Topological Fulde–Ferrell and Larkin–Ovchinnikov states in spin-orbit-coupled lattice system

The spin-orbit coupled lattice system under Zeeman fields provides an ideal platform to realize exotic pairing states. Notable examples range from the topological superfluid/superconducting (tSC) state, which is gapped in the bulk but metallic at the edge, to the Fulde–Ferrell (FF) state (having a phase-modulated order parameter with a uniform amplitude) and the Larkin–Ovchinnikov (LO) state (having a spatially varying order parameter amplitude). Here, we show that the topological FF state with Chern number (C=−1) (tFF₁) and topological LO state with C= 2 (tLO₂) can be stabilized in Rashba spin-orbit coupled lattice systems in the presence of both in-plane and out-of-plane Zeeman fields. Besides the inhomogeneous tSC states, in the presence of a weak in-plane Zeeman field, two topological BCS phases may emerge with C=−1 (tBCS₁) far from half filling and C= 2 (tBCS₂) near half filling. We show intriguing effects such as different spatial profiles of order parameters for FF and LO states, the topological evolution among inhomogeneous tSC states, and different non-trivial Chern numbers for the tFF₁ and tLO_1,2 states, which are peculiar to the lattice system. Global phase diagrams for various topological phases are presented for both half-filling and doped cases. The edge states as well as local density of states spectra are calculated for tSC states in a 2D strip.     

基于新的整数型分子图论指数M系统探索烷烃核磁共振碳谱(13C NMR)化学位移和CSS规律

系统研究了核磁共振碳谱与化学位移和规律,以及拓扑图论方法在定量结构波谱关系(QSSR)中的应用.本文基于路径长度矢量p=p1,p2,p3,…,pm)组合研究提出了一种新的整数型拓扑图论指数M=(p1+p2)+(p1-p3),并发现它与烷烃¹³C NMR化学位移和有良好线性相关性:回归方程及其统计参数为CSS=+14.329^* M-21.089;n=65,R=0.991,SD=7.684,F=3648.021,U=215381.656,Q=3719.563;交互校验CV结果为:R=0.990,R²(01)=0.981,SD(01)=8.086,F(01)=3288.113,U(01)=214982.172,Q(01)=4119.042.     

An investigation of metal/GaAs(100) interfaces by deep level transient spectroscopy

In this work we investigate the ability of DLTS to detect the presence of interface states at metal/GaAs(100) (n-type) interfaces where the semiconductor surface has been prepared by two different procedures. A correlation is observed between the magnitude of the ideality parameter determined from the current-voltage (I-V) characteristic of the diode and presence in the DLTS spectrum of a feature attributable to interface states. Schottky diodes have been fabricated with both gold and iron contacts which exhibit near ideal behaviour (n<1.1). No interface states were detected by DLTS on either of these diodes. However, diodes fabricated on oxidised GaAs surfaces, with higher idealities (1.5 <n < 2), exhibit additional electron trap levels in the DLTS spectrum. For the case of iron, a deep level of activation energy 0.55 eV is observed in the conventional reverse bias pulse sequence mode of DLTS operation. In addition, for both gold and iron diodes, a spectral feature which can be attributed to a broad distribution of interface states within the deplation region is observed during a forward bias pulse sequence.     

Spectroscopic properties of Ba 6pjnk autoionizing Stark series

With a combination of the isolated core excitation (ICE) technique and a proper polarization configuration of three lasers, both the 6p_1/2nk and 6p_3/2nk autoionizing Stark states excited from the 6snk Stark states with have been measured for the first time. The experimental results are analyzed by fitting them to the Lorentzian profiles, from which the positions and widths are determined at various electric-field strengths. The experimental results indicate that the 6p_1/2nk and 6p_3/2nk autoionizing Stark states have different spectroscopic properties due to the difference of their cores.     

Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.     

聚变堆燃烧等离子体温度剖面数值分析

采用聚变等离子体中α粒子慢化、扩散的多能群计算方法,结合本底等离子体的能量平衡方程,对α粒子自加热及扩散情形下对聚变堆而言甚为重要的等离子体温度剖面进行了自洽性的数值分析。对动态及稳态等离子体运行方式的模拟结果表明燃烧等离子体温度剖面比起目前实验得出的剖面更峰状化。这一特性不依α粒子在其慢化过程有无显著的扩散损失而改变,在今后对聚变堆α粒子行为及效应的严格分析中应加以考虑。     

Deformed photon-added entangled squeezed vacuum and one-photon states: Entanglement,polarization, and nonclassical properties

In this paper, after a brief review on the entangled squeezed states, we produce a new class of the continuous-variabletype entangled states, namely, deformed photon-added entangled squeezed states. These states are obtained via the iterated action of the f-deformed creation operator A = f(n)aon the entangled squeezed states. In the continuation, by studying the criteria such as the degree of entanglement, quantum polarization as well as sub-Poissonian photon statistics, the twomode correlation function, one-mode and two-mode squeezing, we investigate the nonclassical behaviors of the introduced states in detail by choosing a particular f-deformation function. It is revealed that the above-mentioned physical properties can be affected and so may be tuned by justifying the excitation number, after choosing a nonlinearity function. Finally, to generate the introduced states, we propose a theoretical scheme using the nonlinear Jaynes–Cummings model.     

初始压入位置对Ni基单晶合金纳米压痕影响研究

针对Ni基单晶合金建立初始压入γ 相的γ /γ' 模型和初始压入γ'相的γ'/γ 模型, 采用分子动力学方法模拟金刚石压头压入两种模型的纳米压痕过程, 计算两种模型[001]晶向硬度. 采用中心对称参数分析两种模型(001)相界面错配位错对纳米压痕过程的影响. 结果显示: 弛豫后, 两种模型(001)相界面错配位错形式不同, 其中γ'/γ 模型(001)相界面错配位错以面角位错形式存在; 压入深度在0.930 nm 之前, 两种模型(001)相界面错配位错变化不大, 压入载荷-压入深度及硬度-压入深度曲线较符合; 压入深度在0.930 nm之后, γ'/γ 模型(001)相界面错配位错长大很多, 导致相同压入深度时γ'/γ 模型比γ /γ'模型压入载荷和硬度计算结果小; 压入深度在2.055 nm之后, γ /γ'模型(001)相界面错配位错对γ 相中位错进入γ'相有阻碍作用, 但仍有部分位错越过(001) 相界面进入γ' 相中, γ'/γ 模型(001)相界面处面角位错对γ' 相中位错进入γ 相有更明显的阻碍作用, 几乎无位错越过(001) 相界面进入γ 相中, 面角位错的强化作用更明显, 所以γ'/γ 模型比γ /γ'模型压入载荷上升速度快.     

InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization

A multipolar plasma passivation scheme controlled by in-situ ellipsometry has been developed to produce a high electrical quality InGaAs/Si₃N₄ interface. We have demonstrated the possibility to remove all native oxides at the InGaAs surface by heating the sample at 240°C, then using the action of a multipolar H₂ plasma at 185°C, without optical degradation of the surface. The passivation by a native nitride layer is then performed using a N₂ plasma, and Si₃N₄ is deposited. The treatment induces a reduction of the density of interface states N_ss(E), and also a change of the nature of these interface states as shown by a reduction in the capture cross section σ_n(E).     

Determination of localized states in porous silicon

We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current–voltage (J–V) and the current–thickness (J–T) characteristics in the space-charge-limited-current (SCLC) regime. The distribution exhibits a minimum density at the Fermi level, which is similar to the U-shape-trap-distribution observed in crystalline Si–SiO₂ interface or in amorphous Si. Theoretical analysis well explains both the J–V and the J–L characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level.     

空间盘绕型声学超材料的亚波长拓扑谷自旋态

声子晶体的Dirac线性色散关系,使其具有奇特的声拓扑特性,在声波控制领域具有良好的应用前景.目前,声子晶体的拓扑边缘态主要基于Bragg散射所产生的能带结构,难以实现低频声波的受拓扑保护单向边缘传输.本文引入空间盘绕结构,设计了具有C_(3v)对称性的空间盘绕型声学超材料,并研究其布里渊区高对称点(K/K'点)的亚波长Dirac锥形线性色散.接着,通过旋转打破空间盘绕型声学超材料的镜像对称性,使其Dirac简并锥裂开而产生亚波长拓扑相变和亚波长拓扑谷自旋态.最后,采用拓扑相位互逆的声学超材料构造拓扑界面,实现声拓扑谷自旋传输.空间盘绕型声学超材料的亚波长Dirac线性色散与亚波长拓扑谷自旋态突破了声子拓扑绝缘体的几何尺寸限制,为声拓扑稳健传输在低频段的应用提供理论基础.     

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage(I–V –T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.     

多孔介质中非等温互溶流体驱替过程的格子Boltzmann研究

利用格子Boltzmann方法,在孔隙尺度上对多孔介质内非等温混溶驱替过程进行数值研究,定量分析温度粘性膨胀系数（β_T）以及路易斯数（Le）对界面不稳定性和驱替效率的影响.结果表明：随着β_T的增大,界面不稳定性增强,驱替效率降低.当β_T>0时,随着Le的增大,界面不稳定性减弱,驱替流体与被驱替流体之间的界面趋于平缓,指尖残余率减小,驱替效率增大.当β_T<0时,Le对于驱替效率的影响相反.     

Time-dependent response of interface states determined by using differential isothermal transient spectroscopy

A method based on the differential analysis of the isothermal transients is proposed to study the dynamical properties of the charging and discharging of interface states, and several possibilities of using this method are shown. The results obtained in SiO₂/Si and Si₃N₄/SiO₂/Si samples are in agreement with the existence of a spatial and energy distribution of interface states within the insulator. From the experimental data, the concentration of traps within the insulator at 35 Å is estimated to be 5×10⁹ cm^-2 eV^-1, with a tunneling cross section 10^-19 cm², at E_c-E ≈ 0.2 eV.     

The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure

A detailed study of the effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure has been presented. The polyaniline film has been formed on a p-type Si substrate by means of an anodization process. The polyaniline/p-Si/Al structure has demonstrated clearly rectifying behavior by the current–voltage (I–V) curves studied at room temperature. The current–voltage curves of the structure have been measured immediately, 15, 30, 60, 90 and 120 days after fabrication of the polyaniline/p-Si/Al structure. It has been seen that the characteristic parameters, such as barrier height (BH), ideality factor and series resistance of polyaniline/p-type Si/Al structure have slowly changed with increasing ageing time. The diode shows non-ideal I–V behavior with an ideality factor greater than unity that can be ascribed to the interfacial layer, the interface states and the series resistance.     

原子轨道强耦合方法研究He2+-H-碰撞的电荷转移过程

应用双中心原子轨道强耦合方法研究He²⁺-H^-碰撞的单次电荷转移过程.计算中,对入射粒子He²⁺,包含n=1~7的所有束缚态,计算的能量本征值与NIST标准数据在百分之几的精度内符合很好;对靶H^-,包括一个束缚态1s和五个连续态ns(n=2~6),束缚态能量与他人理论结果一致.在4~400 keV的入射粒子能量范围,计算单电子俘获过程的总截面及到各个壳层上的态选择截面.发现在较低的入射粒子能量,电子主要俘获到He⁺离子主量子数n=3~5的壳层,高能区俘获到n=2的壳层为主;对同一主量子数n,在低能区俘获到高角动量态(l=n-1,n-2)的电荷转移截面相对较大,在高能区主要俘获到l=1的p壳层.同时还计算入射粒子能量分别为4 keV和400 keV时,电子俘获到激发态辐射退激发产生的电荷转移发射光谱,并发现cascade效应的影响很大.     

Thermal entanglement versus mixture in a spin chain: Generation of maximally entangled mixed states

We study the two-body entanglement and mixture in a three-qubit XXZ spin chain in thermal equilibrium state at temperature T with an external magnetic field B. The effects of the magnetic field, the anisotropy and the temperature on the entanglement and mixture are considered. We show that the ground states in this system are fully characterized and distinguished by both entanglement and mixture. Thermal entanglement versus the mixture of all two-spin states is investigated. All pairwise states provide an upper bound on the entanglement for a fixed mixture, and some part of the boundary reaches the boundary allowed by physics. As a result, maximally entangled mixed states can be generated by controlling magnetic field and temperature. Especially, in the ground state of the whole system, the explicit forms of maximally entangled mixed states are given. The results provide a new way to generate maximally entangled mixed states and control entanglement.     

Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps

The exponent n of the generation of an interface trap(Nit),which contributes to the power-law negative bias temperature instability(NBTI)degradation,and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vgand temperature T.It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vgand T.The time evolution of the exponent n is affected by the stress conditions,which is reflected in the shift of the onset of the diffusion-limited phase.According to the diffusion profiles,the generation of the atomic hydrogen species,which is equal to the buildup of Nit,is strongly correlated with the stress conditions,whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.