内部微观结构的分布信息, 特别是微观缺陷结构及其特性等传统表征方法难以获取的微观结构信息. 近年来, 在慢正电子束流技术快速发展的基础上, 正电子湮没谱学技术在薄膜材料表面和界面微观结构的研究中得到了广泛应用. 特别是该技术对空位型缺陷的高灵敏表征能力, 使其在金属/合金材料表面微观缺陷的形成机理、缺陷结构特性及其演化行为等研究方面具有独特的优势. 针对材料内部微观缺陷的形成、演化机理以及缺陷特性的研究, 如缺陷的微观结构、化学环境、电子密度和动量分布等, 正电子湮没谱学测量方法和表征分析技术已经发展成熟. 而能量连续可调的低能正电子束流, 进一步实现了薄膜材料表面微观结构深度分布信息的实验表征. 本文综述了慢正电子束流技术应用研究的最新进展, 主要围绕北京慢正电子束流装置在金属/合金材料微观缺陷的研究中对微观缺陷特性的表征和表面微观缺陷演化行为的应用研究成果展开论述.     

Vacancy-solute complexes in aluminum

Several vacancy-solute complexes in the Al matrix are examined theoretically. In particular, these are V-Cu, V-Cd, V-In, V-Sn, V-Si and V-Fe. We concentrate on coincidence Doppler broadening (high momentum) profiles and positron lifetimes that bring complementary information about these defects. Positron calculations are carried out utilizing the atomic superposition method employing realistic atomic configurations obtained using an ab initio pseudopotential method. In this study we inspect to what extent such defects are detectable and differentiable using positron annihilation techniques. The influence of lattice relaxations around defects on the positron properties turns out to be important and is also debated. The obtained results are discussed in connection with experimental data published in literature.     

Characterization of defects in a martensitic CuAlNi shape-memory alloy

A water-quenched martensitic CuAlNi shape-memory alloy was investigated by a combination of coincidence Doppler broadening and positron-lifetime spectroscopy, supported by positron-lifetime calculations. We find a high defect concentration in the as-quenched samples. The positron-lifetime calculations suggest that the defects are not only single vacancies but also vacancies associated with dislocations and stacking faults. Annealing in the martensitic phase has no significant influence on the vacancy concentration but results in a different chemical environment around the vacancies. After aging in the austenitic phase the vacancy concentration decreases significantly. PACS 61.72.Ji; 78.70.Bj     

Vacancy-solute complexes and their clusters in iron

In this contribution, several vacancy-solute complexes in iron are investigated theoretically from the viewpoint of positron annihilation. In particular, V-Si, V-P, V-Cr, V-Mn, V-Ni, V-Cu and V-Mo complexes are examined. In addition, nano-sized vacancy-Cu clusters in the Fe matrix are also studied. We concentrate on positron lifetimes and coincidence Doppler broadening profiles that bring complementary information about the studied complexes and their clusters. Positron calculations are carried out using the atomic superposition method employing realistic atomic configurations obtained recently using an ab initio pseudopotential method (vacancy-solute complexes) and Monte Carlo/molecular dynamics methods (vacancy-Cu clusters). The main aim of this study is to predict as to what extent such defects are detectable and differentiable using positron annihilation techniques. The results obtained are discussed in the context of experimental data available in the literature.     

Vacancy defects induced in sintered polished UO2 disks by helium implantation

Vacancy defects have been investigated in sintered polished and annealed uranium oxide disks. Slow positron beam coupled with Doppler broadening spectrometer was used to probe the track region of 1 MeV ³He ions implanted in uranium dioxide (UO₂) disks. The low and high momentum annihilation fractions, S and W, respectively, were measured in the first micrometer near surface region of the disks as a function of positron energy. The S and W values indicate that the 1 MeV He ions induce vacancy defects in the track region of their range. The vacancy defect depth distribution is heterogeneous. The positron trapping at these vacancy defects increases with the depth and with the implantation fluence indicating an increase of the vacancy defect concentration. The nature of the induced vacancy defects does not change with the fluence.     

Doppler程序对金红石型TiO_2的空位缺陷研究

金红石型Ti O2是一种非常好的稀磁半导体材料,其自身的本征缺陷与室温铁磁性起源密切相关.本文利用Doppler程序在广义梯度理论(GGA)的基础上,计算了正电子在金红石型Ti O2块材中不同缺陷处的湮没寿命.主要包括自由态正电子的湮没寿命,单空位和双空位处束缚态正电子的湮没寿命.并从理论上给出了含有空位缺陷时金红石型Ti O2的符合多普勒展宽能谱.     

Doppler程序对金红石型TiO2的空位缺陷研究

金红石型TiO2是一种非常好的稀磁半导体材料,其自身的本征缺陷与室温铁磁性起源密切相关。本文利用Doppler程序在广义梯度理论（GGA）的基础上,计算了正电子在金红石型TiO2块材中不同缺陷处的湮没寿命。主要包括自由态正电子的湮没寿命,单空位和双空位处束缚态正电子的湮没寿命。并从理论上给出了含有空位缺陷时金红石型TiO2的符合多普勒展宽能谱。     

Positron annihilation studies in ZnO nanoparticles

We report results on positron annihilation spectroscopic (PAS) studies using lifetime and coincidence Doppler broadening techniques in zinc oxide (ZnO) nanoparticles (4 to 40 nm) synthesized by solid state pyrolytic reaction followed by annealing in the temperature range of 200 ^°C to 800 ^°C. Positron lifetime in the nanoparticles are observed to be higher than bulk lifetime in all the cases. Theoretical calculation of lifetime indicates the presence of either Zn or (Zn, O) vacancy clusters which migrate and anneal out at high temperature. Comparison of ratio spectra from coincidence Doppler broadening measurement and calculated electron momentum distribution indicates the presence of either Zn or (Zn, O) vacancies. In addition, photoluminescence (PL) measurements have been carried out to examine the role of defects on the intensity of emission in the visible region.     

He离子注入ZnO中缺陷形成的慢正电子束研究

在ZnO单晶样品中注入了能量为20—100keV、总剂量为4.4×10¹⁵cm^-2的He离子.利用基于慢正电子束的多普勒展宽测量研究了离子注入产生的缺陷.结果表明，He离子注入ZnO产生了双空位或更大的空位团.在400℃以下退火后，He开始填充到这些空位团里面，造成空位团的有效体积减少.经过400℃以上升温退火后，这些空位团的尺寸开始增大，但由于有少量的He仍然占据在空位团内，因此直到800℃这些空位团仍保持稳定.高于800℃退火后，由于He的脱附，留下的空位团 关键词： 慢正电子束 ZnO 离子注入 缺陷     

Study of vacancy defects and their thermal stability in MeV Fe ion irradiated RAFM steel using positron beam Doppler broadening spectroscopy

Indian reduced activation ferritic-martensitic steel was irradiated with 1.1?MeV Fe ions to various doses from 1 to100?dpa at room temperature. The depth profiling of irradiation-induced vacancy-type defects and the defect-recovery under post-irradiation annealing was studied using variable low-energy positron beam Doppler broadening spectroscopy. The influence of irradiation-induced defects on the microstructural properties was studied by glancing incidence x-ray diffraction (GIXRD) and nanoindentation technique. Positron annihilation study showed the signatures of reduced vacancy concentration at the peak damage region due to injected interstitial effect from 30 to 100?dpa and the widening of vacancy-interstitial recombination-rich region towards the end of ion range with the increase in dose. The GIXRD results were analysed by modified Williamson–Hall plot method, and the variation of coherent domain size and micro-strain with irradiation dose was studied. Irradiation-induced hardening was observed in the nanoindentation study. The features observed in the GIXRD and nanoindentation study are correlated with the depth-resolved defect distribution observed in the positron annihilation study.     

质子辐照ZnO白漆光学退化的慢正电子湮没分析

 采用慢正电子湮没光谱研究低能质子辐照下ZnO白漆的光学退化。研究结果表明,随质子辐照注量的增加, 多普勒展宽谱的S参数逐渐减小,W参数逐渐增大。质子辐照下S-W参数拟合曲线的斜率发生改变。S参数的减小可以归结为锌空位含量的减少以及准正电子素的形成。准正电子素{单电离氧空位（捕获一个电子）+正电子}的形成,能够降低正电子湮没的速率,导致S参数减小。S参数的减小证实了质子辐照导致ZnO白漆中单电离氧空位数量的增加。S-W参数拟合曲线斜率的变化可以归结于质子辐照下双电离氧空位向单电离氧空位的转变。     

氘化对KH2PO4晶体微观缺陷影响的正电子湮没研究

采用传统降温法从不同程度氘化(x=0, 0.51, 0.85)的生长溶液中生长氘化KH₂PO₄(KDP) 晶体, 利用正电子湮没技术(正电子寿命谱和多普勒展宽谱)、结合X射线衍射谱(XRD) 结构分析, 对KDP晶体氘化生长的微观缺陷进行了研究, 讨论了氘化程度对晶体内部微观结构特性、缺陷类型和浓度的影响. XRD结果显示晶胞参数a, b值随氘含量的增加而增加, c值无明显变化; 正电子寿命谱结果发现随着氘化浓度的提高, KDP晶体内部中性填隙缺陷以及氧缺陷不断增加, 引起晶体晶格畸变; 氢空位、K空位、杂质替位缺陷不断发生缔合反应形成复合缺陷, 缺陷浓度不断减少; 团簇、微空洞等大尺寸缺陷也在不断发生聚合反应, 缺陷浓度表现为不断减少. 多普勒实验结果表明随着氘化程度的提升, 晶体内部各类缺陷表现为同步变化. 实验结果表明, KDP晶体在低浓度氘化生长(50%以内)下缺陷反应较弱, 而在高浓度氘化(50%以上)下的缺陷反应显著增强.     

Annealing studies of Ti/Al multilayer film by slow positron beam

Single detector and coincidence Doppler broadening (CDB) spectroscopy measurements using slow positron beam were carried out to study as-deposited and annealed Ti/Al multilayer films. The changes of the film structure and defects in each layer by heat treatment have been investigated through the analysis of Doppler broadening lineshape variation. The coincidence Doppler broadening measurements revealed that Ti is the dominant diffusion species during the alloying process of Ti/Al by high temperature annealing. These results highlight the potential of slow positron beam in characterizing the vacancy-type defects evolution and mechanism of interlayer diffusion in Ti/Al multilayer film.     

高温氧气热处理对TiO_2晶体结构和铁磁性的影响

金红石TiO_2晶体先在真空中进行退火处理,随后在1173 K的氧气中进行不同时间(2 h、5 h、8 h)的热处理.理论上,通过Doppler程序计算了晶体中存在单空位、双空位和间隙O原子时的正电子湮没寿命.实验上,利用正电子湮没寿命谱仪、符合多普勒能谱仪和超导量子干涉仪分别表征了氧气退火后晶体内部的缺陷结构和常温铁磁性.分析结果得出:真空退火晶体的常温铁磁性主要与O空位的存在相关联;而经过氧气退火后,虽然极大地减少了氧空位,但晶体中却产生了大量的Ti双空位,这使得晶体的常温铁磁性有所增加.     

Positron annihilation studies of vacancy-type defects

The annihilation radiation of low energy positrons gives information on the electronic and defect structure of solids. There are three conventionally measurable quantities: the positron lifetime, the angular correlation of 2 annihilation radiation and the Doppler-broadened annihilation line shape. In the presence of lattice defects the annihilation characteristics show considerable changes. This is due to positron trapping at defects like vacancies and their agglomerates, voids, dislocations and grain boundaries. The concentration of defects can be deduced from the ratio of trapped and free positrons.The annihilation characteristics are different for different defect configurations. Positrons reveal vacancy agglomeration and the lifetime of trapped positrons gives estimates on the size of microvoids in the range of 2–10 Å. Various examples on the study of equilibrium and non-equilibrium defects, radiation damage and defect annealing are presented. Special emphasis is given to vacancy recovery and vacancy-impurity interactions in electron and neutron irradiated bcc transition metals like Fe, Mo, Nb, Ta.     

Study of the effect of annealing on defects in Fe-Mn-Si-Cr-Ni-C alloy by slow positron beam

FeMnSi shape memory alloys (SMAs) have received much attention as one-way SMAs due to their cost-effectiveness. Variable-energy (0-30 keV) positron beam studies have been carried out on a Fe-Mn-Si-Cr-Ni-C alloy with different degrees of deformation. Doppler broadening profiles of the positron annihilation as a function of incident positron energy were shown to be quite sensitive to defects introduced by deformation. The variation of the nature and the concentration of defects are studied as a function of isochronal annealing temperature. These results are correlated with the data measured with the positron annihilation lifetime spectroscopy (PALS). The positron annihilation results are compared to XRD and optical microscopy (OM).     

Design of a new type positron beam system

A new type positron beam system is being constructed in Wuhan university. The goal of this project is to build a positron beam which can measure positron lifetimes and has high moderation efficiency. The system utilizes a magnetically guided incident positron beam and the sample is biased to a high negative potential to achieve the desired implantation energies. A conventional tungsten moderator is replaced by a solid Ne moderator with high moderation efficiency (about 1%). A multi-functional target chamber for slow beam studies is designed, which can be used for positron annihilation lifetime spectroscopy (PALS), Doppler broadening (DB) and coincidence Doppler broadening (CDB) measurements.     

Doppler broadening of positron annihilation photons in metals

The Doppler broadening of positron annihilation photons was measured in 17 metals. A model which considers the positron lifetime spectra in metals to be composed of terms for annihilation with conduction and core electrons and surface centers of low electron momentum is used to correlate calculated core annihilation rates with the Doppler lineshape. Ta metal was doped with defects with high energy implantations of¹⁴N⁺⁴ ions at variable doses. Differences in the Doppler linewidths were ascribed as being principally a reflection of the probabilty of annihilation with core electrons relative to annihilation with conduction electrons.