Model of superconducting domains––a unified theory of high- and low-Tc superconductors

A unified model of the superconducting mechanism has been put forward. The model suits not only to high-T_c but also to low-T_c superconductors. It is found that there are superconducting domains (SD) in crystal. When T⩽T_c, all the SD’s in the whole crystal are connected with one another. We have obtained the formula of T_c. On the basis of the formula and theory of quantum mechanics, the different behaviours of isotopic effects in low- and high-T_c superconductors as well as C₆₀, the triangular peak of T_c of transition metals, Matthias rules, and other effects are explained. New superconductors with higher T_c are predicted.     

Repulsive effect of low frequency phonons on superconductivity

The Eliashberg integral equations are investigated to determine the effect of low frequency phonons on the superconducting transition temperature T_c. It is found that phonons of frequency less than T_c are repulsive (diminish T_c) while phonons of higher frequency have a diminished attraction unless the frequency is substantially above T_c. Various implications are discussed concerning observed values of T_c and predicted mechanisms for raising T_c.     

Observation of a transition from BCS to HTSC-like superconductivity in Ba1 − x KxBiO3 single crystals

The temperature dependences of the upper critical field B _c2(T) and surface impedance Z(T) = R(T) + iX(T) have been measured in Ba_{1 ? x} K_xBiO₃ single crystals with transition temperatures 6 ≤ T _c ≤ 32 K (0.6 > x > 0.4). A transition from the BCS to an unusual type of superconductivity has been revealed: B _c2(T) curves of the crystals with T _c > 20 K have positive curvature (as in some HTSCs), and those of the crystals with T _c < 15 K described by the usual Werthamer-Helfand-Hohenberg (WHH) formula. The R(T) and X(T) dependences of the crystals with T _c ≈ 32 K and T _c ≈ 11 K in the temperature range T ? T _c are linear (as in HTSCs) and exponential (BCS), respectively. The experimental results are discussed using the extended saddle point model by Abrikosov.     

Critical temperature changes in many-layer films between plates

Two distinct mechanisms produce two separate terms in the change of the critical temperature T_c in an n-layer (n ↗ 1) film. The interface interaction induces a change ΔT_c, ΔT_c/T_c ⩽ O(2/n). The finite thickness of a film gives another term in the change of T_c, which has the exponent 1/ν≈1.56. Comparison with experiments is made and further experiments are discussed.     

The Nernst-Ettingshausen coefficient in hole-doped manganites

A systematic study of the Nernst-Ettingshausen coefficient (NEC) in hole-doped manganites of the LaMnO₃ and SmMnO₃ systems was carried out at temperatures both above and below the point of transition to the magnetically ordered state (T _c). The results obtained for T > T _c suggest that conduction is mediated here by small-radius polarons. For all the compositions studied, the Nernst mobilities at T = 300 K are small (of the order of 0.1–2 cm²/V s) and the carrier relaxation time at T > T _c increases with carrier energy. At temperatures below T _c, the NEC exhibits an anomalous behavior. The giant NEC effect was observed, which consists in a strong dependence of the NEC on applied magnetic field and the presence of a peak in the temperature dependence of the NEC at T ≈ T _c. Near the transition to the magnetically ordered state, the NEC follows a behavior similar to that of colossal magnetoresistance and giant magnetothermoelectric power. A possible origin of the anomalous NEC behavior at T < T _c is discussed.     

Low-temperature x-ray diffraction studies of the crystallographic parameters and thermal expansion of (CH3)2NH2Al(SO4)2 · 6H2O crystals

The a, b, c, and β crystallographic parameters of the (CH₃)₂NH₂Al(SO₄)₂ · 6H₂O crystal (DMAAS) have been measured by x-ray diffraction in the 90–300-K temperature range. The thermal expansion coefficients along the principal crystallographic axes α_a, α_b, and α_c have been determined. It was shown that, as the temperature is increased, the parameter α decreases and b increases, whereas c decreases for T<T _c (where T _c is the transition temperature) and increases for T>T _c, so that one observes a minimum in the c=f(T) curve in the region of the phase transition (PT) temperature T _c ～ 152 K. The thermal expansion coefficients α_a, α_b, and α_c vary in a complicated manner with increasing temperature, more specifically, α_a and α_c assume negative values at low temperatures, and the α_a=f(T), α_b=f(T), and α_c=f(T) curves exhibit anomalies at the PT point. The crystal has been found to be substantially anisotropic in thermal expansion.     

Validity of model-potential approach for the expanded liquid alkali metals

The liquid density along the saturation line is calculated for Na, K, Rb and Cs. Good results are obtained in sodium in the whole experimental range T ? 0.85 T_c (T_c is the critical temperature). The observed discrepancy in the heavier alkali metals for T ? 0.75 T_c is tentatively related to recent speculations.     

High pressure study of BaPb0.7Bi0.3O3 films

The resistance R, the superconducting transition temperature T_c and the energy gap Δ(T) have been measured on the BaPb_0.7Bi_0.3O₃ films up to 14 kbar. We have found that up to 14 kbar: (1) pressure suppresses T_c and Δ(T) while enhances R, (2) the value of 2Δ(0)/kT_c is 3.8±0.1, independent of pressure, and (3) the Δ(T)/Δ(0) varies with T/T_c in a BCS fashion but only for T/T_c<0.75 and independent of pressure. The results show that BaPb_1?xBi_xO₃ is a weak-coupling superconductor, but fail to provide information about the cause for the high T_c of the compound.     

Properties of disordered Mo3Ge thin films with A15 structure

Heavy ion irradiation of A15 Mo₃Ge with the low transition temperature T_c = 1.45 K raises T_c to ? 6 K. For the first time in A15 compounds a T_c degradation (≈ 3 K) after having passed through a maximum is observed until near 3.5 K the saturation value is reached. The effects on T_c are interpreted by variations of the deduced (H'_c2, ?) density of states at the Fermi level. This picture consistently explains the T_c degradation of the high-T_c A15 compounds.     

Mechanism of carrier generation and the origin of the pseudogap and 60 K phases in YBCO

The mechanism of hole carrier generation is considered in the framework of a model assuming the formation of negative U centers (NUCs) in HTSC materials under doping. The calculated dependences of carrier concentration on the doping level and temperature are in quantitative agreement with experiment. An explanation is proposed for the pseudogap and 60 K phases in YBa₂Cu₃O_6+δ. It is assumed that a pseudogap is of superconducting origin and arises at temperature T* > T_c∞ > T_c in small nonpercolating clusters as a result of strong fluctuations in the occupancy of NUCs (T_c∞ and T_c are the superconducting transition temperatures of an infinitely large and finite NUC clusters, respectively). The T*(δ) and T_c(δ) dependences calculated for YBa₂Cu₃O_6+δ correlate with experimental dependences. In accordance with the model, the region between T*(δ) and T_c(δ) is the range of fluctuations in which finite nonpercolation clusters fluctuate between the superconducting and normal states due to NUC occupancy fluctuations.     

The zero-distribution of the great partition function in the complex fugacity plane of gases of point particles with logarithmic interaction

The equation of state for gases of point particles with logarithmic interaction is derived. The system exhibits a phase transition at a critical temperature T_c. The critical temperature is a function of the dimension of the system. A hard core must be added below T_c to prevent the system from collapsing. The specific heat diverges on both sides as |T_c - T|^-2 in any dimension.For T≤T_c there are no zeros of the grand partition function in the complex fugacity plane, for T >T_c all zeros occupy the whole negative real axis. The density of zeros will be calculated.     

Electrical resistivity of iron-vanadium alloys between 78 and 1200 K

Electrical resistivity (?) of FeV alloys containing 0.5, 0.9, 2.7, and 6.1 at% V has been measured as a function of temperature (T) between 78 and 1200 K. The ? vs. T curves exhibit a change in the slope at the ferromagnetic Currie temperature (T_c). The d?/dT vs. T curves in the neibhorhood of T_c are similar to the corresponding plot for pure Fe. Our studies confirm the previously observed anomalous effect of V on T_c of Fe, i.e., that T_c increase with small additions of V to Fe. The critical index λ⁺ associated with the power law of d?/dT just above T_c has been determined as a function of V concentration.     

Low energy electron diffraction beam profiles and phase transition at Si(111)-7 X 7 surface

Angular profiles of low energy electron diffraction (LEED) beams from Si(111)-7 × 7 are measured for various crystal temperatures T near the phase transition with apparent critical temperature T_c ≈ 1140 K. From analyses of the profiles it is concluded that (1) long range superstructure order persists for T up to at least 50 K above T_c and (2) with increasing T the correlation length characterizing the short-range order peaks for T ≈ T_c ? 100 K and decreases rapidly for T >T_c. Conclusion (1) is discussed with reference to a dislocation network model of Si(111)-7 × 7 reconstruction.     

Superconductivity and Peierls instability in coupled linear chain systems

We study the superconducting transition temperature (T_c) and the Peierls instability temperature (T_p) using Eliashberg type equations for both T_c and T_p self consistently with finite interchain coupling. We show that T_c > T_p below a critical electron-phonon coupling constant which depends on the bare phonon frequency. This determines an upper bound on T_c so that for higher transition temperatures T_p > T_c and superconductivity is unlikely. Higher values of T_c are possible if the interchain coupling is increased above a critical value where the Peierls instability is suppressed.     

Polarization properties of Li2−x Na x Ge4O9 (0.2 ≤ x ≤ 0.3) crystals

The polarization switching in sinusoidal fields and the pyroelectric properties of Li_2?x Na _x Ge₄O₉ (0.2 ≤ x ≤ 0.3) crystals are measured in the temperature range T _c ?T ≤ 40 K. The behavior of the P?E hysteresis loops with variations in temperature is investigated for crystals with phase transition temperatures T _c < 300 K and T _c > 300 K. It is shown that, for crystals with phase transition temperatures T _c < 300 K, the temperature dependence of the hysteresis loop exhibits a behavior typical of crystals with second-order phase transitions. The crystals with phase transition temperatures T _c > 300 K are characterized by double hysteresis loops in the temperature range T _c ?T ₁ ≈ 30 K. The correlation between the polarization properties and possible structural transformations of the Li_2?x Na _x Ge₄O₉ crystals due to the change in the concentration ratio of Na and Li ions is discussed.     

c-axis penetration depth in Bi2Sr2CaCu2O8+δ single crystals measured by ac-susceptibility and cavity perturbation technique

The c-axis penetration depth Δλ_c in Bi₂Sr₂CaCu₂O_8+δ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function Δλ_c(T)∝T in the temperature range T<0.5T _c. Electrodynamic analysis of the impedance anisotropy has allowed us to estimate λ_c(0)≈50 µm in BSCCO crystals overdoped with oxygen (T _c≈84 K) and λ_c(0)≈150 µm at the optimal doping level (T _c≈90 K).     

Pressure dependence of the Curie temperature of some Ni3Al compounds

Pressure experiments on four ferromagnetic Ni₃Al compounds with Curie temperatures between 30 K and 72 K show a decrease of T_c with increasing pressure. Values for the parameter α(= -T_c?T_c/?p) are between 17 and 26.     

Modeling of the out-of-plane resistivity of cuprate superconductors

The out-of-plane (c-axis) resistivity, ρ_c(T), of high-T_c cuprates have been modeled in this study. The non-Fermi liquid like temperature dependence of ρ_c(T) has been described by considering (i) the full impact of the pseudogap (PG) in the electronic density of states (EDOS) and (ii) the presence of a quantum critical point (QCP) beneath the superconducting dome at slightly overdoped region. This simple phenomenological model describes the experimental ρ_c(T) data over a wide range of hole content (from the underdoped to slightly overdoped regions) remarkably well. The PG energy scale, ε_g (dominated by the anti-nodal parts of the Brillouin zone) extracted from the analysis of ρ_c(T) data was found to decrease almost linearly with increasing hole concentration, p, in the CuO₂ planes. We have also discussed about the possible origin of more conventional behavior of ρ_c(T) observed in the deeply overdoped side of the T–p phase diagram in this paper.     

A thermal and Raman investigation of the phase transitions above room temperature in anhydrous potassium acetate

Results using thermal and Raman techniques are presented on the phase transition in potassium acetate occurring above room temperature. Two phase transitions are observed at T_c1 = 349K and T_c2 = 413K. The magnitude of the entropy change at T_c1 and the Raman results suggest that this transition is orientational in nature and is due to rotation of the acetate ion about the c-c axis. The T_c2 transition is displacive in nature, and the Raman results show a marked softening of the lowest frequency mode as T_c2 is approached from below.     

Low-frequency electrical resistance of iron,cobalt, and nickel in the vicinity of their Curie temperatures

Alternating-current electrical resistance measurements between 17 Hz and 100 kHz were made on high purity Fe, Co, and Ni wires in the vicinity of their Curie temperatures (T _c). The electrical resistance was independent of frequency for temperatures (T) aboveT _c. As the temperature was lowered, however, there was an abrupt jump in the electrical resistance atT _c followed by a gradual decrease toward its dc value. The magnitude of the electrical resistance jump atT _c increased as the square root of the frequency. The enhancement of the electrical resistance forT≦T _c is produced by an abrupt decrease of the skin depth atT _c which, in turn, is due to the sudden increase in the initial magnetic permeability atT _c. Measurements of the ac electrical resistance in the vicinity of the Curie temperature of certain ferromagnetic metals can be utilized to 1) accurately determine the Curie temperature using frequencies as low as 17 Hz, and 2) quantitatively determine the initial magnetic permeability as a function of temperature and heat treatment.