NMR of 69Ga, 71Ga,and 51V in V3−xFex Ga alloys

We have studied at room temperature the intensities and the Knight shifts of the nuclear magnetic resonances of ⁶⁹Ga, ⁷¹Ga, and ⁵¹V in V_3?xFe_xGa for Fe concentrations ranging from x = 0.04 to x = 0.6. The results interpreted in terms of a redistribution of the conduction electrons and a paramagnetism due to the Fe impurities.     

Kβ2 X-ray emission bands of Ga and As and their compounds

Ga and As Kβ₂ emission bands of the compounds under study consist of a more or less pronounced Kβ₂ main band, a short-wavelength side band which according to calculations by the ‘sudden approximation’ method may be essentially assigned to a KM_IV,V → M_IV,VN_II,III satellite, and long-wavelength 3d → 1s bands. Compounds such as Ga₂(SO₄)₃, Ga(NO₃)₃, Ga₂O₃, NaH₂AsO₄, K₃AsO₄, and As₂O₃ also show long-wavelength side-maxima at a distance of about 12 and 15 eV, respectively, from the main band, which are due to electron transitions from bands or levels with a preponderant 0 2s character.The Kβ₂ main band of A^IIIB^V compounds is less pronounced owing to the widths of the K levels and to instrumental distortions. The distance between the maxima of the state density of the upper valence bands can be recognized only by a shoulder or asymmetry of the band at the long-wavelength side. By calculation of the Ga and As Kβ₂ bands in GaAs with a pseudopotential kp band structure method, and allowing for the influence of both the transition probability and instrumental distortion excellent agreement with experiment is obtained.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique

This study examined the effects of Ga content in the CIGS absorber layer on the properties of the corresponding thin films and solar cells fabricated using a co-evaporation technique. The grain size of CIGS films decreased with increasing Ga content presumably because Ga diffusion during the 2nd stage of the co-evaporation process is more difficult than In diffusion. The main XRD peaks showed a noticeable shift to higher diffraction angles with increasing Ga content, which was attributed to Ga atoms substituting for In atoms in the chalcopyrite structure. Band gap energy and the net carrier concentration of CIGS films increased with Ga/(In + Ga) ratios. Regarding the solar cell parameters, the short circuit current density (J_SC) decreased linearly with Ga/(In + Ga) ratios due to the lack of absorption in the long-wavelength portion of the spectrum, while the open circuit voltage (V_OC) increase with those. However, V_OC values at high Ga/(In + Ga) regions (>0.35) was far below than those extrapolated from the low Ga contents regions, finally resulting in an optimum Ga/(In + Ga) ratio of 0.28 where the solar cell showed the highest efficiency of 15.56% with V_OC, J_SC and FF of 0.625 V, 35.03 mA cm⁻² and 0.71, respectively.     

Beta-decay branching ratios of 62Ga

Beta-decay branching ratios of ⁶²Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyv?skyl?. ⁶²Ga is one of the heavier T _z = 0 , 0⁺ → 0⁺ β -emitting nuclides used to determine the vector coupling constant of the weak interaction and the V_ud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of ⁶²Ga . The branching ratio obtained, BR = 99.893(24) %, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed β -decay of ⁶²Ga .     

Electron density of states and superconducting Tc in A15-compounds

We compare the superconductivity parameters of V₃Ga and V₃Ge by the method of McMillan with the help of new neutron diffraction data obtained by P. Schweiss. We consider the strongly varying density of states in V₃Ga at the Fermi energy, a complication suggested by Labbé, Barisic, and Friedel. We find that increased electronic density of states contributes about equally with lattice softening to the enhancement of T_c in V₃Ga as compared to V₃Ge, although the values of N(O)J² = Mλ〈ω²〉 are roughly consistent with those obtained for some other metals by McMillan. The reason N(O) is not more effective in raising T_c is the partial compensation obtained from averaging over the narrow density-of-states peak which gives N ? 0.6N(O).     

High-spin states in68Ga

The⁶⁸Ga nucleus has been studied via the reactions⁶⁵Cu(α, nγ)⁶⁸Ga atE _α=12–21 MeV and⁶⁶Zn(α, p nγ)⁶⁸Ga atE _α=25–40 MeV. The level scheme has been established by means of relative yield functions, electronic timing measurements, prompt and delayedγ-γ coincidences, angular distributions and directional orientation coÏncidences. Spins up to 11⁺ were assigned to levels up to 4 MeV excitation and the higher ones were interpreted by coupling a⁶⁷Ga core with a (v 1 g_9/2) neutron.     

Preparation and characterization of Cu(In,Ga)(Se,S)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets

In this study, Cu(In,Ga)(Se,S)₂ (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se₂ (CIGS) quaternary alloy target and an In₂S₃ binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In₂S₃ (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10¹⁷ cm⁻³ and mobility of 1.2 cm² V⁻¹ s⁻¹. The resulting film exhibited p-type conductivity with a double graded band-gap structure.     

The hyperfine structure anomalies of67Ga,69Ga,71Ga,72Ga,113In,115In,and117mIn

The ratios of theg _i -factors of⁶⁹Ga and⁷¹Ga and of¹¹³In and¹¹⁵In have been measured by the NMR method. Using hyperfine interaction constants from literature, the hyperfine structure anomalies⁶⁷Δ⁶⁹,⁶⁹Δ⁷¹,⁷¹Δ⁷² of gallium and¹¹³Δ¹¹⁵,¹¹⁵Δ^117m of indium in the² P _1/2 and² P _3/2 atomic ground states have been calculated.     

Ga and Pt NMR study of UPtGa5

^69,71Ga and ¹⁹⁵Pt NMR/NQR measurements have been carried out for the 5f-antiferromagnet, UPtGa₅. From a NMR study using a single crystal sample, Knight shift measurements are reported for two different Ga sites and for Pt. The principal axes of the electrical field gradient tensor at both Ga sites have been determined and the values of the splitting parameter ν_Q and the asymmetry parameter η have been evaluated. The hyperfine coupling constants with the external field along various directions are also reported for the two Ga sites and Pt.     

Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs

We have calculated the thermal equilibrium concentrations of the various negatively charged Ga vacancy species in GaAs. The triply-negatively-charged Ga vacancy, V _Ga ^3– , has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium V _Ga ^3– concentration, , has been found to exhibit a temperature independence or a negative temperature dependence, i.e., the value is either unchanged or increases as the temperature is lowered. This is quite contrary to the normal point defect behavior for which the point defect thermal equilibrium concentration decreases as the temperature is lowered. This property provides explanations to a number of outstanding experimental results, either requiring the interpretation that V _Ga ^3– has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena.     

Study of nuclear quadrupole interactions and quadrupole Raman processes of Ga and Ga in a β-Ga2O3:Cr single crystal

Nuclear magnetic resonance (NMR) data and the spin–lattice relaxation times, T₁, of ⁶⁹Ga and ⁷¹Ga nuclei in a β-Ga₂O₃:Cr³⁺ single crystal were obtained using FT NMR spectrometry. Four sets of NMR spectra for ⁶⁹Ga (I = 3/2) and ⁷¹Ga (I = 3/2) were obtained in the crystallographic planes. The ⁶⁹Ga and ⁷¹Ga nuclei each had two chemically inequivalent Ga_I and Ga_II centers. Each of the ⁶⁹Ga and ⁷¹Ga isotopes yielded two different central NMR resonance lines originating from Ga_I and Ga_II sites. The nuclear quadrupole coupling constants and asymmetry parameters of ⁶⁹Ga_I, ⁶⁹Ga_II, ⁷¹Ga_I, and ⁷¹Ga_II centers in a β-Ga₂O₃:Cr³⁺ crystal were obtained. Analysis of the EFG tensor principal axes (PAs) for Ga nuclei and the ZFS tensor PAs for the Cr³⁺ ion confirmed that the Cr³⁺ paramagnetic impurity ion substitutes for the Ga³⁺ ion in the oxygen octahedron. In addition, the temperature dependencies of the ⁶⁹Ga and ⁷¹Ga relaxation rates were consistent with Raman processes, as T₁⁻¹ ∝ T². Even though the Cr³⁺ impurities are paramagnetic, the relaxations were dominated by electric quadrupole interactions of the nuclear spins in the temperature range investigated.     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.     

Slow transient response of Ge:Ga far-infrared photoconductors for space applications

Two slow transient times in the response of Ge:Ga photoconductors to photon influx are found to fit well to τ_a=τ_o(N_d/p₁) and τ_m=τ_o(S₁/p₁), derived by analyzing a two-region model, where τ_o is hole lifetime, N_d is the donor concentration, and p₁ and S₁ are concentrations of hole and space charge, respectively in the region near the metal–p⁺ ohmic contact. Both τ_a and τ_m are consistent with the response times observed in Ge:Ga photoconductors with Ga concentrations of 2×10¹⁴ cm⁻³ and 1×10¹⁴ cm⁻³ as well as in a stressed Ge:Ga photoconductor under low background photon influx at low temperatures: Those characteristic times are mainly determined by the compensation and carrier density in the crystal. We discuss the relation between the characteristic times proposed in this study and those theoretically derived by Westervelt and Teitsworth [R.M. Westervelt, S.W. Teitsworth, J. Appl. Phys. 57 (1985) 5457–5469], by Fouks [B.I. Fouks, Proc. ESA Symp. Photon Detectors for Space Instrumentation (ESA SP-356), 1992, pp. 167–174], and by Haegel et al. [N.M. Haegel, C.A. Latasa, A.M. White, Appl. Phys. A 56 (1993) 15–21; N.M. Haegel, C.R. Brennan, A.M. White, J. Appl. Phys. 80 (1996) 1510–1514]. As the compensation of Ge:Ga photoconductors decreases, responsivity to step change in photon influx and the ratio of slow response in the total response increases. These results also indicate that the slow response characteristics depend mainly on crystal qualities such as compensation if the metal–p⁺ contact is good enough.     

Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films

ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10⁻⁴ Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C_Ga/(C_Ga + C_Zn) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10⁻⁴ Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.     

Point contact spectroscopy in Ga single crystals

The current-voltage characteristics of point contacts in Ga single crystals have been measured in the liquid helium temperature range. At least six singular structures were found in energy range between 6 to 31 mV of the spectra d²V/dI². They are in good agreement with the structure of the phonon density-of-states determined from the inelastic neutron scattering experiment by Reichardt et al. The obtained spectra were used to estimate the electron-phonon coupling parameter.     

Structural changes of piezoelectric La3Ga5SiO14 induced by paramagnetic ions revealed by Ga multiple quantum magic angle spinning

Experimental evidence that nuclear magnetic resonance (NMR) can detect structural changes of piezoelectric La₃Ga₅SiO₁₄ induced by dilute paramagnetic ions is presented. Gd³⁺ and Eu³⁺ cations have been incorporated into La₃Ga₅SiO₁₄ monocrystals. As expected, the line-width of the tetrahedral ²⁹Si magic angle spinning (MAS) NMR spectra as well as the inverse of the T₂ relaxation time of ⁷¹Ga increases with the concentration of the paramagnetic ions. A surprising result is shown by ⁷¹Ga multiple quantum (MQ) MAS NMR spectrum, which changes with the concentration of paramagnetic ions. The changes in the ⁷¹Ga MQMAS spectra can be explained by a more ordonated distribution of Ga ions inside the oxygen tetrahedra. The ⁷¹Ga MQMAS NMR spectra allow identification of the one octahedral and two tetrahedral Ga sites.     

Calculations of the energy spectra of Zn,Ga, and Ge isotopes by the shell model

The effective Hamiltonian which was determined empirically by Koops and Glaudemans is tested in shell model calculations for the^65–68Zn,^67–69Ga, and^68–70Ge nuclei in the full (1p _3/2,0f _5/2,1p _1/2) ⁿ space. The resulting energy spectra are compared with the experimental spectra and results of previous calculations. The overall agreement with experiment is as satisfactory for these nuclei as for the Ni and Cu isotopes, by which the Hamiltonian was determined. It is noticed that the spectra of⁶⁷Zn and^67,69Ga calculated in this work are similar to those provided by the Alaga model.     

Prediction of enhanced ferromagnetism in (Ga,Mn)As by intrinsic defect manipulation

In the diluted magnetic semiconductor (Ga,Mn)As the excess of As incorporated as As antisites (As_Ga) is responsible for the hole compensation. The As_Ga defect can be transformed into a As interstitial–Ga vacancy pair (As_i–V_Ga) upon illumination. In this paper we study the effects of such a transition on the ferromagnetism of (Ga,Mn)As using density functional theory within the local spin density approximation. We find that the ferromagnetic order in (Ga,Mn)As is strongly enhanced if As_Ga are transformed into As_i–V_Ga pairs, since the hole compensation is reduced. This suggests a valuable way to tune the carrier concentration and hence the T_c in (Ga,Mn)As, without changing the Mn concentration nor the microscopic configuration of the Mn ions.     

Chemical shift of the Ga and As Kα1,2 and Kβ1,3 X-ray emission lines

By means of a double crystal spectrometer and a computer the chemical shifts of the Ga Kα_1,2, As Kα_1,2 and Kβ_1,3 lines were determined with high accuracy. An interpretation of the results obtained with a free ion model and a calculation according to the Hartree method shows agreement of the values calculated for the effective atomic charges with those based on chemical experience, and also the presence of a charge transfer from the A atom to the B atom in A^IIIB^V compounds. The existence of binding charges is one of the reasons for the fact that |q_A| ≠ |q_B|. The interpretation of the Kβ_1,3 and Lα shifts shows the limitations of the free ion model.