Microwave and far-infra-red dielectric absorption inn-alkanes

Summary The power absorption coefficient (α) forn-hexane (C₆),n-heptane (C₇),n-dodecane (C₁₂) andn-tetradecane (C₁₄), benzene and cyclohexane has been studied at 20 °C, in the wave number range 20 to 300 cm⁻¹ within an accuracy of 2%. The power absorption measurements onn-alkanes (C₅−C₁₄ except for C₈, C₁₁ and C₁₃) are discussed in conjunction with the dielectric loss in the frequency range (9⋎140) GHz. The results indicate that, unlike other nonpolar liquids,n-alkanes show a broad dielectric dispersion in the microwave frequency range followed by a second dispersion in the far infra-red. The results are interpreted in terms of a dipole moment of 0.09 D in alkanes. A possible explanation for the origin of the dipole moment is discussed. A reference is also made to measurements of the dielectric loss and the Stark effect on the lower-series alkanes in the gas phase.

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Riassunto Si è studiato il coefficiente di assorbimento di potenza (α) pern-esano (C₆),n-eptano (C₇),n-dodecano (C₁₂) en-tetradecano (C₁₄), nel benzene e nel cicloensano a 20 °C nell’intervallo di numeri d’onda da 20 a 300 cm⁻¹ con un’accuratezza del 2%. Le misurazioni dell’assorbimento di potenza neglin-alcani (C₅−C₁₄, eccetto che per C₈, C₁₁ e C₁₃) sono discusse insieme alla perdita dielettrica nell’intervallo di frequenza (9⋎140) GHz. I risultati indicano che, diversamente da altri liquidi non polari, glin-alcani mostrano un’ampia dispersione dielettrica nell’intervallo di frequenza delle microonde, seguíta da una seconda dispersione nel lontano infrarosso. I risultati sono interpretati in termini di un momento dipolare di 0.09 D negli alcani. Si discute una possibile spiegazione dell’origine del momento dipolare. Si fa anche un accenno alle misurazioni della perdita dielettrica e dell’effetto di Stark sugli alcani della serie inferiore in fase gassosa.

     

Transient optical absorption of excited F -centres in BeO

Time-resolved spectra, decay kinetics and polarization of the transient optical absorption induced by irradiation of additively colored BeO crystals with electron pulses have been studied. It has been established that the two bands at 3.8 and 4.3 v eV of the transient optical absorption are due to the transitions between triplet and singlet excited states of F -centres in BeO. The polarization of excited F -centres absorption is discussed on the basis of analysis of the splitting of singlet and triplet states in crystalline field of the C 3v symmetry.     

A study on optical absorption and constants of doped poly(ethylene oxide)

Thin films of polymer electrolyte based on poly(ethylene oxide) doped with sodium iodide (NaI) were prepared using the solution cast method. The films obtained have average thickness of 70 μm and different NaI concentrations. Absorption and reflectance spectra of UV-radiation were studied in the wavelength range 300-800 nm. The optical results were analyzed in terms of absorption formula for non-crystalline materials.The optical energy gap and the basic optical constants, refractive index, and dielectric constants of the prepared films have been investigated and showed a clear dependence on the NaI concentration. The interpreted absorption mechanism is a direct electron transition.The observed optical energy gap for neat poly(ethylene oxide) is about 2.6 eV, and decreases to a value 2.36 eV for the film of 15 wt% NaI content. It was found that the calculated refractive index and the dielectric constants of the polymer electrolyte thin films increase with NaI content. Models were used to describe the dependences of the dielectric constant on the NaI concentration, and the refractive index on the incident photon energy.     

Growth,optical and dielectric studies of tyrosine-doped glycine

Single crystals of tyrosine-doped glycine (TRG) were successfully grown by slow evaporation technique at room temperature. Crystals of TRG were obtained in a period of 30 days. X-ray diffraction (XRD) analysis reveals that the crystal belongs to monoclinic system with non-centrosymmetric space group of p21. The presence of functional groups was estimated by Fourier transform infra-red (FTIR) analysis. The optical cut-off wavelength for this crystal was observed by UV–vis absorbance spectra. Electrical measurements (dielectric, AC conductivity) were carried out at temperatures 40, 80, and 120 °C. The results indicate that the values of dielectric constant and dielectric loss are less at higher frequencies.     

Impurity optical absorption in parabolic quantum well

Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state → conduction band transitions considered as well.     

两电介质间慢速原子的吸收特性

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微穿孔介电弹性体薄膜的吸声性能试验分析*

针对普通薄膜型降噪结构的吸声性能较差和吸声带宽较窄的问题,本文设计了一种微穿孔的介电弹性体薄膜吸声结构。该结构由穿孔的介电弹性体薄膜与背腔组合而成,目的是拓宽介电弹性体薄膜低频率段的吸声带宽。针对微穿孔的介电弹性体薄膜吸声结构,从试验角度分析穿孔薄膜初始厚度、穿孔孔径及穿孔间距对结构吸声性能的影响。分析结果可知：通过适当增加薄膜的初始厚度,薄膜的整体吸声性能得到有效提升,最大可将319Hz吸声频带的吸声系数从0.2提升至0.7;减小薄膜的穿孔孔径能够有效拓宽穿孔薄膜的吸声频带,可使吸声系数0.4以上的吸声带宽由304Hz拓宽至432Hz;适当控制穿孔间距能够达到更好的吸声效果。     

介质阻挡放电中圆圈点放电丝的分子振动温度

在氩气、空气混合气体介质阻挡放电中,首次利用光谱方法,测量了圆圈点放电丝中圆圈放电和中心点放电的振动温度,并研究了它们随空气含量的变化.振动温度的计算利用的是氮分子第二正带系(C3Ⅱu→B 3Ⅱg)的发射谱线.结果表明:圆圈放电的振动温度高于中心点放电的振动温度;二者均随空气含量的增加而增加,但圆圈放电振动温度的增加速...     

梯形截面介质光波导的模吸收损耗

本文运用微分法由梯形截面介质光波导的近似模方程导出了模吸收损耗系数的公式.并结合计算实例进行了误差分析.     

用吸收光谱法测量COIL的水汽含量

 分析了利用吸收光谱法测量氧碘化学激光器的水汽含量的原理,在氯气流量为0.1 mol/s的N₂-COIL上进行了测试实验。实验结果显示,在常规工作条件下,由于BHP温度变化所引起的水汽百分含量变化仅为0.1%,可以忽略;水汽含量随稀释气体流量增大而增加,气体流速是引起水汽含量变化的主要原因,实验中应把氯气和氧气的比例控制在4∶1之内。     

Measurement of impurity concentration in chalcogenide glasses using optical principle

Owing to impurity concentration, is important in chalcogenide glass to study various commercial applications, this paper presents a novel technique to measure the impurity concentration in chalcogenide glass at wavelength of 633 nm and 1500 nm using optical principle. Here both reflection and absorption losses are considered to estimate the same impurities. Reflectance is found using plane wave expansion method, where absorption factor is determined using Maxwell's curl equations. Simulation result reveals that reflectance, absorption factor and transmitted intensity vary linearly with respect to different impurity concentrations. The excellent linear variation of transmitted intensity gives an accurate measurement of impurity concentration in chalcogenide at aforementioned wavelength.     

多层介质膜的体吸收与界面吸收研究

以TiO_2/SiO_2膜系为例,报道了用横向光热偏转技术研究多层介质膜体、面吸收的实验方法与实验结果.文中对实验结果作了分析讨论并把它与文献报道的光声法作了比较.     

Neutralization of charged dielectric materials using a dielectric barrier discharge

Safety and efficiency are two characteristics that must be satisfied by an electric charge neutralizer. The dielectric barrier discharge (DBD), which has the advantage of preventing arc transition, is an interesting tool to safely neutralize unwanted charge. This paper is aimed at studying the efficiency of neutralizing charged polyethylene (PE) granules by using a dielectric barrier discharge. During this study, several factors were considered such as the amplitude and the frequency of the AC voltage, the polarity and the charging mode of the samples, as well as the electrode configuration. Two DBD electrode configurations were considered: simple DBD and a DBD with installed metallic grid. The obtained results show that using the DBD can lead to excellent neutralization results when the grid is installed. With the appropriate voltage amplitude and frequency and with grid installed, the elimination of nearly 99% of the initial surface charges can be achieved. The metallic grid placed between the DBD electrode and the target enhances significantly the neutralization efficiency.     

Band gap opening and optical absorption enhancement in graphene using ZnO nanocluster

Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn₁₂O₁₂ can open a band gap of 14.5 meV in graphene, increase its optical absorption by 1.67 times covering the visible spectrum which extends to the infra-red (IR) range, and exhibits a slight non-linear I–V characteristic depending on the applied bias. These findings envisage that a graphene/Zn₁₂O₁₂ heterostructure can be appropriate for energy harvesting, photodetection, and photochemical devices.     

Electronic band structure and optical properties of silicon nanoporous pillar array

Silicon nanoporous pillar array (Si-NPA) is fabricated by hydrothermally etching single crystal silicon (c-Si) wafers in hydrofluoric acid containing ferric nitrate. Microstructure studies disclosed that it is a typical micron/nanometer structural composite system with clear hierarchical structures. The optical parameters of Si-NPA were calculated by general light-absorption theory and Kramers–Kronig relations based on the experimental data of reflectance and the variations compared with the counterparts of c-Si were analyzed. The features of the electronic band structure deduced from the optical measurements strongly indicate that Si-NPA material is a direct-band-gap semiconductor and possesses separated conduction sub-bands which accords with conduction band splitting caused by silicon nanocrystallites several nanometers in size. All these electronic and optical results are due to the quantum confinement effect of the carriers in silicon nanocrystallites.     

Enhanced microwave absorption in ZnO/carbonyl iron nano-composites by coating dielectric material

The microwave absorption properties of zinc oxide/carbonyl iron composite nanoparticles fabricated by high energy ball milling were studied at 0-20 GHz. Experiments showed that ZnO as a kind of dielectric material coating carbonyl iron particles made the bandwidth of reflection loss (RL)<−5 dB expanding to the low frequency, and enhanced absorption effect obviously. For a 3 mm thickness absorber of ZnO/carbonyl iron after 30 h milling, the values of RL<−5 dB and RL<−8 dB were obtained in the frequency range from 7.0 GHz to 17.8 GHz and from 9.8 dB to 14.9 dB, respectively, and its strongest RL peak was −29.34 dB at 13.59 GHz. The magnetic loss of carbonyl iron particles and the dielectric loss of ZnO particles were the main mechanisms of microwave absorption for the composites.     

Noise-driven optical absorption coefficients of impurity doped quantum dots

We make an extensive investigation of linear, third-order nonlinear, and total optical absorption coefficients (ACs) of impurity doped quantum dots (QDs) in presence and absence of noise. The noise invoked in the present study is a Gaussian white noise. The quantum dot is doped with repulsive Gaussian impurity. Noise has been introduced to the system additively and multiplicatively. A perpendicular magnetic field acts as a source of confinement and a static external electric field has been applied. The AC profiles have been studied as a function of incident photon energy when several important parameters such as optical intensity, electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength take on different values. In addition, the role of mode of application of noise (additive/multiplicative) on the AC profiles has also been analyzed meticulously. The AC profiles often consist of a number of interesting observations such as one photon resonance enhancement, shift of AC peak position, variation of AC peak intensity, and bleaching of AC peak. However, presence of noise alters the features of AC profiles and leads to some interesting manifestations. Multiplicative noise brings about more complexity in the AC profiles than its additive counterpart. The observations indeed illuminate several useful aspects in the study of linear and nonlinear optical properties of doped QD systems, specially in presence of noise. The findings are expected to be quite relevant from a technological perspective.     

大气气溶胶粒子光吸收系数的测量

 采用核孔过滤膜累积气溶胶粒子的方法设计了气溶胶粒子光吸收系数的测量系统。该系统由双光路组成,可以减小光路损耗和电路噪声带来的各种测量误差。同时，具有体积小、光路易于调节、可进行实时测量、定标容易等特点。用200和400nm孔径的过滤膜，分别测量了实验室内大气气溶胶粒子对不同波长激光的吸收系数。随着累积时间的增加，系统的测量精度也不断的提高，在累积时间为900s时，系统测量误差为9.849×10^-6/m。     

The study of optical,dielectric and optoelectronic properties of dodecylbenzene sulfonic acid doped polyaniline

Soluble polyaniline (PANI) doped with dodecylbenzene sulfonic acid (DBSA) was synthesized by chemical oxidation method and was cast on glass using homemade spray, a simple technology used for coating thin film in order to replace other costly complicated techniques. The PANI–DBSA was characterized by FTIR, XRD and UV–vis techniques. The TGA results illustrated that they are three major stages of weight loss of the PANI–DBSA sample. D.C. and A.C. study was performed by pelletizing the sample. D.C. conductivity obtained at room temperature was 3.753 × 10⁻³ S/cm. The A.C. conductivity and dielectric properties was analyzed in the frequency range 100–1000 kHz which indicates that the value of dielectric constant and loss tangent increases with increase in temperature and decreases with increase in frequency and in addition it supports the hopping mechanism. Current density–voltage (J–V) measurements was used to characterize ITO/PANI–DBSA/Al device. The value of various junction parameters such as ideality factor, barrier height and saturation current density was calculated.