Characterisation of the plasma density with two artificial neural network models

This paper establishes two artificial neural network models by using a multi layer perceptron algorithm and radial based function algorithm in order to predict the plasma density in a plasma system.In this model,the input layer is composed of five neurons:the radial position,the axial position,the gas pressure,the microwave power and the magnet coil current.The output layer is the target output neuron:the plasma density.The accuracy of prediction is tested with the experimental data obtained by the Langmuir probe.The effectiveness of two artificial neural network models are demonstrated,the results show good agreements with corresponding experimental data.The ability of the artificial neural network model to predict the plasma density accurately in an electron cyclotron resonance-plasma enhanced chemical vapour deposition system can be concluded,and the radial based function is more suitable than the multi layer perceptron in this work.     

Prediction of the plasma distribution using artificial neural network

In this work,an artificial neural network (ANN) model is established using a back-propagation training algorithm in order to predict the plasma spatial distribution in an electron cyclotron resonance (ECR)—plasma-enhanced chemical vapor deposition (PECVD) plasma system. In our model, there are three layers:the input layer, the hidden layer and the output layer. The input layer is composed of five neurons: the radial position, the axial position, the gas pressure, the microwave power and the magnet coil current. The output layer is our target output neuron: the plasma density. The accuracy of our prediction is tested with the experimental data obtained by a Langmuir probe, and ANN results show a good agreement with the experimental data. It is concluded that ANN is a useful tool in dealing with some nonlinear problems of the plasma spatial distribution.     

电荷收集法测量低温等离子体密度

利用电荷收集法,在正(135 V)、负(-117 V)偏置和低真空背景(0.5 Pa)三种不同收集条件下,测量了用于等离子体断路开关的电缆等离子体枪产生的低温等离子体的密度和漂移速率,测量值分别为8.3×1014,1.2×1015,4.8×1014 cm-3;2.5,2.0 cm·μs-1。测量结果表明：三种收集条件下测得的等离子体漂移速率相近;在相同测量点处,负偏置收集条件下测得的等离子体密度大于正偏置和低真空背景收集条件下的测量值,而低真空背景收集条件下的测量值最小。     

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使用人工神经网络(ANN)对HL-2A装置破裂放电进行了离线预测研究。采用了两种方法训练网络,一种方法是采用原始实验数据作为网络输入训练网络,另一种是把训练样本中的Mirnov原始实验信号进行预处理,目的是突出Mirnov原始信号隐含的破裂信息。比较这两种方法,结果表明第二种方法获得的网络对破裂放电能够做出更加准确的预测。     

用人工神经网络预测HL-2A等离子体放电破裂

使用人工神经网络(ANN)对HL-2A装置破裂放电进行了离线预测研究。采用了两种方法训练网络,一种方法是采用原始实验数据作为网络输入训练网络,另一种是把训练样本中的Mirnov原始实验信号进行预处理,目的是突出Mirnov原始信号隐含的破裂信息。比较这两种方法,结果表明第二种方法获得的网络对破裂放电能够做出更加准确的预测。     

电荷收集法测量低温等离子体密度

利用电荷收集法,在正(135 V)、负(-117 V)偏置和低真空背景(0.5 Pa)三种不同收集条件下,测量了用于等离子体断路开关的电缆等离子体枪产生的低温等离子体的密度和漂移速率,测量值分别为8.3×1014,1.2×1015,4.8×1014 cm-3;2.5,2.0 cm·μs-1。测量结果表明:三种收集条件下测得的等离子体漂移速率相近;在相同测量点处,负偏置收集条件下测得的等离子体密度大于正偏置和低真空背景收集条件下的测量值,而低真空背景收集条件下的测量值最小。     

高密度氩等离子体电子密度的计算

用屏蔽氢离子模型计算了冲击压缩产生的温度T～2.0eV、密度ρ～0.01g/cm3～0.49g/cm3范围内氩等离子体的电子密度,探讨了不同温度、密度范围内的高密度氩等离子体中粒子之间相互作用对电子密度的影响.     

Al激光等离子体电子密度的空间分辨诊断

 采用20 μm的狭缝配平面晶体谱仪构成空间分辨光谱测量系统,对Al激光等离子体的K壳层发射谱进行测量。利用Al的Ly-α线谱的翼部Stark展宽效应推得电子密度空间分布轮廓,建立了翼部Stark展宽法测量高密度等离子体电子密度的诊断技术。     

有限磁场作用下填充环形等离子体波导中功率流密度的计算

在考虑有限磁场的作用下,得到了填充等离子体的圆柱光滑波导中各场分量的表达式,然后导出了功率流密度的计算式。通过计算得出等离子体的密度和厚度对功率流密度有极大的影响,并分析了其机理。     

Al激光等离子体电子密度的空间分辨诊断

采用20 μm的狭缝配平面晶体谱仪构成空间分辨光谱测量系统,对Al激光等离子体的K壳层发射谱进行测量。利用Al的Ly-α线谱的翼部Stark展宽效应推得电子密度空间分布轮廓,建立了翼部Stark展宽法测量高密度等离子体电子密度的诊断技术。     

用激光干涉法诊断准分子激光在YBa_2Cu_3O_(7-δ)靶面激励等离子体的电子密度

利用激光标准干涉法诊断了准分子激光(XeCl,308 nm)在YBa_2Cu_3O_(7-σ)超导靶面激励等离子体的电子密度.结果表明在入射激光功率密度为3×10~8W/cm~2,本底真空度为1.33～13.3 Pa的条件下,等离子体电子密度为10~(16)～10~(17)/cm~3.     

等离子体中X射线激光传输与电子密度诊断的理论及数值比较

通过数值模拟描述X射线激光在等离子体介质中传输的傍轴偏微分方程,分析了等离子体电子密度诊断中折射率测量法(如Abel变换方法)的成立条件及适用范围.同时分析了由Schrdinger形式理论得到的电子密度诊断的修正项的效果,并给出了修正后的电子密度诊断算法. 关键词： 等离子体 电子密度 X射线激光 Abel变换     

预充等离子体密度对杆箍缩二极管特性的影响

在杆箍缩二极管工作前预先填充一定密度的等离子体,可以改善二极管特性,从而提高二极管出射X射线的剂量率。建立了预充等离子体的杆箍缩二极管的粒子模拟模型,通过收集轰击到阳极上的电子,诊断其轴向分布,可以给出不同时刻的束流箍缩特性。利用剑光一号加速器低阻抗状态(1 MV/9 /40 ns)开展了预充等离子体的杆箍缩二极管实验研究。预充适当密度的等离子体后,二极管阻抗降低到10 ,X射线辐射剂量从0.76 mGy提高到3.19 mGy,侧向焦斑从9 mm降到4 mm。模拟结果和实验基本符合。     

Determinations of plasma density and decay time in the hollow cathode discharge by microwave transmission

The microwave （MW） transmission method is employed to measure both the plasma density and the plasma decay time in the hollow cathode discharge （HCD） in argon at low pressure. The plasma density in DC-driven or pulsed HCD is on the order of 1012 cm-3, which can block the X-band MW effectively. In the case of pulsed HCD, the MW transmittance shows the same waveform as the pulsed current during the rising edge if the driving frequency is low, but with a longer delay during the falling edge. The MW transmittance reaches a constant low level when the driving frequency is high enough. The plasma decay time in the HCD system is measured to be about 100 μs around a pressure of 120 Pa. The ambipolar diffusion is considered to be the major mechanism in the decay process.     

电子密度对等离子体光子晶体禁带特性的影响

从Maxwell方程出发,采用类似于量子力学Kronig-Penney模型求解周期势的方法,结合双水电极介质阻挡放电的实验结果,研究了电子密度ne对一维等离子体光子晶体禁带特性的影响。研究发现:电子密度对等离子体光子晶体光子禁带的位置和宽度均有重要的影响;等离子体光子晶体的禁带宽度随电子密度的增加而增大,增长速率为电子密度的函数;等离子体光子晶体的截止频率、光子禁带边缘频率随电子密度的增大而增大。给出了当等离子体光子晶体具有显著禁带宽度时的电子密度的理论临界值。     

脉冲高能量密度等离子体材料表面改性及其应用

脉冲高能量密度等离子体（pulsed high energy density plasma, PHEDP）是一项新的材料表面改性技术.它集高电子温度、高能量密度、高定向速度于一身,在制备薄膜时具有沉积薄膜的温度低、沉积效率高、能量利用率高的优点,并兼具表面溅射、离子注入、冲击波和强淬火效应等综合效应;它可以制备纳米晶或非晶硬质薄膜,提高基底材料的表面硬度和耐磨、耐蚀性能;能够实现非金属材料表面金属化,所制备薄膜与基底之间存在很宽的混合过渡区,因此膜/基结合良好.文章主要介绍了作者近年来在该领域的部分研究成果,简要介绍了脉冲高能量密度等离子体的原理、特点及应用.分析了脉冲等离子体与材料相互作用的基本物理现象.     

小尺寸瞬态等离子体电子密度光谱法试验研究

本文对SCB等离子体发射光谱进行了试验研究,在局部热力学平衡条件下,用AlⅠ394.40nm谱线Stark的展宽法测量了SCB等离子体的电子密度;在发射光谱和Saha方程理论的基础上,设计并建立一套测试仪器,时间分辨率为0.1μs,将其测量的电子密度与同种试验条件下的Stark展宽法得到的结果相比较,电子密度的数量级都为1015cm-3－1016cm-3,且随时间的变化的规律相同。     

Nanometer-scale etching of CoFeB thin films using pulse-modulated high density plasma

Pulse-modulated inductively coupled plasma reactive ion etching of nanometer-scale patterned CoFeB thin films was performed in CH₄/O₂/Ar gas mixture. As the pulse on-off duty ratio decreased, the etch selectivity of CoFeB/TiN slightly increased and the etch profiles were improved. Moreover, the etch selectivity of the CoFeB films and the etch profiles were improved with the increase in the pulse frequency of the plasma. X-ray photoelectron spectroscopy revealed that during the pulse-modulated etching in the CH₄/O₂/Ar gas mixture, some polymeric layers were formed on the CoFeB films, which helped prevent the lateral etching and increased the etch selectivity. Consequently, nanometer-scale etching of CoFeB thin films patterned with TiN hard masks could be achieved using pulsed-modulated plasma in CH₄/O₂/Ar gas mixture.     

A spintronic memristive circuit on the optimized RBF-MLP neural network

A radial basis function network (RBF) has excellent generalization ability and approximation accuracy when its parameters are set appropriately. However, when relying only on traditional methods, it is difficult to obtain optimal network parameters and construct a stable model as well. In view of this, a novel radial basis neural network (RBF-MLP) is proposed in this article. By connecting two networks to work cooperatively, the RBF's parameters can be adjusted adaptively by the structure of the multi-layer perceptron (MLP) to realize the effect of the backpropagation updating error. Furthermore, a genetic algorithm is used to optimize the network's hidden layer to confirm the optimal neurons (basis function) number automatically. In addition, a memristive circuit model is proposed to realize the neural network's operation based on the characteristics of spin memristors. It is verified that the network can adaptively construct a network model with outstanding robustness and can stably achieve 98.33% accuracy in the processing of the Modified National Institute of Standards and Technology (MNIST) dataset classification task. The experimental results show that the method has considerable application value.     

有限磁场作用下填充环形等离子体波导中功率流密度的计算

 在考虑有限磁场的作用下,得到了填充等离子体的圆柱光滑波导中各场分量的表达式,然后导出了功率流密度的计算式。通过计算得出等离子体的密度和厚度对功率流密度有极大的影响,并分析了其机理。