首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
Summary The power absorption coefficient (α) forn-hexane (C6),n-heptane (C7),n-dodecane (C12) andn-tetradecane (C14), benzene and cyclohexane has been studied at 20 °C, in the wave number range 20 to 300 cm−1 within an accuracy of 2%. The power absorption measurements onn-alkanes (C5−C14 except for C8, C11 and C13) are discussed in conjunction with the dielectric loss in the frequency range (9⋎140) GHz. The results indicate that, unlike other nonpolar liquids,n-alkanes show a broad dielectric dispersion in the microwave frequency range followed by a second dispersion in the far infra-red. The results are interpreted in terms of a dipole moment of 0.09 D in alkanes. A possible explanation for the origin of the dipole moment is discussed. A reference is also made to measurements of the dielectric loss and the Stark effect on the lower-series alkanes in the gas phase.
Riassunto Si è studiato il coefficiente di assorbimento di potenza (α) pern-esano (C6),n-eptano (C7),n-dodecano (C12) en-tetradecano (C14), nel benzene e nel cicloensano a 20 °C nell’intervallo di numeri d’onda da 20 a 300 cm−1 con un’accuratezza del 2%. Le misurazioni dell’assorbimento di potenza neglin-alcani (C5−C14, eccetto che per C8, C11 e C13) sono discusse insieme alla perdita dielettrica nell’intervallo di frequenza (9⋎140) GHz. I risultati indicano che, diversamente da altri liquidi non polari, glin-alcani mostrano un’ampia dispersione dielettrica nell’intervallo di frequenza delle microonde, seguíta da una seconda dispersione nel lontano infrarosso. I risultati sono interpretati in termini di un momento dipolare di 0.09 D negli alcani. Si discute una possibile spiegazione dell’origine del momento dipolare. Si fa anche un accenno alle misurazioni della perdita dielettrica e dell’effetto di Stark sugli alcani della serie inferiore in fase gassosa.
  相似文献   

2.
3.

Time-resolved spectra, decay kinetics and polarization of the transient optical absorption induced by irradiation of additively colored BeO crystals with electron pulses have been studied. It has been established that the two bands at 3.8 and 4.3 v eV of the transient optical absorption are due to the transitions between triplet and singlet excited states of F -centres in BeO. The polarization of excited F -centres absorption is discussed on the basis of analysis of the splitting of singlet and triplet states in crystalline field of the C 3v symmetry.  相似文献   

4.
Thin films of polymer electrolyte based on poly(ethylene oxide) doped with sodium iodide (NaI) were prepared using the solution cast method. The films obtained have average thickness of 70 μm and different NaI concentrations. Absorption and reflectance spectra of UV-radiation were studied in the wavelength range 300-800 nm. The optical results were analyzed in terms of absorption formula for non-crystalline materials.The optical energy gap and the basic optical constants, refractive index, and dielectric constants of the prepared films have been investigated and showed a clear dependence on the NaI concentration. The interpreted absorption mechanism is a direct electron transition.The observed optical energy gap for neat poly(ethylene oxide) is about 2.6 eV, and decreases to a value 2.36 eV for the film of 15 wt% NaI content. It was found that the calculated refractive index and the dielectric constants of the polymer electrolyte thin films increase with NaI content. Models were used to describe the dependences of the dielectric constant on the NaI concentration, and the refractive index on the incident photon energy.  相似文献   

5.
Single crystals of tyrosine-doped glycine (TRG) were successfully grown by slow evaporation technique at room temperature. Crystals of TRG were obtained in a period of 30 days. X-ray diffraction (XRD) analysis reveals that the crystal belongs to monoclinic system with non-centrosymmetric space group of p21. The presence of functional groups was estimated by Fourier transform infra-red (FTIR) analysis. The optical cut-off wavelength for this crystal was observed by UV–vis absorbance spectra. Electrical measurements (dielectric, AC conductivity) were carried out at temperatures 40, 80, and 120 °C. The results indicate that the values of dielectric constant and dielectric loss are less at higher frequencies.  相似文献   

6.
Impurity optical absorption in parabolic quantum well   总被引:1,自引:0,他引:1  
Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state → conduction band transitions considered as well.  相似文献   

7.
在氩气、空气混合气体介质阻挡放电中,首次利用光谱方法,测量了圆圈点放电丝中圆圈放电和中心点放电的振动温度,并研究了它们随空气含量的变化.振动温度的计算利用的是氮分子第二正带系(C3Ⅱu→B 3Ⅱg)的发射谱线.结果表明:圆圈放电的振动温度高于中心点放电的振动温度;二者均随空气含量的增加而增加,但圆圈放电振动温度的增加速...  相似文献   

8.
Owing to impurity concentration, is important in chalcogenide glass to study various commercial applications, this paper presents a novel technique to measure the impurity concentration in chalcogenide glass at wavelength of 633 nm and 1500 nm using optical principle. Here both reflection and absorption losses are considered to estimate the same impurities. Reflectance is found using plane wave expansion method, where absorption factor is determined using Maxwell's curl equations. Simulation result reveals that reflectance, absorption factor and transmitted intensity vary linearly with respect to different impurity concentrations. The excellent linear variation of transmitted intensity gives an accurate measurement of impurity concentration in chalcogenide at aforementioned wavelength.  相似文献   

9.
马春生  刘式墉 《光学学报》1992,12(3):47-251
本文运用微分法由梯形截面介质光波导的近似模方程导出了模吸收损耗系数的公式.并结合计算实例进行了误差分析.  相似文献   

10.
多层介质膜的体吸收与界面吸收研究   总被引:3,自引:1,他引:2  
以TiO_2/SiO_2膜系为例,报道了用横向光热偏转技术研究多层介质膜体、面吸收的实验方法与实验结果.文中对实验结果作了分析讨论并把它与文献报道的光声法作了比较.  相似文献   

11.
Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn12O12 can open a band gap of 14.5 meV in graphene, increase its optical absorption by 1.67 times covering the visible spectrum which extends to the infra-red (IR) range, and exhibits a slight non-linear I–V characteristic depending on the applied bias. These findings envisage that a graphene/Zn12O12 heterostructure can be appropriate for energy harvesting, photodetection, and photochemical devices.  相似文献   

12.
The microwave absorption properties of zinc oxide/carbonyl iron composite nanoparticles fabricated by high energy ball milling were studied at 0-20 GHz. Experiments showed that ZnO as a kind of dielectric material coating carbonyl iron particles made the bandwidth of reflection loss (RL)<−5 dB expanding to the low frequency, and enhanced absorption effect obviously. For a 3 mm thickness absorber of ZnO/carbonyl iron after 30 h milling, the values of RL<−5 dB and RL<−8 dB were obtained in the frequency range from 7.0 GHz to 17.8 GHz and from 9.8 dB to 14.9 dB, respectively, and its strongest RL peak was −29.34 dB at 13.59 GHz. The magnetic loss of carbonyl iron particles and the dielectric loss of ZnO particles were the main mechanisms of microwave absorption for the composites.  相似文献   

13.
Soluble polyaniline (PANI) doped with dodecylbenzene sulfonic acid (DBSA) was synthesized by chemical oxidation method and was cast on glass using homemade spray, a simple technology used for coating thin film in order to replace other costly complicated techniques. The PANI–DBSA was characterized by FTIR, XRD and UV–vis techniques. The TGA results illustrated that they are three major stages of weight loss of the PANI–DBSA sample. D.C. and A.C. study was performed by pelletizing the sample. D.C. conductivity obtained at room temperature was 3.753 × 10−3 S/cm. The A.C. conductivity and dielectric properties was analyzed in the frequency range 100–1000 kHz which indicates that the value of dielectric constant and loss tangent increases with increase in temperature and decreases with increase in frequency and in addition it supports the hopping mechanism. Current density–voltage (JV) measurements was used to characterize ITO/PANI–DBSA/Al device. The value of various junction parameters such as ideality factor, barrier height and saturation current density was calculated.  相似文献   

14.
In this work, a poly(o-toluidine) “POT” was synthesized by chemical oxidative polymerization method in aqueous media. High uniform and good adhesion thin films of POT have been successfully deposited by the spin coating technique. The films were characterized by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The XRD pattern of the POT shows the semi-crystalline nature of the films. FTIR studies show the information of functional groups in POT. The optical transmittance and reflectance of POT film was measured in the 200–2500 nm wavelength range. The absorption coefficient analysis shows that the optical band gaps of POT film are direct allowed transition band gaps with 1.2 and 2.6 eV. Other optical absorption parameters such as extinction molar coefficient, oscillator strength and electric dipole strength were also calculated. The dispersion parameters were determined and discussed based on the single oscillator model. According to the analysis of dispersion curves some important parameters such as dispersion energy (Ed), oscillator energy (Eo), high frequency dielectric constant (ε) and lattice dielectric constant (εL) were also evaluated. Discussion of the obtained results and their comparison with the previous published data were also given. The obtained desirable results of POT thin film can be useful for the optoelectronic applications.  相似文献   

15.
The subband structure and optical properties of a cylindrical quantum well wire under intense non-resonant laser field are investigated by taking into account the correct dressing effect for the confinement potential. The energy levels and wave functions are calculated within the effective mass- approximation using a finite element method. It is found that the absorption coefficient and the saturation intensity are strongly affected by the laser amplitude and frequency as well as by the incident light polarization. As a key result, a large anisotropy in the linear and nonlinear optical absorptions for very intense laser field is predicted. These effects can be useful for the design of polarization sensitive devices.  相似文献   

16.
In this paper, a formula for accurate calculation of the absorption coefficient of optical material is deduced by the relationship of its transmissivity, refractive index and absorption coefficient. Because the values of transmissivity and refractive index of the optical material with a higher accuracy can be determined by the instruments or obtained directly from the references, the calculated results of the absorption coefficients with a higher accuracy is certified. The absorption coefficients of some optical materials are calculated with it, and the results are discussed.  相似文献   

17.
In this paper, we show that the photoluminescence (PL) shifts of p-type porous silicon (PS) are mainly attributed to some morphological changes related to anodisation conditions. We discuss how differences in the stirring and nature of the electrolytic solution can lead to morphological changes of the PS layers. It has been found that when PS is formed in pure aqueous HF solution, it can exhibit a non-conventional and reproducible “porosity – PL peak relationship”. By correlating the PL spectral behaviour and PS morphology throughout a quantum-confinement model, we explain both conventional and non-conventional PL shifts. Correlation of PL and optical absorption (OA) shows that the PL peak energy and the optical absorption edge of PS exhibit the same trend with size effect. The spectral behaviour of OA with regard to that of PL is well analysed within the quantum-confinement model throughout the sizes and shapes of the nanocrystallites forming PS. The value of the effective band gap energy determined from the calculated lowest PL energy almost corresponds to that estimated from the optical absorption coefficient. These results suggest that the lowest radiative transition between the valence band and the conduction band corresponds to the largest luminescent wires, and that the radiative recombination process leading to the PL emission occurs in the c-Si crystallite core.  相似文献   

18.
19.

In the present work pre-irradiation annealing effect was investigated in albite, NaAlSi 3 O 8 , a silicate crystal. Albite powder samples were heated at 500, 600, 700, 800 and 900 v C for 40 minutes, and then submitted to n -irradiation. Results show that first TL peak (around 160 v C) decreases with annealing temperature, while higher temperature peaks strongly increase. EPR signal around g factor 2, attributed to Al-O m -Al centers, increase with annealing temperature too, as well as optical absorption bands that appear in the crystal after relatively strong n -dose irradiation (of some kGys).  相似文献   

20.
An organic material glycinium trifluoroacetate (GTFA) has been re-synthesized and large single crystals have been grown by solution technique. Complete structure of GTFA has been redetermined from single crystal XRD data. FTIR confirmed the presence of various functional groups. Melting point (152.44 °C), thermal stability and specific heat were studied from TG/ DTA and DSC. In UV absorption spectra, a lower cutoff value as 220 nm and a wide band gap as 4.86 eV for GTFA were observed. The dielectric studies, dielectric constant and loss were measured at different temperatures (30-90 °C) in the frequency range 100 Hz-2 MHz.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号