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1.
We present atomically resolved images of nickel oxide (001) obtained with low temperature non-contact atomic force microscopy. Using iron coated silicon cantilevers, it is possible to distinguish defects with a vertical resolution of less than 10 pm and to obtain atomic resolution across step edges on the upper and lower terrace within 1 nm of the edge. The noise level in these images could be reduced to ƹ.5 pm.  相似文献   

2.
Combined high-resolution electron microscopy, computer modeling, and image simulations are used to study the structure of the =5 (210) [001] tilt boundary in the ordered compound AuCu3. On the experimental side, we have prepared thin samples cut in a bulk bicrystal containing an interface close to the above (tilt 37°). The high-resolution images obtained at 400 kV along the [001] tilt axis show that among possible configurations, the boundary adopted predominantly a symmetrical one. Theoretically, using the standard geometrical approach, we derived possible atomic configurations of the boundary and we identified some of the defects allowing for the coexistence between these variants. Finally, we performed energy minimizations using these geometrical models and an n-body potential adapted to this compound. In agreement with the experiment, one of the two possible symmetrical variants is associated to the lowest excess energy. Moreover, the computations show that large variations affect the spacing of (210) atomic planes near the boundary.  相似文献   

3.
Atom-resolved images of a TiO2(110)-(1×1) surface and individual formate and acetate ions adsorbed on the surface were obtained by noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum. In contrast to previous scanning tunneling microscopic studies imaging five-fold coordinated Ti atoms, outermost atoms of bridge-bound oxygen ridges of the surface were resolved as protruding rows by NC-AFM. High-resolution image of the surface revealed that the bridging oxygen atoms on terraces ordered in a (1×1) periodicity. Randomly distributed point and multiple defects of oxygen atoms were also imaged as dark spots. The (2×1) overlayer of formate and acetate ions were resolved as ordered bright spots. Dispersed formate ions at a low coverage were also observed as bright spots between the bridging oxygen ridges along the [001] direction.  相似文献   

4.
具有原子分辨率的x射线荧光全息术的数值模拟研究   总被引:2,自引:0,他引:2       下载免费PDF全文
谢红兰  高鸿奕  陈建文   《物理学报》2003,52(9):2223-2228
根据x射线荧光全息术的成像原理,对体心立方晶系的Fe单晶进行了数值模拟(包括荧光全 息图及其重构像),在各个晶面(001,010,100)上得到Fe原子的像,与Fe的晶格模型的 原子位置一致,表明运用这种x射线荧光全息术,能够在原子水平上得到单晶或准晶体的内 部结构图像. 关键词: x射线荧光全息术 同步辐射 晶体结构 傅里叶变换  相似文献   

5.
We present an extensive set of ab initio calculations for a type- C defect on Si(001). Various models belonging to subsurface defects are studied. A substitutional B in the second surface layer is predicted as a possible atomic origin of this defect. However, H and O coupled with second-layer vacancies and a substitutional C are not responsible for a type- C defect. We also discuss how the electronic structure of a type- C defect contributes to its specific scanning tunneling microscopy images.  相似文献   

6.
We have identified a new defect at the intersection between grain boundaries and surfaces in Au using atomic resolution transmission electron microscopy. At the junction line of 90 degrees <110> tilt grain boundaries of (110)-(001) orientation with the free surface, a small segment of the grain boundary, about 1 nm in length, dissociates into a triangular region with a chevronlike stacking disorder and a distorted hcp structure. The structure and stability of these defects are confirmed by atomistic simulations, and we point out the relationship with the one-dimensional incommensurate structure of the grain boundary.  相似文献   

7.
Abstract

IR spectra of a natural CaTiO3 perovskite single-crystal show two absorption bands at 3394 and 3326 cm?1 which are attributed to structural OH defects. The two bands are weakly pleochroic in a (001) section, but show a more distinct anisotropic behaviour in (110) with a stronger component of absorption perpendicular to [001]. A plausible model for the mode of OH incorporation on a preferred atomic position is derivable under the assumption of vacancies in the Ca-lattice. An OH dipole direction roughly pointing along [110] with O2 oxygens acting as donor oxygens is consistent with the measured pleochroic scheme of the bands.  相似文献   

8.
The analysis of changes in the vibrational spectrum of infrared active molecules adsorbed on a ionic surface containing point or extended defects can be an efficient method to determine the nature and density of surface defects. We study the infrared response of ammonia molecules deposited on a ionic surface of MgO containing charge vacancies and dipolar defects in various concentrations and distributions and show significant changes assigned to the defects signature. A Monte Carlo approach is used to randomly deposit the probe molecules on the surface displaying random or regularly arranged defects at low temperature.  相似文献   

9.
刘汝霖  方粮  郝跃  池雅庆 《物理学报》2018,67(17):176101-176101
基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.  相似文献   

10.
元素硫在镍基合金表面吸附产生严重的电化学腐蚀,为从原子尺度研究硫腐蚀机理,采用第一性原理方法,构建并优化了镍基合金825的晶胞结构模型,计算分析了S原子在镍基合金825耐蚀性较差面(001)晶面的吸附及电子转移情况.结果表明:Ni原子占据顶角, Cr原子和Fe原子对称占据面心是镍基合金825稳定的晶胞结构;原子S在镍基合金825(001)面上最稳定的吸附位为四重穴位,吸附能为-6.51 eV; S吸附前后的态密度(DOS)和二维电荷差分密度图(DCD)对比发现,镍基合金825中Fe与S之间电荷偏移明显,形成离子键,易生成腐蚀产物Fe_xS_y. S的吸附对镍基合金825中Cr原子的电子分布影响不大,且合金中Cr和Ni抑制了合金中Fe与S之间的相互作用,从而提高了合金耐蚀性.  相似文献   

11.
In this work the results of the statistical topometric analysis of fracture surfaces of soda-lime-silica glass with and without ionic exchange treatment are reported. In this case, the mechanism of substitution is K+-Na+. atomic force microscopy (AFM) was employed to record the topometric data from the fracture surface. The roughness exponent (ζ) and the correlation length (ξ) were calculated by the variable bandwidth method. The analysis for both glasses (subjected and non-subjected to ionic exchange) for ζ shows a value ∼0.8, this value agrees well with that reported in the literature for rapid crack propagation in a variety of materials. The correlation length shows different values for each condition. These results, along with those of microhardness indentations suggest that the self-affine correlation length is influenced by the complex interactions of the stress field of microcracks with that resulting from the collective behavior of the point defects introduced by the strengthening mechanism of ionic exchange.  相似文献   

12.
We propose and apply to the KBr(001) surface a new procedure for species recognition in scanning force microscopy (SFM) of ionic crystal surfaces which show a high symmetry of the charge arrangement. The method is based on a comparison between atomistic simulations and site-specific frequency versus distance measurements. First, by taking the difference of force-distance curves extracted at a few judiciously chosen surface sites we eliminate site-independent long-range forces. The obtained short-range force differences are then compared with calculated ones assuming plausible tip apex models. This procedure allows for the first time identification of the tip apex polarity and of the positive and negative sublattices in SFM images of the (001) cleavage surface of an ionic crystal with the rock salt structure.  相似文献   

13.
Scanning tunnelling microscopy has been used to identify a number of surface reconstructions on the (001) surface of the cubic metallic sodium tungsten bronze, Na0.667WO3. Which is dominant has been found to depend critically on sample preparation. As well as a reconstruction that bears a striking similarity to that of the parent material, tungsten trioxide, regions of (2×1) periodicity are observed that can only be explained in terms of an NayO surface layer. In the current work, we relate the effect of sample preparation on the surface electronic structure of Na0.667WO3(001) with that on the atomic structure by comparing photoemission spectra with STM images. Particular interest is focused on band gap defect states in photoemission spectra which, in contrast to similar states in spectra from WO3, do not appear to correlate with the appearance of localised defects or highly reduced terraces in STM images. The existence of peroxide-like oxygen dimers at the (2×2) reconstructed surface, on the other hand, is characterised by the appearance of identifiable states in the valence band spectrum.  相似文献   

14.
The surface of 1T-TiS2 was examined by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The STM and AFM images of this compound were interpreted on the basis of the partial electron density ρ(r,EF) and total electron density ρ(r) of a slab which consists of six (001) 1T-TiS2 layers. Electronic structure calculations were performed using the ab-initio Hartree–Fock program crystal. It was found that the bright spots in experimental STM images correspond to sulfur atoms at both positive and negative bias voltages. The AFM image showed a periodicity which can be explained by the atomic corrugation at the surface. Structural defects on the surface were also investigated, and their interpretation constitutes experimental proof that only sulfur atoms were detected by scanning probe microscopies.  相似文献   

15.
Point defects on a Si(001)-(2 x 1) surface were examined by scanning tunneling microscopy and ab initio pseudopotential calculations. The residual water molecules in the ultrahigh vacuum chamber are found to be the sole origin of the type-C defects. Most of the apparent dimer vacancies in the filled-state images were found to show a distinct U-shaped triple-dimer footprint in the empty-state images, which also originate from water adsorption. These two defects were identified as a single dissociated water molecule forming Si-OH and Si-H bonds in the interdimer (type-C defect) and the on-dimer (dimer-vacancy-like or U-shape defect) configurations.  相似文献   

16.
New galvanomagnetic and thermoelectric results for electron-irradiated n-type α-Sn show that acceptor resonance states in the conduction band play a crucial role. It is found that these states are near the band edge and are associated with electrically active point defects resulting from atomic displacements.  相似文献   

17.
We show that in ionic crystals under the action of a temperature gradient and an external magnetic field on the cloud of point defects surrounding a charged dislocation, a phenomenon arises which is analogous to the Nernst-Ettingshausen effect.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 80–83, January, 1996.  相似文献   

18.
Line defects of a thin alumina film on NiAl(110) have been studied on the atomic level with scanning tunneling microscopy at 4 K. While boundaries between two reflection domains do not expose a characteristic structure, antiphase domain boundaries are well ordered. The latter boundaries result from the insertion of a row of O atoms, as atomically resolved images of the topmost oxygen layer show. The insertion occurs only in two of the three characteristic directions of the quasihexagonal O lattice. Depending on the direction, either straight or zigzagged boundaries form. An atomic characterization of line defects on the oxide surface is a first step to correlate their topographic structure and chemical activity.  相似文献   

19.
何存富  张改梅  吴斌 《中国物理 B》2010,19(8):84302-084302
<正>In this paper the elastic properties of SiO_x film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy(AFAM) in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements.The SiO_x films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition(PECVD).The local contact stiffness of the tip-SiO_x film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy.Using the reference approach,indentation modulus of SiO_x film for fixed point is obtained.The images of cantilever amplitude are also visualized and analysed when the SiO_x surface is excited at a fixed frequency.The results show that the acoustic amplitude images can reflect the elastic properties of the sample.  相似文献   

20.
We have investigated the recently reported structural phase transition at low temperature (LT) for alpha-Pb/Ge(111) [from a (3 x 3) symmetry to a disordered phase] using scanning tunneling microscopy (STM). By tracking exactly the same surface regions with atomic resolution while varying the sample temperature from 40 to 140 K, we have observed that substitutional point defects are not mobile, in clear contrast to previous assumptions. Moreover, STM data measured at the lowest temperatures ever reported for this system (10 K) show that while filled-state images display the apparent signature of a glassy phase with no long-range order, in empty-state images honeycomb patterns with (3 x 3) periodicity, and not distinguishable from data measured at much higher temperatures, are clearly resolved. These new observations cast serious doubts on the nature and/or on the existence of a disordered phase at LT.  相似文献   

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