Kinetic theory of runaway breakdown in inhomogeneous thundercloud electric field

Kinetic theory of runaway breakdown in inhomogeneous thunderstorm electric field is developed. The kinetic equation, boundary and initial conditions are formulated. Spectrum of X-ray emission generated by runaway electrons is calculated. It has quite a specific form: a sharp maximum at energies 50–60 keV and a rapid fall both to the smaller and higher energies. The intensity of the emission is growing effectively with the relation E_m/E_c (of maximal electric field E_m to critical field E_c) and falling down sharply with the distance near the point z where electric field E(z) is equal to critical field E_c.     

An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states?

We discuss DLTS andC-V measurements on Al/Si₃N₄/Si(2nm)/n-GaAs (≈ 5×10¹⁷ cm^?3) structures. Three discrete deep traps superimposed on a U-shaped interface-state continuum have been identified, with respective thermal energies:E _c?0.53 eV,E _c?0.64 eV, andE _v+0.69 eV. The second one (0.64 eV) is presented as an electric field sensitive level, its enhanced phonon-assisted emission resulting in a rapid shift of the corresponding DLTS peak to lower temperatures, as the applied (negative) reverse bias voltage increases. An interpretation through emission from the quantum well, introduced by means of the intermediate ultrathin Si layer, has failed.     

Thermoreflectance of single crystal Gd

Thermoreflectance spectra for E∥c and E⊥c were measured on a Gd single crystal. The thermoconductance spectra, Δσ_∥ and Δσ_t], are very anisotropic. The strong interband edge at about 0.5 eV is shown to arise from a transition to or from the Fermi level for E⊥c. For E∥c additional effects occur.     

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E_c—0.046 eV, E_c—0.186 eV, E_c—0.314 eV. E_c—0.528 eV and E_c—0.605 eV) were detected. The metastable defect E_c—0.046 eV having a trap signature similar to E1 is observed for the first time. E_c—0.314 eV and E_c—0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.     

Evidence for a small component of circular polarization in relativistic electron bremsstrahlung

Using a transmission type polarimeter, an asymmetry has been found that can be ascribed to a circularly polarized component in the bremsstrahlung beam of unpolarized relativistic electrons from the Mainz electron linac, in the region of electron energiesE _el between 140 and 400 MeV. The experiment is described in detail. Systematical errors are discussed. For a comparison with electroweak theory, an exact calculation for small photon emission angles (of the order ofm c ²/E _el) is needed.     

High pressure tuning of optical transitions in Mg[Pt(CN)4]·7H2O

Mg[Pt(CN)₄]·7H₂O belongs to the class of tetracyanoplatinates(II) which crystallize in columnar structures. In different M_x[Pt(CN)₄]·yH₂O (MCP) single crystals the in-chain Pt-Pt-distance R varies between 3.67 Å (NaCP) and 3.15 Å (MgCP). Two optical transitions can be observed in polarized emission with the electric field vector E either parallel or perpendicular to the columnar (c)-axis. Polarized emission spectra of MgCP are recorded under hydrostatic pressure up to p ≈ 18 kbar (at 295 K). The transition energy v?₆ can be tuned from 17,600 cm^-1 to about 12,000 cm^-1 (2.18-1.48 eV). The pressure induced red shift for the two transitions is: E 6 c: dv?₆/dp = -320±20 cm^-1/kbar, E ⊥ c: dv?_⊥/dp = -270±20 cm^-1/kbar. These values are discussed in the context of the known functional relationship (for ambient conditions) between v? and R.     

Possible evidence for heavy-ion-induced collective electron emission from solids

A peak has been observed for the first time in the angular distributions of low energy electrons (E_c<5 eV) emitted under heavy-ion bombardment of solids. The peak energy and angle coincide with the peak energy and angle predicted recently for collective electron emission in heavy-ion-solid collisions.     

Reflection spectra of orthorhombic indium iodide

The reflection spectra of InI single crystal have been measured using linearly polarized light. Pronounced anisotropy is observed between two directions of polarization E ∥ c and E ∥ a. The first peak at 2.018 eV for E ∥ c is direct allowed exciton transition with binding energy 4.3 meV. The E ∥ a spectrum suggests that the transition is forbidden.     

Temperature dependence of the energy separation between Γ and L minima in n-type GaSb

Energy separation ΔE_c between Λ and L minima of GaSb conduction band is deduced from temperature dependence of tunneling current in p−n junctions. ΔE_c is found to inceasing vx. temperature with a coefficient d(ΔE_c/dT) of about - 2.10^-4eV/dgK.     

Determination ofβ-particle longitudinal polarization in the decay of210Bi

The longitudinal polarization ofβ-particles from²¹⁰Bi has been measured at three values of the energy, using a double-focusing crossed field electron spin polarimeter. The results are:E=150keV,P/(?υ/c)=0.70±0.07,E=220keVP/(?υ/c)=0.70±0.05,E=300keV,P/(?υ/c)=0.71±0.05.     

Band-edge photoluminescence of PbI2

Photoluminescence spectra of the hexagonal layered semiconductor PbI₂ have been measured at 4.2°K on various single crystalline specimens. They are interpreted in relation with the anisotropic polariton model. The emitted radiation is assumed to originate from free and bound exciton recombination, with and without phonon emission. A peak polarized E ∥ c about 4 meV above the excitonic line is related to the extraordinary polariton mode.     

Infrared laser modulation spectroscopy

The lack of sensitivity in far infrared of conventional modulation techniques can be overcome by the use of a laser beam as a powerful high resolution infrared source. As an illustration of these features we describe a thermoreflectance experiment performed on mercury telluride using a frequency stabilised CO₂ laser. In this experiment a thin slab of HgTe was illuminated by the beam of the laser. A continuous shift of the Γ_6v?Γ_8c energy interval was produced by a slow temperature variation while the sample was submitted to a slight temperature modulation obtained by low frequency Joule heating. Synchronous and direct detection of the reflected beam gave the relative variation of reflectivity as a function of the sample temperature. Several spectra obtained at different emission lines enable us to determine the energy difference (E_g) between Γ_6v and Γ_8c inverted states. As a first approach a qualificative fit has been obtained with a simple model of dielectric constant and its temperature derivative. These results give the first direct determination of E_g near room temperature E_g = ? 117.04 meV at T = 286 ± 2 K.     

The Weiss model and the Landau–Khalatnikov model for the switching of ferroelectrics

It is shown that the molecular field theory by P. Weiss formally leads to the switching kinetics of ferroelectrics, which is described by the well-known Landau–Khalatnikov equation. The switching has a critical character, taking place only at E_a>E_c (E_a: external field, E_c: coercive field). The results are checked by computer simulations.     

Almost mobility edges and the existence of critical regions in one-dimensional quasiperiodic lattices

We study a one-dimensional quasiperiodic system described by the Aubry–André model in the small wave vector limit and demonstrate the existence of almost mobility edges and critical regions in the system. It is well known that the eigenstates of the Aubry–André model are either extended or localized depending on the strength of incommensurate potential V being less or bigger than a critical value V _c , and thus no mobility edge exists. However, it was shown in a recent work that for the system with V < V _c and the wave vector α of the incommensurate potential is small, there exist almost mobility edges at the energy E _c±, which separate the robustly delocalized states from “almost localized” states. We find that, besides E _c±, there exist additionally another energy edges E _c′±, at which abrupt change of inverse participation ratio (IPR) occurs. By using the IPR and carrying out multifractal analyses, we identify the existence of critical regions among |E _c±|?≤?|E|?≤?|E _c′±| with the mobility edges E _c± and E _c′± separating the critical region from the extended and localized regions, respectively. We also study the system with V > V _c , for which all eigenstates are localized states, but can be divided into extended, critical and localized states in their dual space by utilizing the self-duality property of the Aubry–André model.     

Interference of ordinary and extraordinary waves in AgAsS2 crystals

The anisotropy of the near-bandgap absorption is investigated in AgAsS₂ crystals. The refraction indices, n^‖ and n^⊥ respectively for the E‖c and E⊥c polarizations as well as the spectral dependence of the refraction indices difference, Δn=n‖−n^⊥ are determined from the interference spectra of AgAsS₂ crystals. A transmission band with four maxima is observed in the transmission spectra of crystals placed between crossed polarizers. The optical parameters n, k, ε₁, and ε₂ for the E‖c and E⊥c polarizations are calculated from the reflection spectra by using the Kramers–Kronig relations.     

Die transversale,negative, differentielle Leitfähigkeit von n-Germanium: Zwei 2-Tal-Modelle ihrer statischen und dynamischen Eigenschaften

Taking into account two of the four 111-energy minima of the Ge-conduction band, expressions for the field and frequency dependent transverse differential conductivityσ _yy(ω, E _x) have been derived. Forω=0, one obtains the static properties, especially information concerning the critical fieldsE _xc defined byσ _yy(0,E _xc)=0. Forω≠0, the plasma frequenciesω _p have been calculated fromσ _yy(ω, E _x). One of these goes to zero forE _x→E _xc (soft mode). The optical quantities: refractive index, extinction and reflection coefficient have also been calculated. They show anomalies in the regionE _x=E _xc. To evaluate the equations quantitatively, the intervalley and the momentum scattering rate have been derived in the last part of this work using known distribution functions.     

Flicker noise of hot electrons in silicon at T = 78 K

From flicker-noise and current-voltage measurements performed on an n⁺nn⁺ silicon planar device at T = 78 K we calculated Hooge's parameter α as a function of the electric field strength, E₀. We found that α(E₀) = α(0)/[1 + (E₀/E_c)²]. E_c is a critical field where the drift velocity equals the sound velocity, indicating the connection of the observed effect with acoustical phonon scattering.     

赝配GaAs/In0.2Ga0.8As量子阱导带不连续量的C-V和电容瞬态测量

分别采用二种不同方法测量分子束外延(MBE)生长GaAs/In_0.2Ga_0.8As单量子阱结构的导带不连续量ΔE_c:1) 考虑样品界面电荷修正的电容-电压(C-V)分布；2) 量子阱载流子热发射产生的电容瞬态(DLTS).C-V测得的ΔE_c=0.227eV,大约相当于89% ΔE_g.DLTS测得的ΔE_c=0.229eV,大约相当于89.9% ΔE_g.结果 关键词：     

On the core electron binding energy of carbon and the effective charge of the carbon atom

From Mulliken population data based on ab initio calculations of a series of substituted aromatic compounds and from well-calibrated XPS data (core electron binding energies, E_b) an empirical relation between E_b(C1s) and the charge on the carbon atoms, q_c, has been found: E_b(C1s = 6.42q_c + 4.52q²_c + 285.8 (eV). It is also found that XPS data for other carbon-containing species, notably the cyanide ion, can be described by this relation.