High-efficient liquid exfoliation of 2D metal-organic framework using deep-eutectic solvents

The exfoliation of bulk two-dimensional metal–organic framework (MOF) into few-layered nanosheets has attracted much attention recently. In this work, an environmental-friendly route has been developed for layered-MOF (MAMS-1) delamination using deep eutectic solvent (DES), which is more sustainable and efficient alternative than conventional organic solvents for MOF nanosheet preparation. Under sonication condition, DES as solvents, the highest exfoliation rate of MAMS-1 is up to 70% with two host layers via poly(vinylpyrrolidone) (PVP) surfactant-assisted method. The presence of tert-butyl exteriors and the atomically thickness endow the MOF nanosheets stable suspension for at least one month. Due to the 2D structure and excellent stability, MAMS-1 nanosheet (MAMS-1-NS) was chosen as a good candidate to encapsulate Eu³⁺ cations. The obtained Eu³⁺@MAMS-1-NS acts as a multi-responsive luminescent sensor through fluorescence quenching, and can specifically recognize Fe³⁺ (LOD = 0.40 μM, K_SV = 1.05 × 10⁵ M^−l), Hg²⁺ (LOD = 0.038 μM, K_SV = 5.78 × 10⁶ M^−l), Cr₂O₇²⁻ (LOD = 0.33 μM, K_SV = 1.55 × 10⁵ M^−l) and MnO₄⁻ (LOD = 0.088 μM, K_SV = 4.49 × 10⁵ M^−l). Compared with bulk Eu³⁺@MAMS-1, the sensitivity of Eu³⁺@MAMS-1-NS is greatly improved owing to its ultrathin nanosheet morphology and highly accessible active sites on the surface.     

Potential-induced sonoelectrochemical graphene nanosheets with vacancies as hydrogen peroxide reduction catalysts and sensors

Defective graphene nanosheets (dGN_4V) with 5-9, 5-8-5, and point defects were synthesised by a sonoelectrochemical method, where a potential of 4 V (vs. Ag/AgCl) was applied to drive the rapid intercalation of phosphate ions between the layers of the graphite foil as a working electrode. In addition to these vacancies, double vacancy defects were also created when the applied potential was increased to 8 V (dGN_8V). The defect density of dGN_8V (2406 μm⁻²) was higher than that of dGN_4V (1786 μm⁻²). Additionally, dGN_8V and dGN_4V were applied as catalysts for the hydrogen peroxide reduction reaction (HPRR). The mass activity of dGN_8V (1.31 × 10⁻² mA·μg⁻¹) was greater than that of dGN_4V (1.17 × 10⁻² mA·μg⁻¹) because of its high electrochemical surface area (ECSA, 1250.89 m²·g⁻¹) and defect density (N_D, 2406 μm⁻²), leading to low charge transfer resistance on the electrocatalytic interface. The ECSA and N_D of dGN_4V were 502.7 m²·g⁻¹ and 1786 μm⁻², respectively. Apart from its remarkable HPRR activity, the cost-effective dGN_8V catalyst also showed potential as an amperometric sensor for the determination of H₂O₂.     

Lead free KNN/P(VDF-TrFE) 0–3 pyroelectric composite films and its infrared sensor

(K_0.5Na_0.5)NbO₃ (KNN)/[P(VDF-TrFE)70:30] composite thick films with different KNN weight ratios have been fabricated and the effect of KNN mass content on the material structure and properties have been studied in this paper. Properties of the infrared sensor based KNN/[P(VDF-TrFE)70:30] composite thick film were also systematically studied. It was found that the sample containing 30 wt.% KNN show optimal properties for pyroelectric appliance and the highest pyroelectric coefficient was 63 μCm⁻² K⁻¹. Infrared sensors using 30 wt.% KNN-70 wt.%[P(VDF-TrFE)70:30] show highest detectivity (D¹ = 3.21 × 10⁸ cm Hz^1/2 W⁻¹) at 137.3 Hz, indicating it is an promising candidate in lead-free quick response infrared detectors.     

A study of electrical enhancement of polycrystalline MgZnO/ZnO bi-layer thin film transistors dependence on the thickness of ZnO layer

A polycrystalline MgZnO/ZnO bi-layer was deposited by using a RF co-magnetron sputtering method and the MgZnO/ZnO bi-layer TFTs were fabricated on the thermally oxidized silicon substrate. The performances with varying the thickness of ZnO layer were investigated. In this result, the MgZnO/ZnO bi-layer TFTs which the content of Mg is about 2.5 at % have shown the enhancement characteristics of high mobility (6.77–7.56 cm² V⁻¹ s⁻¹) and low sub-threshold swing (0.57–0.69 V decade⁻¹) compare of the ZnO single layer TFT (μ_FE = 5.38 cm² V⁻¹ s⁻¹; S.S. = 0.86 V decade⁻¹). Moreover, in the results of the positive bias stress, the ΔV_on shift (4.8 V) of MgZnO/ZnO bi-layer is the 2 V lower than ZnO single layer TFT (ΔV_on = 6.1 V). It reveals that the stability of the MgZnO/ZnO bi-layer TFT enhanced compared to that of the ZnO single layer TFT.     

Structure evolution and microwave dielectric response of (Ca0.5+xSr0.5−x)[(Al0.5Nb0.5)0.5Ti0.5]O3 solid solutions

The phase assemblage, crystal structure evolution and microwave dielectric response of (Ca_0.5+xSr_0.5−x)[(Al_0.5Nb_0.5)_0.5Ti_0.5]O₃ ceramics (abbreviated as CSANT hereafter) are investigated. Single perovskite solid solution is formed in the CSANT ceramics in Sr-rich composition range of x < −0.05, however, Ca₄Ti₃O₁₀-type layered perovskite phase begins to segregate after x = −0.05. The CSANT perovskites crystallized in Fm3m cubic symmetry in the composition range of x ≤ −0.2, however, as the Ca²⁺ content in A-site increased, the oxygen octahedral began to be anti-phase tilted at x = −0.1 and the crystal structure transited to P2₁/n pseudo-orthorhombic space group thereafter. The microwave dielectric response of the CSANT ceramics is elaborately discussed in terms of their crystallographic structure and chemical composition. When sintered at 1500 °C for 4 h, a dielectric constant ɛ_r of 52.5, a Qf product of 28000 GHz and a τ_f of +25.4 ppm/°C microwave dielectric ceramic can be obtained in the CSANT ceramics at x = 0.3.     

Ultrasonically assisted synthesis of barium stannate incorporated graphitic carbon nitride nanocomposite and its analytical performance in electrochemical sensing of 4-nitrophenol

We describe the ultrasonic assisted preparation of barium stannate-graphitic carbon nitride nanocomposite (BSO-gCN) by a simple method and its application in electrochemical detection of 4-nitrophenol via electro-oxidation. A bath type ultrasonic cleaner with ultrasonic power and ultrasonic frequency of 100 W and 50 Hz, respectively, was used for the synthesis of BSO-gCN nanocomposite material. The prepared BSO-gCN nanocomposite was characterized by employing several spectroscopic and microscopic techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, fourier transform infra-red, field emission scanning electron microscopy, and high resolution transmission electron microscopy, to unravel the structural and electronic features of the prepared nanocomposite. The BSO-gCN was drop-casted on a pre-treated glassy carbon electrode (GCE), and their sensor electrode was utilized for electrochemical sensing of 4-nitrophenol (4-NP). The BSO-gCN modified GCE exhibited better electrochemical sensing behavior than the bare GCE and other investigated electrodes. The electroanalytical parameters such as charge transfer coefficient (α = 0.5), the rate constant for electron transfer (k_s = 1.16 s⁻¹) and number of electron transferred were calculated. Linear sweep voltammetry (LSV) exhibited increase in peak current linearly with 4-NP concentration in the range between 1.6 and 50 μM. The lowest detection limit (LoD) was calculated to be 1 μM and sensitivity of 0.81 μA μM⁻¹ cm⁻²_. A 100-fold excess of various ions, such as Ca²⁺, Na⁺, K⁺, Cl⁻, I⁻, CO₃²⁻, NO₃, NH₄⁺ and SO₄²⁻ did not able to interfere with the determination of 4-NP and high sensitivity for detecting 4-NP in real samples was achieved. This newly developed BSO-gCN could be a potential candidate for electrochemical sensor applications.     

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

An InGaAS/GaAs heterostructure transistor utilizing a gradedIn_xGa_1 − xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying fromx =  0.25 (at the buffer–channel interface) to x =  0.1 (at the spacer–channel interface) structure, a peak extrinsic transconductance of 24.6 S mm ^− 1(atV_DS =  6.5 V,V_GSstep =  − 0.5 mV) and a saturation current density as high as 555 mA mm ^− 1for a gate length of 1.5 μ m are obtained.     

Anomalous conductivity and microstructure in gadolinium doped ceria prepared from nano-sized powder

The temperature and the oxygen partial pressure dependences of the electron and hole conductivities were measured by the dc polarization method using a Hebb–Wagner's ion blocking cell for Gd_0.2Ce_0.8O_1.9 polycrystalline bodies with grain size of 0.5 μm prepared by sintering of nano-sized powder. A significant enrichment of gadolinium was observed in the vicinity of the grain boundary by TEM/EDS analyses. The electron conductivity were comparable with those of conventional Gd_0.2Ce_0.8O_1.9 polycrystalline body with grain size of 2 μm, and it followed p(O₂)^− 1/4 dependence at temperatures T = 973–1273 K. However, the observed hole conductivity was higher than that of conventional Gd_0.2Ce_0.8O_1.9, and it did not follow p(O₂)^1/4 dependence. This anomalous p(O₂) dependence disappeared after the sample was treated at T = 1773 K for 38 h and grain size was enlarged to 2–10 μm.     

Synergetic effects of ultrasound and sodium alginate coating on mass transfer and qualities of osmotic dehydrated pumpkin

This research studied the effects of combined ultrasound and 3% sodium alginate (SA) coating pretreatment (US + Coat) on mass transfer kinetics, quality aspects, and cell structure of osmotic dehydrated (OD) pumpkin. The results of the pretreatment were compared with the results of control (non-pretreated osmotic dehydration) and other three pretreatment methods, which were 1) ultrasound in distilled water for 10 min (USC), 2) ultrasound in 70% (w/w) sucrose solution (US) for 10, 20 and 30 min, and 3) coating with 1%, 2%, 3% (w/w) SA. The coating pretreatments with SA resulted in a higher water loss (WL) but lower water activity and solid gain (SG) than other treatments. US pretreatments resulted in the highest effective diffusion coefficients of water (D_w) and solid (D_s) but the cell structure of the product was deformed. The 3% SA coating treatment had the highest WL/SG (5.28) but with the longest OD time (12 h). Using the US + Coat pretreatment gave satisfactory high WL/SG (5.18), D_w (1.09 × 10⁻¹⁰ m²s⁻¹) and D_s (5.15 × 10⁻¹¹ m²s⁻¹), reduced the OD time to 9 h, and preserved the cell structure of the product. This research suggests that US + Coat pretreatment can be an effective processing step in the production of OD pumpkin.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.     

Flexible thermoelectric module based on zinc oxide thin film grown via SILAR

In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 °C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient −147 μV/K and thermoelectric power factor ~1 μW K⁻² m⁻¹ at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m² at ΔT = 50 K.     

Diffusion of Fe,Co, Nd,and Dy in R2(Fe1−xCox)14B where R=Nd or Dy

Transition metal and rare earth diffusion coefficients at 1323 K in Dy_2−yNd_y(Fe_1−xCo_x)₁₄B were determined by field emission energy dispersive spectroscopy compositional analysis of diffusion couple specimens. Various arrangements of component materials and temperatures were examined in order to understand the mechanisms affecting diffusion of the components and to predict the stability of functionally graded microstructures consisting of a dysprosium-rich (Dy_2−yNd_y(Fe_1−xCo_x)₁₄B) outer layer and a neodymium-rich (Nd₂(Fe_1−xCo_x)₁₄B) interior. Estimates of the mutual interdiffusion coefficients of Dy, Nd, Fe, and Co in this system were obtained from the preparation of arc melted and annealed polycrystalline specimens, assuming that the diffusion coefficients were independent of concentration (Grube solution). Fifteen diffusion couples were prepared and heat treated at 1323 K for various times in order to provide data for calculation of the diffusion coefficients. The results indicate that the diffusion coefficients of Fe and Co (D_Fe=3.28×10⁻¹⁰ cm²/s and D_Co=7.63×10⁻¹⁰ cm²/s) were significantly higher at 1323 K in this system than those for Dy and Nd (D_Nd=2.3×10⁻¹² cm²/s and D_Dy=2.9×10⁻¹² cm²/s).     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Intravoxel incoherent motion MR imaging analysis for diagnosis of placenta accrete spectrum disorders: A pilot feasibility study

BackgroundPlacenta accreta spectrum (PAS) disorders occur when the placenta adheres abnormally to the uterine myometrium and can have devastating effects on maternal health due to risks of massive postpartum hemorrhage and possible need for emergency hysterectomy. PAS can be difficult to diagnose using routine clinical imaging with ultrasound and structural MRI.ObjectiveTo determine feasibility of using intravoxel incoherent motion (IVIM) magnetic resonance imaging (MRI) analysis in the diagnosis of the placenta accreta spectrum disorders in pregnant women.MethodsA total of 49 pregnant women were recruited including 14 with pathologically confirmed cases of PAS and 35 health controls without prior cesarean delivery and no suspected PAS by ultrasound. All women underwent diffusion-weighted imaging with an 8 b-value scanning sequence. A semi-automated method for image processing was used, creating a 3D object map, which was then fit to a biexponential signal decay curve for IVIM modeling to determine slow diffusion (D_s), fast diffusion (D_f), and perfusion fraction (P_f).ResultsOur results demonstrated a high degree of model fitting (R² ≥ 0.98), with P_f significantly higher in those with PAS compared to healthy controls (0.451 ± 0.019 versus 0.341 ± 0.022, p = 0.002). By contrast, no statistical difference in the D_f (1.70 × 10⁻² ± 0.38 × 10⁻² versus 1.48 × 10⁻² ± 0.08 × 10⁻² mm²/s, p = 0.211) or D_s (1.34 × 10⁻³ ± 0.10 × 10⁻³ versus 1.45 × 10⁻³ ± 0.007 × 10⁻³ mm²/s, p = 0.215) was found between subjects with PAS and healthy controls.ConclusionsThe use of MRI, and IVIM modeling in particular, may have potential in aiding in the diagnosis of PAS when other imaging modalities are equivocal. However, the widespread use of these techniques will require generation of large normative data sets, consistent sequencing protocols, and streamlined analysis techniques.     

Phase transitions and dielectric properties of (1 − x)KNbO3 − xK0.5Bi0.5TiO3 ceramics synthesized by a stirred hydrothermal process

Dielectric ceramic materials (1 − x) KNbO₃ − xK_0.5Bi_0.5TiO₃ (0 ≤ x ≤ 0.3) have been successfully synthesized via a stirred (dynamic) hydrothermal method. The microstructure, relative density and dielectric properties were studied as a function of KBT doping. The structure of the solid solutions changed from orthorhombic (x = 0; 0.05) to tetragonal (x = 0.1; x = 0.3) at room temperature. The morphotropic phase limit was obtained at x = 0.075 where we have noted the coexistence of the orthorhombic and tetragonal structures. The mean value of the measured dielectric permittivity ε_r was 700 and dielectric loss tanδ was about 0.06 at room temperature. The dielectric properties of the studied ceramics, from 80 to 450 K, depend not only on their microstructure but also on their relative density. A relaxation behavior was observed for the tanδ curves at temperature below 150 K. The activation energy (E_a) of this phenomenon increases from 0.15 to 0.34 eV with the increase of KBT amount. The conductivity σ_ac remains constant at about 10⁻⁶ S m⁻¹.     

Infrared spectra of acetylene–water complexes: C2D2–H2O,C2D2–HDO,and C2D2–D2O

Infrared spectra of C₂D₂–water complexes are studied in the 4.1 μm region of the C₂D₂ ν₃ fundamental band using a tunable diode laser source to probe a pulsed supersonic slit jet. Relatively large vibrational red shifts (?27.7 to ?28.0 cm^?1) are observed which are more easily interpretable than for the analogous C₂H₂ vibration thanks to the absence of Fermi resonance effects for C₂D₂. Noticeable homogeneous line broadening leads to estimates of upper state predissociation lifetimes of about 0.5, 0.9 and 1.1 ns for C₂D₂–H₂O, –HDO, and –D₂O, respectively. Transitions involving K_a = 0 and 1 levels are observed for C₂D₂–HDO, but there is a puzzling absence of K_a = 1 for C₂D₂–H₂O and C₂D₂–D₂O.     

Growth and scintillation properties of (Lu1 − x Tmx)2SiO5 [x = 0.001, 0.01, 0.1, 1]

(Lu_1 − xTm_x)₂SiO₅ (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm³⁺ 4f–4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the ³H₆ ground state to its excited states, ¹I₆, ³P₆,¹D₂, ¹G₄, ³F₃ and ³H₄, respectively. Strong emission peak due to ¹D₂ → ³F₄ transition of Tm³⁺ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by ¹³⁷Cs gamma-ray exposure.     

Development of perovskite and phase transition in lead cobalt niobate modified lead zirconate titanate system

Ferroelectric lead zirconate titanate–lead cobalt niobate ceramics with the formula (1 − x)Pb(Zr_1/2Ti_1/2)O₃–xPb(Co_1/3Nb_2/3)O₃ where x = 0.0–0.5 were fabricated using a high temperature solid-state reaction method. The formation process, the structure and homogeneity of the obtained powders have been investigated by X-ray diffraction method as well as the simultaneous thermal analysis of both differential thermal analysis (DTA) and thermogravimetry analysis (TGA). It was observed that for the binary system (1 − x)Pb(Zr_1/2Ti_1/2)O₃–xPb(Co_1/3Nb_2/3)O₃, the change in the calcination temperature is approximately linear with respect to the PCoN content in the range x = 0.0–0.5. In addition, X-ray diffraction indicated a phase transformation from a tetragonal to a pseudo-cubic phase when the fraction of PCoN was increased. The dielectric permittivity is remarkably increased by increasing PCoN concentration. The maximum value of remnant polarization P_r (25.3 μC/cm²) was obtained for the 0.5PZT–0.5PCoN ceramic.     

High-accuracy fluence determination in ion beams using fluorescent nuclear track detectors

We present an approach to use Al₂O₃:C,Mg-based fluorescent nuclear track detectors (FNTDs) and confocal laser scanning microscopy as a semiautomatic tool for fluence measurements in clinical ion beams. The method was found to cover a linear energy transfer (LET) range from at least L_∞(Al₂O₃) = 0.5 keV/μm to 61,000 keV/μm with a detection efficiency ≥99.83% (20 MeV protons) at particle fluences up to at least 5 × 10⁷ per cm². Our technique allows to determine the spatial fluence distribution on a microscopic scale and enables detailed track-by-track comparison studies between different fluence detectors.     

Dielectric,ferroelectric and field-induced strain response of lead-free BaZrO3-modified Bi0.5Na0.5TiO3 ceramics

Lead-free piezoelectric ceramics (1 − x)Bi_0.5Na_0.5TiO₃–xBaZrO₃ (BNT–BZ100x, with x = 0–0.10) were prepared using a conventional solid-state reaction method. The crystal structure, microstructure, dielectric, ferroelectric, and piezoelectric properties of BNT–BZ100x ceramics were studied as functions of different BZ content. X-ray diffraction patterns revealed that the BZ completely diffused in the BNT lattice in the studied composition range. An appropriate amount of BZ addition improved the dielectric, ferroelectric, and piezoelectric properties of BNT ceramics. The remanent polarization (P_r) and piezoelectric constant (d₃₃) increased from 22 μC/cm² and 60 pC/N for pure BNT to 30 μC/cm² and 112 pC/N for x = 0.040, respectively. In addition, electric field-induced strain was enhanced to its maximum value (S_max = 0.40%) with normalized strain (d*₃₃ = S_max/E_max = 500 pm/V) at an applied electric field of 8 kV/mm for x = 0.055. The enhanced strain can be attributed to the coexistence of ferroelectric and relaxor ferroelectric phases.