Study on the Near Field of the Semiconductor Laser by Using Scanning Near Field Optical Microscope

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｉｎｍａｎｙａｐｐｌｉｃａｔｉｏｎｓｔｈｅｎｅａｒｆｉｅｌｄｅｍｉｓｓｉｏｎａｎｄｔｈｅｂｅａｍｐａｒａｍｅｔｅｒｓｏｆａｓｅｍｉｃｏｎｄｕｃｔｏｒｌａｓｅｒａｒｅｒｅｑｕｉｒｅｄ .Ｃｏｍｐａｒｅｄｔｏｔｈｅｍｅａｓｕｒｅｍｅｎｔｏｆｔｈｅｎｅａｒｆｉｅｌｄｓｏｆｓｏｌｉｄｓｔａｔｅｌａｓｅｒａｎｄｇａｓｌａｓｅｒ,ｔｈｅｍｅａｓｕｒｅｍｅｎｔｏｆｔｈｅｎｅａｒｆｉｅｌｄｏｆａｓｅｍｉｃｏｎｄｕｃｔｏｒｌａｓｅｒｉｓｍｏｒｅｄｉｆｆｉｃｕｌｔ.Ｔｈｅｒｅａｓｏｎｉｓ…     

Speckle control using high-frequency signal superposition to semiconductor laser

Speckle contrast of images generated by a red semiconductor laser was measured precisely utilizing a state-of-the-art speckle measurement system with a cooled CCD camera with auto-light-power-level adjustments. By using high-frequency signal (～500 MHz) superposition to the single-mode semiconductor laser, the 3 dB spectrum of the laser beam was broadened from 0.1 to 2.3 nm. As a result, the speckle contrast value was drastically reduced from 0.9 to 0.2.     

High-contrast microscopy of semiconductor and metal sites in integrated circuits by detection of optical feedback

High-contrast microscopy of semiconductor and metal sites in integrated circuits is demonstrated with laser-scanning confocal reflectance microscopy, one-photon (1P) optical-beam-induced current (OBIC) imaging, and detection of optical feedback by means of a commercially available semiconductor laser that also acts as an excitation source. The confocal microscope has a compact in-line arrangement with no external photodetector. Confocal and 1P OBIC images are obtained simultaneously from the same focused beam scanned across the sample plane. Image pairs are processed to generate exclusive high-contrast distributions of semiconductor, metal, and dielectric sites in a GaAs photodiode array sample.     

Studying the Mode－Spectra Characteristics of An Above－Threshold Biased Semiconductor Laser

ＳｔｕｄｙｉｎｇｔｈｅＭｏｄｅ－ＳｐｅｃｔｒａＣｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＡｎＡｂｏｖｅ－ＴｈｒｅｓｈｏｌｄＢｉａｓｅｄＳｅｍｉｃｏｎｄｕｃｔｏｒＬａｓｅｒ￥ＸＩＡＧｕａｎｇｑｉｏｎｇ；ＷＵＺｈｅｎｇｍａｏ；ＣＨＥＮＪｉａｎｇｕｏ；ＬＵＹｕｃｕ...     

F-P半导体激光放大器弱信号机制下的增益特性研究

利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大.测量了放大器增益随放大器注入电流的变化关系,并将实验结果同理论模型相比较,发现理论和实验是一致的.把F-P放大器看作是一个光电探测器,通过测量放大器的短路光电流,得到了激光器同放大器之间的耦合效率.     

百瓦级半导体激光器模块的风冷散热系统分析

对百瓦级半导体激光器风冷散热系统进行分析,利用ANSYS 有限元分析软件对高功率半导体激光模块器件的温度场分布进行了模拟和优化设计。为百瓦级大功率半导体激光模块风冷系统工艺方案的选择提供了依据,并据此进行了实验验证。     

半导体激光器及其在干涉计量中的应用

本文介绍了半导体激光器的典型特性,探讨了用其相干长度进行干涉计量的新方法,并进行了眼球光学长度的测量的实验。     

通信用大功率半导体激光器的温控系统

主要叙述通信用大功率半导体激光器曙控原理及激光组件的构成。解决了大功率半导体激光器工程应用中输出功率和波长随温度变化较大的问题。     

New Approach to Investigation of Tunable External Cavity Semiconductor Lasers

ＮｅｗＡｐｐｒｏａｃｈｔｏＩｎｖｅｓｔｉｇａｔｉｏｎｏｆＴｕｎａｂｌｅＥｘｔｅｒｎａｌＣａｖｉｔｙＳｅｍｉｃｏｎｄｕｃｔｏｒＬａｓｅｒｓ￥ＬＵＨｏｎｇｃｈａｎｇ；ＬＵＯＢｉｎ（ＳｏｕｔｈｗｅｓｔＪｉａｏｔｏｎｇＵｎｉｖｅｒｓｉｔｙ，Ｃｈｅｎｇｄｕ６１...     

Novel photonic applications of nonlinear semiconductor laser dynamics

With a proper perturbation, even a single-mode semiconductor laser can exhibit highly complex dynamical characteristics ranging from stable, narrow-linewidth oscillation to broadband chaos. In recent years, three approaches to invoke complex nonlinear dynamical states in a single-mode semiconductor laser have been thoroughly studied: optical injection, optical feedback, and optoelectronic feedback. In each case, the nonlinear dynamics of the semiconductor laser depends on five intrinsic laser parameters and three operational parameters. The dynamical state of a given laser can be precisely controlled by properly adjusting the three operational parameters. This ability to control the dynamical behavior of a laser, combined with the understanding of its characteristics, opens up the opportunity for a wide range of novel applications. This paper illustrates the utilization of the rich nonlinear dynamics of single-mode semiconductor lasers by focusing on the period-one oscillation for its applications in tunable photonic microwave generation, AM-to-FM conversion, and dual-frequency precision Doppler lidar.     

激光自准直CCD数字分光计的研制

采用半导体激光器、CCD显示单元和高精度实心轴角度传感器对传统分光计进行改进,实现了分光计的激光自准直调节,使得分光计的粗调能有的放矢,减少了盲目调节;望远镜图像液晶显示缓解了实验者的视觉疲劳,减少了视差;读数系统的数字化,使得读数变得非常简单快捷,数据的重复性和可靠性更好.     

一种测量GaAs-GaAlAs行波激光放大器增益特性的实验方法

本文报导了一种测量光耦合效率η的新实验方法。这个方法是建立于p-n结短路光电流原理上的。本文推导出适合于行波激光放大器的光耦合效率的公式。短路光电流用一检流计测量,利用公式获得光耦合效率的实验值。利用实验所测光耦合效率,测量了行波激光放大器的增益随注入电流变化的规律,其结果和实验符合。另外本文还介绍了在脉冲注入电流条件下测行波半导体激光放大器增益的实验方法。     

X-ray preionised excimer laser and its applications

Performance of an X-ray preionised XeCl excimer laser is presented, a maximum output of 30 W (1.2 J/25 Hz) has been obtained. This laser was applied in laser semiconductor processing, laser deposition and laser photolithography.     

闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究

在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。     

Ultrafast laser spectroscopy of semiconductor nanocrystals

A large amount of work has been worldwide directed to understand the properties of semiconductor nanostructures. Ultrafast lasers with pulsewidths of a few femtoseconds allowed the investigation of the dynamics of elementary excitations in semiconductor structures on ultrashort time scales. Recent progress in technology made it possible to fabricate semiconductor nanocrystals (i.e. crystals of nanometer dimensions) of well-defined properties. The purpose of this paper is to review the understanding of carrier relaxation and recombination processes in semiconductor nanocrystals as studied by ultrafast laser spectroscopy. The up-to-date techniques of ultrafast laser spectroscopy as well as the fabrication of semiconductor nanocrystals are discussed in some detail.     

Intense laser field effects on the linear and nonlinear intersubband optical properties of a semi-parabolic quantum well

By using the compact-density matrix approach, the effect of a nonresonant intense laser field on the linear and nonlinear optical absorptions based on intersubband transitions and the refractive index changes in an asymmetric semiconductor quantum well have been presented. Our results show that the peak position of the absorption coefficient is sensitive to intense laser field, the absorption maximum shifts towards lower energies for increasing intense laser field value. Also we observe as the intense laser field strength increases, the total refractive index change has been increased in magnitude and also shifted towards lower energies. The results indicate that linear and nonlinear optical properties of the low dimensional semiconductor heterostructures can be adjusted in a desired energy range by using intense laser field.     

Development of non-destructive quantitative measurement system of water vapour density enclosed in halogen lamp bulbs

A simple, low-cost spectrometric system for non-destructive quantitative measurement of water vapour density enclosed in halogen lamp bulbs has been developed using a near-infrared semiconductor laser system. A working curve was successfully obtained using a temperature stabilized, perturbed-injection-current near-infrared semiconductor laser system. A minimum detectable water vapour density as low as several tens of ppm with good reliability has been confirmed. This revised version was published online in November 2006 with corrections to the Cover Date.     

Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr⁴⁺:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.     

半导体激光器光束准直系统的功率耦合效率

在长距离无线光通信中，接收点光功率密度与光束发散角平方呈反比关系，为了获得小的发散角和大的功率耦合效率，要求准直系统有较大的数值孔径(NA)，但数值孔径过大会增加像差，因此合理设计功率耦合效率与准直系统的数值孔径就非常重要。该文对半导体激光器光束准直系统中功率耦合效率进行了研究，给出了半导体激光器光束功率耦合效率与k(孔径半径与孔径处等效光束半径之比)的关系表达式，并结合激光器光束准直系统，给出了半导体激光器光束功率耦合效率与准直系统数值孔径的关系表达式。该研究结论对于半导体激光器光束准直系统设计具有参考作用。     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。