Photo conductivity of condensed electrons in the dilute metal N-type Hg0.8Cd0.2Te

We have measured time resolved photo conductivity in n-type Hg_0.8Cd_0.2Te above the magnetic quantum limit. In this dilute metal the low temperature magneto-transport is governed by a thermally activated mobility of the electrons, behaving like a viscous liquid of molecules or atoms. Photo conductivity proved to represent a valuable method to obtain information on electron correlation time, on the carrier density and on the recombination time of dondensed electrons.     

Fracture mechanisms of Hg0.8Cd0.2Te induced by pulsed TEA-CO2 laser

The fracture mechanisms of Hg_0.8Cd_0.2Te induced by pulsed TEA-CO₂ laser have been investigated theoretically and experimentally in this paper. The Hg_0.8Cd_0.2Te target was irradiated by a TEA-CO₂ laser with wavelength of 10.6 μm and spike width of 240 ns in an ambient atmosphere. The evident cracks can be found on the surface of the target from the scanning electron microscopy (SEM) photos, indicating that the severe breaks happened during the experiment. Theoretical analysis has also been carried out and the results show that the fracture of Hg_0.8Cd_0.2Te is mainly induced by thermal stresses, although there are three forces (thermal stress, evaporation wave and laser-supported detonation (LSD) wave) exerted on the target surface during the process.     

Sputter cleaning and dry oxidation of CdTe,HgTe, and Hg0.8Cd0.2Te surfaces

The analyses of CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces by XPS and LEED after Ar⁺ sputtering and after the subsequent onset of a dry oxidation are described, and a quantitative evaluation of the XPS spectra is attempted. The results are: Ar⁺ sputtering yields a perfect unreconstructed CdTe surface of stoichiometric composition, whereas the composition of sputtered HgTe and Hg_0.8Cd_0.2Te surfaces generally deviates from the stoichiometry of the respective compound. This deviation is a function of the energy of the Ar ions (1 to 15 keV) and is characterized by an increasing deficit in Hg as the ion energy is raised. The Hg deficit of sputtered Hg_0.8Cd_0.2Te surfaces is substitutionally compensated by an equivalent increase in Cd, and due to this substitution the resulting surfaces are sufficiently ordered to display a distinct LEED pattern. The oxidation of sputtered CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces in an O₂ atmosphere is an extremely slow process. Therefore, the surfaces to be oxidized were additionally exposed to UV radiation (low pressure mercury lamp), and due to UV generated ozone as an oxidizing agent ultrathin native oxide layers of up to 15 Å thickness were readily obtained. The predominant constituents of these native oxide layers on Hg_0.8Cd_0.2Te are concluded to be CdTeO₃ and TeO₂.     

Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates

Passivation treatment on indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg_0.8Cd_0.2Te layers. Room-temperature capacitance–voltage measurements clearly revealed metal-insulator–semiconductor (MIS) behavior for the Al/ZnS/passivated Hg_0.8Cd_0.2Te layer/Cd_0.96Zn_0.04Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te diode with a sulfur-treated Hg_0.8Cd_0.2Te layer were smaller than those with a chemically oxidized Hg_0.8Cd_0.2Te layer. The interface state density at the ZnS/sulfur-treated Hg_0.8Cd_0.2Te interface were low at 10¹¹ eV⁻¹ cm⁻² at the middle of the Hg_0.8Cd_0.2Te energy gap. These results indicate that the Hg_0.8Cd_0.2Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg_0.8Cd_0.2Te layers can be used for Hg_1−xCd_xTe-based MIS diodes and MIS field-effect transistors.     

Transport properties of photo-excited carriers in slightly compensated Hg0.785Cd0.215Te

Photo-Hall measurements are presented for slightly compensated n-type Hg_0.785Cd_0.215Te at 4 K where the electron mobility is limited by charged scattering centers. Using a 10.6 μm laser as the optical source, we observe that the electron mobility passes through a maximum as a function of photo-excited carrier density. Mobility expressions based on the Kane-band model are modified to incorporate neutralization of charged scattering centers by photo-excited carriers. Calculated mobility values are found to be in satisfactory agreement with the data. The observed decrease in mobility for high carrier densities is attributed to electron-hole scattering. The mobility enhancement at lower carrier densities is explained in terms of neutralization of charged acceptors.     

Raman scattering from (110) Hg0.8Cd0.2Te.

We report the first polarization dependent Raman scattering from the (1$\text{1}$0) surface of Hg_0.8Cd_0.2Te. In addition to the “HgTe-like” and “CdTe-like” transverse and longitudinal $\text{(}\text{q}\text{=0)}$ optical modes, we have observed a “clustering mode” [Γ₁ symmetry], a feature due to a coupled LO phonon-intersubband excitation in the surface inversion layer and a symmetry forbidden TO feature which may be related to internal strain. The previously reported “defect mode” was not observed.     

Interband magnetoreflection of Hg1 − χCdχTe

Interband magnetoreflection experiments on Hg_0.84Cd_0.16 Te give a valence band effective mass of 0.3 m₀ appropriate to the (100) plane. The Γ₆ - Γ₈ separation is slightly negative at 4°K and slightly positive at 77°K. About twenty magnetooptical transitions are seen and indicate a high level of homogeneity for this material.     

Two-mode resonant polaron in the Hg0.72Cd0.28Te semiconductor

A two-mode polaron behavior is observed in the mixed crystal Hg_0.72Cd_0.28Te at magnetic fields corresponding to ω_c = ω_L1 and ω_c = ω_L2 resonances. Consistently including the small-gap structure of energy bands and a multi-mode dielectric formulation we can quantitatively describe our observations.     

Saturation effects in the photoluminescence spectra of Hg0.3Cd0.7Te

The photoluminescence spectrum of Hg_0.3Cd_0.7Te at 77K consists of a narrow, high energy free exciton line D and a broad, low energy deep level E. As a function of incident excitation power, the E line must be saturated before the D line can be observed. We have constructed a simple model that agrees well with the experimental dependences of the luminescence intensities of the D and E lines on excitation power.     

B在Hg0.75Cd0.25Te中掺杂效应的第一性原理研究

基于密度泛函理论的第一性原理方法,通过形成能和束缚能的计算研究了B在Hg_0.75Cd_0.25Te 中的掺杂效应.结果表明B在Hg_0.75Cd_0.25Te中存在着两种主要形态:第一种是在完整的 Hg_0.75Cd_0.25Te材料中B稳定存在于六角间隙位置而非替位.此时,B形成容易激活的三级施主使材料表现为n型.另一种是在有Hg空位存在的Hg_0.75Cd_0.25Te中B更容易与Hg空位结合形成缺陷复合体,其束缚能达到了0.96 eV.这种复合体在Hg_0.75Cd_0.25Te材料中形成单施主也使材料表现为n型.考虑到辐照损伤形成的Hg空位受主,这种B与Hg空位的复合体是制约B离子在MCT中注入激活的一个重要因素.     

高x值混晶Hg1-xCdxTe光吸收边的压力效应

采用金刚石对顶砧高压装置,在0—36kbar流体静压力范围和室温条件下测量了高x值的P型碲镉汞混晶Hg_0.3Cd_0.7Te光吸收边及其随压力的变化。300K下Hg_0.3Cd_0.7Te光学能隙的实验值与用经验公式的计算值一致。用最小二乘法拟合不同压力下的实验结果,得到Hg_0.3Cd_0.7Te能隙的一阶压力系数α=8.7×10^-11eV/Pa,与用化学键介电 关键词：     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry

The deviations from the stoichiometric composition of HgTe and Hg_0.82Cd_0.18Te crystals have been controlled by heat treatment under Hg vapor pressure. The magnetic field dependence of the Hall coefficient always shows the presence of two different sets of electrons and one set of holes. A low mobility electron is shown to belong to the conduction band. Vapor pressure dependence of hole concentration in HgTe shows that the concentration of nonstoichiometric defects decreases with increasing Hg vapor pressure, but the hole concentration is always higher than the electron concentration. In the case of Hg_0.82Cd_0.18Te, the electron concentration exceeds the hole concentration at high Hg vapor pressures. The dependence of the conduction band electron mobility in HgTe upon carrier density shows that the scattering by holes and impurities is predominant. In Hg_0.82Cd_0.18Te, however, optical phonon scattering is dominant when the deviation from stoichiometry is small and the effect of residual impurities can be neglected, and scattering by holes is dominant when the hole concentration is over $\text{10}{}^{17}\text{cm}{}^3$.     

Zn0.04Cd0.96Te中深能级的红外光电导谱研究

应用红外光电导谱研究半绝缘p型Zn_0.04Cd_0.96Te中的深能级,在温度从4.2到165K范围内,观察到了位于0.24,0.34,0.38,0.47,0.55和0.80eV处6个光电导响应峰.结合4.2K下光致发光谱的测量结果以及对Zn_xCd_1-xTe中深能级发光光谱、深能级瞬态谱等已有的研究结果,对这些响应峰对应的深能级特性进行了讨论 关键词： xCd_1-xTe')" href="#">Zn_xCd_1-xTe 光电导 杂质 深能级     

A comparative study on Zn0.8Cd0.2O films deposited on different substrates

Highly (0 0 2)-oriented Zn_0.8Cd_0.2O crystal films were prepared on different substrates, namely, glass, Si(1 1 1) and α-Al₂O₃(0 0 1) wafers by the dc reactive magnetron sputtering technique. The Zn_0.8Cd_0.2O/α-Al₂O₃ film has the best crystal quality with a FWHM of (0 0 2) peak of 0.3700°, an average grain size of about 200 nm and a root-mean-square surface roughness of about 70 nm; yet the Zn_0.8Cd_0.2O/glass holds the worst crystal quality with a much larger FWHM of 0.6281°. SIMS depth profile shows that the Zn and O compositions change little along the film depth direction; the Cd incorporation also almost holds the line towards the top surface other than an accumulation at the interface between the film and the substrate. The Cd content in the film is nearly consistent with that in target.     

Electronic anomalous mass near the resonant acceptor level E2 from Shubnikov-de Haas measurement in Hg0.82Cd0.18Te

Shubnikov-de Haas measurements on Hg_0.82Cd_0.18Te samples at 1.8 and 4.2 K temperature are reported. The obtained effective mass is compared with the one calculated from the non-parabolic model. The discrepancy between the two values is attributed to the presence of the E₂ resonant acceptor level. The density of states induced by this virtual level in the conduction band, is strongly dependent on stoichiometry and can be adjusted by thermal annealing.     

Electrical properties of n-type GaS single crystals

Hall effect and Thermally Stimulated Currents (TSC) measurements have been carried out with the current flowing perpendicular to the c-axis on n-GaS crystals grown both from the melt by the Bridgman-Stockbarger method and from the vapour by chemical transport with iodine. An impurity hopping conduction with an activation energy of 0.2 eV has been evidenced in the range of temperatures between 200 and 300 K. The results of TSC measurements indicate the iodine as being responsible for a donor level at 0.44 eV from the conduction band.     

Electrical properties of n-type vapor-grown gallium nitride

Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al₂O₃ layers with 298 K carrier concentrations (n-type) between 1·4×10¹⁷cm^?3 and 9×10¹⁹ cm^?3. Then n～10¹⁷ cm^?3 crystals (undoped) have mobilities up to μ～440 cm²/V sec at 298 K. Their conduction behavior can be described by a two-donor model between 150 and 1225 K and by impurity band transport below 150 K. Crystals with n≥8×10¹⁸ cm^?3 show metallic conduction with no appreciable variation in n or μ between 10 and 298 K.Results of mass spectrographic analyses indicate that the total level of impurities detected is too low to account for the observed electron concentration at the n～10¹⁹ cm^?3 level, and suggest the presence of a high concentration of native donors in these crystals. No significant reduction in carrier concentration was achieved with Zn doping up to concentrations of ～10²⁰ cm^?3 under the growth conditions of the present work, and no evidence was found to indicate that high conductivity p-type behavior may be achieved in GaN. The influence of factors such as growth rate, crystalline perfection and vapor phase composition during growth on the properties of the layers is described.     

Free-carrier absorption in p-type Pb0.79Sn0.21Te

Results are presented of the room-temperature absorption coefficient (α) of Pb_0.79Sn_0.21Te (p_77K = 2 × 10¹⁶-6 × 10¹⁷cm^-3) in wavelength (λ) range 6–15 μm. At long wavelengths α exhibits a λ² dependence, in agreement with the classical free-carrier absorption expression, and in this region α is proportional to carrier density.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.