真空和常规封装下有机发光器件寿命试验

对紫外固化环氧树脂封装的商品蓝光有机发光器件进行了打开封装后在高真空（10-5 Pa）环境下的寿命实验,同时对未开封的同样器件在大气环境下进行了同样参数的寿命实验。实验结果表明,高真空下未封装器件的加速寿命为1675 h,而大气下封装器件的加速寿命为1224 h。这一结果表明在高真空环境下,有机发光器件的寿命有明显的提高,这证明了水蒸气和氧气通过紫外固化环氧树脂封装材料的渗透是影响紫外环氧树脂封装有机电致的发光器体(OLED)寿命的重要因素;封装器件内的吸气片不能完全吸收经封装渗透进入器件内的水蒸气和氧气。除了水蒸气和氧气渗透封装的因素外,OLED的寿命过程还存在其他的重要影响因素。     

Ultraviolet discharges from a radio-frequency system for potential biological/chemical applications

In this work, we describe a new electrode-less radio-frequency(RF) excitation technique for generating excimers in the vacuum ultraviolet(VUV) and ultraviolet(UV) spectral regions for potential biological/chemical applications. Spectra data of Xe~*_2, XeI~*, and KrI~* generated by this new technique are presented. Optical efficiency of the lamp system ranges from 3% to 6% for KrI~*, 7% to 13% for XeI~*, and 15% to 20% for Xe~*_2. Also, results of irradiating E-coli with XeI~*discharge from this lamp system is presented to show one of the promising applications of such electrode-less apparatus.This new RF lamp system offers an interesting addition to the already existing technologies for generating VUV and UV light for various biological, physical, and chemical processes especially those requiring large area for high productivity.     

平板显示技术比较及研究进展

平板显示因具有体积小、重量轻、功耗低、画质好等优点,已被广泛应用于电子仪表显示、车载显示、数码相机、智能手机、个人电脑、电视产品等领域之中。本文介绍了薄膜晶体管液晶显示(Thin Film Transistor-Liquid Crystal Display,TFTLCD)、有机发光二极管Organic Light Emitting Diode(OLED)显示、量子点发光二极管Quantum Dot Light Emitting Diode(QLED)显示及微发光二极管(Micro-LED)显示这几种平板显示技术的结构及原理。从结构、材料、性能、应用几方面对这几种平板显示技术进行了比较。最后给出了这几种平板显示技术的最新研究进展。LCD显示经过多年发展,技术成熟,成本低廉,仍然在显示市场占据主流地位。OLED显示技术摆脱了传统LCD的背光源,开创了自发光显示的未来发展方向。在相当一段时期内,LCD和OLED仍将会共存于市场中,相互竞争和补充。QLED显示和Micro-LED显示这两种显示技术,在理论上较OLED显示具有更好的颜色表现、更长的工作寿命等优势,具有非常广阔的发展前景,将为未来显示行业提供更多更好的选择。     

(Y,G d)(P,V)O4:Eu3+荧光粉的发光特性

采用高温固相方法合成了(Y,Gd)(P,V)O₄:Eu³⁺,经X射线结构分析确定为四方晶系,体心结构,空间群为I4₁/amd[141]。研究了(Y,Gd)(P,V)O₄:Eu³⁺在VUV及UV激发下的光谱特性,讨论了激活剂Eu³⁺的浓度对发光亮度的影响。(Y,Gd)(P,V)O₄:Eu³⁺荧光粉的发射主峰在619nm,证明Eu³⁺离子占据了非反演对称中心的位置。在(Y,Gd)(P,V)O₄:Eu³⁺(监控619nm)的激发谱,有一个中心位于156nm的吸收带,它属于基质的吸收带。将(Y,Gd)(P,V)O₄:Eu³⁺的发光性能与PDP商用红粉(Y,Gd)BO₃:Eu³⁺进行了比较。(Y,Gd)(P,V)O₄:Eu³⁺的发射主峰在619nm,比发射主峰为593nm的(Y,Gd)BO₃:Eu³⁺色纯度好,是一种很有应用前景的发光材料。     

Rapid laser fabrication of microlens array using colorless liquid photopolymer for AMOLED devices

Microlens array (MLA) is microfabricated using Ultra Violet (UV) laser for display device applications. A colorless liquid photopolymer, Norland Optical Adhesive (NOA) 60, is spin-coated and pre-cured via UV light for completing the laser process. The laser energy controlled by a galvano scanner is radiated on the surface of the NOA 60. A rapid thermal volume expansion inside the material creates microlens array when the Gaussian laser energy is absorbed. The fabrication process conditions for various shapes and densities of MLA using a non-contact surface profiler are investigated. Furthermore, we analyze the optical and display characteristics for the Organic Light Emitting Diode (OLED) devices. Optimized condition furnishes the OLED with the enhancement of light emission by 15%. We show that UV laser technique, which is installed with NOA 60 MLA layer, is eligible for improving the performance of the next generation display devices.     

有机发光二极管显示屏的喷墨打印研究与展望

近年来,有机发光二极管(OLED)被广泛应用于智能手机等中小尺寸显示屏,并逐步进入电视等大尺寸显示领域和照明市场。随着OLED平板显示新时代的到来,对显示屏的彩色化与图案化研究提出了更高要求。与传统真空蒸镀技术相比,喷墨打印技术更容易实现大面积器件的彩色化和复合功能材料的图案化,且工艺简单,成本低廉,并可进行柔性器件加工。本文综述了采用喷墨打印技术制备OLED显示屏的研究现状,并系统介绍了喷墨打印设备的发展历程,通过优化bank结构提高显示屏的分辨率,优化墨水配方及组成配比抑制喷墨液滴的“咖啡环”效应,从而提高显示器发光均匀性,最后对国内外该技术产业进行了概述与展望。     

Polymer photoablation under windowless VUV hydrogen or helium discharge lamp

In this work, the photoablation of PolyPhenyl-Quinoxaline (PPQ) films is investigated by using the vacuum ultraviolet (VUV) incoherent emission (λ<160nm) from a novel windowless hydrogen (or helium) discharge lamp. A tentative explanation of the film etching process is given through the photochemical reactions which take place in the polymer under VUV illumination.     

Rubidium metavanadate formation at room temperature under vacuum ultraviolet irradiation from metal-organic compositions

White light emitting phosphor RbVO₃ films have been successfully fabricated by means of a vacuum ultraviolet (VUV) irradiation using an excimer lamp after spin coating of metal-organic solution onto substrates. The metal-organic carboxylates coated on substrates decomposed and reacted under the VUV irradiation. The metal-organic bonds were efficiently cleaved by the VUV illumination not only in air but also in vacuum, however, there was not a strong driving force for the reaction process to the formation of RbVO₃ in the vacuum atmosphere. On the contrary, the reaction and crystallization simultaneously proceeded under photo-chemically produced active oxygen and/or ozone atmospheres due to the VUV illumination in air. The reaction between the photo-activated Rb-O and V-O species could be strongly enhanced by the oxidation atmospheres at the moment of the metal-organic bond cleavage under the VUV irradiation.     

Vacuum ultraviolet smoothing of nanometer-scale asperities of Poly(methyl methacrylate) surface

Smoothing of the nanometer-scale asperities of a poly(methyl methacrylate) (PMMA) film using vacuum ultraviolet (VUV) with the wavelength λ = 123.6 nm was studied. The exposure time and the residual air pressure in an working chamber were varied during the process of VUV treatment. A nanostructured surface of PMMA film is used as a sample to be exposed. The nanostructured surface of the PMMA film was obtained by treating the initially smooth spin-coated film in oxygen radio-frequency plasma. The degree of VUV exposure is estimated using changes in the morphology and roughness of the nanostructured surface, which were determined by atomic-force microscopy (AFM). Recognition of morphological surface features on the AFM-images and determination of main geometrical characteristics of these features are performed by using virtual feature-oriented scanning method. It is discovered by morphology and Fourier spectra that the nanostructured surface of the PMMA film is partially ordered. The developed VUV smoothing procedure can be used to treat the electron-beam, UV, and X-ray sensitive PMMA resists, PMMA elements of microelectromechanical systems, biomedical PMMA implants, as well as to certify nanotechnological equipment incorporating UV radiation sources.     

Enhancement of VUV Emission from a Coaxial Xenon Excimer Ultraviolet Lamp Driven by Distorted Bipolar Square Voltages

Enhancement of vacuum UV emission (172 nm VUV) from a coaxial xenon excimer UV lamp (EUV) driven by distorted 50 kHz bipolar square voltages, as compared to that by sinusoidal voltages, is investigated numerically in this paper. A self‐consistent radial one‐dimensional fluid model, taking into consideration non‐local electron energy balance, is employed to simulate the discharge physics and chemistry. The discharge is divided into two three‐period portions; these include: the pre‐discharge, the discharge (most intense at 172 nm VUV emission) and the post‐discharge periods. The results show that the efficiency of VUV emission using the distorted bipolar square voltages is much greater than when using sinusoidal voltages; this is attributed to two major mechanisms. The first is the much larger rate of change of the voltage in bipolar square voltages, in which only the electrons can efficiently absorb the power in a very short period of time. Energetic electrons then generate a higher concentration of metastable (and also excited dimer) xenon that is distributed more uniformly across the gap, for a longer period of time during the discharge process. The second is the comparably smaller amount of “wasted” power deposition by Xe⁺₂ in the post‐discharge period, as driven by distorted bipolar square voltages, because of the nearly vanishing gap voltage caused by the shielding effect resulting from accumulated charges on both dielectric surfaces (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fabrication and implementation of large-area organic light-emitting-diode devices on direct patterned backplanes

In this paper, we report on a new cost-effective fabrication technology for large-area organic light-emitting diode (OLED) devices that we have developed. We fabricated OLED lighting devices on a directly patterned backplane using a dry process without employing conventional photolithography patterning technology. The indium–tin-oxide (ITO) anode, metal cathode, insulator, and emissive organic layer patterns were all formed directly on the substrates during the sputtering and evaporation steps by using a shadow mask without using etching or lift-off methods. We fabricated and characterized green phosphorescent emission OLED devices with an emission area of 30 × 120 mm², based on backplanes formed by direct patterning technology. Application of direct patterning technology reduced the total number of processing steps to 4 from the 26 steps required by conventional photo-patterning technology, making it possible to reduce large-scale production cost. Although the process steps were reduced considerably, the typical characteristics were comparable to those of photo-patterned OLEDs. Furthermore, the lifetime of the OLEDs based on direct patterned backplane was observed to be 27,200 h, which is approximately 97% of the lifetime of conventionally patterned OLEDs.     

Generation of intense sub-20-fs vacuum ultraviolet pulses compressed by material dispersion

We present our latest results on the generation of ultrashort vacuum UV (VUV) pulses by nonresonant four-wave mixing of chirped broadband pulses generated by filamentation of the fundamental of a Ti:sapphire laser with relatively narrowband pulses at the third harmonic. Positive chirp at the broadband idler yields negatively chirped VUV pulses necessary to compensate for material dispersion of a MgF(2) window in the VUV beam path. Pulse energies exceeding 400 nJ are available for time-resolved experiments. Pulse duration is measured by pump-probe ionization of Xe gas, providing the cross correlation between the fifth harmonic and the fundamental.     

组合方法筛选新型发光材料

结合作者课题组开展的工作,简要介绍了组合方法在发光材料研究中的应用.包括:适用于发光材料库合成的组合溶液喷射和原位掩模薄膜顺序沉积技术;应用于发光材料库高通量筛选的照相术、组合扫描光谱和组合真空紫外发光表征系统.列举了组合方法在稀土聚合物敏化发光材料、真空紫外发光材料和长余辉发光材料等研究中的应用.     

彩色有源OLED显示屏上像素仿真及外围驱动电路设计

有机发光二极管(Organic Light Emitting Diode,OLED)由于高对比度、高亮度、超薄、低功耗、宽视野、快响应速度等特性,日益引起人们的兴趣。通过对部分周边驱动电路集成于衬底的2英寸(5.08cm,64×3×80)有源矩阵显示屏(Active Matrix OLED,AMOLED)上像素驱动电路的仿真,确定彩色OLED显示屏维持白平衡时R、G、B三种OLED所需的驱动电压、电流等工作参数。OLED的发光亮度和电压并不是线性关系,为了维持显示屏的色彩均衡性,对图像数据编码进行校正,保证了灰阶电压与发光亮度呈线性变化。从BMP格式的文件中提取出图像数据部分,进行数据变换,生成符合INTELHEX文件格式并且满足D/A输出要求的数据文件,刻录到E²PROM中,完成外围驱动电路所需要的图像数据准备。AMOLED显示屏采用逐行扫描的显示方式,因此外围驱动电路的目的是要在行、列扫描有效的同时,为每个像素送入相应的灰阶数据。现在,OLED专用驱动芯片比较少见,而液晶驱动芯片具有集成度高,电压输出范围大等优点,尤其是其内部集成了数据移位寄存器、数据锁存器、D/A转换器等电路,所以设计了基于FPGA和TFT-LCD液晶驱动芯片的外围驱动电路,实现了AMOLED显示屏的彩色图像显示。     

陶瓷基片薄膜电致发光器件

本文报道了一种新颖的陶瓷基片薄膜电致发光器件(CSTFEL),使用高介电常数的陶瓷片作器件的基片,同时又作为器件中的绝缘层,陶瓷片表面无需抛光处理,直接制作发光器件,工艺简单,用市电50Hz,220V驱动,亮度大于30cd/m2,寿命大于10000小时.     

High efficiency organic light-emitting display using selective spectral photo-recycling

Here, we introduce a selective photo-recycling scheme for organic light-emitting diode (OLED) displays. The conventional photo-recycling method, which uses a recycling film named DBEF, diminishes the ambient contrast ratio of the OLED display, so it is not suitable for display applications. The selective recycling scheme, which uses a cholesteric liquid crystal (CLC) layer that recycles light only in a specific spectral range, can minimize the deterioration of the ambient contrast ratio while improving the photo-efficiency. We found that the aperture ratio of the OLED display influences the recycling efficiency significantly, and that a thin CLC layer diminishes the ambient contrast ratio less than a thick CLC layer while it still recycles the emitted light. By recycling the blue spectral range, one can improve the lifetime of blue OLE material, which has the shortest lifetime, or reduce the size of the blue pixel, which has the largest size among red, green, and blue pixels.     

VUV超短脉冲的产生及其在超快动力学中的应用

真空紫外超短脉冲激光具有波长短、单光子能量高、脉宽小等特点,在飞秒化学以及超快动力学等方面具有相当广泛的应用前景.由于直接利用受激辐射获得真空紫外超短脉冲是相当困难,因此利用非线性频率转换技术,超短脉冲与惰性气体相互作用,将红外、可见或紫外光波段的超短脉冲转换到真空紫外波段是目前获得紫外超短脉冲最快捷有效的方式.围绕真空紫外超短脉冲的产生及其在超短动力学中应用展开,介绍了产生真空紫外超短脉冲的高斯谐波、空心光纤四波混频和光丝四波混频的方法,对其优缺点作了评述,并对真空紫外超短脉冲激光在超快动力学过程中的应用进行了简单的总结.     

Plasma interactions with aminoacid (l-alanine) as a basis of fundamental processes in plasma medicine

Plasma interactions with l-alaine have been studied as a basis of fundamental processes in plasma medicine. The plasma interactions with l-alaine have been examined for investigations of molecular degradations induced by direct exposures with Ar plasma and exposures with UV–VUV photons emitted from the Ar plasma via chemical bonding states analyses using X-ray photoelectron spectroscopy (XPS). The direct Ar-plasma exposure resulted in significant degradations of COOH group and CNH₂ group. Separate experiments via irradiation with photons in UV and VUV regions from the Ar plasma showed that the molecular degradation via irradiation with photons in VUV region was much more significant than via irradiation with photons in UV region. These experiments have indicated that the causality of the molecular degradation of the l-alanine during the Ar plasma exposure is considered to be significant in the following order; ions > VUV photons > UV photons ～ meta-stable radicals. Furthermore, the exposure with Ar–O₂ mixture plasma resulted in insignificant change in the XPS C1s spectra for variation of the exposure time ranging from 30 s to 300 s, indicating that the surface etching process is much more considerable than the chemical degradation process.     

一种新的OLED亮度均匀度测试方法

根据CCD的成像特点,建立了CCD感光像素与OLED显示像素亮度的关系,从而提出了一种由CCD采集图像分析OLED显示设备亮度均匀度的理论方法。给出了一种基于CCD摄像器件的测试平台与软件系统,阐述了测试平台的主要组成、工作流程以及设计要点等。给出了OLED样板的测试评估结果,表明了这种基于CCD的测试平台与评估理论的方法是快捷而有效的。     

Fabrication and photoluminescence characteristic of Pr:LuAG scintillator ceramics

0.5at% Pr:LuAG transparent ceramics was fabricated by a solid state reaction method. The transmission of the ceramics beyond 310 nm reaches to around 75%. When excited by ultraviolet (UV) and vacuum ultraviolet (VUV) light, the domain emission near 309 nm was observed which was due to the 5d–4f radiative transition of Pr³⁺. Its photoluminescence decay time is about 19 ns. VUV excitation and emission spectrum at 14 K and 289 K respectively reveal the existence of defects and other centers, which are sensitive to temperature and anneal process.