Effects of dislocations on small signal high frequency hot electron mobility in n-GaN at low and high temperatures under high magnetic fields including hot phonon effect

The small signal high-frequency ac mobility of hot electrons in n-GaN in the extreme quantum limit at low- and high-temperatures has been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distributions. The energy loss rate has been calculated considering the dominance of the piezo electric coupling scattering and the polar optical phonon scattering while the momentum loss rate has been calculated considering the acoustic phonon scattering via deformation potential and the piezo electric coupling and the dislocation scattering.     

Effects of non-equilibrium polar optic phonons and the band non-parabolicity on small signal high-frequency hot electrons ac mobility in narrow gap semiconductors in high magnetic fields

The small signal high-frequency ac mobility of hot electrons in n-HgCdTe in the extreme quantum limit at low and high temperatures have been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distribution .The energy loss rate has been calculated considering only optical phonon scattering while the momentum loss rate has been calculated considering acoustic phonon scattering and piezoelectric scattering together with polar optical phonon scattering and separately considering only the polar optical scattering. The results have been discussed and compared. It has been observed that at 20 K, the normalized mobility considering all the three scattering mechanisms differs appreciably from that considering only the polar optical phonon scattering. However, at 77 K, there is no difference in the normalized mobility. This establishes the fact that at higher temperature, the effect of acoustic phonon scattering and piezoelectric coupling is negligible, compared to the polar optical phonon scattering. So the ac mobility considering only polar optical phonon scattering has been studied at 77 and 20 K. The ac mobility is found to remain constant up to 100 GHz and thereafter it started decreasing at higher frequencies at 77 K whereas the ac mobility reduces at much lower frequencies at lower temperature at lower field. The non-parabolicity of the band structure enhances the normalized mobility.     

Phonon coupling in inelastic atom-surface scattering

Inelastic scattering of a thermal He beam from a LiF surface has been observed in terms of velocity and intensity distributions as a function of scattering angle. The results allow a correlation with theoretical predictions assuming single Rayleigh phonon coupling for both phonon creation and annihilation processes. A marked decrease of inelastic intensities with momentum or energy transfer is demonstrated, which depends strongly on the temperature of the scattering surface.     

Electron and Phonon in Neutron Scattering of Semiconductor Crystals

An interaction of electron with harmonic, localized and anharmonic fields has been taken to develop the theory of neutron scattering. The Fourier transformed electron Green’s function is evaluated by Zubarev equation of motion technique of quantum dynamics and Dyson equation approach. The expression of Debye-Waller factor (DWF) has been obtained from electron phonon linewidth. The study of its (DWF) effect on differential scattering cross-section through temperature, electron phonon coupling constant and excitations has been investigated in this approach.     

The effect of the electron-phonon coupling on the thermal conductivity of silicon nanowires

The thermal conductivity of free-standing silicon nanowires (SiNWs) with diameters from 1-3?nm has been studied by using the one-dimensional Boltzmann's transport equation. Our model explicitly accounts for the Umklapp scattering process and electron-phonon coupling effects in the calculation of the phonon scattering rates. The role of the electron-phonon coupling in the heat transport is relatively small for large silicon nanowires. It is found that the effect of the electron-phonon coupling on the thermal conduction is enhanced as the diameter of the silicon nanowires decreases. Electrons in the conduction band scatter low-energy phonons effectively where surface modes dominate, resulting in a smaller thermal conductivity. Neglecting the electron-phonon coupling leads to overestimation of the thermal transport for ultra-thin SiNWs. The detailed study of the phonon density of states from the surface atoms and central atoms shows a better understanding of the nontrivial size dependence of the heat transport in silicon nanowire.     

Structure factors and phonon dispersion in liquid Li<Subscript>0.61</Subscript>Na<Subscript>0.39</Subscript> alloy

The phonon spectra for liquid Li and Na have been computed through the phenomenological model of Bhatia and Singh for disordered systems like liquids and glasses and the obtained results have been compared with the available data obtained by inelastic neutron scattering (INS) and inelastic X-ray scattering (IXS) experiments. The effective pair potentials and their space derivatives are important ingredients in the computation of the dispersion curves. The pair potentials are obtained using the pseudo-potential theory. The empty core model proposed by Ashcroft is widely used for pseudo-potential calculations for alkali metals. But, it is thought to be unsuitable for Li because of its simple 1s electronic structure. However, it can be used with an additional term known as Born-Mayer (BM) core term. The influence of the BM core term on the phonon dispersion is discussed. The same pseudo-potential formalism has been employed to obtain the dispersion relation in liquid Li_0.61Na_0.39 alloy. Apart from the phonon spectra, the Ashcroft-Langreth structure factors in the alloy are derived in the Percus-Yevick approximation.     

Effect of phonon scattering mechanisms on the lattice thermal conductivity of skutterudite-related compound

We have prepared the skutterudite-related compounds FeCo_3Sb_{12} and La_{0.75}Fe_3CoSb_{12} with different average grain sizes (about 0.8 and 3.9μm) by hot pressing. Samples were characterized by XRD, EPMA and SEM. The lattice thermal conductivity was investigated in the temperature range from room temperature to 200℃. Based on the Debye model, we analyse the change in lattice thermal conductivity due to various phonon scattering mechanisms by examining the relationship between the weighted phonon relaxation time τ(ω/ω_D)^2 and the reduced phonon frequency ω/ω_D. The effect of grain boundary scattering to phonon is negligible within the range of grain sizes considered in this study. The large reduction in lattice thermal conductivity of FeCo_3Sb_{12} compound contributes to the electron－phonon scattering. As for La_{0.75}Fe_3CoSb_{12} compound, the atoms of La filled into the large voids in the structure of the skutterudite produce more significant electron－phonon scattering as well as more substitute of Fe at Co site at the same time. Moreover, the point-defect scattering appears due to the difference between the atoms of La and the void. In addition, the scattering by the rattling of the rare-earth atoms in the void is another major contribution to the reduced lattice thermal conductivity. Introducing the coupling of the electron－phonon scattering with the point-defect scattering and the scattering by the rattling of the rare-earth atom is an effective method to reduce the lattice thermal conductivity of the skutterudite-related compounds by substitution of Fe for Co and the atoms of La filled in the large voids in the skutterudite structure.     

Inelastic light scattering in the Eu and Yb monochalcogenides

Multiphonon inelastic light scattering has been investigated in the magnetically ordering Eu and in the diamagnetic Yb monochalocogenides. All aspects of this scattering suggest that the multi-phonon lines results from recombination during time resolved relaxation ot the excited “hot” electron. The multiphonon scattering in these compounds is therefore interpreted by a two-step process of absorption followed by emission (hot luminescence). The observation of zone-center and zone-boundary multiphonon scattering is related to the electron-phonon coupling which is dependent on the kinetic energy of the excited photo-electron. Hence, with excitation into the bottom of the conduction band the coupling to the phonon system is dominated by the Fröhlich polaron concept, leading to zone-center LO scattering, whereas at higher excitation energies the electron-phonon coupling is no longer selective and is dependent primarily on the LO phonon density of states. The relaxation process and the electron-phonon coupling are strongly dependent on magnetic order. However, by comparison of the Eu monochalcogenides with the corresponding Yb compounds it is evident that the general phenomenon of multiphonon scattering in these compounds is independent of a spin system and is determined alone by the unique band structure.     

Free-carrier absorption in quantum well structures for acoustic phonon scattering

Free-carrier absorption has been studied for quantum well structures fabricated from III-V semiconducting materials where the acoustic phonon scattering is important. The energy band of carriers is assumed to be nonparabolic. We discuss the effect of acoustic phonon scattering on the free-carrier absorption for both deformation-potential coupling and piezoelectric coupling. It is found that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic radiation relative to the layer plane or quantum well, the photon frequency, and the temperature. When the deformation-potential coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane or perpendicular to the layer plane. However, when the piezoelectric coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane, but for photons polarized perpendicularly to the layer plane, the free-carrier absorption coefficient decreases with increasing temperature. Moreover, at high temperatures such as T = 300 K, the free-carrier absorption coefficient oscillates with the film thickness in a small quantum well region and then decreases monotonically with increasing the film thickness. This is different from the result for three-dimensional semiconducting solids.     

Electronic Raman scattering and the electron–phonon interaction in YB6

Electronic Raman scattering in YB₆ and in its structural and electronic analog LaB₆ has been studied in the temperature range of 10–730 K. The experimental spectra have been compared to those calculated on the basis of ab initio band structures with renormalization owing to the electron–phonon interaction. Good agreement between the calculation and experiment for LaB₆ has been obtained throughout the entire temperature range. This allows the determination of the coupling constant λ _ep = 0.25. To satisfactorily describe the spectra of electronic light scattering in YB₆, it is necessary to introduce an additional electron relaxation channel. In this case, the estimate of the electron–phonon coupling constant λ _ep is no more than 0.4; for this reason, a high superconducting transition temperature cannot be explained only by the phonon mechanism.     

Raman phonons in multiferroic FeVO_4 crystals

Multiferroic materials are promising candidates for next-generation multi-functional devices, because of the coexistence of multi-orders and the coupling between the orders. FeVO4 has been confirmed to be a multiferroic compound,since it exhibits both ferroelectricity and antiferromagnetic ordering at low temperatures. In this paper, we have performed careful Raman scattering measurements on high-quality Fe VO4 single crystals. The compound has a very rich phonon structure due to its low crystal symmetry(P- 1) and at least 47 Raman-active phonon modes have been resolved in the low and hightemperature spectra. Most of the observed modes are well assigned with aid of first-principles calculations and symmetry analysis. The present study provides an experimental basis for exploring spin-lattice coupling and the mechanism of multiferroicity in FeVO4     

Influence of spin–orbit interactions on the polaron properties in wurtzite semiconductor quantum well

We have study the simultaneous effect of Rashba and Dresselhaus spin–orbit interactions on the polaron properties in wurtzite semiconductor quantum wells. The linear and cubic contributions of the bulk Dresselhaus spin–orbit coupling and the effects of phonon confinement on electron–optical-phonon interaction Hamiltonians are taken into account. We have found analytical solutions for the polaron energies as well as polaron effective mass within the range of validity of perturbation theory. It is shown that the polaron energy and effective mass correction are both significantly enhanced by the spin–orbit coupling. Wave number dependent phonon contribution on the electron energy has minima and varies differently of the spin-up and spin-down states. Polaron self-energy due to interface optical phonon modes has larger values than of the confined optical phonon modes ones. The polaron effective mass exhibits anisotropy and the contribution of the Dresselhaus spin–orbit coupling term on the polaron effective mass is dominated by Rashba one.     

Electrons, phonons and superconductivity in C16 structured Zr2Fe

Inelastic neutron scattering and low-temperature specific heat measurements are reported for a polycrystalline sample of Zr₂Fe. Lattice dynamical calculation of the phonon spectrum, along with first-principles LMTO electronic structure calculations have been used for deriving the specific heat parameters, the electron–phonon coupling constant and the superconducting transition temperature. The results are in fair agreement with the experimental data.     

The frequency dependence of phonon interactions at Terahertz-frequencies studied by time-resolved phonon spectroscopy

Phonon properties concerning propagation, frequency spectrum and lifetime in the Terahertz range have been investigated. The phonons have been produced by square wave Joule heating of thin constantan films evaporated onto a strongly doped ruby. Cross sections for phonon scattering at the Cr³⁺ impurity ions of the ruby were determined as a function of frequency. The theoretical estimate for mass defect scattering given by Klemens [9] is found to agree reasonably with the experimental results. Lifetime measurements indicate that phonons in ruby preferentially propagate in the transversal mode. Phonon frequency spectra in the constantan films were measured under experimental conditions, where the strength of electron phonon coupling is significant; thus electron-phonon relaxation times could be obtained as a function of frequency.     

Tailoring electron–phonon interaction in nanostructures

Efficient design of optoelectronic devices based on electron intersubband transitions depends critically on the knowledge of the intersubband relaxation times which in turn, depends on electron scattering with LO and acoustic phonons. In this article the intersubband scattering time associated with electron–acoustic-phonon interaction has been discussed in terms of phonon mode quantization and phonon confinement with describing the acoustic phonon dispersion relation in detail by introducing the cut-off frequency for each mode. It has been shown that the quantization of acoustic phonon modes lead to an enhancement in electron–phonon scattering time in AlGaAs quantum well structures. Based on the presented model, a new tailoring method has presented to adjust the electron–phonon scattering time in intersubband-transition-based structures while keeping the electronic properties unaltered. Also, we illustrated that for a quantum well with subband energy separation of ∼30 meV, the intersubband scattering time with acoustic-phonon-assisted transitions could be tailored from ∼120 ps to increased value of ∼400 ps or reduced value of ∼45 ps by inserting a 1 nm-thickacoustically soft or hard layers, respectively, while keeping the same the initial energy separation.     

Antiferromagnetic fluctuations in water-intercalated YBa2Cu3O6.8

Raman scattering by phononic and electronic excitations, as well as the magnetic susceptibility of water-intercalated YBa₂Cu₃O_6.8, has been studied. Direct evidence of the incorporation of OH^?-groups into the structure of the crystal has been obtained. The observed changes in the phonon spectrum and the appearance of the spectrum of antiferromagnetic fluctuations with an increased exchange coupling constant imply the localization of carriers and suppression of superconductivity. Change in the resonance behavior of the two-magnon scattering of light indicates the transformation of the electronic structure in crystallites absorbing water.     

Characterization of single-crystalline GaAs by imaging with ballistic phonons

Ballistic phonon propagation in single-crystalline [001]-oriented gallium arsenide has been studied using low-temperature scanning electron microscopy for imaging. Deviations in the phonon focusing pattern due to dispersion effects were found by comparing the phonon images to theoretical calculations of the long-wavelength limit. The phonon propagation behavior in, samples cut from differently prepared wafers has been investigated. For highly impure crystals we found a pronounced increase of the diffusive signal component at the expense of the ballistic one. Samples with varying dislocation densities also showed a sensitive dependence, of the ballistic phonon propagation on these crystal defects. For focusing calculations considering elastic scattering processes the diffusivity of the phonons could be determined as a function of the mean scattering length. We have found phonon mean free paths of 0.35 mm to 0.80 mm for the various GaAs crystals.     

Observation of low‐wavenumber out‐of‐plane optical phonon in few‐layer graphene

Few‐layer graphene grown by chemical vapor deposition has been studied by Raman and ultrafast laser spectroscopy. A low‐wavenumber Raman peak of ~120 cm⁻¹ and a phonon‐induced oscillation in the kinetic curve of electron–phonon relaxation process have been observed, respectively. The Raman peak is assigned to the low‐wavenumber out‐of‐plane optical mode in the few‐layer graphene. The phonon band shows an asymmetric shape, a consequence of so‐called Breit‐Wigner‐Fano resonance, resulting from the coupling between the low‐wavenumber phonon and electron transitions. The obtained oscillation wavenumber from the kinetic curve is consistent with the detected low‐wavenumber phonon by Raman scattering. The origin of this oscillation is attributed to the generation of coherent phonons and their interactions with photoinduced electrons. Copyright © 2012 John Wiley & Sons, Ltd.     

Incoherent neutron scattering by the phonon-libron system in solid ortho-hydrogen

The incoherent scattering cross section of slow neutrons by ortho hydrogen atT=0 K has been calculated for the case where only one excitation (phonon, libron resp. a mixed mode quantum) is created. The results are compared with the experiment of Stein, Stiller and Stockmeyer and prove that only the coupling of phonons and librons can produce the measured cross section.     

Raman scattering from spin fluctuations and phonons in the heavy-fermion superconductor UPt3

Quasielastic scattering from spin fluctuations has been observed in UPt₃ by Raman spectroscopy. The experiments for wave vectors q≈0 show a nearly temperature independent linewidth for 5 K ⩽ T ⩽ 300 K Complementary to neutron scattering results this establishes the q independence of the spin relaxation rate, indicating the localized nature of the spin fluctuations. A Raman-active phonon near 79 cm^-1 (10 meV) shows a drastic increase in line-width with decreasing temperature, demonstrating strong electron-phonon coupling.