Ce3+/Eu2+共掺Ca3Si2O4N2荧光粉的光学特性

采用高温固相法制备了一种新型的白光LED用Ca3Si2O4N2∶Eu2+,Ce3+,K+荧光粉。利用X射线衍射仪对样品的物相结构进行了分析,结果表明:Ce3+和K+离子的掺杂没有改变Ca3Si2O4N2∶Eu2+荧光粉的主晶相。利用荧光光谱仪对样品的发光性能进行了测试,发现样品在355 nm激发下得到的发射光谱为峰值位于505 nm的单峰,是Eu2+离子5d-4f电子跃迁引起的。Ca3Si2O4N2∶Eu2+荧光粉通过Ce3+和K+离子的掺杂,发光明显增强。当Ce3+的摩尔分数为1%时,荧光粉的发光强度达到最大值,是单掺Eu2+离子荧光粉发光强度的168%。通过光谱重叠的方法计算Ce3+→Eu2+能量传递临界的距离为2.535 nm。     

白光LED用Ca3Si3O9：Dy3+荧光粉的制备及其发光性能

采用溶胶-凝胶法制备了可用于白光LED的新型Ca₃Si₃O₉:Dy³⁺荧光粉, 通过对样品的X 射线衍射谱及光致发光光谱的测试和表征, 研究了Ca₃Si₃O₉:Dy³⁺的物相结构和发光性能. 结果显示, Ca₃Si₃O₉:Dy³⁺的发射光谱是由位于483 nm和577 nm处的主峰构成的双峰谱线, 激发光谱为多峰宽谱, 谱峰位于290–480 nm范围内. Dy³⁺掺杂浓度对Ca₃Si₃O₉:Dy³⁺发光性能有明显的影响, 随着Dy³⁺浓度的增大, Ca₃Si₃O₉:Dy³⁺的发光强度和黄、蓝光发射强度比 (Y/B) 均呈现先增大后减小的规律, 最大发光强度值对应的Dy³⁺浓度为1 mol%. 电荷补偿剂Li⁺能提高Ca₃Si₃O₉:Dy³⁺的发光强度, 特别当Li⁺浓度为2–4 mol%时, 荧光粉的蓝光发射强度显著增大. 关键词： 白光LED 溶胶-凝胶法 3Si₃O₉：Dy³⁺')" href="#">Ca₃Si₃O₉：Dy³⁺ 发光特性     

Eu2+掺杂浓度对Ca2MgSi2O7∶Eu2+荧光粉发光特性的影响

采用化学共沉淀法制备了Ca_2-xMgSi₂O₇:xEu²⁺绿色荧光粉.用X射线衍射仪、荧光分光光度计及光色综合测试系统对Ca_2-xMgSi₂O₇:xEu²⁺绿色荧光粉的相结构、发光性能进行了测试.结果表明:其激发光谱分布在300–480 nm波长范围,谱峰位于389,430 nm处,可以被InGaN管芯产生的360–480 nm辐射有效激发;在波长为430 nm蓝光激发下,其发射光谱谱峰位于531 nm处.Ca_2-xMgSi₂O₇:xEu²⁺绿色荧光粉的发光强度随Eu²⁺掺杂量的增加而增强,当Eu²⁺掺杂量x为0.04时,发光强度达到最大值,而后开始降低,发生浓度猝灭.根据Dexter能量共振理论,浓度猝灭是由电偶极-电偶极相互作用引起的. 关键词： 2MgSi₂O₇∶Eu²⁺')" href="#">Ca₂MgSi₂O₇∶Eu²⁺ 绿色荧光粉 发光特性 白光发光二极管     

蓝光激发的Y2.93Al5O12∶0.07Ce3+黄色荧光粉的制备及光致发光

以Al₂(SO₄)₃·18H₂O、尿素为原料,采用水热-热解法制备了球形α-Al₂O₃粉体。以自制α-Al₂O₃、Y₂O₃及CeO₂为原料,固相法制备了白光LED用Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉,通过X射线衍射（XRD）、扫描电镜（SEM）、X射线能谱（EDS）及荧光光谱（PL）等对产物的物相、形貌及光致发光性能进行了表征。结果表明：水热-热解法制备出了物相纯净、分散性良好的球形α-Al₂O₃粉体,以该α-Al₂O₃为原料,合成出可被460 nm蓝光有效激发,发射光谱为峰值在550 nm宽带的Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉,色坐标为（0.453,0.531 9）,采用GSAS软件对Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉的XRD图进行了Rietveld结构精修,精修图与XRD测试图完全吻合,Y,Al,Ce,O四元素均匀地分布在黄色荧光粉产物中,Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉的激发光谱由两个部分组成,在340和460 nm处有两个非常明显的吸收峰,Ce3+的4f能级由于自旋-耦合而劈裂为两个光谱支项2F_7/2和2F_5/2,其中2F_5/2为基谱项。340 nm的激发峰对应于2F_5/2→5D_5/2的跃迁,460 nm的激发峰属于2F_7/2→5D_3/2的跃迁,并且460 nm处的激发强度强于340 nm处激发强度。以460 nm为监测波长得到的发射光谱,最强发射峰位于550 nm,Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉是一种适用于白光LED的高性能黄色荧光粉。     

Ca2Li2BiV3O12∶Eu3+荧光粉的制备和发光性能

采用高温固相法成功合成了一种可用于白光LED的Ca₂Li₂BiV₃O₁₂∶Eu³⁺新型红色荧光粉,使用X射线衍射仪和荧光分光光度计对合成样品进行了表征,研究了合成温度和Eu³⁺含量对合成样品相组成和发光性能的影响。结果表明,采用高温固相法在650~700 ℃能合成纯度较高、结晶度好的Ca₂Li₂BiV₃O₁₂∶Eu³⁺荧光粉,合成样品激发带覆盖200~400 nm,发射光谱的线状发射峰可归属于Eu³⁺的⁵D₀→⁷F_J(J= 1, 2, 3,4)特征锐线发射,Eu³⁺摩尔分数为14%时荧光粉的发光强度最大。     

荧光粉Y3Mg2AlSi2O12∶Ce3+的合成及光谱性能研究

采用溶胶-凝胶法合成了Y₃Mg₂AlSi₂O₁₂∶Ce³⁺荧光粉。用X射线粉晶衍射(XRD)仪对其进行了物相分析,用电子扫描电镜(SEM)观察了该荧光粉的形貌,同时测定了激发光谱及发射光谱。结果表明,Y₃Mg₂AlSi₂O₁₂∶Ce³⁺的晶体结构与Y₃Al₅O₁₂(钇铝石榴石)一致,形貌也表现出等轴粒状的特点。发射谱为峰值位于580 nm处的宽带发射,是Ce³⁺的 4f⁶5d¹-4f⁷特征跃迁发射。激发谱表现为340 nm和468 nm的双峰带,可以被蓝光有效的激发。Ce³⁺的浓度对发光强度有明显的影响,当Ce³⁺的摩尔分数为0.06时,发光强度最大。最后考察了成分取代而导致的Y₃Mg₂AlSi₂O₁₂∶Ce³⁺的物相转变和对发光性能的影响。     

Ca3Y2Si3O12：Tm3+,Yb3+上转换发光粉的制备与发光性能研究

采用高温固相法成功制备了Ca₃Y₂Si₃O₁₂：Tm³⁺,Yb³⁺上转换蓝色发光材料。在980 nm 红外激光器激发下,发光粉呈现强烈的蓝光（475 nm）和近红外光（810 nm）以及较弱的红光（650 nm）发射,分别归因于Tm³⁺离子的¹G₄→³H₆、³H₄→³H₆和¹G₄→³F₄能级跃迁。随着Yb³⁺离子浓度的增加,发光粉上转换发射强度和发光亮度均呈现先增强后减弱的变化趋势。在最佳掺杂浓度下（Yb³⁺摩尔分数为15%）,蓝、红光强度分支比为12：1,色坐标为（0.129 2,0.152 3）。在3.9 W/cm²激发功率密度下,发光亮度可达6.8 cd/m²。上述结果证实,所制备发光粉呈现优异的蓝光上转换发射特性并具有潜在的应用价值。发光强度和激发光功率关系表明,所得上转换发射为三光子和双光子吸收过程。借助Tm-Yb体系能级结构详细讨论了上转换发射的跃迁机制。     

Eu2+激活的Ca3SiO5绿色荧光粉的制备和发光特性研究

研究了Eu²⁺激活的绿色发光材料Ca₃SiO₅的制备条件和发光性质. Eu²⁺中心形成主峰值为501 nm和次峰值为570 nm的特征宽带，两峰值叠加形成发射峰值为502nm的绿色发射光谱带. 利用这些光谱结果和Van Uitert 经验公式，确认Ca₃SiO₅:Eu²⁺中存在两种性质有差异的Eu²⁺发光中心，它们分别占据基质中八配位的Ca²⁺(Ⅰ)格位和四配位的Ca²⁺(Ⅱ)格位. 其激发光谱分布在250—450 nm的波长范围，峰值位于375 nm处，可以被InGaN管芯产生的350—410 nm辐射有效激发. 关键词： 发光 荧光粉 绿色荧光粉 3SiO₅')" href="#">Ca₃SiO₅ 2+')" href="#">Eu²⁺     

LED用绿色荧光粉BaSi2N2O2:Eu2+的发光和封装性能

采用高温固相法合成了白光LED用蓝绿色荧光材料BaSi₂N₂O₂:Eu²⁺。用X射线衍射(XRD)、光致发光(PL)等对荧光材料进行了表征。XRD结果表明,所制备的样品为较好的单相。BaSi₂N₂O₂:Eu²⁺在395 nm和460 nm激发下均具有较高的发射强度,发射峰位于492 nm附近。当Eu²⁺的摩尔分数为4%时,可以获得最佳的样品发光强度。将荧光材料封装在紫外和蓝光芯片上制作了LED器件,两种器件均发射出强的蓝绿色荧光,色坐标分别为(0.092 0,0.428 2)和(0.112 9,0.223 0)。     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

Low thermal quenching and high-efficiency Ce, Tb-co-doped Ca3Sc2Si3O12 green phosphor for white light-emitting diodes

Low thermal quenching and high-efficiency Ca₃Sc₂Si₃O₁₂:Ce³⁺ (CSSO:Ce³⁺) phosphors with co-doping Tb³⁺ ion were prepared by a solid state method and the properties of these phosphors were investigated. The results showed that co-doping of Tb³⁺ not only enhances the photoluminescence remarkably and decreases the thermal quenching of the phosphor, but also heightens the performances of the LEDs fabricated with the phosphor. A high-efficiency and low color temperature white LED was fabricated with the prepared CSSO:1%Ce³⁺, 0.5%Tb³⁺ and a red phosphor, indicating that CSSO:1%Ce³⁺,0.5%Tb³⁺ phosphor is a suitable green phosphor for the fabrication of high-efficiency white LEDs.     

SrAl_2B_2O_7:Dy~(3+)材料的制备及其发光性能

采用高温固相法制备了SrAl2B2O7:Dy3+发光材料.在350nm紫外光激发下,测得SrAl2B2O7:Dy3+材料的发射光谱为一个多峰宽谱,主峰分别为480,573和678nm;分别和Dy3+的4F9/2→6H15/2,4F9/2→6H13/2,4F9/2→6H11/2的跃迁发射相对应;监测573nm的发射峰,得到材料的激发光谱为一个多峰宽谱,主峰分别为295,325,350,365,400nm.研究了Dy3+掺杂浓度对SrAl2B2O7:Dy3+材料发射光谱的影响,随着Dy3+掺杂浓度的增大,SrAl2B2O7:Dy3+材料的Iy/Ib逐渐增大,根据Judd-Ofelt理论解释了其原因.随着Dy3+掺杂浓度的增大,Dy3+的4F9/2→6H13/2跃迁产生的573nm发射峰强度先增大,在4%时达到最大值,之后减小,其自身的浓度猝灭机理为电偶极-电偶极相互作用.不同的电荷补偿剂Li+,Na+,K+的引入均使发光强度得到提高,尤其以Li+最佳,发光强度提高了大约33%.     

H3BO3对BaAl2Si2O8：Eu2+蓝色荧光粉物相组成和发光特性的影响

采用化学共沉淀法一次煅烧工艺合成了BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉.用X射线衍射仪、荧光分光光度计和扫描电镜测试了助熔剂H₃BO₃对BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉物相结构、发光性能、形貌等的影响.研究表明：化学共沉淀法一次煅烧工艺合成的BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉为单相,H₃BO₃的加入使基质结构由六方相转变成单斜相,并引起发射主峰位置和发射强度的变化;BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的发光强度随着H₃BO₃加入量的增加先增强,后减弱,当加入H₃BO₃的质量分数为1.5%时,发光强度最大;H₃BO₃的加入使合成BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的颗粒呈类球形,分布更加均匀,粒度更小. 关键词： 3BO₃')" href="#">H₃BO₃ 2Si₂O₈：Eu²⁺')" href="#">BaAl₂Si₂O₈：Eu²⁺ 发光特性 化学共沉淀法     

Theoretical explanation of optical absorption spectra and covalent effect of Ni2+ ions in octahedral sites of Ca3Sc2Ge3O12 crystal

The optical absorption spectra (d-d transition bands) and covalent effect of Ni²⁺ ions in octahedral sites of Ca₃Sc₂Ge₃O₁₂ crystal have been investigated by the full energy matrix based on the two spin–orbit coupling parameters model. The bond length of octahedral site is R_i?=?2.19 Å, which can be determined by the cubic crystal-field parameter and optical spectral data. The lattice distortion of the Ni²⁺ center in Ca₃Sc₂Ge₃O₁₂ crystal is also obtained from the calculations. In addition, the result has shown that the covalent effect of Ni²⁺ ion in the octahedral site of Ga₃Sc₂Ge₃O₁₂ is obvious and cannot be ignored. The calculated d-d transition bands agree well with that of the experimental findings, suggesting that the present methods can explain reasonably the optical spectral data and covalent effect of 3d⁸ ions in octahedral lattices.     

Tb3Sc2Al3O12-TbScO3 eutectic self-organized microstructure for metamaterials and photonic crystals application

Eutectics are the materials with foreseen application in the field of photonic crystals and metamaterials. In this paper, the dependence on chemical composition of the microstructures of terbium-scandium-aluminium gamet and terbium-scandium perovskite (Tb₃Sc₂Al₃O₁₂-TbScO₃) eutectics has been studied. The growth of the eutectic rods by the micro-pulling down method is presented, using compositions with several different volume fractions of the garnet and the perovskite phases, V_TSAG:V_TSP = 4, 3, 2, 1, 1/2. The phases have been characterized by powder X-ray diffraction and energy dispersive spectrometry. The relationship between the lattice constant of individual phases and the chemical composition is presented. The unidirectional growth of microrods has been also investigated by electron backscattering diffraction.     

Effect of substitution of Ce on superconducting properties of Bi1.7Pb0.3Sr2Ca2−x Ce x Cu3O10+δ system

We have investigated the superconducting properties of the Bi_1.7 Pb_0.3Sr₂Ca_2−xCe _x Cu₃O_10+δ system with x=0.00, 0.02, 0.04, 0.08 and 0.1 by X-ray diffraction and magnetic susceptibility. The substitution of Ce for Ca has been found to drastically change the superconducting properties of the system. X-ray diffraction studies on these compounds indicate decrease in the c-parameter with increased substitution of Ce at Ca site and volume fraction of high T _c (2 : 2 : 2 : 3) phase decreases and low T _c phase increases. The magnetic susceptibility of this compound shows that the diamagnetic on set superconducting transition temperature (onset) varies from 109 K to 51 K for x=0.00, 0.02, 0.04, 0.08 and 0.1. These results suggest the possible existence of Ce in a tetravalent state rather than a trivalent state in this system; that is, Ca²⁺ → Ce⁴⁺ replacement changes the hole carrier concentration. Hole filling is the cause of lowering T _c of the system.     

Photoluminescence properties and synthesis of nano-sized YAG: Ce phosphor via novel synthesis method

This study reports an approach for enhancing the luminescent properties of Y₃Al₅O₁₂: Ce³⁺_0.07 using an organic compound precursor. The Y₃Al₅O₁₂: Ce³⁺_0.07 nano-sized phosphors had a relatively uniform particle size, approximately 50-80 nm, when sintered at 1200 °C for 1 h. The photoluminescence results showed the maximum peak intensity when the concentration of Ce³⁺ ions was 0.07 mol. The results suggest that nano-sized phosphors synthesized from organic compound precursors can be used as alternative efficiency emitting phosphors in the LED applications.     

Preparation and luminescence characteristics of Eu^2＋ activated silicate phosphor

This paper synthesizes the Sr2SiO4：Eu^2＋ phosphor by high temperature solid-state reaction. The emission spectrum of Sr2SiO4 ： Eu^2＋ shows two bands centred at 480 and 547 nm, which agree well with the calculation values of emission spectrum, and the location of yellow emission of Sr2SiO4 ： Eu^2＋ is influenced by the Eu^2＋ concentration. The excitation spectrum for 547 nm emission has two bands at 363 and 402 nm. The emission spectrum of white light emitting diodes （w-LEDs） based on Sr2SiO4 ： Eu^2＋ phosphor ＋ InGaN LED was investigated.