Visible light transmission properties of double metal thin gold films with sub-wavelength hole arrays

The transmission spectrum of linearly polarized visible light through double metal thin films perforated with nano-hole arrays is investigated and simulated by using the three dimensional finite-difference time-domain method. The results show that the transmission spectra can be controlled by changing the longitudinal interval G between films and, their lateral displacements L_x and L_y, which are parallel and perpendicular to the polarization direction of the incident light, respectively. We have two important peaks (due to guided mode and SP mode) in these spectrums. The variation in longitudinal distance results a wavelength shift in guided mode peak of transmission spectrum while the wavelength of SP mode peak remains fixed. The lateral displacement L_x leads to the higher transmission of the guided mode peak, while the lateral displacement L_y suppresses the transmission of this peak. Here we try to discuss the physical explanations of these spectral behaviours by surface plasmon waves on the metal films and by using the concepts of surface plasma (SP) and guided modes in our double metal structure.     

Raman scattering of Zn1−xCdxS mixed crystals

The Raman spectra of Zn_1?xCd_xS crystals are studied. The narrow peak between TO (Γ) and LO (Γ) lines at x ? 0 is due to deffect-induced first order scattering. The anomalously intense peak in the same spectral region at x ? 1 is supposed to be result of resonance interaction between LO (Γ) phonon and quasilocalized vibrations.     

Room-temperature electrosynthesized ZnO thin film with strong (0 0 2) orientation and its optical properties

ZnO thin film with strong orientation (0 0 2) and smooth surface morphology was electrosynthesized on ITO-coated glass substrate at room temperature under pulsed voltage. Photoluminescence (PL) shows two obvious peaks: violet band and strong green band. The former is due to the free-excitonic transition and the latter is believed to arise from the single ionized oxygen vacancy (V_O⁺). Raman scattering reveals that the 580 cm⁻¹ mode and the shoulder peak mode at 550 cm⁻¹ originate from the N-related local vibration mode (LVM) and E₁ (LO) mode, respectively.     

Raman spectra of a coupled LO phonon-damped plasmon mode in n-GaAs

It is shown that recently observed spectra of Raman scattering from a coupled longitudinal optical (LO) phonon-damped plasmon mode in n-GaAs can be reproduced theoretically by taking into account the Landau damping of the mode itself as well as a distribution of wave number of laser light due to the attenuation of light near the surface.     

Zone edge phonons in CdS1−xSex

Zone edge phonons of mixed CdS_1?xSe_x have been studied by mean of infrared absorption and Raman scattering techniques. In the A point of the Brillouin zone, it has been shown that transverse acoustical phonons have a one mode behaviour, and that optical phonons have a two modes behaviour. CdS and CdSe zone center phonons can combined and give a LO(CdS) + LO(CdSe) Raman peak in addition to the 2LO(CdS) and 2LO(CdSe) peaks; this is not the case for phonons from the edge of the Brillouin-zone where no CdS + CdSe combination can take place.     

Resonance Raman scattering in InAs near the E1 gap

Measurements of resonance Raman scattering in InAs at 77°K near the E₁ gap have been extended to 2.73 eV. The peak in the resonance curve appears at about 2.66 eV, 70 meV above the optical gap, and gives a larger temperature shift of the resonance than previously reported. Resonance lineshapes are obtained for allowed TO and LO and for forbidden LO phonon scattering. The forbidden scattering intensities are consistent with selection rules predicted for linear q-dependent and/or surface electric field induced scattering mechanisms.     

基于拉曼光谱技术的光栅耦合结构半导体激光器的可靠性分析

光栅耦合结构的半导体激光器在自由空间光通信、卫星间通信、激光雷达测距、大气环境检测以及医学成像等领域有着广泛的应用前景。为了分析光栅耦合结构的半导体激光器的可靠性,本文基于拉曼光谱技术,对光栅耦合结构的半导体激光器在不同的制备阶段及其成品进行了检测。我们发现,对于未进行任何工艺加工的半导体激光器芯片,GaAs纵向(LO)光学光子模式的振动强而横向(TO)光学光子模式的振动弱;当在GaAs芯片表面生长一层SiO₂膜后,LO模式向长波数方向移动,强度没有变化。当在生长SiO₂膜的GaAs芯片上刻蚀100 μm的台面后,GaAs的LO模式的振动减弱而TO模式的振动加强,且峰出现宽化现象;在100 μm的台面上刻蚀光栅后,GaAs的LO模式的振动继续减弱而TO模式的变得更强,这说明在光栅耦合激光器的制备工艺过程中引入了缺陷。通过与无光栅的半导体激光器进行对比测试,光栅耦合结构半导体激光器无论出光面上有无缺陷,其拉曼光谱均有缺陷峰存在,进一步证明了在光栅结构的制备过程中,引入了应变或者缺陷,对其可靠性产生了影响,导致光栅耦合结构的半导体激光器可靠性降低。     

高质量ZnO及BeZnO薄膜的发光性质

用分子束外延设备插入缓冲层在c面蓝宝石上生长得到高质量ZnO和BeZnO薄膜。XRD测试显示薄膜具有六方结构和c轴取向,并具有良好的晶体质量,其中ZnO薄膜的半高宽仅为108 arcsec,Be_xZn_1-xO薄膜的半高宽小于600 arcsec。对ZnO和BeZnO薄膜的拉曼光谱进行对比研究发现,随着Be元素的掺入,A₁(LO)、A₁(2LO)声子模频率往大波数方向移动,并且首次发现了与Be元素掺杂有关的局域振动模。利用变温光致发光光谱研究了薄膜的发光性质,结果显示ZnO薄膜室温光致发光只出现一个紫外发发光峰(378 nm),而低温光谱(80 K)则出现了很强的自由激子发光峰。随着温度的升高,束缚激子发光逐渐湮灭向自由激子发光转变,并且峰值位置红移。相对于ZnO薄膜,BeZnO薄膜的紫外发光主峰位置蓝移,并且由于Be元素的掺入导致薄膜晶体质量下降,在低温(80 K)光致发光光谱中没有出现强的自由激子发光峰。另外,在低温光致发光及拉曼光谱中,主峰位置在100~200 K之间有局部最大值,推测为由于合金晶格热膨胀系数失配而引起的应力效应。     

Raman spectroscopy of pseudomorphic Si0.989C0.011/Si superlattices

Raman spectroscopy is used here to study pseudomorphic Si_0.989C_0.011/Si superlattices grown by molecular beam epitaxy. The high crystalline quality of the samples was tested by a high resolution X-ray diffraction experiment. The lineshape of the LO Si-Si peak shows an asymmetry, which correlates with the increase of the alloy layer width. The Raman spectra show three additional peaks in the high energy side above the LO mode of Si. One of them is due to the local vibration of the C substitutional atoms, and the other two can be attributed to the formation of short range order with C atoms occupying second and third nearest-neighbor places. On the low energy side of the LO Si-Si mode, we have observed two other peaks associated with the relaxation of the Si atoms around the substitutional C. Although the X-ray experiments show clear evidence of superperiodicity, no indication of the superlattice formation could be observed in the parallel polarized Raman spectra, where the folded acoustic modes are allowed.     

Resonance Raman study of He+ ion implanted nanostructured ZnS

ZnS nanocrytsals of size ∼2.5 nm were prepared by chemical precipitation technique. Pressed pellets of nanostructured ZnS were implanted with He⁺ ions at doses of 5 × 10¹⁴, 1 × 10¹⁵ and 5 × 10¹⁵ ions/cm². Raman spectra of both unimplanted and He⁺ ion implanted samples were recorded with ultraviolet (UV) excitation. LO, 2LO, 2TO, (LO + TA) and (2TO − TA) modes of ZnS were observed in the resonance Raman spectra of the unimplanted nanostructured ZnS samples. In addition, a surface mode was observed at 294 cm⁻¹. With the implantation of He⁺ ions, the 2TO mode disappeared and 2LO mode became prominent and this observation was attributed to the decrease in band gap of ZnS nanocrytsals due to ion implantation. The exciton–LO phonon coupling strength was determined from the intensity ratio of 2LO to LO modes and it was observed that the exciton–LO phonon coupling strength increases with increase in implantation dose. In the present work, we report for the first time the observation of 2TO mode in the resonance Raman spectrum of nanostructured ZnS and also the modification of exciton–LO phonon coupling strength of semiconductor nanoparticles by ion implantation. Copyright © 2008 John Wiley & Sons, Ltd.     

Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlattices

Laser excited hot electrons in GaAs relax by LO phonon emission within a few hundred femtoseconds, leading to a series of peaks in the distribution of hot electrons in the conduction band, which we observe in luminescence. We find that the luminescence peaks shift according to the acceptor binding energy for C?, Ge?, Zn?, and Be-p-doped GaAs layers grown by MBE and LPE. Thus we prove that recombination is between hot electrons and neutral acceptors. The series of peaks due to electrons from the heavy hole band agree well with $\text{k}\text{.}\text{p}$ band structure, while peaks due to those from light holes are about 15 meV lower than expected from the band structure. We show that the discrepancy is not due to heating or surface fields. The peak separation in the luminescence ladder is about 6% larger than the LO energy suggesting emission of renormalised LO phonons. We find thermalisation by LO emission also in GaAs nipi doping superlattices. In nipi crystals the emission is shifted to higher energies (by 12 meV for light and by 6 meV for heavy holes) due to a change in band structure caused by the space charge fields.     

Effect of hydrostatic pressure on the second order Raman spectrum of GaP

Measurements of the effect of hydrostatic pressure on the major features in the second order Raman spectrum of GaP are reported. The entire second order spectrum is decomposed into its irreducible symmetry components. The mode Grüneisen parameter for the TA (X> → K) phonons is negative and the parameters for TO(L) and LO(Σ) are somewhat larger than those at the center of the zone. Finally, we observe that the shift under pressure of the 2LO(Γ) structure is slightly less than twice the first order LO(Γ) shift.     

Elastic and inelastic tunneling of photoelectrons from the dimensional quantization band at a p +-GaAs-(Cs,O) interface into vacuum

The photoemission of electrons from a p ⁺-GaAs surface with negative electron affinity was studied experimentally at 4.2 K. A narrow peak and its phonon replicas were observed in the distribution of emitted electrons over the energies of longitudinal motion. These replicas are caused by elastic and inelastic electron tunneling from the bottom of the dimensional quantization band in the near-surface spatial-charge region through the potential barrier of the (Cs,O) activating coverage with emission of LO phonons. The measured position of the peak corresponding to elastically tunneling electrons is close to the calculated one.     

Optical Characterization of Donor Doped Ternary Alloy Ga1-xNxAs and GaN-Ga1-xNxAs MQW by Using Infrared Fourier Transform Spectroscopy

In this work polarized infrared Fourier transform spectroscopy is employed to study the electronic and optical properties of doped Ga_1-xN_xAs ternary alloy and GaN-Ga_1-xN_xAs MQW. We have analyzed the far infrared spectra of GaN-GaNAs MQW by using a simple macroscopic theory base on effective medium approximation model. The dispersion curve of coupled LO phonon- plasmon modes were calculated from the polarized infrared reflectivity data. The GaNAs layer shows two-mode behavior in the infrared spectral range, a GaAs-like and a GaN-like sublattices. We detect the transverse optic phonon of GaN sublattice around 475 cm^-1. The origin of the sharp feature in p-polarization reflectivity about 300 cm^-1 as well as the dip at LO phonon frequency of GaAs sublattice are due to Brewster mode. The Brewster mode is couple strongly to plasmon mode. Attenuated total reflection spectroscopy has been used to excite and investigate surface plasmon and surface polariton.     

Electron energy loss spectroscopy of sodium covered Ge(111) surfaces

The ELS spectra of sodium covered Ge(111) surfaces are studied. It was found that sodium coverage upto 1 ML leads to a extinction of the ELS features of the clean Ge surface. With increasing sodium coverage a metal induced peak at 3.4 eV and a peak at 31.6 eV due to a sodium 2p-core level transitions appear. ELS spectra of a heat-treated surface covered with sodium imply a formation of a surface Na-Ge “compound” as a result of Na-Ge interdiffusion.     

Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E.

We analyzed using the Raman technique a series of single quantum wells of InAs/In _0.53Ga_0.47As at different thicknesses of InAs layer grown on a (100) InP substrate by MBE. These high lattice mismatch systems are particularly interesting for potential applications in the mid-IR wavelength range. The well thickness was between 6 and 12 monolayers. The In _0.53 Ga_0.47As grown on an InAs layer is subject to a tensile biaxial strain and the InAs to a compressive one. In the Raman spectra we observed an intense narrow line corresponding to the LO phonon of the InAs layer between a GaAs-like LO mode and a smaller InAs-like LO phonon typical of In_0.53Ga_0.47As. With the increase of the well thickness the experimental energy shift of the LO phonon of the InAs layer decreases, indicating a smaller strain, whereas the GaAs-like LO phonon of the alloy remains constant and the intensity ratio of these two modes becames smaller. The dominant and sharp features of the InAs LO and GaAs-like LO characterize the good quality of our structures. With the increase of the InAs layer thickness we also observed the appearance and the intensity rise of a weak peak around the frequency of the InAs TO mode. This peak could be associated with the TO mode that is forbidden in our scattering geometry. We believe that this is indicative of a slight deterioration of the structural perfection of the sample with the increase of the well thickness. To our knowledge, this is the first study of vibrational properties of InAs/In _0.53 Ga_0.47As single quantum wells grown on InP substrates.     

Raman study of InAs quantum dots on GaAs/InP grown by low pressure metal-organic chemical vapor deposition

Raman spectra of InAs quantum dots (QDs) on InP substrate were investigated. Both longitudinal-optic (LO) and transverse-optic (TO) frequency of InAs QDs showed a large blue-shift comparing to its bulk due to the compressive strain in InAs QDs. Raman scattering of InAs QDs with a thin GaAs interlayer was studied. We obtained that the peak position of LO and TO mode of InAs QDs became larger blue-shifted when we inserted the GaAs layer. At the same time, we found a red-shift of the frequency of GaAs LO mode because of tensile strain. Theoretical calculation was performed and its prediction coincided with our experiment results well. They both showed that strain played an important role in formation of InAs QDs.     

Raman characterization of passivated GaAs surfaces

The technique of Raman scattering at room temperature, is used to investigate the effect of H₂S passivation of the surface of n-type GaAs. Well-defined LO, L^- and L⁺ features are distinguished in spectra which have been recorded in z(x, y)[ovbar|zovbar] scatte ring orientation. It is observed that the ratio of the LO to L^- peak is reduced by the effects of the passivation process and that the shift of the L⁺ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L^- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.     

Low temperature Raman study on the site symmetry of ZnSe:P

Raman spectra of phosphorous doped ZnSe are recorded from 9 to 300 K. In addition to TO mode at 208 cm⁻¹ and LO mode at 253 cm⁻¹, a new mode around 240 cm⁻¹ is observed between 55 and 270 K. The spectra at lower and higher temperatures do not show the new mode. This new mode confirms that there is a reduction of (Se site) symmetry from T_d to C_3v when P substitutes for Se. This is due to Jahn Teller distortion.     

多原子半无限晶体中表面极化子的内部激发态

研究多原子半无限晶体中电子与表面光学(SO)声子耦合强,而与体纵光学(LO)声子耦合弱的极化子的激发态性质.采用线性组合算符和幺正变换方法导出与SO声子耦合强而与LO声子耦合弱情形下极化子的基态能量、第一内部激发态能量和激发能量.结果表明,多原子半无限晶体中与SO声子耦合强,而与LO声子耦合弱的极化子的基态能量、第一内部激发态能量不仅包含不同支LO声子和不同支SO声子与电子耦合的能量,而且也包含不同支SO声子之间相互作用贡献的附加能量.激发能量与体纵光学声子无关.