Long wavelength lattice vibrations in GaS and GaSe

The first order Raman spectra and far infrared absorption spectra of GaS and GaSe have been investigated and interpreted. A correspondence is drawn between the observed vibrational modes of the two crystals and a Raman active polar longitudinal mode has been identified in GaSe. The results are consistent with the existence of GaS in a β-polytype (D_6h) and GaSe in an ?-polytype (D_3h).     

The nature of temperature dependence of energy gaps in layer semiconductors

The temperature dependences of direct and indirect energy gaps in layer semiconductors GaS, GaSe and GaS_xSe_1?x are investigated in the temperature range 5–150 K. The nonmonotonous behaviour of E_g(T) dependences is observed in these crystals. It is shown that the effect of thermal expansion cannot in itself explain the observed anomalies. A new model of electron-phonon interaction explaining the E_g(T) behaviour in layer crystals is proposed.     

Properties of optical phonons in Zn1−x−yMgyBexSe quaternary mixed crystal

Long wavelength optical lattice vibration and dielectric constants of the quaternary mixed crystal Zn_1−x−yMg_yBe_xSe are investigated based on the pseudo-unit-cell mode and Born-Huang procedure. It is found that this material shows a three-mode behavior and the oscillator strength of each mode is mainly controlled by only one component. The theoretical results also show that the linear interpretation method for dielectric constants is reliable. The vibrational frequencies and the oscillator strengths of the ternary mixed crystals Be_xZn_1−xSe, Be_xMg_1−xSe and Mg_xZn_1−xSe are also calculated as special cases of the quaternary mixed crystal for comparing with experiments. The calculation shows agreement with the experimental results.     

Raman scattering in TlInS2xSe2(1−x) layered mixed crystals (0.25≤x≤1): Compositional dependence of the mode frequencies and line widths

The Raman spectra of TlInS_2xSe_2(1−x) layered mixed crystals were studied for a wide composition range (0.25≤x≤1) in the frequency region 10-360 cm⁻¹ at room temperature. The shift of Raman-active phonon frequencies versus mixed crystals composition x were established. The effect of crystal disorder on the line width broadening of three high-frequency Raman-active modes is reported.     

Helimagnetism in MnP-type compounds: MnP,FeP, CrAs and CrAs1−xSbx mixed crystals

The solid solution CrAs_1?xSb_x has been investigated by neutron diffraction at various temperatures. The phase boundary between mixed crystals with MnP-structure and those with NiAs-structure moves from 59 mol% CrAs at room temperature to 48 mol% CrAs at liquid helium temperature. The mixed crystals with NiAs-type structure at 4.2K have the collinear magnetic structure of CrSb. Samples having the MnP-type structure exhibit a “double spiral” spin structure like CrAs. The variation of the magnetic moment and the spiral structure have been studied. Using neutron diffraction data for the magnetic propagation vector and the phase difference of the two helices, the signs and the ratios of the exchange integrals are discussed in a Heisenberg model. The stability regions in parameter space are determined by a matrix method for the ferromagnetic mode observed in MnP above 50 K and for the helical modes observed in MnP below 50 K, and in FeP, CrAs and CrAs_1?xSb_x. We have also considered the possibility of antisymmetric and symmetric exchange between nearest neighbours only, using a group theoretical approach.The high ratios of antisymmetric to symmetric exchange would be necessary to explain the observed helical structures preclude however antisymmetric exchange as a dominant factor.     

Raman scattering from GaSe1−xTex

The long-wavelength optical phonons of the layer GaSe_1?xTe_x have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1,06 μm line of the continuously operated YAG:Nd³⁺ laser. Detailed study of the Raman spectra of GaSe_1?xTe_x solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal ?-GaSe to monoclinic GaTe in GaSe_1?xTe_x solid solutions takes place in the composition range 0.27 ? × ? 0.72. Only one mode behaviour of the optical phonons was observed in GaSe_1?xTe_x system.     

Observation of disappearance of cooperative Jahn-teller distortion in the two-dimensional magnetic system K2CuxZn1-xF4 by Raman scattering experiments

Raman spectra in the two-dimensionla diluted system K₂Cu_xZn1-xF4 are reported. The problem how the cooperative Jahn-Teller distortion (whose existence in the c-plane is well confirmed for K₂CuF₄) is destroyed with decreasing x is discussed on the basis of observed behaviours of Strokes lines for some characteristic vibrational modes in spectra.     

Evidence for the spin-dependent scattering of conduction electrons on Mn2+ ions in Hg1−xMnxTe and Cd1−xMnxSe mixed crystals

Changes in the resistivity of Hg_1?xMn_xTe and Cd_1?xMn_xSe mixed crystals associated with paramagnetic resonance of the Mn²⁺ ions have been observed at liquid helium temperature in a strong magnetic field. The effect was recorded by monitoring the submillimeter radiation induced photoconductivity in a swept magnetic field. An increase in the resistivity associated with EPR of the Mn²⁺ ions is interpreted in terms of the spin- dependent scattering of electrons on magnetic impurities, the spins of which are selectively depolarised by means of paramagnetic resonance. Some additional effects influencing the experiments are also discussed.     

Resonant Raman scattering in mixed GaSxSe1−x crystals

One- and two-phonon resonant Raman scattering around the absorption edge in mixed GaS_xSe_1?x crystals with 0 ? x < 0.23 has been measured. The results can be explained by a simple theory in which the dispersion of RRS is dominate by exciton resonances.     

Valence band states of semi-magnetic semiconductors: Cd1-xMnxTe

Valence band electron states of Cd_1-xMn_xTe mixed crystals were determined over the composition range 0?x?0.7 by ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). A peak at 3.5 eV binding energy (BE) whose magnitude increases with the manganese mole fraction x was identified as originating from the Mn 3d⁵ level. A previously reported structure at 6.5 eV BE was also observed for x>0.4; it is, however, believed to be a satellite of the 3.5 eV peak originating from a shake-up process.     

Electronic structure and optical properties of CdSexTe1−x mixed crystals

The band structure and optical properties of the CdSe_xTe_1−x ternary mixed crystals have been studied using the pseudopotential formalism under an improved virtual crystal approximation approach. Quantities such as, energy gaps, band-gap bowing parameters, electron effective mass and dielectric constants are calculated. Our results agree well with the available data in the literature. The composition dependence of all studied quantities has been expressed by quadratic polynomial forms.     

Optical absorption in Hg1−xMnxTe, x < 0.2 mixed crystals

Optical absorption in Hg_1?xMn_xTe, x < 0.2 mixed crystals was measured in the photon energy range from 0.03 to 0.6 eV at the temperatures 295, 80, 15 K. Experimental results were interpreted on the basis of the Kane model for Δ ? E_G. A transition from the inverted band structure (α-Sn-type) to the simple (InSb-type) structure was observed and was found to be composition and temperature dependent.     

Comparative study of porous amorphous a-Si1−xCx films and a-Si1−xCx membranes on structural and luminescence properties

Electrochemical etching of amorphous SiC in fluoride solution was studied. Anodic dissolution and passivation are observed for p-type electrodes under dark illumination. The dissolution of p-type a-Si_1−xC_x is found to be under mixed transport/kinetic control; the diffusion current is of first order in fluoride concentration. Porous etching was not observed in this case. The surface finish of 6H-SiC depends on the experimental conditions; both uniform and porous etching is observed. In this paper, we report the formation of porous p-type amorphous SiC (a-Si_1−xC_x) films, elaborated previously by DC magnetron sputtering and analyze the porous layers (PSC) using scanning electron microscopy, spectrophotometer and photoluminescence. The crystal structures and the preparation conditions of porous SiC are shown to have an effect on the structural and electrical properties of the material obtained. SEM observation indicates that the porous a-Si_1−xC_x layers have shown some specific feature; a semi-cylindrical structure of the porous network has been observed.     

Direct evidence for controlled band filling in the mixed crystal NMPxPhen1−xTCNQ

Raman spectra of the segregated stack mixed crystal NMP_xPhen_1?xTNCQ and the mixed stack compound Phen TCNQ are presented. By means of the relation between charge transfer and line shift, we give for the first time a direct proof for controlled band filling in the mixed crystal series, whereas for Phen TCNQ a zero charge transfer is obtained. Raman spectra of Phenazine and the related NMP⁺ have also been measured and used for comparison.     

Competition between spin-glass and antiferromagnetic order in EuxSr1−xAs3

Measurements of the magnetic a.c. susceptibility χ of Eu_xSr_1?xAs₃ single crystals (0.10 ? x ? 0.78) are reported. For the lower concentrations, spin-glass like maxima with a.c. frequency dependent positions and heights are observed. Samples with x = 0.54 and 0.65 exhibit a complex magnetic behavior (with directional dependence of χ observed for x = 0.54) which gives way to antiferromagnetic ordering when x is further increased towards EuAs₃.     

Magnetic properties of Sn1-xCrxTe crystals

Magnetization measurements of magnetic semiconductor Sn_1-xCr_xTe (x <5 at%) crystals with the Curie temperature T_c = 150–300 K were made down to 2 K. The magnetic properties are sensitive to isothermal annealing under Zn vapor. The overall magnetizations of the Zn-annealed crystals have paramagnetic and ferro- or antiferromagnetic contributions.     

Urbach rule and disordering processes in Cu6P(S1−xSex)5Br1−yIy superionic conductors

Compositional behavior of Urbach absorption edge is studied as well as the effect of compositional disordering on the parameters of exciton-phonon interaction, phase transition temperatures and electric conductivity in Cu₆P(S_1−xSe_x)₅Br_1−yI_y superionic solid solutions. The effect of different types of disordering on the optical absorption processes and specific features of compositional changes in the absorption edge spectra under S→Se and Br→I anion substitution in the mixed crystals are investigated. (x, T) phase diagrams for Cu₆P(S_1−xSe_x)₅X (X=I, Br) solid solutions are studied.     

Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1−xPx crystals

Raman scattering from photo-created free carriers in undoped GaP and GaAs_1?xP_x (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.     

Irreversible effects in LaGa1−xMnxO3

Quasi-irreversible increase in the electrical conductivity is observed in single crystals of LaGa_1−xMn_xO₃. The effect lasts for long time at room temperature and can be erased by heating of the crystal above the phase transition temperature. We explain the observed effects in terms of ionization and local lattice distortion processes.     

The energy spectra of uniaxially deformed layered semiconductors A3B6

The absorption and photoluminescence spectra of uniaxially (parallel and perpendicular to crystal's “C” axis) deformed layered crystals. GaSe. GaS and InSe are investigated at 5 K. It is shown that the results of low temperature deformation experiments may be interpreted within the model an isolated layer without taking into consideration interlayer interaction.