Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction

Rutherford backscattering/channeling spectrometry and synchrotron X-ray diffraction are employed to characterize the structural properties of the InAsPSb epilayer grown on the InAs substrate. The results indicate that a 975-nm thick InAs_0.668P_0.219Sb_0.113 layer has a quite good crystalline quality (χ_min=6.1%). The channeling angular scan around an off-normal 〈1 1 1〉 axis in the (0 1? 1) plane of the sample is used to determine the tetragonal distortion e_T, which is caused by elastic strain in the layer. The results show that the InAsPSb layer is subjected to an elastic strain at the interfacial layer, and the strain decreases gradually moving towards the near-surface layer. It is expected that an epitaxial InAsPSb layer with the thickness of around 1700 nm will be fully relaxed (e_T=0). The magnitude difference of e_T deduced from angular scans and X-ray diffraction implies some structure (like dislocations) may play a role.     

Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AIN interlayer by Rutherford backscattering/channeling

An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.     

Characterization of tetragonal distortion in a thick Al_(0.2)Ga_(0.8)N epilayer with an AlN interlayer by Rutherford backscattering/channeling

An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire(0001) substrate with a thick(> 1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering(RBS). Using the channeling scan around an off-normal [1213] axis in the(1010) plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eTin the high-quality Al0.2Ga0.8N layer is dramatically released by the AlN interlayer from 0.66% to 0.27%.     

Interface defects in GaN/sapphire studied using Rutherford backscattering spectroscopy and channeling

GaN on sapphire was grown by MOCVD technique. Rutherford backscattering spectra together with channeling along [0 0 0 1] axis were recorded to study the defects at the interface. Detailed calculation shows that the defects at GaN/sapphire interface are due to dislocations which are distributed into the whole thickness of the film and are mainly aligned on the growth direction.     

Investigations on the oxidation of zirconium nitride films in air by nuclear reaction analysis and backscattering spectrometry

The thermal oxidation of dc magnetron sputter deposited thin ZrN films in air in the temperature range of 100-475 °C has been studied by depth profiling N using nuclear reaction analysis (NRA) involving ¹⁵N(¹H,αγ)¹²C resonance reaction and O using 3.05 MeV ¹⁶O(α,α)¹⁶O resonant scattering. The structural and morphological changes accompanying the process have also been investigated. NRA/backscattering spectrometry measurements show that oxidation results in the formation of ZrO_1.8±0.1 at the surface. An interface consisting of Zr, O and N is also formed underneath the surface oxide. For an isothermal annealing, oxide layer as well as interface exhibits parabolic growth with the duration of annealing. The diffusion of oxygen through the already grown oxide layer (D = 5.6 × 10⁻¹⁴ cm² s⁻¹ at 475 °C) forms the rate-controlling step of oxidation. The diffusion may be facilitated by the high concentration of oxygen vacancies in the oxide layer. Glancing incidence X-ray diffraction (GIXRD) measurements indicate that zirconia films formed are phase-singular (monoclinic) and are textured in (2 0 0) and (3 1 1) orientations. Examination by scanning electron microscopy (SEM) reveals the formation of blisters on sample surfaces on prolonged oxidation. The blistering can be attributed to intrinsic growth stress arising due to the larger molar volume of zirconium oxide in comparison to zirconium nitride, a fact demonstrated by the depth profile measurements as well.     

Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon

The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered He⁺ ions increases as a result of irradiation (the long-range effect); in this case, the shape of the dependence of the effect size on the irradiation time is bell-like and agrees qualitatively with the results obtained by hardness measurements previously. These data show light generation of a high concentration of movable defects near the opposite plate side.     

Applications of high energy ion beam techniques in environmental science: Investigation associated with glass and ceramic waste forms

High energy ion beam capabilities including Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) have been very effectively used in environmental science to investigate the ion-exchange mechanisms in glass waste forms and the effects of irradiation in glass and ceramic waste forms in the past. In this study, RBS and NRA along with SIMNRA simulations were used to monitor the Na depletion and D and ¹⁸O uptake in alumina silicate glasses, respectively, after the glass coupons were exposed to aqueous solution. These results show that the formation of a reaction layer and an establishment of a region where diffusion limited ion exchange occur in these glasses during exposure to silica-saturated solutions. Different regions including reaction and diffusion regions were identified on the basis of the depth distributions of these elements. In the case of ceramics, damage accumulation was studied as a function of ion dose at different irradiation temperatures. A sigmoidal dependence of relative disorder on the ion dose was observed. The defect-dechanneling factors were calculated for two irradiated regions in SrTiO₃ using the critical angles determined from the angular yield curves. The dependence of defect-dechanneling parameter on the incident energy was investigated and it was observed that the generated defects are mostly interstitial atoms and amorphous clusters. Thermal recovery experiments were performed to study the damage recovery processes up to a maximum temperature of 870 K.     

Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

We report on a photoreflectance investigation in the 0.8-1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. We observed clear and well-resolved structures, which we attribute to the optical response of different QD families. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and discussed considering vertical coupling between dots of the same column. It is shown that Coulomb interaction can account for the observed optical response of QD families with different morphology coexisting in the same sample. Received 17 November 1999     

Structure distortion,optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl 3 to SbCl 3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550°C for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10 8 , 3.26×10 8 , 5.23×10 8 , and 6.97×10 8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.     

Study of Zn1−xCoxO (0.02≤x≤0.08) dilute magnetic semiconductor prepared by mechanosynthesis route

Single-phase Zn_1−xCo_xO (0.02≤x≤0.08) dilute magnetic semiconductor is prepared by mechanical milling process. The shift of XRD peaks towards the higher angle and a redshift in the band gap compared to the undoped ZnO ensure the incorporation of Co²⁺ ions in the semiconductor host lattice. Pure Zn_xCo_1−xO phases show the paramagnetic behavior in the temperature range 80 K≤T≤300 K. The room temperature volume magnetic susceptibility (χ_v) estimated in case of Zn_0.96Co_0.04O is ∼10⁻⁵ emu/Oe cm³. The temperature dependence of susceptibility χ_v can be fitted well with Curie law confirming the paramagnetic interaction. The observed crystal-field splitting of 3d levels of Co²⁺ ions inside Zn_1−xCo_xO has been successfully interpreted using Curie law.     

Hydrogen depassivation of the magnesium acceptor by beryllium in p-type GaN

Under nitrogen-rich growth conditions, the present ab initio study predicts that hydrogen passivation is more effective on the acceptor Be instead of Mg in a co-doped p-type GaN. The formation energy is 0.24 eV for (H-Be_Ga) complex, and 0.46 eV for (H-Mg_Ga) complex. Congruently, the binding energy is 1.40 eV for (H-Be_Ga), and 0.60 eV for (H-Mg_Ga). Owing to the lower binding energy, (H-Mg_Ga) is not thermally stable. As Be is incorporated in Mg-doped GaN, a (H-Mg_Ga) may release a H⁺ cation at relatively elevated temperatures. Consequently, the H⁺ diffuses swiftly away from a Mg⁻_Ga, across a barrier of 1.17 eV, towards a Be⁻_Ga and forms a stable (H-Be_Ga) with it. The activation of Mg acceptors can be thus facilitated. In this view, the process of hydrogen depassivation of the Mg acceptor by Be can convert the as-grown high-resistivity Mg-doped GaN into a p-conducting material, as observed in the experiments.     

Study of the symmetry of single-wall nanotubes by electron diffraction

Determining precisely the atomic structure of single-wall carbon nanotubes is essential since it tailors electronic properties of this new carbon material. Here, we present a quantitative electron diffraction study of electric-arc produced single-wall carbon nanotube bundles, combined with simulations based on the kinematic theory and with real-space images. We stress the importance of the twist of the bundle in the interpretation of our data and we analyze both packing lattice parameters and chirality distribution. We show that, within a given bundle, no chirality is favoured whereas SWNT diameters are almost uniform. Received 5 February 1999     

Study of the ferroelectric–paraelectric phase transition of NaH3(SeO3)2 single crystals by H and Na NMR

The ¹H and ²³Na spin–lattice and spin–spin relaxation times of NaH₃(SeO₃)₂ single crystals grown using the slow-evaporation method were measured as functions of temperature and frequency in the ferroelectric and paraelectric phases. The changes in the symmetry of the (SeO₃)²⁻ dimers as a result of the ferroelectric–paraelectric phase transition are associated with large changes in the spin–lattice and spin–spin relaxation times, and in the number of resonance lines. The large changes in the relaxation times at 195 K indicate that the H and Na ions are significantly affected by this transition. The change in the number of resonance lines for the ¹H and ²³Na nuclei means that the orientations of the (SeO₃)²⁻ dimers and the environments of the Na ions change at T_C. Therefore, the orientations of the (SeO₃)²⁻ dimers and the environments of the Na ions play important roles in the phase transitions. In conclusion, the ferroelectric–paraelectric phase transition of NaH₃(SeO₃)₂ is accompanied by changes in hydrogen-bond structure and distortions of the (SeO₃)²⁻ and Na⁺ ion lattices, which form a slightly distorted octahedron.     

基于傅里叶红外光谱的癸酸-棕榈酸/SiO_2相变储湿复合材料制备机理研究

根据前期在相变储湿复合材料制备方面取得的成果,以SiO_2为载体材料、癸酸-棕榈酸为相变材料,采用溶胶-凝胶法制备癸酸-棕榈酸/SiO_2相变储湿复合材料。采用傅里叶红外光谱仪对癸酸-棕榈酸/SiO_2相变储湿复合材料制备过程各阶段的合成物质进行测试,即相变材料制备阶段、SiO_2载体材料制备阶段和癸酸-棕榈酸/SiO_2相变储湿复合材料制备阶段。研究SiO_2基相变储湿复合材料制备过程中SiO_2网络结构形成机理、癸酸-棕榈酸嵌入方式、癸酸-棕榈酸与SiO_2嵌合机理,阐明溶胶-凝胶法制备癸酸-棕榈酸/SiO_2相变储湿复合材料的相关机理。同时采用X射线衍射仪和扫描电子显微镜对癸酸-棕榈酸/SiO_2相变储湿复合材料的物质组成和微观形貌进行测试,以佐证癸酸-棕榈酸/SiO_2相变储湿复合材料的制备机理。结果表明:通过Si—O—Si基团断裂与重组形成大量闭合孔或笼有效地将癸酸-棕榈酸包覆,从而制备形成癸酸-棕榈酸/SiO_2相变储湿复合材料;在癸酸-棕榈酸/SiO_2相变储湿复合材料制备过程中癸酸-棕榈酸与SiO_2仅仅为物理嵌合,未发生任何化学反应;癸酸-棕榈酸/SiO_2相变储湿复合材料中SiO_2形成大量闭合孔或笼,一部分用于包覆癸酸-棕榈酸,发挥相变调温性能,另一部分利用其网络空隙结构,发挥储湿调湿性能,从而达到同时调节室内温度和湿度的目的。     

Study on the phase transitions by nuclear magnetic resonance of α-type RbAl(SO4)2·12H2O and β-type CsAl(SO4)2·12H2O single crystals

The thermodynamic properties, spin–lattice relaxation times, T₁, and spin–spin relaxation times, T₂, of the ²⁷Al, ⁸⁷Rb, and ¹³³Cs nuclei in MAl(SO₄)₂·12H₂O (M=Rb and Cs) crystals were investigated, and the two crystals were found to lose H₂O with increases in temperature. From our results for T₁ and T₂, we conclude that the discontinuities near T_d in the T₁ curves of the two crystals correspond to structural changes. In both crystals, below T_d the water molecules surrounding the Al³⁺ and M⁺ nuclei form distorted octahedra, whereas above T_d the water molecules around the Al³⁺ and M⁺ nuclei form regular octahedra and the environment of the Al³⁺ and M⁺ nuclei has cubic symmetry. Further, the T₁ for the ²⁷Al and ⁸⁷Rb nuclei in RbAl(SO₄)₂·12H₂O below T_d were found to increase with increasing temperature, whereas the T₁ for the ²⁷Al and ¹³³Cs nuclei in CsAl(SO₄)₂·12H₂O were found to decrease. It is possible that this difference is due to the different characteristics of α- and β-type crystals.