反应气压对直流磁控反应溅射制备的氧化银薄膜的结构和光学性质的影响

利用直流磁控反应溅射技术,通过调节反应气压(RP),在250 ℃衬底温度下制备了一系列氧化银 (Ag_xO) 薄膜,并利用X射线衍射谱、能量色散谱和分光光度计重点研究了RP对Ag_xO薄膜的结构和光学性质的影响. 研究结果表明,随着RP从0.5 Pa升高到3.5 Pa,薄膜明显呈现了从两相(AgO+Ag₂O)到单相(Ag₂O)结构再到两相(Ag₂O+AgO)结构的演变. 特 关键词： 氧化银薄膜 直流磁控反应溅射 X射线衍射谱 光学性质     

Evolution of the structural and optical properties of silver oxide films with different stoichiometries deposited by direct-current magnetron reactive sputtering

Nitrogen doping of silver oxide(AgxO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgxO film is a p-type semiconductor with poor conductivity.In this work,a series of AgxO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios(FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.     

直流脉冲磁控反应溅射技术制备掺铝氧化锌薄膜的研究

文章采用直流脉冲磁控反应溅射(DCPsputtering)技术,在不同氧氩比(GFR)条件下玻璃衬底上制备了一系列掺铝氧化锌(AZO)薄膜,并利用X射线衍射、扫描电子显微镜和分光光度计从宏观应力和微观晶格畸变的角度研究了GFR对薄膜结构、表面形貌和光学特性的影响.制备的多晶AZO薄膜呈现了明显的ZnO-(103)择优取向,这归结于3小时薄膜沉积过程中伴随的退火引起的薄膜晶面能转变.随着GFR的增大,AZO薄膜内宏观拉应力先增大到最大值,随后宏观压应力随着GFR的继续增大而增大.薄膜中的宏观应力明显随着GFR从拉应力向压应力转变.这与晶格微观畸变诱导的微观应力的研究结果趋势恰恰相反.随着GFR的增加,薄膜在可见光区的平均透射率先增加后减小,薄膜晶粒尺寸诱导的晶界散射是影响薄膜透射率的主导机制.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag2O film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique,a series of the single-phased Ag2O films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2:3 by changing substrate temperature(T s).Effects of the T s on the microstructure and optical properties of the films are investigated by using X-ray diffractometry,scanning electron microscopy and spectrophotometry.The single-phased Ag2O films deposited at values of T s below 200℃ are(111) preferentially oriented,which may be due to the smallest free energy of the(111) crystalline face.The film crystallization becomes poor as the value of T s increases from 100℃ to 225℃.In particular,the Ag2O film deposited at T s = 225℃ loses the 111 preferential orientation.Correspondingly,the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure.With the increase of T s value,the transmissivity and the reflectivity of the films in the transparent region are gradually reduced,while the absorptivity gradually increases,which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

溅射功率对Mo薄膜微结构和性能的影响

实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

射频磁控反应溅射制备的Ag2O薄膜的椭圆偏振光谱研究

Ag₂O薄膜在新型超高存储密度光盘和磁光盘方面具有潜在的应用前景.利用射频磁控反应溅射技术, 通过调节衬底温度在沉积气压为0.2 Pa、氧氩比为2:3的条件下制备了一系列Ag₂O 薄膜.利用通用振子模型(包括1个Tauc-Lorentz振子和2个Lorentz 振子)拟合了薄膜的椭圆偏振光谱.在1.5-3.5 eV能量区间,薄膜的折射率在2.2-2.7之间, 消光系数在0.3-0.9之间. 在3.5-4.5 eV能量区间,薄膜呈现了明显的反常色散,揭示Ag₂O薄膜的等离子体振荡频率在 3.5-4.5 eV之间. 随着衬底温度的升高,薄膜的光学吸收边总体上发生了红移, 该红移归结于薄膜晶格微观应变随衬底温度的升高而增大. Ag₂O薄膜的光学常数表现出典型的介质材料特性.     

溅射功率对直流磁控溅射Ti膜结构的影响

采用直流磁控溅射方法制备了纯Ti膜,研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构,并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加,当溅射功率为20 W时,原子力显微镜(AFM)图像显示Ti膜光洁、致密,均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型,Ti膜应力先随溅射功率增大而增大,在60 W时达到最大值（为945.1 MPa）,之后随溅射功率的增大有所减小。     

溅射功率对直流磁控溅射Ti膜结构的影响

 采用直流磁控溅射方法制备了纯Ti膜,研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构,并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加,当溅射功率为20 W时,原子力显微镜(AFM)图像显示Ti膜光洁、致密,均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型,Ti膜应力先随溅射功率增大而增大,在60 W时达到最大值（为945.1 MPa）,之后随溅射功率的增大有所减小。     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

基片温度对SiNx薄膜结晶状态及机械性能的影响

利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术,研究了基片温度对SiN_x薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响,并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明,在基片温度低于300℃时制备的SiN_x薄膜以非晶状态存在,硬度值仅为18GPa左右;基片温度 关键词： x')" href="#">SiN_x 磁控溅射 微观结构 硬度     

Structures and optical properties of tungsten oxide thin films deposited by magnetron sputtering of WO_3 bulk:Effects of annealing temperatures

Tungsten oxide thin films were deposited on glass substrates by the magnetron sputtering of WO3 bulk at room temperature. The deposited films were annealed at different temperatures in air. The structural measurements indicate that the films annealed below 300℃ were amorphous, while the films annealed at 400℃ were mixed crystalline with hexagonal and triclinic phases of WO3. It was observed that the crystallization of the annealed films becomes more and more distinct with an increase in the annealing temperature. At 400℃, nanorod-like structures were observed on the film surface when the annealing time was increased from 60 min to 180 min. The presence of W=O stretching, W–O–W stretching, W–O–W bending and various lattice vibration modes were observed in Raman measurements. The optical absorption behaviors of the films in the range of 450–800 nm are very different with changing annealing temperatures from the room temperature to 400℃. After annealing at 400℃, the film becomes almost transparent. Increasing annealing time at 400℃ can lead to a small blue shift of the optical gap of the film.     

沉积参数对SiNx薄膜结构及阻透性能的影响

利用直流脉冲磁控溅射法在室温下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、台阶仪、紫外—可见分光光度计、接触角测量仪、透湿测试仪等表征技术,分析了N₂流量、Si靶溅射功率等实验参数对SiN_x薄膜成分、结构、及阻透性能、透光性能、接触角等性能的影响.研究结果表明,Si靶溅射功率固定时,在低N₂流量条件下,或N₂流量固定时,在高Si靶溅射功率条件下,制备的SiN _{关键词： x}')" href="#">SiN_x 磁控溅射 微观结构 阻透性能     

Spectroscopic ellipsometric study of the optical properties of Ag2O film prepared by direct-current magnetron reactive sputtering

The Ag2O film, as-deposited by direct-current magnetron reactive sputtering at a substrate temperature of 150℃, clearly shows a preferential orientation (111), and is capable of lowering the threshold value of the thermal decomposition temperature to about 200℃, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film.     

Composition, microstructure, and properties of CrNx films deposited using medium frequency magnetron sputtering

CrN_x films were deposited on stainless steel and Si (1 1 1) substrates via medium frequency magnetron sputtering in a N₂ + Ar mixed atmosphere. The influence of N₂ content on the deposition rate, composition, microstructure, mechanical and tribological properties of the as-deposited films was investigated by means of the X-ray photoelectron spectrometry (XPS), X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), nanoindentation and tribometer testing. It was found that the N atomic concentration increased and the phase transformed from a mixture of Cr₂N + Cr(N) to single-phase Cr₂N, and then Cr₂N + CrN to pure CrN phase with the increase of N₂ content. The Cr 2p_3/2 and N 1s of XPS spectra also confirmed the evolution of phase. Accordingly, all films exhibited a typical columnar structure which lies in the zone T of Thornton Model. The mixed Cr₂N and Cr(N) phases showed low hardness and high friction coefficient. Cr₂N possessed higher hardness than CrN while CrN exhibited lower friction coefficient.     

衬底温度对反应磁控溅射W掺杂ZnO薄膜的微观结构及光电性能的影响

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO（WZO）透明导电氧化物薄膜并研究了衬底温度对薄膜微观结构、组分、表面形貌以及光电性能的影响.实验结果表明,WZO薄膜具有良好的（002）晶面择优取向,且适当的衬底温度是制备优质WZO薄膜的关键因素.随着衬底温度升高,薄膜表面粗糙度先增大后减小;衬底温度较高时,薄膜的结构致密,结晶质量好,电子迁移率高.当衬底温度为325℃时,WZO薄膜获得最低电阻率9.25×10^-3Ω·cm,方块电阻为56.24Ω/□,迁移率为11.8 cm² V^-1·s^-1,其在可见光及近红外区域（400—1500 nm）范围的平均透过率达到85.7%.     

Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering

A series of （103）-oriented aluminum-doped zinc oxide （AZO） films were deposited on glass substrates via direct- current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios （GFRs）. The optical properties of the films were characterized using the fitted optical constants in the general oscillator model （which contains two Psemi-Tri oscillators） through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single- oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The pbotoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.     

微波ECR磁控溅射制备SiNx薄膜的XPS结构研究

利用微波电子回旋共振等离子体增强非平衡磁控溅射法在不同N₂流量下制备无氢SiN_x薄膜.通过X光电子能谱、纳米硬度仪等表征技术,研究了不同N₂流量下制备的SiN_x薄膜的化学键结构、化学键含量、元素配比及各元素沿深度分布.研究结果表明,N₂流量是影响SiN_x薄膜化学键结构、元素配比、元素延深度分布等性质的主要因素.在N_{2关键词： x}')" href="#">SiN_x 磁控溅射 XPS 化学键结构     

工作气压对磁控溅射ZnO薄膜结晶特性及生长行为的影响

采用射频反应磁控溅射方法，在Si(001)基片上制备了具有高c轴择优取向的ZnO薄膜.利用原子力显微镜、X射线衍射、透射电子显微镜和透射光谱分析技术，对不同工作气压下合成的ZnO薄膜的表面形貌、微观结构和光学性能进行表征，研究了工作气压对ZnO薄膜的结晶性能以及生长行为的影响.研究结果显示：对于Ar/O₂流量比例接近1∶1的固定比值下，ZnO薄膜的生长行为主要取决于成膜空间中氧的密度，临界工作气压介于0.5—1.0 Pa之间.当工作气压小于临界值时，ZnO薄膜的成核密度较高，且随工作气压的变化明显，ZnO的生长行为受控于氧的密度，属于氧支配的薄膜生长；当工作气压大于临界值以后，ZnO薄膜的成核密度基本保持不变，Zn原子的数量决定薄膜的生长速率；在0.1—5.0 Pa的工作气压范围内，均可获得高度c轴取向的ZnO薄膜，但工作气压的变化改变着ZnO晶粒之间的界面特征和取向关系.随着工作气压的增加，ZnO晶粒之间的界面失配缺陷减少，但平面织构特征逐渐消失，三叉晶界的空洞逐渐扩大，薄膜的密度下降，折射率减小. 关键词： ZnO薄膜 磁控溅射 表面形貌 微观结构 光学性能     

生长温度对磁控溅射ZnO薄膜的结晶特性和光学性能的影响

采用反应射频磁控溅射方法，在Si (100) 基片上制备了具有高c轴择优取向的ZnO薄膜.利用 原子力显微镜、透射电子显微镜、X射线衍射分析、拉曼光谱等表征技术，研究了沉积温度 对ZnO薄膜的表面形貌、晶粒尺度、应力状态等结晶性能的影响；通过沉积温度对透射光谱 和光致荧光光谱的影响，探讨了ZnO薄膜的结晶特性与光学性能之间的关系.研究结果显示， 在室温至500℃的范围内，ZnO薄膜的晶粒尺寸随沉积温度的增加而增加，在沉积温度为500 ℃时达到最大；当沉积温度为750℃时，ZnO薄膜的晶粒尺度有所减小；在室温至750℃的范 围内，薄膜中ZnO晶粒与Si基体之间均存在着相对固定的外延关系；在沉积温度低于500℃时 ，制备的ZnO薄膜处于压应变状态，而750℃时沉积的薄膜表现为张应变状态.沉积温度的不 同导致ZnO薄膜的折射率、消光系数、光学禁带宽度以及光致荧光特性的变化，沉积温度对 紫外光致荧光特性起着决定性的作用.此外，探讨了影响薄膜近紫外光致荧光发射的可能因 素. 关键词： ZnO薄膜 表面形貌 微观结构 光学常数