Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈1 1 1〉

This study investigated the dependence of surface blistering and exfoliation phenomena on post-annealing time in H⁺-implanted Si〈1 1 1〉. Czochralski-grown n-type Si〈1 1 1〉 wafers were room-temperature ion-implanted with 40 keV hydrogen monomers to a fluence of 5×10¹⁶ cm⁻², and followed by furnace annealing treatments at 400 and 500 °C for various durations ranging from 0.25 to 3 h. The corresponding analysis results for Si〈1 0 0〉 [1] (Liang et al., 2008); [2] (Bai, 2007) were adopted in order to make comparisons. The evolution of blister formation and growth for Si〈1 1 1〉 at 400 °C has a shorter characteristic time compared to Si〈1 0 0〉. However, there is a longer characteristic time when annealing takes place at 500 °C. In addition, no craters were observed for Si〈1 1 1〉 annealed at 400 °C while the opposite is true for Si〈1 0 0〉. The evolution of crater development for Si〈1 1 1〉 annealed at 500 °C has a longer characteristic time compared to Si〈1 0 0〉. These results are attributed to the fact that compared to Si〈1 0 0〉, Si〈1 1 1〉 has a smaller surface binding energy of silicon atoms and a larger areal number density of silicon atoms on the plane perpendicular to the incident-ion axis. Furthermore, Si〈1 1 1〉 has a greater areal number density, smaller diameter, and a similar covered-area fraction of optically-detectable blisters compared to Si〈1 0 0〉. However, Si〈1 1 1〉 has a lower areal number density and a smaller covered-area fraction of craters than does Si〈1 0 0〉. Increasing post-annealing temperature from low (e.g. 400 °C) to high (e.g. 500 °C) revealed that Si〈1 1 1〉 tends to create more blisters while Si〈1 0 0〉 tends to develop larger blisters as well as create more craters.     

Impact of O2 exposure on surface crystallinity of clean and Ba terminated Ge(1 0 0) surfaces

In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO₂ of 10⁻² Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O₂ exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.     

STM observation of initial growth of Sn atoms on Ge(0 0 1) surface

We have studied initial growth of Sn atoms on Ge(0 0 1) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(0 0 1) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the 〈3 1 0〉 and the 〈1 1 0〉 directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the 〈3 1 0〉 direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(0 0 1) and Si(0 0 1) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface strain.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

An effective wet cleaning process, optimized for low temperature Ge epitaxial growth on thin Ge or SiGe structures with reduced surface roughening, is proposed. It is found that HF + HCl cleaning is the most effective wet cleaning method that is applicable to the low temperature thermal cleaning. It is also found that temperature of the thermal cleaning appropriate to 25-30 nm thick germanium on insulator (GOI) or silicon-germanium on insulator (SGOI) substrates is approximately 450 °C. Moreover, it is also found that the temperatures of Ge epitaxial growth even in lattice-matched systems must be reduced to around 400 °C to prevent surface roughening and those in lattice-mismatched systems also must be reduced sufficiently (300 °C for strained Ge growth on SGOI (X_eff = 0.6)) to prevent lattice relaxation as well as surface roughening. Finally, the successful formation of the compressively strained GOI structures is demonstrated by applying these wet cleaning and low temperature thermal cleaning processes and low temperature Ge epitaxy to thin SGOI substrates.     

Texture, microstructure and magnetic properties of Fe-28Cr-15Co-3.5Mo permanent magnet

Crystallographic texture, microstructure and magnetic properties of Fe-28Cr-15Co-3.5Mo alloy were studied as a function of processing parameters. Texture studies revealed that thermo-magnetic aging leads to the development of ideal Goss type, {1 1 0} 〈0 0 1〉 and cube type {0 0 1} 〈0 1 0〉 textures. The orientation densities of these texture components become stronger after the step-aging treatments. Microstructural features show that improvement in magnetic properties were due to aligning and elongation of ferromagnetic Fe, Co-rich (α₁) particles in the preferred 〈1 0 0〉 directions. Magnetic analysis reveals that magnetic properties of the alloys are directionally dependent and influenced by the choice of thermo-magnetic treatment temperature or time. The maximum values of intrinsic coercive force, remanence and energy product, obtained in the textured magnetic alloy were 68.99 kA/m (867 Oe), 1.12 T (11.2 kG) and 43.2 kJ m³ (5.4 MG Oe), respectively.     

Microstructure and texture evolution of strip casting 3 wt% Si non-oriented silicon steel with columnar structure

An Fe-3 wt%Si strip with columnar structure and pronounced {0 0 1}〈0 v w〉 texture was produced using a twin-roll strip caster. Then the as-cast strip was cold-rolled and annealed. The microstructure and texture evolution along the processing steps was investigated. It is found that inhomogeneous microstructure is produced in both cold-rolled and final annealed samples due to the large initial grains. The cold rolling texture is dominated by pronounced a-fiber texture and relatively strong γ-fiber texture. The final recrystallization texture is characterized by {0 0 1}〈0 1 0〉, {0 0 1}〈2 1 0〉, {1 1 0}〈0 0 1〉 texture and a slightly shifted {1 1 1}〈1 1 2〉 component. The microstructural inhomogeneity plays an important role in the texture evolution.     

MeV-ion axial surface-channeling from an electron irradiated KCl(0 0 1) surface

Surface-channeling of protons incident with 5 mrad on an electron-irradiated surface is investigated using a 0.55 MeV beam of protons. The target surface is KCl(0 0 1), which is damaged by electron-stimulated desorption with 5 keV electron irradiation. The direction of the incident beam is adjusted along the 〈1 0 0〉 and 〈1 1 0〉 channeling conditions and the channeling-dips of the scattering yields are observed. The irradiation dose-dependence of the minimum yields and widths of the dips is measured. Two dips are compared, i.e., for the 〈1 0 0〉 and 〈1 1 0〉 channelings. By increasing the irradiation dose up to 2 × 10¹⁶ cm⁻², the dip around the 〈1 0 0〉 axis becomes opened, but that of the 〈1 1 0〉 axis becomes shallow. The irradiated surfaces are observed to have many overlapped terraces of sub-micron with monolayer steps. The surface morphology deformed by the irradiation effects to truncate trajectories of the 〈1 0 0〉 channeling protons. This roughness of the surface is more effective for the trajectories of the 〈1 1 0〉 channeling protons. The protons incident on the rough surface along the 〈1 1 0〉 axis are not reflected from the atomic row but reflected by a potential of the surface with steps. Results by a simple computer simulation of the trajectories of protons at stepped surfaces also indicate the scattering processes.     

Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Ge thin films with a thickness of about 110 nm have been deposited by electron beam evaporation of 99.999% pure Ge powder and annealed in air at 100-500 °C for 2 h. Their optical, electrical and structural properties were studied as a function of annealing temperature. The films are amorphous below an annealing temperature of 400 °C as confirmed by XRD, FESEM and AFM. The films annealed at 400 and 450 °C exhibit X-ray diffraction pattern of Ge with cubic-F structure. The Raman spectrum of the as-deposited film exhibits peak at 298 cm⁻¹, which is left-shifted as compared to that for bulk Ge (i.e. 302 cm⁻¹), indicating nanostructure and quantum confinement in the as-deposited film. The Raman peak shifts further towards lower wavenumbers with annealing temperature. Optical band gap energy of amorphous Ge films changes from 1.1 eV with a substantial increase to ∼1.35 eV on crystallization at 400 and 450 °C and with an abrupt rise to 4.14 eV due to oxidation. The oxidation of Ge has been confirmed by FTIR analysis. The quantum confinement effects cause tailoring of optical band gap energy of Ge thin films making them better absorber of photons for their applications in photo-detectors and solar cells. XRD, FESEM and AFM suggest that the deposited Ge films are composed of nanoparticles in the range of 8-20 nm. The initial surface RMS roughness measured with AFM is 9.56 nm which rises to 12.25 nm with the increase of annealing temperature in the amorphous phase, but reduces to 6.57 nm due to orderedness of the atoms at the surface when crystallization takes place. Electrical resistivity measured as a function of annealing temperature is found to reduce from 460 to 240 Ω-cm in the amorphous phase but drops suddenly to 250 Ω-cm with crystallization at 450 °C. The film shows a steep rise in resistivity to about 22.7 KΩ-cm at 500 °C due to oxidation. RMS roughness and resistivity show almost opposite trends with annealing in the amorphous phase.     

Investigation of helium implantation induced blistering in InP

 Four-inch InP wafers were implanted with 100 keV helium ions with a dose of 5×10¹⁶ cm⁻² and subsequently annealed in air in the temperature range of 225-400°C in order to determine the blistering kinetics of these wafers. An Arrhenius plot of the blistering time as a function of reciprocal temperature revealed two different activation energies for the formation of surface blisters in InP. The activation energy was found to be 0.30 eV in the higher temperature regime of 300-400 °C and 0.74 eV in the lower temperature regime of 225-300 °C. The implantation induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 400-700 nm from the surface of InP. The damage band was found to be decorated with a large number of nanovoids having diameters between 2 and 5 nm. These nanovoids served as precursors for the formation of microcracks inside InP upon annealing, which led to the formation of surface blisters.     

Angular distributions of atoms sputtered from NiAl{1 1 0} and Ni{1 0 0}

Using the laser post-ionization surface analysis technique, I have for the first time studied angular distributions of Ni and Al atoms sputtered from NiAl{1 1 0}. Emission angular distributions from Ni{1 0 0} have also been measured. I have observed preferential emissions of Ni and Al atoms along 〈1 1 1〉 and 〈1 0 0〉crystallographic directions for NiAl{1 1 0} and of Ni atoms along 〈1 1 0〉 and 〈1 0 0〉 directions for Ni{1 0 0}. The observed preferential ejections can be explained in terms of the theory of focusing-collision sequences. Because of the difference in surface binding energy between Al and Ni atoms, preferential ejection angles of Ni atoms are slightly different from those of Al atoms along the 〈1 1 1〉 ejections. For NiAl, the 〈1 1 1〉 preferential ejections were less prominent than the 〈1 0 0〉 preferential ejections and this can be related to the low efficiency of momentum transfer in Ni-Al collision sequences along 〈1 1 1〉 lattice directions. The low efficiency of momentum transfer due to the mass mismatch can also be responsible for the experimental observation that the preferential ejections in the alloy were less prominent than those in the Ni metal.     

Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(0 0 1) substrate

High density and ultrasmall size of Ge quantum dots (QDs) have been achieved directly on Si(0 0 1) (2 × 1) reconstruction surface. Their detailed morphology was observed by atomic force microscope (AFM) and shows that small pyramids, small domes, huts, and multi-headed large domes coexist in the film grown at 400 °C, while small domes and multi-headed large domes formed at 450 °C. Their low temperature photoluminescence (PL) showed that a very strong non-phonon (NP) peak with a large blue shift of 0.19 eV at 14 K, which can be attributed to their very high areal density, 5.2 × 10¹¹ cm⁻², and sub-10-nm mean size, 7.6 ± 2.3 nm.     

Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption

With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H-SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been prepared by standard surface preparation procedures. They are controlled by reflection high energy electron diffraction (RHEED), low energy electron diffraction and photoemission. One monolayer of Ge has been deposited similarly at room temperature on each of these three surfaces, followed by the same set of isochronal heatings at increasing temperatures up to complete Ge desorption. At each step of heating, the structural and chemical status of the Ge ad-layer has been probed. Marked differences between the Si- (3 × 3 and R3) and C-rich (6R3) terminations have been obtained. Ge wetting layers are only obtained up to 400 °C on 3 × 3 and R3 surfaces in the form of a 4 × 4 reconstruction. The wetting is more complete on the R3 surface, whose atomic structure is the closest to an ideally Si-terminated 1 × 1 SiC surface. At higher temperatures, the wetting layer stage transiets in Ge polycrystallites followed by the unexpected appearance on the 3 × 3 surface of a more ordered Si island structure. It denotes a Si clustering of the initial Si 3 × 3 excess, induced by the presence of Ge. A phase separation mechanism between Si and Ge prevails therefore over alloying by Ge supply onto a such Si-terminated 3 × 3 surface. Conversely, no wetting is obtained on the 6R3 surface and island formation of exclusively pure Ge takes place already at low temperature. These islands exhibit a better epitaxial relationship characterized by Ge(1 1 1)//SiC(0 0 0 1) and Ge〈1 1 −2〉//SiC〈1 −1 0 0〉, ascertained by a clear RHEED spot pattern. The absence of any Ge-C bond signature in the X-ray photoelectron spectroscopy Ge core lines indicates a dominant island nucleation on heterogeneous regions of the surface denuded by the 6R3 graphite pavings. Owing to the used annealing cycles, the deposited Ge amount desorbs on the three surfaces at differentiated temperatures ranging from 950 to 1200 °C. These differences probably reflect the varying morphologies formed at lower temperature on the different surfaces. Considering all these results, the use of imperfect 6R3 surfaces appears to be suited to promote the formation of pure and coherent Ge islands on SiC.     

Determination of the central density on the basis of its moments

The value of the central density is of key importance for annihilation processes. For the ground state we discuss its determination from the moments of the ground state density. We first review the way of reaching the moments from the spectrum. In particular we show how to get the lowest moments in D = 3, namely 〈r⁻²〉 and 〈r⁻¹〉 from the series expansion of the Laplace transform of the density. We then recall a method to obtain the central density based on the Stieltjes moment problem. If the number of known moments is finite, this technique yields a lower bound. We investigate the possibilities to estimate the accuracy of the bound and the corresponding asymptotic value. An application to the muonic ²⁰⁸Pb atom is presented.     

A theoretical study of Ge adsorption on Si(0 0 1) covered with Bi nanolines

The energetic stability and the equilibrium geometry of Ge adsorption on the Si(0 0 1) surface covered with Bi nanolines were examined by ab initio total energy calculations. We find that there is an energetic preference of Ge atoms lying on the Si(0 0 1) terraces, forming Si^down-Ge^up mixed dimers. Further investigations reveal a repulsive interaction between the mixed dimers and the Bi nanolines, suggesting that the formation of Si^down-Ge^up dimers can be tailored by the presence of the Bi nanolines.     

Kinetics of residual gas adsorption on Ge(1 1 1) surface in low-energy electron backscattering

Low-energy (0.4-1.2 eV) electron backscattering is applied for the investigation of kinetics of residual gas adsorption effect on the concentration and energy positions of surface electron states of Ge(1 1 1) surface. Chemosorption of residual gas molecules on Ge(1 1 1) at P ∼ 10⁻⁷ Pa and room temperature is shown to be most active during the first 48 h. Low concentration of dangling valence bonds on the reconstructed Ge(1 1 1) (2 × 8) surface is shown to determine its low activity to chemosorption.     

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF₂/Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF₂ film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF_x complexes which desorb at these temperatures.     

DFT study on dissociative adsorption of SiH4 and GeH4 on SiGe(1 0 0)-2 × 1 surface

SiH₄ and GeH₄ dissociative adsorptions on a buckled SiGe(1 0 0)-2 × 1 surface have been analyzed using density functional theory (DFT) at the B3LYP level. The Ge alloying in the Si(1 0 0)-2 × 1 surface affects the dimer buckling and its surface reactivity. Systematic Ge influences on the reaction energetics are found in SiH₄ and GeH₄ reactions with four dimers of Si^∗-Si, Ge^∗-Si, Ge^∗-Ge, and Si^∗-Ge (∗ denotes the protruded atom). On a half H-covered surface, the energy barriers for silane and germane adsorption are higher than those on the pristine surface. The energy barrier for silane adsorption is higher than the corresponding barrier for germane adsorption. Rate constants are also calculated using the transition-state theory. We conclude that the SiGe surface reactivity in adsorption reaction depends on the Ge presence in dimer form. If the surface Ge is present in form of Ge^∗-Ge, the surface reactivity decreases as the Ge^∗-Ge content increases. If the surface Ge prefers to be in form of Ge^∗-Si at low Ge contents, the surface reactivity increases first, then decreases at high Ge surface contents when Ge^∗-Ge prevails. The calculated rate constant ratio of GeH₄ adsorption on Si^∗-Si over Ge^∗-Ge at 650 °C is 2.1, which agrees with the experimental ratio of GeH₄ adsorption probability on Si(1 0 0) over Si(1 0 0) covered by one monolayer Ge. The experimental ratio is 1.7 measured through supersonic molecular beam techniques. This consistency between calculation and experimental results supports that one monolayer of Ge on Si(1 0 0) exists in form of Ge^∗-Ge dimer.     

Preparation of non-oriented silicon steel with high magnetic induction using columnar grains

Columnar grains can lead to detrimental surface ridging and an inhomogeneous microstructure, although their {1 0 0}〈0 v w〉 texture is considered desirable due to their good magnetic properties in non-oriented silicon steel. Based on the hereditary tendency of {1 0 0}〈0 v w〉 texture, the effects of lubrication and heating rate on texture and on final magnetic properties were investigated using a cast slab containing 100% columnar grains. Hot rolling with lubrication, normalization at low heating rate, two-stage cold rolling, and final annealing at 1000 °C helped achieve high performance. As a result, a new non-oriented silicon steel with high magnetic induction (B₅₀=1.82 T) and low core loss (P_1.5=2.35 W/kg) was prepared. The possibility of further performance optimization was also discussed.     

The dissociative adsorption of borane on the Ge(1 0 0)-2 × 1 surface: A density functional theory study

By means of cluster models coupled with density functional theory, we have studied the hydroboration of the Ge(1 0 0)-2 × 1 surface with BH₃. It was found that the Ge(1 0 0) surface exhibits rather different surface reactivity toward the dissociative adsorption of BH₃ compared to the C(1 0 0) and Si(1 0 0) surfaces. The strong interaction still exists between the as-formed BH₂ and H adspeices although the dissociative adsorption of BH₃ on the Ge(1 0 0) surface occurs readily, which is in distinct contrast to that on the C(1 0 0) and Si(1 0 0) surfaces. This can be understood by the electrophilic nature of the down Ge atom, which makes it unfavourable to form a GeH bond with the dissociating proton-like hydrogen. Alternatively, it can be attributed to the weak proton affinity of the Ge(1 0 0) surface. Nevertheless, the overall dissociative adsorption of BH₃ on group IV semiconductor surfaces is favourable both thermodynamically and kinetically, suggesting the interesting analogy and similar diversity chemistry of solid surface in the same group.