一种大功率低偏振度量子阱超辐射发光二极管

设计了一种张应变与压应变相结合的混合应变量子阱结构超辐射发光二极管,研究了TE模和TM模在器件中的模式增益,分析了影响增益偏振性的因素,在此基础上通过改变有源层量子阱的应变类型、应变量以及层数来达到高增益和偏振不敏感性。最后按设计工艺流程生长了芯片,实验结果表明,所设计的SLD芯片单管输出功率在100mA驱动电流下可达3.5mW,出射光谱FWHM约为40nm,20nm波长范围内偏振度为0.3dB,具有较理想的大功率、宽光谱、低偏振度特性。     

超辐射发光二极管的研究进展

超辐射发光二极管(SLD)是一种宽光谱光源,广泛用于光纤陀螺、光学相干断层扫描等领域。高性能SLD要求同时实现大功率和宽光谱输出,航天领域相关应用还要求其具有较高的抗辐射性能。本文从如何实现大功率、宽光谱输出和抗辐射加固等几方面介绍了SLD的研究进展,并对其未来的研究方向进行了展望。     

1 550 nm宽光谱超辐射发光二极管的研制

超辐射发光二极管因其宽光谱低抖动的光谱特点以及输出光为非相干光的特性,在光学相干层析成像技术、光处理技术等领域具有重要应用。为获得宽光谱低抖动的超辐射输出光,设计并制备了一种1 550 nm AlGaInAs多量子阱超辐射发光二极管。采取倾斜12波导并增加隔离区,结合抗反射薄膜,最终实现宽光谱输出的超辐射发光二极管,并比较了有无隔离区对器件性能的影响。实验结果表明,制得的超辐射发光二极管3 dB光谱宽度可拓宽至83 nm,光谱纹波小于0.1 dB,在200 mA工作电流下,出光功率大于1.5 mW。     

1310nm大功率高偏振度量子阱超辐射发光二极管

设计并制备了一种斜条脊波导结构压应变高偏振度多量子阱超辐射发光二极管.设计的脊波导出光面TiO2/SiO2四层宽带增透膜的TE模式反射率约为10-6,分析了脊波导角度偏差和膜层厚度偏差对增透膜反射率的影响.实验结果表明,在250 mA直流电流驱动下,所设计的超辐射发光二极管芯片单管输出功率可达22.7 mW,出射光谱FWHM约为37.3 nm,光谱纹波系数低于0.15 dB,TE模式输出光强占主导,偏振度约为19.2 dB.     

超辐射发光二极管偏振度对光纤陀螺性能的影响

如何降低光纤陀螺偏振噪声,提高其零偏稳定性在陀螺性能评估和系统结构调整中有着重要的意义.以分析超辐射发光二极管(SLD)偏振度对光纤陀螺性能影响为研究目的,从矩阵光学的琼斯矩阵理论出发,分析Lyot型消偏器的结构参数对光源SLD消偏的影响,完成了对Lyot消偏器结构参数的建模工作,同时提出其最佳结构参数的存在,并进行了计算机仿真和试验验证.首次在Lyot型消偏器的结构参数与光纤陀螺性能之问建立联系,用实验方法验证了之前所给出的结论.研究结果表明:利用光纤消偏器减小光源出射光的偏振度有助于降低光纤陀螺偏振噪声,提高其零偏稳定性.     

1.3μm超辐射发光二极管

本文报告了电子束蒸镀 Si_3N_4减反射膜的结果,并制成了1.3μm 超辐射发光二极管。室温连续输出功率1.2mW,光谱半功率宽度9nm。     

超辐射发光二极管(SLD)

概述了实现超辐射发光二极管的主要手段以及制备的器件性能和特点,并讨论了其发展趋势。     

超辐射发光二极管组件

超辐射发光二极管(SLED)作为一种非相干性宽带光源,是光纤陀螺仪(FOG)和光纤传感器的理想光源,也是光时域反射仪(OTDR)和中短距离光通信的主要光源之一。SLED组件采用8脚蝶形式或14脚双列直插式管壳全金属化气密性封装,标准单模光纤(SMF)或保偏光纤(PMF)耦合输出。组件包括SLED管芯、半导体致冷器(TEC)、热敏电阻,可带背光探测器。使用时可通过外电路(自动温度控制电路ATC、自动功率控制电路APC)对组件实现功率控制和温度控制,以便使组件能长期稳定工作。与光纤耦合效率可达45％以上,光谱宽度大于40nm(工作电流100mA)。     

1.3 μm InGaAsP低电流超辐射发光二极管组件

设计并制作了用于高精度光纤陀螺的 1.3μm低电流超辐射发光二极管组件。采用隐埋异质结结构 ,实现了良好的电流限制和光限制 ,同时采用长腔结构来提高器件单程增益 ,从而获得了高的输出功率。组件具有工作电流小、输出功率高 ,以及光谱特性好等特点。测试结果表明 ,在 70mA工作电流下 ,组件尾纤输出功率大于 0 .1mW ,光谱宽度大于 30nm。     

1.3μm InGaAsP低电流超辐射发光二极管组件

设计并制作了用于高精度光纤陀螺的1.3μm低电流超辐射发光二极管组件.采用隐埋异质结结构,实现了良好的电流限制和光限制,同时采用长腔结构来提高器件单程增益,从而获得了高的输出功率.组件具有工作电流小、输出功率高,以及光谱特性好等特点.测试结果表明,在70mA工作电流下,组件尾纤输出功率大于0.1mW,光谱宽度大于30nm.     

High-power superluminescent diodes

By inclining the active stripe of a planar AlGaAs double heterojunction structure by 5° with respect to the facets, reflection feedback has been eliminated and high-power superluminescent diodes emitting 28 mW with less than 5% spectral modulation have been obtained     

High-performance quantum-dot superluminescent diodes

By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6/spl deg/ with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.     

High power broadband superluminescent diodes with chirped multiple quantum dots

A superluminescent diode (SLD) using J-shaped ridge waveguide and chirped multiple InAs quantum dots (QDs) with three different energy bandgap wavelengths, which are controlled by QD size, is demonstrated. The fabricated QD SLDs exhibit high continuous wave output power of 32 mW and wide spectral bandwidth up to 98 nm, covering the range 1084-1182 nm.     

Bonding stress measurements from the degree of polarization offacet emission of AlGaAs superluminescent diodes

Mechanical stress induced by bonding AlGaAs superluminescent diodes to Cu, SiC, or diamond heat sinks using 40% Pb-60% Sn or 80% Au-20% Sn solder has been observed using measurements of the degree of polarization of the facet emission at low current levels. Stresses up to 10⁹ dyn/cm² were observed, with the magnitude of the stress dependent on the solder used, and the sign of the stress dependent on the difference in thermal expansion coefficient between the diode and the heat sink. Relaxation of the bonding stress over time was investigated as a function of temperature for each solder. The implications of the relaxation for the interpretation of high-temperature life tests, of superluminescent and laser diodes are discussed     

Quantum noise in superluminescent diodes

Intensity noise in a superluminescent diode (SLD) has been studied over the frequency range from 100 Hz to 2 MHz. The"1/f"noise which dominates at low frequencies (< 50 kHz) is superceded by a flat "white noise" spectrum at higher frequencies (> 500 kHz). A more extensive investigation has been carried out in this higher frequency regime, where the intensity noise is assumed to result from quantum fluctuation effects. For a given SLD driving current, the excess noise power is found to be a linear function of photodetector current to the maximum observed level of 12 dB. These results agree well with the behavior predicted by a quantum amplifier model for the SLD.     

Active multi-mode-interferometer broadband superluminescent diodes

We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi-mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode-interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μ m in theory, which is high enough for most tissue imaging.     

超辐射发光二极管数值仿真模型

采用谱分割方法和分段模型对1.5 μm 波段的超辐射发光二极管(SLD)进行了仿真.为减小分段模型的分段数目和计算时间,对文献中常采用的计算每小段平均光功率(平均光子数密度)的3种主要方法进行了对比分析,结果表明:积分平均的方法具有显著的优势.与商用器件的测试结果相比,数值计算的输出光谱和电流-输出功率曲线基本相符.对高功率SLD的数值仿真表明:在有源区长度大于1mm后,输出功率的增长出现明显的饱和现象,纵向空间烧孔(LSHB)效应限制了增加有源区长度对输出功率增长的贡献.此外,对高功率SLD,使用忽略LSHB效应的单段模型计算输出功率可产生数倍的误差,因此,采用分段模型计入LSHB效应是必要的.     

Modulation characteristics of double-heterostructure superluminescent diodes

High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.     

High-efficiency superluminescent diodes for optical-fibre transmission

A remarkable improvement of external efficiency is achieved in double-heterojunction GaAs-GaAlAs superluminescent diodes (d.h. s.l.d.s) by application of antireflective coatings on the front face. The external differential quantum efficiency of 750?1500 ?m long s.l.d.s increased from 1.2% to 4.5% (n.a.=0.7) after coating the front face with a quarter-wavelength silicon-monoxide film.     

High-power 0.82 mu m superluminescent diodes with extremely low Fabry-Perot modulation depth

Superluminescent AlGaAs-GaAs diodes with 15 mW output power and 1% Fabry-Perot modulation depth and modules with 3 mW polarisation maintaining fibre output have been developed. At output powers of more than 8 mW the effect of saturation on power fluctuations was observed.<>