Stark interaction for excited states in alkali atoms,investigated by laser spectroscopy

The scalar polarizability constantα ₀ for excitedS- andD-states in rubidium and cesium was measured utilizing a two-step excitation scheme. An rf lamp and a single-mode dye laser were used to excite the atoms in a collimated atomic beam. Values ofα ₀ were determined for the 9–10² S _1/2 and 7–8² D _3/2 states of rubidium and for the 10–13² S _1/2, 9–10² D _3/2 and 9–11² D _5/2 states of cesium. Further, the isotope shift was evaluated in the 5579 Å rubidium line. A review of experimental polarizability constants for rubidium and cesium is given, and the results are compared with theoretical values.     

Implant redistribution in high-dose ion implanted and annealed silicon

Abstract

Diffusion constants of helium in gold, silver and aluminium are determined from thermal desorption experiments, giving:

Au: D ₀ = 10^?1.0 cm²/sec, ΔH = 1.70 eV

Ag: D ₀ = 10^?1.2 cm²/sec, ΔH = 1.50 eV

Al: D ₀ = 10^+0.1 cm²/sec, ΔH = 1.35 eV

The results are compared to self-diffusion and to the diffusion of other light elements in metals. Possible diffusion mechanisms are discussed.     

Diffusion of hydrogen and deuterium on the (111) plane of tungsten

The diffusion of ¹H and ²H on the (111) plane of a W field emitter has been studied by the fluctuation method at various coverages. Both activated and unactivated diffusion is observed; the latter shows very little isotope effect, suggesting that coupling to the substrate is so strong that mass renormalization makes the effective masses of ¹H and ²H nearly identical. Values of D in the tunneling, i.e. temperature independent, regime are 10^?13?5 × 10^?14 cm²/s depending on coverage. For activated diffusion at high coverages, corresponding to population of the β₁ state E = 2.4?3.2 kcal/mol and D₀ = 2 × 10^?8 ?5 × 10^?7 cm²/s, depending on coverage. For lower coverages, corresponding to β₂ population, E = 7–9 kcal/mol, D₀ = 9 × 10^?6 ?2 × 10^?3 cm²/s, again depending on coverage. Similar values are obtained for ²H, with E and D₀ values slightly reduced. An exponentially decaying correlation signal for clean W was also seen and interpreted in terms of flip-flop of W atoms.     

Surface diffusion of lead on tungsten

Field electron microscopy is used to study the surface diffusion of lead on tungsten. A simple method to measure rough values of the diffusion coefficient and its dependence on sub-monolayer coverage is described and tested. In the region around (001) the displacement energy found is about 1.30 eV/atom up to 10¹⁵ atoms/cm² where it decreases to 0.78 eV/atom. In the residual region except (110) this energy at 1.5×10¹⁴ atoms/cm² is 1.22 eV/atom, it decreases at 4 × 10¹⁴ atoms/cm² to 0.61 eV/atom and increases at 10¹⁵ atoms/cm² to 0.78 eV/atom. Corresponding values of the diffusion coefficient D and of the preexponential D₀ are given. The dependence of D on submonolayer coverage is discussed.     

The ν12 band of C2D4

The Fourier transform infrared (FTIR) absorption spectrum of the ν₁₂ fundamental band of ethylene-d₄ (C₂D₄) was recorded in the 1017-1137 cm⁻¹ region with an unapodized resolution of 0.0063 cm⁻¹. Upper state (v₁₂ = 1) rovibrational constants consisting of three rotational and five quartic constants were improved by assigning and fitting 2103 infrared transitions using Watson’s A-reduced Hamiltonian in the I^r representation. The band centre of the A-type ν₁₂ band is found to be 1076.98480 ± 0.00002 cm⁻¹. The present analysis covering a wider wavenumber range and higher J and K_c values yielded upper state constants including the band centre which are more accurate than previously reported. The rms deviation of the upper state fit is 0.00045 cm⁻¹. Improved ground state rovibrational constants were also determined from the fit of 1247 ground state combination differences (GSCD) from the presently-assigned infrared transitions of the ν₁₂ band of C₂D₄. The rms deviation of the GSCD fit is 0.00049 cm⁻¹. In the rovibrational analysis, local frequency perturbations were not detected even at high J and K_a values. The calculated inertial defect Δ₁₂ is 0.32551 ± 0.00001 μŲ. The line intensities of the individual transitions in the ν₁₂ band were measured and the band strength of 39.8 ± 2.0 cm⁻² atm⁻¹ was derived for the ν₁₂ band of C₂D₄.     

PRECISE MEASUREMENT OF DENSITY-DEPENDENT SHIFT BY WAVELENGTH MODULATION REFLECTION SPECTROSCOPY

The density dependence of the line shift of the cesium D₂ line is studied with sub-Doppler selective reflection spectroscopy. By use of wavelength modulation and sixth-harmonics detection we observed the coefficient of the pressure-induced shift of the 6S_1/2(F=4)→6P_3/2(F'=3) hyperfine transition of the cesium D₂ line Δδ/ρ=-0.9(5)×10^-8cm³. In the limit ρ=0 a frequency shift about -3MHz remains, which may be attributed to long-range atom－surface interactions. The experimental results can be used in measurements of the local field-induced frequency shift at high atomic densities with sufficient accuracy.     

Far-infrared rotational spectra of some freons; chlorotrifluoromethane,dichlorodifluoromethane, and trichlorofluoromethane

The far-infrared rotational spectra of chlorotrifluoromethane, dichlorodifluoromethane, and trichlorofluoromethane have been observed with an interferometric (Fourier transform) spectrometer in the region 10–40 cm^?1 at a resolution of 0.07 cm^?1. CCl₂F₂ exhibits a continuum spectrum at this resolution, but symmetric top rotational fine structure is observed for CClF₃ and CCl₃F. Isotope splitting is also observed in CClF₃, and analysis yields the rotational constants for C³⁵ClF₃ of B₀ = 0.11112 cm^?1, D_J = 1.6 × 10^?8cm^?1; and for C³⁷ClF₃, B₀ = 0.10835 cm^?1, D_J = 1.5 · 10^?8cm^?1. Isotopic shifts can be allowed for in CCl₃F to yield constants for C³⁵Cl₃F of B₀ = 0.0821 cm^?1, D_J = 1 × 10^?8cm^?1. These values are all in agreement with those deduced from microwave studies of the low J transitions apart from B₀ for C³⁵ClF₃, where the difference is outside the expected experimental error.     

EPR and optical absorption study of Cr-doped ammonium oxalate monohydrate single crystals

The electron paramagnetic resonance (EPR) study of the Cr³⁺-doped ammonium oxalate monohydrate (AOM) single crystal is done at room temperature. Two magnetically inequivalent sites for chromium are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The spin Hamiltonian parameters are evaluated as: D=(309±2)×10⁻⁴ cm⁻¹, E=(103±2)×10⁻⁴ cm⁻¹, g=1.9820±0.0002, A=(161±2)×10⁻⁴ cm⁻¹ for site I and D=(309±2)×10⁻⁴ cm⁻¹, E=(103±2)×10⁻⁴ cm⁻¹, g=1.9791±0.0002, A=(160±2)×10⁻⁴ cm⁻¹ for site II, respectively. On the basis of EPR data the site symmetry of Cr³⁺ doped single crystal is discussed. The optical absorption spectra are recorded in 195-925 nm wavelength range at room temperature. The energy values of different orbital levels are determined. On the basis of EPR and optical data, the nature of bonding in the crystal is discussed. The values of different parameters are B=803, C=3531, D_q=2208 cm⁻¹, h=0.59 and k=0.21, where B and C are Racah parameters, D_q is crystal field parameter and h and k are nephelauxetic parameters, respectively.     

Determination of A0 for CH3D from perturbation-allowed transitions

Ground state combination differences obtained from normally allowed and perturbation-allowed transition in the 2ν₆ band of ¹²CH₃D have been fitted to obtain the following values for rotational constants: A₀ = 5.2508231 ± 0.0000043 cm⁻¹, and D₀^K = (−7.869 ± 0.23) × 10⁻⁵cm⁻¹.     

Theoretical line list of D2 O up to 16,000 cm with an accuracy close to experimental

A line list for D₂ ¹⁶O isotopologue of water molecule was calculated in the region 0-16,000 cm⁻¹ with energy levels up to J=30. Variational calculations are based on the semi-theoretical potential energy surface obtained by morphing ab initio potential using the experimental energy levels of D₂ ¹⁶O. For energy levels with J=0, 2, 5 and 10, the standard deviation of the fit is 0.023 cm⁻¹. This line list should make an excellent starting point for spectroscopic modeling and analysis of D₂O rovibrational spectra.     

Pressure dependence of spectral positions and widths of emission lines related to DJ→FJ electronic transitions in Sm ions doped into SrFCl single crystal

The pressure dependence of the peak positions and widths of the fluorescence lines corresponding to the ⁵D_J→⁷F_J electronic transitions in Sm²⁺-doped SrFCl crystals was measured at room temperature (RT) with a diamond anvil cell (DAC) and a high-pressure gas system, using silicone oil and gaseous helium as the pressure-transmitting medium, respectively. At RT and ambient pressure the electronic transitions ⁵D₀→⁷F_J (J= 0, 1, 2, 3) and ⁵D₁→⁷F_J (J=0, 1, 2) in Sm²⁺ ions yielded rather sharp spectral lines peaked at 14490, 14206, 13685, 13012 cm⁻¹ and 15823, 15533, 15012 cm⁻¹, respectively. At pressures up to 45 kbar in the DAC all these peaks shifted linearly to lower energies at the rates −2.36, −2.10, −2.43, −2.22 cm⁻¹/kbar and −2.35, −2.33, −2.47 cm⁻¹/kbar. Under purely hydrostatic gas pressure up to 7 kbar at RT the initial (normal pressure) widths of the ⁵D₀→⁷F₀, ⁵D₀→⁷F₁ and ⁵D₁→⁷F₀ lines having a Lorentzian profile (with corrected FWHM values of 1.55, 5.71 and 1.97 cm⁻¹) decreased linearly with increasing pressure at the rates −0.009(2), −0.077(3) and −0.034(2) cm⁻¹/kbar, respectively. Possible mechanisms of the observed pressure effects are discussed. For further studies of linewidth variations with the pressure, gaseous helium as a best possible high-pressure medium is strongly recommended.     

Stark-Effekt-Untersuchungen in der Hyperfeinstruktur der 3s 2 3d 2 D 5/2- und2 D 3/2-Terme des Al I-Spektrums

The resonance fluorescence of the transitions 3d ² D _5/2,3/2 3p ² P _3/2,1/2 in the Al I-spectrum was observed as a function of a magnetic field. Adding an electric field parallel to the magnetic field the shifts of level crossing signals caused by the Stark effect of the electric field were used to separate overlapping signals of the 3d ² D _5/2- and 3d ² D _3/2-states. The following values of the Stark parametersβ of both states and the hyperfine structure constantsA andB of the 3d ² D _3/2-states were deduced: 3d ² D _3/2∶ ¦A¦=99(1) Me/sec · g_J/0,8,B/A=?0,22(12), ¦β¦=0.45 (8) Mc/sec/(kV/cm)² · g_J,/0.8, A/β< 0 3d²D_5/2∶ ¦β¦=0.16 (4) Mc/sec/(kV/cm)² · g_J/1.2, A/β>0. Some qualitative aspects of interconfiguration mixing in the 3d²D-states are discussed.     

Ethane spectrum between 1940 and 2152 cm−1: Ground state parameters

The absorption spectrum of ethane was recorded between 1940 and 2152 cm^?1 at a resolution of 0.025 cm^?1. Ground state parameters were determined from the principal band in this region, ν₉ + ν₁₂(E_u): B₀ = 0.6630353 cm^?1, D₀^J = 1.0406 × 10^?6 cm^?1, D₀^JK = 2.575 × 10^?6 cm^?1 (standard errors are 7, 8, and 13, respectively, in the last digits quoted). The quoted values are from the analyses of 269 ground state combination differences, the standard deviation of the least-squares analysis was 0.0032 cm^?1.     

Vibrational assignment of isoxazole aided by rovibrational data and density functional theory

IR and Raman spectra of isoxazole and D₃-isoxazole are reassigned with the aid of density functional theory calculations at the B3LYP/6-311+G(d,p) level. Harmonic wavenumber values of all non-CH stretch modes give an r.m.s. deviation from experimental values of 3 cm⁻¹ when they are uniformly scaled by 0.9818. Anharmonic values obtained using a second-order perturbative approach show an r.m.s. deviation of 7.6 cm⁻¹. Results of equal quality are obtained for D₃-isoxazole. Predicted Raman and IR band strengths match experimental spectra very closely. Detailed re-examination of rovibrational constants and inertial defect data from high resolution IR spectra, in comparison with values from the anharmonic frequency calculation, provides confirmation of the vibrational assignments. ‘Dark state’ fundamentals ν₁₂ (900.2 cm⁻¹) and ν₁₅ (866 cm⁻¹) are detected through the perturbations they cause in nearby bands.     

Single crystal EPR and optical absorption study of Cr doped l-histidine hydrochloride monohydrate

EPR study of the Cr³⁺ ion doped l-histidine hydrochloride monohydrate single crystal is done at room temperature. Two magnetically inequivalent interstitial sites are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The zero field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations and the parameters are: D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.9108±0.0002, g_y=1.9791±0.0002, g_z=2.0389±0.0002, A_x=(252±2)×10⁻⁴ cm⁻¹, A_y=(254±2)×10⁻⁴ cm⁻¹, A_z=(304±2)×10⁻⁴ cm⁻¹ for site I and D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.8543±0.0002, g_y=1.9897±0.0002, g_z=2.0793±0.0002, A_x=(251±2)×10⁻⁴ cm⁻¹, A_y=(257±2)×10⁻⁴ cm⁻¹, A_z=(309±2)×10⁻⁴ cm⁻¹ for site II, respectively. The optical absorption studies of single crystals are also carried out at room temperature in the wavelength range 195-925 nm. Using EPR and optical data, different bonding parameters are calculated and the nature of bonding in the crystal is discussed. The values of Racah parameters (B and C), crystal field parameter (Dq) and nephelauxetic parameters (h and k) are: B=636, C=3123, Dq=2039 cm⁻¹, h=1.46 and k=0.21, respectively.     

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

A study on interface states density distribution and characteristic parameters of the In/SiO₂/p-Si (MIS) capacitor has been made. The thickness of the SiO₂ film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 Å. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Ω and 0.592 eV, respectively. The energy distribution of the interface state density D_it was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44×10¹³ eV⁻¹ cm⁻² in 0.329-E_v eV to 1.11×10¹³ eV⁻¹ cm⁻² in 0.527-E_v eV at room temperature. Furthermore, the values of interface state density D_it obtained by the Hill-Coleman method from the C-V characteristics range from 52.9×10¹³ to 1.11×10¹³ eV⁻¹ cm⁻² at a frequency range of 30kHz-1 MHz. These values of D_it and R_s were responsible for the non-ideal behaviour of I-V and C-V characteristics.     

Vibration-rotation spectra of ethane and deuteroethanes: The ν2 band of CH3CD3

The ν₂ band of CH₃CD₃ has been measured under an effective resolution of 0.04 cm^?1. About 400 transitions observed in the region from 2130 to 2060 cm^?1 have been identified as due to the ν₂ fundamental band. The least-squares analysis of these transitions yields the band constants: ν₀ = 2089.957, B′ = 0.548937, D_J′ = 6.97 × 10^?7, D_JK′ = 1.92 × 10^?6, A′ - A″ = ?0.01158, and D_K′ - D_K″ = 1.30 × 10^?6 cm^?1. The ground-state constants B″, D_J″, and D_JK″ are fixed to the values obtained from microwave spectroscopy.     

High-resolution infrared spectra of bicyclo[1.1.1]pentane

Infrared spectra of bicyclo[1.1.1]pentane (C₅H₈) have been recorded at a resolution (0.0015 cm⁻¹) sufficient to resolve for the first time individual rovibrational lines. This initial report presents the ground state constants for this molecule determined from the detailed analysis of three of the ten infrared-allowed bands, ν₁₄(e′) at 540 cm⁻¹, ν₁₇ (a₂″) at 1220 cm⁻¹, ν₁₈(a₂″) at 832 cm⁻¹, and a partial analysis of the ν₁₁(e′) band at 1237 cm⁻¹. The upper states of transitions involving the lowest frequency mode, ν₁₄(e′), show no evidence of rovibrational perturbations but those for the ν₁₇ and ν₁₈ (a₂″) modes give clear indication of Coriolis coupling to nearby e′ levels. Accordingly, ground state constants were determined by use of the combination-difference method for all three bands. The assigned frequencies provided over 3300 consistent ground state difference values, yielding the following constants for the ground state (in units of cm⁻¹): B₀ = 0.2399412(2), D_J = 6.024(6) × 10⁻⁸, D_JK = −1.930(21) × 10⁻⁸. For the unperturbed ν₁₄(e′) fundamental, more than 3500 transitions were analyzed and the band origin was found to be at 540.34225(2) cm⁻¹. The numbers in parentheses are the uncertainties (two standard deviations) in the values of the constants. The results are compared with those obtained previously for [1.1.1]propellane and with those computed at the ab initio anharmonic level using the B3LYP density functional method with a cc-pVTZ basis set.     

Lebensdauer- und Hyperfeinstrukturmessungen an einigen angeregten Zuständen der Konfiguration 4d 9 5p im Pd I-Spektrum mit der Level-crossing-Methode

Lifetimes and hfs coupling constants of some excited states of the 4d ⁹ 5p configuration of Pd I have been determined in a level crossing experiment by observing the field dependence of the polarization of the fluorescence radiation in a magnetic field. From the halfwidths of the measured zero field level crossing signals one obtains the mean lifetimes of the following fine structure states:τ(³P ₁ ⁰ )=(7.46±0.32)nsec;τ(³ P ₂ ⁰ )=(6.9±0.76)nsecτ(³P ₁ ⁰ )=(4.99±0.35)nsec;τ(³ D ₁ ⁰ )=(4.89±0.40)nsecτ((³D ₃ ⁰ )=(6.99±0.49)nsec;τ(³ F ₄ ⁰ )=(7.09±0.46)nsec.Δm=2 crossing signals were detected in the³ P ₁ ⁰ ,³D ₃ ⁰ and³F ₄ ⁰ -states of the odd isotope¹⁰⁵Pd. A detailed analysis of the experimental curves yields the hfs coupling constantsA andB of these states:A(³P ₁ ⁰ )=?(133±2) Mc/sec;B(³ P ₁ ⁰ )=(140±30) Mc/secA(³D ₃ ⁰ )=?(120±10) Mc/sec;B(³ D ₃ ⁰ )=?(660±100) Mc/secA(³F ₄ ⁰ )=?(87±2) Mc/sec;B(³ F ₄ ⁰ )=?(330±30) Mc/sec. A theoretical calculation of the hfs constants is given on the basis of reduced matrix elements. Within the limit of the errors these values agree with the experimental ones. The nuclear electric quadrupole moment deduced from the measuredB values isQ (¹⁰⁵Pd)=(0.8±0.3)·10^?24 cm² (without corrections).     

Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1 1 1)

GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si(1 1 1) substrate by metal-organic chemical vapor deposition (MOCVD). According to the FWHM values of 0.166° and 14.01 cm⁻¹ of HDXRD curve and E₂ (high) phonon of Raman spectrum respectively, we found that the crystal quality is perfect. And based on the XRD spectrum, the crystal lattice constants of Si (a = 5.3354 ?) and H-GaN (a_epi = 3.214 ?, c_epi = 5.119 ?) have been calculated for researching the tetragonal distortion of the sample. These results indicate that the GaN epilayer is in tensile strain and Si substrate is in compressive strain which were good agreement with the analysis of Raman peaks shift. Comparing with typical values of screw-type (D_screw = 7 × 10⁸ cm⁻²) and edge-type (D_edge = 2.9 × 10⁹ cm⁻²) dislocation density, which is larger than that in GaN epilayers growth on SiC or sapphire substrates. But our finding is important for the understanding and application of nitride semiconductors.