Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-<Emphasis Type="Italic">K</Emphasis> gate dielectric impacts on the inversion charge density

The comparison of the inversion electron density between a nanometer metal-oxide-semiconductor (MOS) device with high-K gate dielectric and a SiO₂ MOS device with the same equivalent oxide thickness has been discussed. A fully self-consistent solution of the coupled Schr?dinger–Poisson equations demonstrates that a larger dielectric-constant mismatch between the gate dielectric and silicon substrate can reduce electron density in the channel of a MOS device under inversion bias. Such a reduction in inversion electron density of the channel will increase with increase in gate voltage. A reduction in the charge density implies a reduction in the inversion electron density in the channel of a MOS device. It also implies that a larger dielectric constant of the gate dielectric might result in a reduction in the source–drain current and the gate leakage current.     

Methodological aspects of the electron-beam investigation of dielectric target charging

The basic characteristics of dielectric target charging with (2–30)-keV electron beams were investigated using the example of a typical insulator, Al₂O₃. A new hypothetical scenario of dielectric charging, based on the reduction of secondary-electron current due to the formation of polarized excitons in the positive layer of a charged target, is proposed on the basis of modeling calculations and the experimental data.     

Energy loss measurements and electronic properties of thianthren

Summary The dielectric and electronic properties of thianthren (C₆H₄(S)₂H₄C₆) are determined by means of optical reflectivity, absorption measurements and reflection electron energy loss spectroscopy. The experimental results are interpreted on the basis of a Complete Neglect of Differential Overlap (CNDO) calculation used in three different parametrization schemes. Emphasis is laid on the discussion of the problems which generally affect the analysis of electron energy loss spectra, and a procedure to obtain the complex dielectric function from electron energy loss measurements performed in the reflection mode is suggested. Work partially supported by the MURST through the GNSM.     

Experimental and theoretical determination of the low-loss electron energy loss spectroscopy of LiMn2O4

The dielectric properties of cubic spinel-type LiMn₂O₄, used as cathode material in lithium ion secondary batteries, are studied by analyzing the low-loss region of the electron energy loss spectroscopy (EELS) spectrum in a transmission electron microscope. A comparison of experimental EELS spectra and ab initio density-functional theory calculations (WIEN2k code) within the generalized gradient approximation (GGA) is presented. The origins of interband transitions are identified in the electronic band structure, by calculating the partial imaginary part of the dielectric function and the partial density of states of Li, Mn and O. Good agreement with experimental spectra is observed which allowed interpreting main features of the EELS spectrum.     

O2掺杂对SiCOH低k薄膜结构与电学性能的影响

以十甲基环五硅氧烷(D5)和氧气(O₂)作为反应气体，采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了k＝2.62的SiCOH薄膜.研究了O₂掺杂对薄膜结构与电学性能的影响.结果表明，采用O₂掺杂可以在保持较低介电常数的前提下极大地降低薄膜的漏电流，提高薄膜的绝缘性能，这与薄膜中Si-O立体鼠笼、Si-OH结构含量的提高有关. 关键词： SiCOH薄膜 2掺杂')" href="#">O₂掺杂 介电性能 键结构     

Structural and dielectric properties of polyvinyl alcohol/barium zirconium titanate polymer–ceramic composite

The polyvinyl alcohol (PVA)/barium zirconium titanate Ba[Zr_0.1Ti_0.9]O₃ (BZT) polymer–ceramic composites with different volume percentage are obtained from solution mixing and hot-pressing method. Their structural and electrical properties are characterized by X-ray diffraction (XRD), Rietveld refinement, cluster modeling, scanning electron microscope and dielectric study. XRD patterns of PVA/BZT polymer–ceramics composite (with 50% volume fractions) indicate no obvious differences than the XRD patterns of pure BZT which shows that the crystal structure is still stable in the composite. The scanning electron micrograph indicates that the BZT ceramic is dispersed homogeneously in the polymer matrix without agglomeration. The dielectric permittivity (ε_r) and the dielectric loss (tan δ) of the composites increase with the increase of the volume fraction of BZT ceramic. Theoretical models are employed to rationalize the dielectric behavior of the polymer composites. The dielectric properties of the composites display good stability within a wide range of temperature and frequency. The excellent dielectric properties of these polymer–ceramic composites indicate that the BZT/PVA composites can be a candidate for embedded capacitors.     

Determination of complex dielectric functions at HfO2/Si interface by using STEM-VEELS

The complex dielectric functions and refractive index of atomic layer deposited HfO₂ were determined by the line scan method of the valence electron energy loss spectrum (VEELS) in a scanning transmission electron microscope (STEM). The complex dielectric functions and dielectric constant of monoclinic HfO₂ were calculated by the density functional theory (DFT) method. The resulting two dielectric functions were relatively well matched. On the other hand, the refractive index of HfO₂ was measured as 2.18 by VEELS analysis and 2.1 by DFT calculation. The electronic structure of HfO₂ was revealed by the comparison of the inter-band transition strength, obtained by STEM-VEELS, with the density of states (DOS) calculated by DFT calculation.     

Effect of self-fields on the electron cyclotron maser instability in a dielectric loaded waveguide

The influence of self-fields on the cyclotron maser instability in a hollow electron beam propagating parallel to a uniform axial magnetic field B ₀ ê _z in a dielectric loaded waveguide is investigated. The theoretical analysis is carried out within the framework of linearized Vlasov-Maxwell equations. It is assumed that the beam is thin with the radial thickness much smaller than the beam radius. A new dispersion relation for azimuthally symmetric electromagnetic perturbation is derived and analyzed numerically. The influence of self-fields on the cyclotron maser instability in a dielectric loaded waveguide for different dielectric medium is studied. It is found that unlike the hollow waveguide the growth rate is increased by increasing self-fields. The instability band width decreases due to the increasing self-fields. The maximum growth rate increases gradually as self-fields increase as regards a different dielectric medium.     

Structural and chemical analysis of a model Si–SiO2 interface using spatially resolved electron-energy-loss spectroscopy

This work reports an experimental electron-energy-loss spectroscopy study carried out on a model thermal Si–SiO₂ interface. Valence-loss spectra and core-loss spectra (Si L_2,3 and O K edges) were recorded across the interface in line-spectrum mode with a high spatial resolution in a field emission gun scanning transmission electron microscope. From the analysis of the line spectra and on the basis of high-resolution electron microscopy and high-angle annular dark-field experiments, it is concluded that the interface is not sharp but extends over about three atomic planes consisting of Si and O atoms arranged in a structure evolving between crystalline SiO and SiO₂ before growing as an amorphous SiO₂ layer. In addition, from the analysis of the valence-loss spectra in terms of energy-loss function or dielectric function ε, we show that valence-electron-energy-loss spectroscopy could be a relevant alternative method for determining the electron properties, for example the bandgap, and the dielectric constant of dielectric gates on a nanometre scale.     

CaCu3Ti4O12陶瓷的介电特性与弛豫机理

本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu₃Ti₄O₁₂陶瓷的介电特性, 分析了CaCu₃Ti₄O₁₂陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu₃Ti₄O₁₂陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电弛豫 Schottky势垒 点缺陷     

Attenuation and escape depths of low-energy electron emission

Electron transport and emission is simulated by two Monte Carlo (MC) programs. The first version is based on elastic Mott cross sections and inelastic loss functions with full dispersion ΔE=ℏω(q), including electron impact and subsequent cascading processes. Surface effects like surface plasmons and the quantum mechanical surface transmittivity have been taken into account too. Especially for dielectric materials like SiO₂ and applied electric fields a second MC version is developed based on the electron scattering with acoustic and optical phonons, intra- and intervalley scattering and impact valence band ionization. A comparison of both versions results in a good agreement still in the energy region of several eV, but a predominance of the phonon-based second version is found for very low electron energies, e.g., for hot and ballistic electrons in dielectric materials.     

氧含量对BiFeOδ多晶陶瓷介电特性的影响

采用固相反应法制备了不同含氧量的BiFeO_δ多晶陶瓷样品，利用HP4294A阻抗分析仪测量了样品的介电特性随频率和氧含量的变化，用正电子湮没寿命谱学的方法研究了样品中因氧含量的变化所引起的结构缺陷. 实验结果表明：引入氧空位和氧填隙离子缺陷都会使介电常数减小，而介电损耗则随氧含量的增加而增加，二者的变化范围均在10%—35%之间；对不同氧含量的BiFeO_δ样品，介电常数和介电损耗随测量频率的增加而减小. 氧空位的引入使得局域电子密度变小，正电子平均寿命τ_m增加. 在氧含量δ=2.99时电子密度最大(n_e=3.90×10²³/cm³)，继续增加氧含量对正电子寿命与局域电子密度的影响不大. BiFeO_δ样品的介电常数和介电损耗随氧含量的变化可以在空间电荷限制电导的框架下来理解.     

Investigation of HfO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/<Emphasis Type="Italic">n</Emphasis>-Si(001)-based MOS structures via ballistic electron emission microscopy

(Au, Pt)/HfO₂/SiO₂/n-Si(001) metal-oxide-semiconductor structures with a thin (≈0.5 nm) SiO₂ layer, which is formed between HfO₂ and Si during atomic layer deposition of oxide layers, have been investigated via ballistic electron emission spectroscopy. The potential barrier heights at the (Au, Pt)/HfO₂ interfaces have been determined experimentally. The peculiarities observed in the curves of dependence of the collector current on the voltage between a scanning tunneling microscope probe and a metallic electrode are related to electron transport through the vacancy defect region of HfO₂ and the quantum-mechanical interference of electron waves arising from multiple reflections at the interfaces of the two-layer dielectric and at the interfaces of dielectric with a substrate and a metallic electrode.     

Dielectric relaxation in Bi12SiO20: Cr crystals

A study is reported of the temperature and frequency dependences of the permittivity and losses in Cr-doped Bi₁₂SiO₂₀ crystals at sonic frequencies and in the range 300–800 K. A number of dielectric anomalies and a close-to-linear Cole-Cole diagram have been observed. The results are discussed by invoking the concepts of electron hopping and screening of the induced polarization through the relaxation of local lattice distortions.     

Effect of ionizing radiation on dielectric characteristics of Cu<Subscript>2</Subscript>ZnSn(S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>4</Subscript> single crystals

The effect of electron irradiation on conductivity and dielectric permeability of Cu₂ZnSnS₄ and Cu₂ZnSnSe₄ single crystals and solid solutions based on them is studied. It is shown that values of dielectric permeability decrease with an increase in the irradiation dose while those of specific electric conductivity sharply increase.     

Structural and electrical behavior of Pb(Mg1/4Cd1/4Mo1/2)O3 ceramics

Preliminary X-ray structural analysis of polycrystalline Pb(Mg_1/4Cd_1/4Mo_1/2)O₃ ceramics, prepared by a solid-state reaction technique, provides single-phase orthorhombic structure at room temperature. Detailed dielectric studies of the material as a function of temperature reveal a sharp phase transition at temperature T_c=49°C obeying Curie-Weiss behavior. Scanning electron microscope (SEM) studies of the sample show the uniform distribution of grains in the samples. A dielectric anomaly and ferroelectric phase transition observed at 49°C was supported by polarization studies. The activation energy of the sample was calculated from the dielectric data. The variation of dc resistivity with temperature suggests that the compound behaves as a negative temperature coefficient resistor (NTCR).     

Effect of Sb-doping on the morphology and the dielectric properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared by using the hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with hexagonal wurtzite structure, the flower bud saturation degree F_d is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδ _e increases with the increase of the Sb-doping concentration in a certain concentration range.     

Synthesis and dielectric characteristics of La0.5Bi0.5MnO3 ceramics

La_0.5Bi_0.5MnO₃ ceramics with a single phase were prepared by a solid-state reaction method, and their dielectric properties were characterized. Two dielectric relaxations with a giant dielectric constant were identified in the temperature range from 125 to 350 K. The electron hopping between Mn³⁺ and Mn⁴⁺ was found to be the origin of the dielectric relaxation at low temperatures (125–200 K) with an activation energy of 0.18 eV. The high temperature (200–350 K) dielectric relaxation can be attributed to the conduction.     

Electrical breakdown and high-energy electron emission under dielectric charging

A Monte-Carlo calculation model for electron transport in crystalline dielectrics charged by irradiation is improved with allowance for impact ionization and cascading processes. The electron transport in SiO ₂ is simulated for high-strength electric fields. It is found that a breakdown in a dielectric can occur in the electric field strength range 11.5–12.5 MV/cm. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 52–58, March, 2008.     

The influence of dielectric films on the superconductivity of thin Sn and Tl films

The change in transition temperature for thin Sn and Tl films has been measured after deposition of dielectric substances. The change in transition temperature is inversely proportional to the thickness of the superconducting film and relatively independent of the thickness of the dielectric film. When SnS or Tl₂Se is deposited on Sn films, the transition temperature is depressed. When TICl or Tl₂Se is deposited on Tl films, the transition temperature is increased. When S is deposited on Tl films, there is no initial change inT _c ; however,T _c is appreciably increased after annealing. A possible explanation for this effect is the reduction of the free electron concentration in the metal through the formation of the contact potential between the dielectric and the metal.