Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.     

Effects of BaCu（B2Os） addition on sintering temperature and microwave dielectric properties of BasNb4O15-BaWO4 ceramics

The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.     

Growth of threaded AIN whiskers by a physical vapor transport method

Threaded aluminum nitride （A1N） whiskers are grown by a physical vapor transport method in a radio-frequency induction heating furnace. The resultant whiskers are characterized by X-ray diffraction, Raman scattering, scanning electron microscopy, transmission electron microscopy and photoluminescence. The analysis shows that the whiskers are single-crystalline, wurtzite AIN. The threaded A1N whiskers are 0.5 μm~100 μm in diameter and several millimeters in length in the fiber direction, and have lots of tiny sawteeth on the surface. The morphology of this threaded A1N whisker is beneficial for bonding when the whisker is used in composite. The growth of the whiskers is dominated by the vapor-solid （VS） mechanism, and the particular morphology might result from an oscillating condition produced in the radio-frequency induction heating furnace.     

Supersymmetric Sawada-Kotera-Ramani Equation： Bilinear Approach

In this paper, using the Hirota＇s bilineax method, we consider the N = 1 supersymmetric Sawada-Kotera- Ramani equation and obtain the Bazcklund transformation of it. Its one- and two-supersoliton solutions axe obtained and N-supersoliton solutions for N ≥ 3 are given under the condition kiξj = kjξi.     

Effect of high-temperature annealing on AIN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.     

Atomic NOON state generation in distant cavities by virtual excitations

A general scheme of generating NOON states of virtually-excited 2N atoms is proposed. The two cavities are fibre-connected with N atoms in each cavity. Although we focus on the case of N = 2, the system can be extended to a few atoms with N 〉2. It is found that all 2N atoms can be entangled in the form of NOON states if the atoms in the first cavity are initially in the excited states and atoms in the second cavity are all in the ground states. The feasibility of the scheme is carefully discussed, it shows that the NOON state with a few atoms can be generated with good fidelity and the scheme is feasible in experiment.     

Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application

In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

Transport properties of a binary mixture of CO2-N2 from the pair potential energy functions based on a semi-empirical inversion method

The potential energy snrface of a CO2-N2 mixture is determined by using an inversion method, together with a new collision integral correlation [J. Phys. Chem. R@ Data 19 1179 （1990）]. With the new invert potential, the transport properties of CO2-N2 mixture are presented in a temperature range front 273.15 K to 3273.15 K at low density by employing the Chapman-Enskog scheme and the Wang Chang-Uhlenbeck de Boer theory, consisting of a viscosity coefficient, a thermal conductivity coefficient, a binary diffusion coefficient, and a thermal diffusion factor. The accuracy of the predicted results is estimated to be 2% for viscosity, 5% for thermal conductivity, and 10% for binary diffusion coefficient.     

Theoretical Study on N = 126 Shell Evolution

The nuclei around magic number N = 126 are investigated in the deformed relativistic mean field （RMF） model with effective interactions TMA. We focus investigations on the N = 126 isotonic chain. The N = 126 shell evolution is studied by analyzing the variations of two-neutron （proton） separation energies, quadruple deformations, single particle levels etc. The good agreement of two-neutron separation energies between experimental data and calculated values is reached. The RMF theory predicts that the sizes of N = 126 shell become smaller and smaller with the increasing of proton number Z. However, the N = 126 shell exists in our calculated region all along. According to the calculated two-proton separation energies, the RMF theory suggests ^220Pu is a two-proton drip-line nucleus in the N = 126 isotonic chain.     

A theoretical study of the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110）

A multiple-scattering chtster method is employed to calculate the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110） and its monolayer. Two peaks and one weak resonance appear in both cases. The self- consistent field DV-Xa calculations of the peaks and resonance show that the physical origin of the pre-edge peak x is different from those of the main peak 1 and the other weak resonance al. This setup is intrinsic to the N20 monolayer, owing to the interaction between the neighbouring molecular chains in the monolayer and partly to the adsorbed atomic oxygen, according to both the theoretical and experimental data.     

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO？ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain （FDTD） method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.     

Evolution of nitrogen structure in N-doped diamond crystal after high pressure and high temperature annealing treatment

In this paper, we have reported an investigation on the evolution of nitrogen structures in diamond crystals which contain nitrogen donor atoms in the range of 1500 ppm-1600 ppm following an annealing treatment at a high pressure of about 6.5 GPa and high temperatures of 1920 K-2120 K. The annealing treatment was found to completely transform nitrogen atoms originally arranged in a single substitutional form （C-center）, into a pair form （A-center）, indicated from infrared （IR） spectra. The photoluminescence （PL） spectra revealed that a small fraction of nitrogen atoms remained in C-center form, while some nitrogen atoms in A-center form were further transformed into N3 and H3 center structures. In addition, PL spectra have revealed the existence of two newly observed nitrogen-related structures with zero phonon lines at 611 nm and 711 nm. All these findings above are very helpful in understanding the formation mechanism of natural diamond stones of the Ia-type, which contains nitrogen atoms in an aggregated form.     

Effects of N/Z on Spin Distribution of Evaporation Residue Cross Section as a Probe of Nuclear Dissipation

The spin distribution of the evaporation residue cross section of nuclei ^194pb, ^200Pb, ^206Pb, and ^200 Os are calculated via a Langevin equation coupled with a statistical decay model. It is shown that with increasing the neutronto-proton ratio （N/Z） of the system, the sensitivity of the significantly. Moreover, for ^200Os this spin distribution is no spin distribution to the nuclear dissipation is decreased longer sensitive to the nuclear dissipation. These results suggest that to obtain a more accurate pre-saddle viscosity coefficient through the measurement of the evaporation residue spin distribution, it is best to yield those compound systems with low N/Z.     

Measurement of the total reaction cross section for the mirror nuclei ^12N and ^12B

The mirror nuclei ^12N and ^12B are separated by the Radioactive Ion Beam Line in Lanzhou （RIBLL） at HIRFL from the breakup of 78.6 MeV/u 14N on a Be target. The total reaction cross-sections of ^12N at 34.9 MeV/u and ^12B at 54.4 MeV/u on a Si target have been measured by using the transmission method. Assuming ^12N consists of a ^11C core plus one halo proton, the excitation function of ^12N and ^12B on a Si target and a C target were calculated with the Glanber model. It can fit the experimental data very well. The characteristic halo structure for ^12N was found with a large diffusion of the protons density distribution.     

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward 1-V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations.     

Partial wave analysis ofJ/ψ）→ppπ0 and measurement of J/ψ→ppη,ppη＇

Based on 58 million J/ψ data collected with the BESII detector at the BEPC, Partial Wave Analysis（PWA） is performed on J/ψ→ppπ0. The new excited baryon N（2065） is confirmed. Clear signals for other N＊ states are observed and the corresponding masses, widths and spin-parity are also measured. Processes such as J/ψ→ppη,ppη＇
are also studied and the branching ratios are measured.     

Role of N/Z in Pre-scission Neutrons as an Observable of Nuclear Friction

A dynamical Langevin model is employed to evaluate the excess of the neutron emission in the fission of heavy nuclei ^240Cf, ^246 Cf, ^254Cf, ^240U relative to the standard statistical-model prediction at various saddle-to-scission friction strengths. It is shown that when the neutron-to-proton ratio N/Z of the system increases, the sensitivity of the excess to the friction decreases substantially, and it almost disappears for ^240U. We suggest that using those compound systems with low N/Z favors an accurate determination for the saddle-to-scission friction strength based on the measurement of the pre-scission neutron multiplicity.     

Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on A1N/GaN and A1GaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an A1GaN/GaN diode by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostrncture results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an A1GaN/GaN diode.     

Effects of N/Z on Post-Saddle γ Emission as an Observable of Post-Saddle Nuclear Friction

Based on a dynamical Langevin equation coupled with a statistical decay model, we calculate the variation of the post-saddle giant dipole resonance （GDR） q-ray multiplicity of the heavy nuclei 24^240Cf, ^246Cf, ^252Cf and ^240U with the post-saddle friction strength （13）. We find that the sensitivity of the post-saddle γ emission to β decreases considerably with increasing the neutron-to-proton ratio （N/Z） of the system. Moreover, for 240 U, the γ emission is no longer sensitive to 13. We suggest that to accurately obtain information of the post-saddle friction strength by measuring pre-scission GDR γ-ray multiplicities, it is optimal to choose among the various compound systems those with low N/Z.