Energy relaxation of two-dimensional electrons in the quantum Hall effect regime

The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τ_e of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ _e ^?1 oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ _e ^?1 is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ _e ^?1 when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ _e ^?1 (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

Acoustic perturbations in a pulsedRF-plasma

The response of a stationary weakly ionized plasma to a density perturbation in the neutral gas component was studied in a neon plasma with the following typical properties: electron density ¯N _e≈8×10¹² cm^?3, electron temperature on the axis of the vesselT _e0≈3.0 eV; neutral gas densityN _n≈1×10¹⁷cm^?3 and neutral gas temperatureT _n0≈600 °K. A neutral density perturbation, generated 50 cm apart from the plasma, produces a fluctuation in the ion density and a sharp spike in the differential voltage of a floating double probe. The experimental observations demonstrate the propagation of an ion sheath and of an electric field perturbation together with the neutral density perturbation. An interpretation of the plasma response to acoustic wave pulses has been proposed by Ingard and Schulz in a theory on acoustic wave modes in a weakly ionized gas. The experimental results are in good agreement with the theoretical expectations.     

Theory of the hot free carrier intraband-absorption coefficient of n-inversion layers

The absorption coefficient K of a quasi two dimensional (2D) hot free electron gas is calculated for the first time as a function of the lattice temperature T, the photon angular frequency w, the carrier density N_s as well as the electron temperature T_e when the carriers are scattered by ionized impurities, acoustic phonons and polar optical phonons. Analytical expressions are derived in the limiting cases of non-degeneracy and degeneracy of the electron system. In the quantum limit ħw/k_BT_e ≳ 1 where the interaction between the electron and the photon is inelastic K sensitively depends on the limiting scattering mechanism showing that the electron motion is completely controlled by the photon field. In the classical limit ħw/k_BT_e ⪡ 1 the absorption decreases proportional to w¹ independent of the limiting scattering mechanism in agreement with the experimental data deduced from far-infrared absorptivity measurements on GaAs heterolayers.     

Momentum and energy relaxation of warm carriers in semiconductors

Non-linear microwave optics of semiconductors is influenced by two relaxation times τ _m and τ_? which determine energy and momentum relaxation. In the range of warm carriers τ_? is assumed to be not dependent and τ _m linearly dependent on energy. The simple model of band structure of semiconductors and a monoenergetic energy distribution of carriers are assumed. The calculation yields the frequency dependence of the nonlinearity coefficient β as observed by Seeger with Morgan's experimental arrangement (parallel d.c. and a.c. electric fields) also at high frequencies and low temperatures. Furthermore, the h.f. behaviour of frequency multiplication and harmonic mixing are given.     

A theoretical treatment of the line-intensity jump in a decaying argon-arc plasma

The line-intensity jump in decaying argon arcs has been investigated theoretically. The population density at the peak of the jump is in Saha-Boltzmann equilibrium. Using the Saha-Boltzmann relation, the influence of the change in electron density is clarified. As a criterion above which the change in electron density does not influence the amplitude of the jump, τ_N/τ_T ≧ 10₃ is derived, where τ_N and τ_T are, respectively, the density and temperature relaxation times for the electrons. This criterion is not satisfied in most arcs. An improved method is presented for the determination of the gas temperature in stationary arcs.     

Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K

The temperature dependence of the energy relaxation time τ_e (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τ_e, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ _e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τ_LOτ4.5 ps). The energy losses calculated from the τ_e data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)     

Acoustic scattering of a high-order Bessel beam by an elastic sphere

The exact analytical solution for the scattering of a generalized (or “hollow”) acoustic Bessel beam in water by an elastic sphere centered on the beam is presented. The far-field acoustic scattering field is expressed as a partial wave series involving the scattering angle relative to the beam axis and the half-conical angle of the wave vector components of the generalized Bessel beam. The sphere is assumed to have isotropic elastic material properties so that the nth partial wave amplitude for plane wave scattering is proportional to a known partial-wave coefficient. The transverse acoustic scattering field is investigated versus the dimensionless parameter ka(k is the wave vector, a radius of the sphere) as well as the polar angle θ for a specific dimensionless frequency and half-cone angle β. For higher-order generalized beams, the acoustic scattering vanishes in the backward (θ = π) and forward (θ = 0) directions along the beam axis. Moreover it is possible to suppress the excitation of certain resonances of an elastic sphere by appropriate selection of the generalized Bessel beam parameters.     

Determination of the electron concentration and temperature,as well as the reduced electric field strength,in the plasma of a high-voltage nanosecond discharge initiated in atmospheric-pressure nitrogen by a runaway electron beam

We report on the results of spectroscopic measurements of electron concentration N _e and temperature T _e , as well as the reduced electric field strength E/N in the plasma of a high-voltage nanosecond discharge in the gap with a strongly nonuniform electric field distribution, which is filled with nitrogen under the atmospheric pressure. The possibility of using the method for determining T _e and E/N, which is based on the determination of the ratio of the peak intensities of the ionic N ₂ ⁺ (λ = 391.4 nm) and molecular N₂ (λ = 394 nm) nitrogen bands, is proved. We detected the mean values of quantities N _e , T _e , and E/N amounting to ～2 × 10¹⁴ cm^?3, ～2 eV, and ～240 Td, respectively. In addition, the dynamics of these quantities is determined.     

NMR spin lattice relaxation in dilute CuFe alloys with impurity interactions

Previous measurements by Wilkening and Hesse have shown, that the excess relaxation rate ΔT^-1₁ of the matrix nuclei in $\text{CuF}$e dilute alloys can be explained in terms of the LD-model with rapid spin diffusion. Measurements reported in this paper confirm the existence of an electric quadrupole diffusion barrier. It could be shown that the influence of the quadrupole barrier is coupled to large clusters within the alloy. The electron spin lattice relaxation time τ₁ behaves temperature independent in the range 30 K ? T ? 300 K. This can be understood if an effective correlation time τ is introduced, which results from a distrubution of temperature dependent times τ^cl(T) belonging to clusters of different size.     

Carrier concentration dependence and temperature dependence of mobility in silicon (100) N-channel inversion layers at low temperatures

The carrier concentration (N_s) dependence of electron mobility in Si (100) inversion layers has been measured at temperatures T = 1.5?70K for high- and low-mobility MOSFETs. An extrinsic term is observed in the T-dependent part of the scattering probability, τ^?1_T. At T = 4.4 K, τ^?1_T depends on N_s as N^?1.9_s in low mobility samples. In high-mobility samples, τ^?1_T increases with increasing N_s in high N_s region while τ^?1_T ∝ N^?1.6_s in low N_s region. The N_s-dependence of τ^?1_T becomes weaker with increasing T in both of low- and high-mobility samples. At N_s = 3 × 10¹² cm^?2, τ^?1_T depends on T as T^1.8 in low-mobility samples and τ^?1_T ∝ T^2.0 in high- mobility samples at T 5 K.     

Mössbauer hyperfine spectra of DyCo2Si2

Mössbauer spectra of¹⁶¹Dy in DyCo₂ Si₂ were taken between 4.2K and 78K. The tetragonal intermetallic has a Neel temperature of T_N=21K. Up to 25K spectra are characterized by extremely slow electronic relaxation, precluding the usual collapse of hyperfine splitting on approaching T_N. Between T_N and 78K relaxation spectra are seen. The most unusual feature is a slow, steady decrease of B_hf and e²qQ with temperature. It is suggested that this arises from changes in the wave function of the electronic ground state by influences of the molecular and the crystalline electric fields.     

Quasiparticle lifetime of electron–electron interactions for two-dimensional electron gases with magnetic field

We theoretically study the electron–electron scattering rate τ_ee⁻¹for electrons in a two-dimensional electron gas with a perpendicular magnetic field, within theGWand plasmon-pole approximations, as functions of temperatureT, impurity scattering rate Γ and magnetic fieldB. The τ_ee⁻¹increases with increasingTand increasing Γ, and shows the structure of the Landau levels asBis changed.     

Temperature-dependent Brillouin scattering studies of surface acoustic modes in Nd0.5Sr0.5MnO3

Brillouin scattering experiments are carried out to study the surface acoustic waves in Nd_0.5Sr_0.5MnO₃ as a function of temperature in the range of 40-300 K covering the metal-insulator and charge-ordering phase transitions. The surface modes include surface Rayleigh wave, pseudo-surface acoustic wave (PSAW) and high velocity PSAW. The observed softening of the sound velocities for the surface modes below paramagnetic to ferromagnetic transition, T_c is related to the softening of the C₄₄ elastic constant. The subsequent hardening of the sound velocity below the charge ordering transition temperature T_co is attributed to the coupling of the acoustic phonon to the charge ordered state via long range ordering of the strong Jahn-Teller (JT) distortion.     

双温度氦等离子体输运性质计算

获得覆盖较宽温度和压力范围内的等离子体输运性质是进行等离子体传热和流动过程数值模拟的必要条件.本文采用Saha方程计算等离子体组分, 采用基于将Chapman-Enskog方法扩展到高阶近似的方法, 计算获得了电子温度(T_e)不等于重粒子温度(T_h)的情形下, 在300 K到40000 K的温度范围内氦等离子体的黏性、热导率和电导率. 研究结果表明压力和热力学非平衡参数(θ =T_e/T_h)对氦等离子体的输运性质有较大的影响. 在局域热力学平衡条件下,计算获得的氦等离子体输运性质和文献报道的数据符合良好.     

A theory of magnetism for semi-metallic uranium compounds

A theoretical study is carried out to explain the magnetic properties of uranium compounds of NaCl, anti-Cu₂Sb and Th₃P₄ type. The electronic model used is a modified free electron model along the lines of the band structure for NaCl type uranium compounds previously reported. An exchange interaction via the conduction electrons is assumed for the mechanism of magnetic ordering. The molecular field approximation is used to calculate θ, T_N and the exchange interaction constants. The stability range of various magnetic ordering states and the variation of θ, T_N and exchange interaction constants are obtained as functions of lattice parameter. These results well explain the experimental data.     

On multiple Compton scattering in plasma clouds

Inverse Compton scattering of low energy photons in a nonrelativistic electron gas is considered. The angle dependence in the Thomson cross section is neglected and spatial and energy transport are separated in a multiple scattering development of the emerging spectrum. The energy transport is determined by a Green function G which may be obtained from the single scattering spectrum for small optical depth or from the Kompaneets equation in the optically thick medium (τ ? 1). The electron cloud is assumed to be spherical and homogeneous with constant temperature $\text{?}{}_{\mathrm{e}}\text{=}\text{kT}{}_{\mathrm{e}}\text{m}{}_{\mathrm{e}}\text{c}{}^2$. Photon escape probabilities P_N from the cloud after N scatterings are calculated from a random flight problem with absorbing walls and alternative methods are mentioned and compared in the limit of large optical depth.     

Theory of the spectral acoustic phonon emission intensity of hot 2D electrons in quantized n-inversion layers

The spectral acoustic phonon emission intensity of the hot quasi two-dimensional electron gas (2DEG) in quantized n-Si (GaAs) inversion layers is calculated as a function of the phonon angular frequency w at different values of the carrier temperature T_e and density N_s. In the long wave length limit (ℏw ⪡ k_BT_e) the emission intensity increases ∝ w^s(w^s+1) for bulk- (surface-) modes where s = 3 for the unscreened acoustic deformation potential coupling. At w ≈ v_j2k_F (v_j: sound velocity of the phonon mode j, k_F: radius of the Fermi-circle) the emission intensity reaches a maximum whose position is shifted to higher w-values if N_s increases. For given values of N_s, T_e, T (lattice temperature) and ϑ (emission angle) the emission intensity maximum of the n-GaAs inversion layer is found to be about one order of magnitude smaller than the intensity maximum of the n-Si inversion layer.