Observation of spin-polarized surface states on ultrathin bct Mn(001) films by spin-polarized scanning tunneling spectroscopy

We report the observation of a magnetic contrast of up to 20% in the scanning tunneling spectroscopy dI/dV maps obtained with Fe-coated tips on Mn(001) layers grown on an Fe(001) whisker at 370 K. These nanometer resolution microscopy results show that the layers couple antiferromagnetically. By normalizing the dI/dV curves by tunneling probability functions, we found a spin-dependent peak on the body-centered-tetragonal (bct) Mn(001) surface at +0.8 V, whose high spin polarization gives rise to the dI/dV map contrast. Band structure calculations allow one to identify the +0.8 V peak as due to two spin-polarized d(z(2)) surface states.     

扫描隧道显微术中的微分谱学及其应用

文章介绍了扫描隧道显微术中微分谱学的原理及其在实验中的诸多应用。微分谱（dI／dV谱）和dI／dV成像可用来研究电子局域态密度在能量和空间的分布，即微分谱固定空间一点，反映电子态密度以能量为变量的分布；而dI／dV图像则反映某给定能量的电子局域态密度以空间为变量的分布，二次微分谱（d^2I／dV^2谱）和二次微分成像可以用来反映分子的非弹性隧穿过程，从而研究分子的振动态。     

Surface scattering via bulk continuum states in the 3D topological insulator Bi2Se3

We have performed scanning tunneling microscopy and differential tunneling conductance (dI/dV) mapping for the surface of the three-dimensional topological insulator Bi(2)Se(3). The fast Fourier transformation applied to the dI/dV image shows an electron interference pattern near Dirac node despite the general belief that the backscattering is well suppressed in the bulk energy gap region. The comparison of the present experimental result with theoretical surface and bulk band structures shows that the electron interference occurs through the scattering between the surface states near the Dirac node and the bulk continuum states.     

Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode

Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation [Zhong-Yi Lu et al, Phys. Rev. Lett. 94, 207210 (2005)]. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.     

Evidence of hole-electron quasiparticle interference in ErSi2 semimetal by Fourier-transform scanning tunneling spectroscopy

The semimetallic ErSi2 layer grown on Si(111) substrates provides an ideally confined 2D electron and hole gas that reflects in complex standing wave pattern at 77 K. The quasiparticles exist in a wide energy range from -800 to 300 meV without mixing with silicon bulk excitations. By comparing high resolution Fourier transform of dI/dV maps, with joint density of states calculations, we are able to determine the 2D band structure. We also clearly demonstrate that hole-hole and hole-electron quantum interferences dominate over electron-electron ones.     

铜箔上生长的六角氮化硼薄膜的扫描隧道显微镜研究

利用扫描隧道显微镜研究了采用化学气相沉积法在铜箔表面生长出的高质量的六角氮化硼薄膜. 大范围的扫描隧道显微镜图像显示出该薄膜具有原子级平整的表面, 而扫描隧道谱则显示, 扫描隧道显微镜图像反映出的是该薄膜样品的隧穿势垒空间分布. 极低偏压的扫描隧道显微镜图像呈现了氮化硼薄膜表面的六角蜂窝周期性原子排列, 而高偏压的扫描隧道显微镜图像则呈现出无序和有序排列区域共存的电子调制图案. 该调制图案并非源于氮化硼薄膜和铜箔衬底的面内晶格失配, 而极有可能来源于两者界面处的氢、硼和/或氮原子在铜箔表面的吸附所导致的隧穿势垒的局域空间分布.     

Interference and Interaction in multi-wall carbon nanotubes

We report equilibrium electric resistance R and tunneling spectroscopy (dI/dV)measurements obtained on single multi-wall nanotubes contacted by four metallic Au fingers from above. At low temperature quantum interference phenomena dominate the magnetoresistance. The phase-coherence (l_φ)and elastic-scattering lengths (l_e)are deduced. Because l_e is of order of the circumference of the nanotubes, transport is quasi-ballistic. This result is supported by a dI/dV spectrum which is in good agreement with the density of states (DOS) due to the one-dimensional subbands expected for a perfect single-wall tube. As a function of temperature T the resistance increases on decreasing T and saturates at ≈1–10 Kfor all measured nanotubes. R(T) cannot be related to the energy-dependent DOS of graphene but is mainly caused by interaction and interference effects. On a relatively small voltage scale of the order ≈10 meV, a pseudogap is observed in dI/dV which agrees with Luttinger-liquid theories for nanotubes. Because we have used quantum diffusion based on Fermi-liquid as well as Luttinger-liquid theory in trying to understand our results, a large fraction of this paper is devoted to a careful discussion of all our results. Received: 17 May 1999 / Accepted: 18 May 1999 / Published online: 4 August 1999     

Electronic density oscillations in gold atomic chains assembled atom by atom

Linear Au chains two to 20 atoms long were constructed on a NiAl(110) surface via the manipulation of single atoms with a scanning tunneling microscope. Differential conductance (dI/dV) images of these chains reveal one-dimensional electronic density oscillations at energies 1.0 to 2.5 eV above the Fermi energy. The origin of this delocalized electronic structure is traced to the existence of an electronic resonance measured on single, isolated Au atoms. Variations in the wavelength in dI/dV images of an eleven-atom chain taken at different energies revealed an effective electronic mass of 0.4+/-0.1 times the mass of a free-electron.     

Mapping the first electronic resonances of a Cu phthalocyanine STM tunnel junction

Using a low temperature, ultrahigh vacuum scanning tunneling microscope (STM), dI/dV differential conductance maps were recorded at the tunneling resonance energies for a single Cu phthalocyanine molecule adsorbed on an Au(111) surface. We demonstrated that, contrary to the common assumption, such maps are not representative of the molecular orbital spatial expansion, but rather result from their complex superposition captured by the STM tip apex with a superposition weight which generally does not correspond to the native weight used in the standard Slater determinant basis set. Changes in the molecule conformation on the Au(111) surface further obscure the identification between dI/dV conductance maps and the native molecular orbital electronic probability distribution in space.     

Multiple Andreev-reflection in asymmetric superconducting weak-links

The present paper is a continuation of [1], where we demonstrated the occurrence of multiple Andreev-reflection (AR) in symmetric Pb/n-InSb/Pb sandwich junctions. Here we are presenting the results of our investigations for the asymmetric configuration Pb/n-InSb/Sn. We discuss the measuredI(V)- anddV/dI(V)-characteristics in comparison with numerical calculations, which we carried out in a theoretical extension of the OTBK-theory [2,3] and a formulation given by W.M. van Huffelen et al. [4]. The main features in the characteristics are thesubharmonic gap structure (SGS) and anexcess current, which show interesting deviations from the symmetric situation. These deviations can be understood in a simple physical picture.     

Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system

A study is reported of the effect of (001)GaAs substrate misorientation in the [010] direction on the distribution of MBE-grown self-assembled InAs/GaAs quantum dots in size and position in the GaAs matrix. Temperature-induced narrowing of the exciton photoluminescence line of a quantum-dot ensemble caused by redistribution of photoexcited carriers among dots of different size has been observed. Fiz. Tverd. Tela (St. Petersburg) 40, 855–857 (May 1998)     

Superconducting phase transitions in quantum dots

In NdN and SdS nanostructures, anomalous ground states with a non-integer average number of electrons in the quantum dots d occur. These states correspond to pair or single-electron superconductivity and are separated from states with a definite (integer) number of electrons by, as a rule, second-order phase transitions. The characteristic features of the pair and single-electron superconducting Josephson current in SdS are discussed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 9, 618–623 (10 November 1996)     

The absorption of sulfur dioxide in the terahertz range at temperatures of 300–1200 K

The rotational spectrum of the absorption of the main isotope of sulfur dioxide (³²S¹⁶O₂), which corresponds to the terahertz range of electromagnetic waves, namely 1–250 cm^?1 (0.1–10 THz), is studied. The consideration covers rotational transitions within all vibrational states whose Hamiltonian parameters are known from the literature: (000-000), (010-010), (100-100), (001-001), (020-020), (110-110), (011-011), (030-030), (120-120), (200-200), (002-002), (130-130), (103-103), (301-301), (101-101), (021-021), (210-210), (111-111), (201-201), (003-003), and (131-131). As a result, the absorption coefficient of ³²S¹⁶O₂ is calculated for a broad temperature range (300–1200 K) and the contribution of the rotational band of each vibrational state to the total absorption coefficient is evaluated.     

Density of states of amorphous GdxSi1-x at the metal-insulator transition

We have determined the electronic density of states of amorphous Gd xSi (1-x), N(GdSi)(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a Gd xSi (1-x)/oxide/Pb tunnel junction at low T (T approximately 100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region N(GdSi)(0) scales approximately with sigma(2).     

Peierls–Nabarro model for dislocations in MgSiO3 post-perovskite calculated at 120 GPa from first principles

We present here the first numerical modelling of dislocations in MgSiO₃ post-perovskite at 120?GPa. The dislocation core structures and properties are calculated through the Peierls–Nabarro model using the generalized stacking fault (GSF) results as a starting model. The GSFs are determined from first-principle calculations using the VASP code. Dislocation properties such as planar core spreading and Peierls stresses are determined for the following slip systems: [100](010), [100](001), [100](011), [001](010), [001](110), [001](100), [010](100), [010](001), ½[110](001) and ½[110](110). Our results confirm that the MgSiO₃ post-perovskite is a very anisotropic phase with a plasticity dominated by dislocation glide in the (010) plane.     

Even-odd effect in Andreev transport through a carbon nanotube quantum dot

We have measured the current (I)-voltage (V) characteristics of a single-wall carbon nanotube quantum dot coupled to superconducting source and drain contacts in the intermediate coupling regime. Whereas the enhanced differential conductance dI/dV due to the Kondo resonance is observed in the normal state, this feature around zero-bias voltage is absent in the superconducting state. Nonetheless, a pronounced even-odd effect appears at finite bias in the dI/dV subgap structure caused by Andreev reflection. The first-order Andreev peak appearing around V=Delta/e is markedly enhanced in gate-voltage regions, in which the charge state of the quantum dot is odd. This enhancement is explained by a "hidden" Kondo resonance, pinned to one contact only. A comparison with a single-impurity Anderson model, which is solved numerically in a slave-boson mean-field approach, yields good agreement with the experiment.     

Spatial fluctuations of the density of states in magnetic fields observed with scanning tunneling spectroscopy

Scanning tunneling spectroscopy images on n-InAs(110) exhibit a strong magnetic field dependent contrast on the 50 nm length scale, indicating fluctuations in the density of states of the sample. The contrast is correlated to previously observed Landau oscillations in dI/dV curves. Its origin is a spatial fluctuation of the Landau level energy of 3-4 meV caused by the inhomogeneous distribution of dopant atoms. Besides inducing large-scale fluctuations in the density of states, dopants preserve their ability to scatter electron waves. The resulting wave pattern is found to depend on the magnetic field. It is suggested that the dependence is guided by the condensation of the electronic states on Landau tubes.     

Imaging of Friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111) A surfaces

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111) A substrate were characterized using low-temperature scanning tunneling microscopy. Using dI/dV signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.     

基于HfO2的阻变存储器中Ag导电细丝方向和浓度的第一性原理研究

采用基于密度泛函理论的第一性原理方法, 研究了基于HfO₂的阻变存储器中Ag 导电细丝浓度以及方向性. 通过计算Ag杂质5种方向模型的分波电荷态密度等势面图、形成能、 迁移势垒和分波电荷态密度最高等势面值, 发现[-111]方向最有利于Ag导电细丝的形成, 这对器件的开启电压、形成电压和开关比有很大影响. 本文基于最佳的[-111]导电细丝方向, 设计了4 种Ag 浓度结构. 计算4种Ag浓度结构的分波电荷态密度等势面图, 得出Ag浓度低于4.00 at.% 时晶胞结构中无导电细丝形成且无阻变现象. 当Ag浓度从4.00 at.%增加到4.95 at.% 时, 晶胞结构中发现有导电细丝形成, 表明Ag浓度高于4.00 at.%时, 晶胞中可以发生阻变现象. 然而, 通过进一步对比计算这两种晶胞结构中Ag的形成能、分波电荷态密度最高等势面值、总态密度与Ag的投影态密度发现, Ag浓度越大, 导电细丝却不稳定, 并且不利于提高阻变存储器的开关比. 本文的研究结果可为改善基于HfO₂的阻变存储器的性能提供一定理论指导.     

Molecular states observed in a single pair of strongly coupled self-assembled InAs quantum dots

Molecular states in a single pair of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single-electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We observe a series of well-formed Coulomb diamonds with charging energy of less than 5 meV, which are much smaller than those reported previously. This is because electrons are occupied in molecular states, which are spread over both dots and occupy a large volume. In the measurement of ground and excited state single-electron transport spectra with a magnetic field, we find that the electrons are sequentially trapped in symmetric and anti-symmetric states. This result is well explained by numerical calculation using an exact diagonalization method.