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1.
Rui-Shu Yang 《中国物理 B》2022,31(12):127302-127302
We report on the high-field magnetotransport of KTaO3 single crystals, which are a promising candidate for study in the extreme quantum limit. By photocarrier doping with 360 nm light, we observe a significant positive, non-saturating, and linear magnetoresistance at low temperatures accompanied by a decreasing Hall coefficient. When cooling down to 10 K, the magnetoresistance value of KTaO3 (100) reaches ~ 433% at a magnetic field of 12 T. Such behavior can be attributed to all the electrons occupying only the lowest Landau level in the extreme quantum limit. Light inhomogeneity may also contribute to large linear magnetoresistance. These results provide insights into novel magnetic devices based on complex materials and add a new family of materials with positive magnetoresistance.  相似文献   

2.
A uniaxial anisotropy is induced in partially ordered MnNi alloys in the composition range near Ni3Mn, by applying a magnetic field during cooling from room temperature to 77 K. The uniaxial anisotropy constant Ku depends on both the magnitude of the torque measuring field and that of the cooling field. The easy axis direction tends to be between the 〈100〉 and the direction of the cooling field. The value of Ku shows a maximum when the cooling field is applied along 〈100〉, amounting to 2 × 104 crg/cm3. On the other hand, the crystalline anisotropy is not affected by field cooling. When the temperature is raised from 77 K to 300 K, neither Ku nor the rotational hysterisis loss is observed to have any critical temperature, for a torque measuring field of 20 kOe. As atomic ordering proceeds, these effects become smaller and appear to vanish in the perfectly ordered state.  相似文献   

3.
We report on magnetotransport measurements on millimetric superlattices of Co-Fe nanoparticles surrounded by an organic layer. At low temperature, the transition between the Coulomb blockade and the conductive regime becomes abrupt and hysteretic. The transition between both regimes can be induced by a magnetic field, leading to a novel mechanism of magnetoresistance. Between 1.8 and 10 K, a high-field magnetoresistance attributed to magnetic disorder at the surface of the particles is also observed. Below 1.8 K, this magnetoresistance abruptly collapses and a low-field magnetoresistance is observed.  相似文献   

4.
It is shown for ferromagnetic US that an extremely large anisotropy restrains magnetic moments to 〈111〉 easy axes, resulting in a near cos θ angular dependence of the magnetization away from the 〈111〉 axes. This is further confirmed by torque measurements, which in addition show large hysteresis effects upon rotation through the hard axes. It is illustrated through torque and magnetization measurements that a near stable domain configuration can be established by field rotation through decreasing angular amplitude around a hard 〈001〉 direction. The anisotropy constant K1(T) is estimated by computing the small angle through which the magnetization deviates from the 〈111〉 axes when a field is applied along the [001] direction.  相似文献   

5.
双钙钛矿Sr2CrWO6的磁性与输运性质研究   总被引:2,自引:0,他引:2       下载免费PDF全文
研究了双钙钛矿Sr2CrWO6的磁性和输运性质.Sr2CrWO6多晶在Ar气及真空气氛中经固相烧结而形成.X射线衍射分析表明主相为Sr2CrWO6,少量杂相为SrWO4.热磁测量表明样品的居里温度为480K左右.电阻随温度降低而升高,类似于绝缘体,在外场5T,低温下(25K)磁致电阻(MR)可达20%,但MR随温度升高而趋于零.较大的矫顽力(5.97×1 关键词: 双钙钛矿氧化物 磁性质 磁致电阻  相似文献   

6.
The anomalous behavior of magnetoresistance has been revealed in a number of granular microwires. In contrast to the giant magnetoresistance of granular alloys, which is associated with the spin-dependent scattering in the bulk of grains and at their surface, is linear in the square of the magnetization, and decreases with an increase in temperature, the magnetoresistance, for example, in Co10Cu90 microwires is negative, increases with an increase in temperature below the Curie temperature, and does not reach saturation in the field dependence in the high-field range. A simple mechanism of negative giant magnetoresistance due to scattering of spin-polarized charge carriers by impurity magnetic moments localized in the nonmagnetic intergranular spacers has been proposed taking into account that a considerable part of magnetic ions in microwires exhibiting this behavior is dissolved in the intergranular spacers. It has been shown that the corresponding contribution to magnetoresistance can reach 10–20%.  相似文献   

7.
We have analyzed the resistance of La1.2Sr1.8Mn2(1 – z)O7 single crystal in magnetic fields from 0 to 90 kOe in the ferromagnetic temperature range. The observed magnetoresistance of La1.2Sr1.8Mn2O7 is described based on the spin-polaron conduction mechanism. The magnetoresistance is determined by the change in the sizes and magnetic moment directions of magnetic inhomogeneities (polarons). It is shown that the colossal magnetoresistance is ensured by an increase (along the magnetic field) of the polaron linear size. It is found using the method for separating the contributions of different conduction mechanisms to the magnetoresistance that the contribution to the magnetoresistance from the orientation mechanism at 80 K in low magnetic fields is close to 50%. With increasing magnetic field, this contribution decreases and becomes small in fields exceeding 30 kOe. The comparable contributions to the conductivity from the orientational and spin-polaron mechanisms unambiguously necessitate the inclusion of both conduction mechanisms in the magnetoresistance calculations. We have calculated the temperature variation of the polaron size (in relative units) in zero magnetic field and in a magnetic field of 90 kOe.  相似文献   

8.
Sharp peaks observed in the induced torque of potassium as a function of magnetic field direction above about 4 T are temperature dependent in the range 1.1–1.9 K that was investigated. The amplitude and magnetic field direction of some of the peaks change with temperature. Induced torque amplitude at a fixed field direction and magnetic field above 4 T changes non-monotonically with temperature. The high-field peaks are independent of the presence of a four-fold torque which depends on sample conditions.  相似文献   

9.
The field-induced superconductivity-destroying quantum transition in amorphous indium oxide films are investigated at low temperatures down to 30 mK. It is found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increase of the magnetic field the resistance of the film drops and in the high-field limit approaches the resistance value at the transition point, so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron pairs. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 4, 337–342 (25 August 1998)  相似文献   

10.
研究了双钙钛矿Sr2 CrWO6的磁性和输运性质 .Sr2 CrWO6多晶在Ar气及真空气氛中经固相烧结而形成 .X射线衍射分析表明主相为Sr2 CrWO6,少量杂相为SrWO4 .热磁测量表明样品的居里温度为 480K左右 .电阻随温度降低而升高 ,类似于绝缘体 ,在外场 5T ,低温下 (2 5K)磁致电阻 (MR)可达 2 0 % ,但MR随温度升高而趋于零 .较大的矫顽力 (5 97× 10 4 A/m)以及低场部分MR H曲线偏离高场下的线性曲线显示样品可能有较强的磁各向异性  相似文献   

11.
Field-emitted electrons from tungsten tips extracted in magnetic fields of 3–25 kG at 80 K show spin polarization. The observed polarization is always found to be parallel to the external magnetic field for the polycrystalline and oriented tips (〈100〉, 〈110〉 and 〈111〉) investigated. The maximum values of polarization obtained with these monocrystalline emitters range betweenP max=11–13 percent.  相似文献   

12.
The Hall coefficient and the transverse magnetoresistance in aluminium single crystals were determined from measurements on standing helicon waves, in the three main crystallographic directions [100], [110] and [111]. The magnetic fields ranged from 1 to 7T and the temperature from 4.2 to 20 K. A Legendy-type theory with parameters adapted to the separation of the satellites as measured at high fields gave good fittings over the whole field range. The Hall coefficients, determined in this work, decrease with magnetic field as mentioned in earlier publications, but are generally lower than those published previously for comparable field ranges.The transverse magnetoresistance as a function of temperature was determined from a continuous recording of the helicon response at resonance. The temperature dependent part of the resistivity varies according to a T3 law for all fields. The field dependence is close to linear, but indications of quadratic and saturation behaviour are also present.  相似文献   

13.
High field magnetoresistance measurements have been made on samples of AuPb2, which consist of islands of oriented AuPb2 surrounded by eutectic mixture. The results obtained are very similar to what would be expected for single crystal samples. Open orbits are observed in 〈100〉, 〈110〉, 〈101〉, 〈112〉 and 〈211〉 and [001] directions. The results are consistent with predictions of the Nearly Free Electron Model.  相似文献   

14.
Topological semimetals are three-dimensional topological states of matter, in which the conduction and valence bands touch at a finite number of points, i.e., the Weyl nodes. Topological semimetals host paired monopoles and antimonopoles of Berry curvature at the Weyl nodes and topologically protected Fermi arcs at certain surfaces. We review our recent works on quantum transport in topological semimetals, according to the strength of the magnetic field. At weak magnetic fields, there are competitions between the positive magnetoresistivity induced by the weak anti-localization effect and negative magnetoresistivity related to the nontrivial Berry curvature. We propose a fitting formula for the magnetoconductivity of the weak anti-localization. We expect that the weak localization may be induced by inter-valley effects and interaction effect, and occur in double-Weyl semimetals. For the negative magnetoresistance induced by the nontrivial Berry curvature in topological semimetals, we show the dependence of the negative magnetoresistance on the carrier density. At strong magnetic fields, specifically, in the quantum limit, the magnetoconductivity depends on the type and range of the scattering potential of disorder. The high-field positive magnetoconductivity may not be a compelling signature of the chiral anomaly. For long-range Gaussian scattering potential and half filling, the magnetoconductivity can be linear in the quantum limit. A minimal conductivity is found at the Weyl nodes although the density of states vanishes there.  相似文献   

15.
The linear field dependence of the transverse magnetoresistance of a polycrystalline uncompensated metal with an open Fermi surface is said to arise from a contrast between extended and truly open orbits. We show that in the intermediate-field regime this is incorrect for Cu at least, where the linear dependence is initiated by the transition to the high-field condition of electrons in closed orbits.  相似文献   

16.
The longitudinal and transverse magnetoresistance of cubic n-SrTiO3 was measured with current in 〈001〉 and 〈111〉 directions at 120 K. The results support a model with a warped constant energy surface and are not consistent with a 〈100〉 many model of the lowest conduction band.  相似文献   

17.
A single crystal of europium has been studied in applied magnetic fields up to 41.7 koe. At TN = 90.5 ± 0.5°K a first order magnetic transition is observed. At 4.2°K the effect of an applied magnetic field in either a 〈100〉 or 〈110〉 direction is to stabilize a helix structure having τ along the field direction. This field stabilized structure remains even if the field is reduced to zero. The hysteresis associated with these transformations has been investigated and is discussed. No ferromagnetic components have been detected in fields up to 41.7 koe.  相似文献   

18.
A simple model of phase separation is used to study the magnetoresistance of manganites in the nonmetallic state. It is assumed that the phase separation corresponds to the emergence of small ferromagnetic metallic droplets (ferrons) in a nonconducting antiferromagnetic or paramagnetic medium, with the metallic phase concentration being far from the percolation threshold. The charge transfer is accomplished by way of electron jumps between droplets. The magnetoresistance in such a system is defined both by the variation of the volume of the metal phase and by the dependence of the probabilities of electron transitions on the magnitude of the magnetic field. It is demonstrated that, in the region of low magnetic fields, the magnetoresistance is quadratic with respect to the field and decreases with temperature by the T ?n law, where n takes values from 1 to 5 depending on the correlation between the parameters. In the high-field limit, the magnetoresistance increases abruptly with the volume of the metal phase. The crossover of the field dependence from quadratic to a stronger one may be accompanied by the emergence of a platean in the magnetoresistance. The correlation between the obtained results and the available experimental data is discussed.  相似文献   

19.
The magnetic anisotropy of a novel Mn(II)- [3x3] grid complex was investigated by means of high-field torque magnetometry. Torque vs field curves at low temperatures demonstrates a ground state with S>0 and exhibits a torque step due to a field-induced level crossing at B(*) approximately 7.5 T, accompanied by an abrupt change of magnetic anisotropy from easy-axis to hard-axis types. These observations are discussed in terms of a spin Hamiltonian formalism.  相似文献   

20.
Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO2/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 1013 cm?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 1012 cm?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO2/Si substrate.  相似文献   

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