Low-temperature, high-performance, solution-processed indium oxide thin-film transistors

Solution-processed In(2)O(3) thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl(3), dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In(2)O(3) thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O(2)/O(3) atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm(2) V(-1) s(-1) and an I(on)/I(off) current ratio of 10(7). In(2)O(3) TFTs annealed under an O(2)/O(3) atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85-22.14 cm(2) V(-1) s(-1) and I(on)/I(off) ratios of 10(5)-10(6). The annealing atmosphere of O(2)/O(3) elevates solution-processed In(2)O(3) TFTs to higher performance at lower processing temperature.     

Lamination method for the study of interfaces in polymeric thin film transistors

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.     

双极性碳纳米管薄膜晶体管构建及电性能研究

本文用聚 (PFO-BT)分离的半导体碳纳米管作为有源层,通过气溶胶喷墨打印技术在刚性基体上构建出底栅结构的碳纳米管薄膜晶体管器件。用钛酸钡复合材料封装后,碳纳米管薄膜晶体管表现出很好的双极性、较高的开关比和零回滞特性,同时阈值电压能够控制在0 V附近。通过两个双极性薄膜晶体管连接而成的反相器表现出零回滞、高电压增益(V_dd=1.5 V时,其增益可达到35)和大噪声容限(V_dd=1 V时,最大噪声容限为0.44 V)。     

Inorganic oxide core, polymer shell nanocomposite as a high K gate dielectric for flexible electronics applications

Organic/inorganic core shell nanoparticles have been synthesized using high K TiO(2) as the core nanoparticle, and polystyrene as the shell. This material is easy to process and forms transparent continuous thin films, which exhibit a dielectric constant enhancement of over 3 times that of bulk polystyrene. This new dielectric material has been incorporated into capacitors and thin film transistors (TFTs). Mobilities approaching 0.2 cm(2)/V.s have been measured for pentacene TFTs incorporating the new TiO(2) polystyrene nanostructured gate dielectric, indicating good surface properties for pentacene film growth. This novel strategy for generating high K flexible gate dielectrics will be of value in improving organic and flexible electronic device performance.     

Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds

We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to approximately 500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X 3Si-R-SiX 3 (R = -C 6H 12- and X = Cl, OAc, NMe 2, OMe, or R = -C 2H 4-O-C 2H 4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X 3Si-R-SiX 3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures ( approximately 110 degrees C) and adhere tenaciously to a variety of FET gate contact materials such as n (+)-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10 (-7) approximately 10 (-8) A cm (-2) at 2.0 MV/cm) and tunable capacitance values (from 5 to approximately 350 nF cm (-2)). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.     

Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors

We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm² V^?1 s^?1, threshold voltage of ?7.4 V, on/off current ratio of 1.07 × 10⁸ and subthreshold slope of 0.78 V/decade.     

X-ray scattering study of thin films of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)

Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT, is a semiconducting polymer that forms thin film transistors (TFTs) with high field effect mobility on silicon dioxide dielectrics that are treated with alkyltrichlorosilanes ( approximately 0.2 to 0.5 cm2/V s) but forms TFTs with poor mobility on bare silicon dioxide (<0.005 cm2/V s). The microstructure of spin-coated thin films of PBTTT on these surfaces was studied using synchrotron X-ray diffraction and atomic force microscopy. PBTTT crystallizes with lamellae of pi-stacked polymer chains on both surfaces. The crystalline domains are well-oriented relative to the substrate in the as-spun state and become highly oriented and more ordered with thermal annealing in the liquid crystalline mesophase. Although the X-ray scattering from PBTTT is nearly identical on both surfaces, atomic force microscopy showed that the domain size of the crystalline regions depends on the substrate surface. These results suggest that electrical transport in PBTTT films is strongly affected by the domain size of the crystalline regions and the disordered regions between them.     

稀散金属化合物InCl3的热化学研究

摘要在298.150 K下, 利用具有恒温环境的溶解反应热量计测定了不同浓度的InCl3摩尔溶解热(ΔsHm), 根据Pitzer理论得到了InCl3的无限稀释摩尔溶解热(ΔsH∞m), 和Pitzer焓参数β(0)LMX及β(1)LMX, 计算了溶质的偏摩尔焓. 讨论了离子和溶剂之间的相互作用. 利用文献中的InCl3的晶格能和氯离子的水化热数据, 得到了InCl3和铟离子的水化热.     

Structural and thermal study of CuInSe2 films

Ternary copper indium Di-selenide (CISe) thin film has been deposited by spin-coating on non-conducting glass slide substrates and a solution prepared by the sol-gel process. At room temperature, correspondingly, CuCl2·2H2O, InCl3·3H2O, and H2SeO3 were employed as precursor source chemicals for Cu, In, and Se ions. The dark brown films adhered effectively to the glass substrates. Energy dispersive X-ray analysis is utilized to assess the thin film's chemical composition, which revealed that the film was close to the stoichiometric ratio and proved the proper elemental composition. The thin film's tetragonal unit cell structure was validated by XRD analysis, and all of the derived lattice parameters (a = 5.8512 A and c = 11.7268 A) are excellent consistent with the previous results. Scherrer's formula yields a crystallite size of 5.94 nm. SEM microtopography of the film surface revealed that the film is homogeneous on the substrate surface, and AFM revealed that the film has a spike-like morphology. UV–Vis spectroscopy was performed in the 300–1400 nm region. The obtained values of the absorption coefficient and band gap are 1.2eV. The thermal analysis is carried out by TGA.     

静电纺丝法制备的V2O5/MoO3复合光催化剂的表征及其光催化降解邻苯二甲酸二甲酯活性

邻苯二甲酸二甲酯是一种干扰人体内分泌系统的化学物质,尽管对人体具有潜在危害,目前仍做为塑料、醋酸乙烯酯、纤维素等生产过程中的添加剂而广泛使用.伴随着邻苯二甲酸二甲酯的生产和应用,自然界不可避免地受其污染.因此,如何有效降解排放在环境中的邻苯二甲酸二甲酯以减少其对人类的不利影响成为化学研究者的重要任务.通过半导体光催化剂高效利用太阳能光催化降解邻苯二甲酸二甲酯是一种有效方法. TiO2等半导体光催化剂由于光催化过程中产生的电子-空穴对极易复合导致其催化效率不高,减少光生电子-空穴对复合率进而提高光量子效率的方法有金属掺杂、非金属掺杂、表面敏化、半导体复合等多种手段.其中, MoO3由于其独特的结构和化学性质广泛应用于光催化领域,并常作为耦合剂与其他半导体(如TiO2)复合以提高光催化活性.在我们以前的工作中,曾使用MoO3做为耦合剂与V2O5复合,实验结果证明MoO3与V2O5复合形成异质结构有效提高了V2O5的光催化效率. MoO3由于其带隙较宽(约2.90 eV),对太阳光利用率不高,以及电子-空穴对极易复合导致MoO3实际光催化活性并不好.因此,我们考虑以MoO3做为主体, V2O5做为耦合剂研究n(V)/n(Mo)比对V2O5/MoO3复合光催化剂结构和性能的影响.我们以聚乙烯吡咯烷酮(PVP)、四水合钼酸铵((NH4)6Mo7O24·4H2O)和偏钒酸铵(NH4VO3)为原料,采用静电纺丝技术结合溶胶凝胶过程的方法,成功制备了具有不同n(V)/n(Mo)比的V2O5/MoO3复合光催化剂. XRD结果表明,当n(V)/n(Mo)<1/6时,钒离子掺杂进入MoO3晶格内,n(V)/n(Mo)>1/6时,部分钒离子掺杂进入MoO3晶格内,部分钒离子聚集形成V2O5晶体, V2O5晶体数量随着n(V)/n(Mo)逐渐增加,且尺寸有所增长.这一点在扫描电镜中得到了进一步的证实.扫描电镜结果表明α-MoO3呈规则的层状结构,为长度约3μm,宽度约2μm,厚度约500 nm的表面光滑的正交相MoO3微纳米片,而V2O5则为微纳米颗粒,其中表面光滑的层状MoO3微纳米片散乱分布在块状V2O5微纳米颗粒之间,并与V2O5微纳米颗粒团簇紧密接触.由于二者的紧密接触,可能在二者交界处形成了V2O5/MoO3异质结构.紫外-可见漫反射光谱数据表明,掺杂或者异质结构的形成有效降低了MoO3的带隙,促进了MoO3对可见光的吸收,拓宽了光响应范围.为进一步确定MoO3与V2O5复合前后元素的化学态变化,我们进行了XPS能谱测试.通过对V 2p和Mo 3d XPS谱图高斯曲线拟合发现,与纯V2O5相比, VM-6和VM-2中不同价态的V元素电子结合能均有所增加.同时, VM-6和VM-2中的Mo元素的电子结合能与纯MoO3相比有轻微的减少,这说明无论是掺杂还是异质结构的形成都使V离子和Mo离子的化学环境有所改变.我们以亚甲基蓝为探针反应,测试V2O5/MoO3复合光催化剂的催化活性.结果表明,无论掺杂还是异质结构的光催化剂光催化降解亚甲基蓝的活性均远大于纯MoO3和V2O5.这可能是由于V 3d杂质能级的存在以及V2O5和MoO3交界处异质结构的形成有效降低了MoO3的带隙,拓宽了光响应范围.另一方面,异质结构有利于光生电子-空穴对的分离,有效提高了光量子效率.其中, n(V)/n(Mo)的最佳比为1/2,亚甲基蓝的光降解率高达89.23%.为了测定V2O5/MoO3复合光催化剂对邻苯二甲酸二甲酯的光催化活性,我们选取了样品纯MoO3, V2O5, VM-6和VM-2进行测试.测定结果与光催化降解亚甲基蓝结果吻合, VM-2催化效果最高,可达82.20%.并通过高效液相色谱测定邻苯二甲酸二甲酯降解过程的中间产物为邻苯二甲酸.     

Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.     

Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility p- and n-channel polymer semiconductors

Understanding the relationship between molecular/macromolecular architecture and organic thin film transistor (TFT) performance is essential for realizing next-generation high-performance organic electronics. In this regard, planar π-conjugated, electron-neutral (i.e., neither highly electron-rich nor highly electron-deficient) building blocks represent a major goal for polymeric semiconductors, however their realization presents synthetic challenges. Here we report that an easily accessible (minimal synthetic steps), electron-neutral thienyl-vinylene (TVT)-based building block having weak intramolecular S···O "conformational locks" affords a new class of stable, structurally planar, solution-processable, high-mobility, molecular, and macromolecular semiconductors. The attraction of merging the weak TVT electron richness with supramolecular planarization is evident in the DFT-computed electronic structures, favorable MO energetics, X-ray diffraction-derived molecular structures, experimental lattice coehesion metrics, and excellent TFT performance. TVT-based polymer TFTs exhibit stable carrier mobilities in air as high as 0.5 and 0.05 cm(2)/V·s (n- and p-type, respectively). All-TVT polymer-based complementary inverter circuitry exhibiting high voltage gains (~50) and ring oscillator circuitry with high f(osc)(~1.25 kHz) is readily fabricated from these materials by simple inkjet printing.     

Vapor-phase synthesis of mesoporous SiO2-P2O5 thin films

Mesoporous SiO2-P2O5 films were synthesized from the vapor phase onto a silicon substrate. First, a precursor solution of cetyltrimethylammonium bromide (C16TAB), H3PO4, ethanol, and water was deposited on a silicon substrate by a spin-coating method. Then, the C16TAB-H3PO4 composite film was treated with tetraethoxysilane (TEOS) vapor at 90-180 degrees C for 2.5 h. The H3PO4-C16TAB composite formed a hexagonal structure on the silicon substrate before vapor treatment. The TEOS molecules penetrated into the film without a phase transition. The periodic mesostructure of the SiO2-P2O5 films was retained after calcination. The calcined films showed a high proton conductivity of about 0.55 S/cm at room temperature. The molar ratio of P/Si in the SiO2-P2O5 film was as high as 0.43, a level that was not attained by a premixing sol-gel method. The high phosphate group content and the ordered periodic mesostructure contributed to the high proton conductivity.     

溶液法制备的氧化锌多层膜及其场效应性质(英文)

通过旋涂法,采用不同浓度的前躯体制备了氧化锌多层膜,并制备了基于此多层膜的薄膜晶体管器件.实验证明,基于按照氧化锌前躯体浓度顺序为0.25、0.10和0.05 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的晶体管器件的载流子迁移率为0.02 cm.2V-.1s-1,高于按照浓度顺序为0.05、0.10和0.25 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率(0.013 cm2.V-.1s-1).原子力显微镜(AFM)结果表明,前一种薄膜粗糙度的均方根值(rms)为3.95 nm,而后一种薄膜粗糙度的rms远远高于前者,为4.52 nm,这就说明了氧化锌薄膜的粗糙度对薄膜的半导体性质有很大的影响,这是由于平整的薄膜有利于形成理想的源/漏电极与半导体层的接触.在晶体管中,起传输作用的半导体层是靠近ZnO/SiO2界面处的几纳米的半导体层中的氧化锌晶粒,因此起始形成的氧化锌薄膜的结晶度影响着晶体管的性能.采用X射线衍射(XRD)测试了多层膜中起始形成的薄膜的结晶性能.对于前一种薄膜,起始形成的薄膜为多晶薄膜,而对于后一种薄膜,起始形成的薄膜是无定形薄膜.因此,粗糙度以及起始形成的薄膜的结晶度影响着多层半导体薄膜的性质.     

Reexamination of CeCl3 and InCl3 as activators in the diastereoselective Mukaiyama aldol reaction in aqueous media

A search for suitable reaction conditions in Mukaiyama-type aldol condensations activated by CeCl(3) and InCl(3) revealed that the reaction proceeds best in i-PrOH/H(2)O (95:5). Contrary to literature precedent, no reaction was observed in pure water, and the encountered destruction of the starting silyl enol ether can be ascribed to initial hydrolysis of the Lewis acid. As anticipated from the dual parameter (pK(h), WERC value) characteristics of CeCl(3) and InCl(3), the former proved more efficient as Lewis acid-promoter, in terms of reaction speed and yield. Nevertheless, InCl(3) was a superior catalyst during evaluation of the diastereoselectivity of the process. In this regard, determination of diastereoselectivity as a function of time showed that the InCl(3)-catalyzed reaction is irreversible, whereas the CeCl(3)-catalyzed reaction is a reversible process. In both cases, formation of the syn product is kinetically preferred, although DeltaDeltaG(++)273K(InCl(3)) = 1.50 kcal/mol versus DeltaDeltaG(++)273K (CeCl(3)) = 0.38 kcal/mol. Molecular modeling (semiempirical PM3, ab initio HF/3-21G*, hybrid B3LYP/3-21G*, and B3LYP/LANL2DZ) of the diastereoselective aldol reaction promoted by InCl(3) supports a "closed", Zimmermann-Traxler transition state.     

Morphology and mechanical properties of extruded ribbons of LDPE/PA6 blends compatibilized with an ethylene-acrylic acid copolymer

Two grades of low density polyethylene (LDPE) were blended with polyamide-6 (PA) in the 75/25 and 25/75 wt/wt ratios and shaped into ribbons with a Brabender single screw extruder. An ethylene-acrylic acid copolymer (EAA) was used in the 2 phr concentration as a compatibilizer precursor (CP). The morphology of the ribbons and its evolution during high temperature annealing were investigated by scanning electron microscopy (SEM). The results confirmed that EAA does actually behave as a reactive compatibilizer for the LDPE/PA blends. In fact, in the presence of EAA, the interfacial adhesion is improved, the dispersion of the minor phase particles is enhanced and their tendency toward fibrillation is increased, especially for the blends with the higher molar mass LDPE grade. The mechanical properties of the latter blends were found to be considerably enhanced by the addition of EAA, whereas the improvement was relatively modest for the blends with the lower molar mass LDPE. The fracture properties of double end notched samples of the ribbons prepared with the blends containing the lower molar mass LDPE grade were also studied. It was shown that, despite of the increased interfacial adhesion caused by the presence of EAA, the latter plays a measurable positive effect on the fracture properties only for the blends with LDPE as the matrix.     

溶胶－凝胶法制备镶嵌在SiO2玻璃中的InAs纳米晶

以As2O3,InCl3·4H2O和正硅酸乙酯为原料,通过水解、缩聚制备了xIn2O3-xAs2O3-100SiO2(x=0.5～7.5)凝胶,在氧气中加热到450℃对凝胶热处理使其转化成凝胶玻璃,再在200～500℃与氢气反应,结果在SiO2凝胶玻璃中形成了立方相InAs,利用XRD测试了InAs纳米颗粒的大小、发现随着反应温度的升高及掺杂量的增加,InAs纳米颗粒粒径从6增大到29nm,电子衍射表明凝胶玻璃中的InAs纳米颗粒为多晶结构。     

Rh-V alloy formation in Rh-VOx thin films after high-temperature reduction studied by electron microscopy

Rh nanoparticles (mean size 10 and 15 nm), prepared by epitaxial growth on NaCl surfaces, were covered with layers of crystalline vanadium oxide (mean thickness 1.5 and 25 nm) by reactive deposition in 10(-2) mbar O2. The 1.5 nm film was further stabilized with a coating layer of 25 nm amorphous alumina. The so-obtained Rh/vanadia films, containing vanadium in the V3+ and V2+ state, were treated in 1 bar O2 at 673 K for 1 h and thereafter reduced in 1 bar H2 at increased temperatures, particularly between 723 and 873 K. The structural and morphological changes were followed by (high-resolution) transmission electron microscopy and selected area diffraction. Oxidation at 673 K transforms the purely vanadia-supported samples into Rh/V2O5, while in the alumina-supported films containing only small amounts of VOx, the formation of topotactic V2O3 is observed. The formation of Rh-V alloys during the subsequent reduction is strongly determined by the intimate contact and the structural and orientational relationship between Rh particles and the surrounding VOx phase. Reduction above 473 K transforms the support into substoichiometric vanadium oxides of composition VO and V2O. Analysis of high-resolution images and diffraction patterns reveals the presence of different alloy phases after reduction with increasing T (from 573 up to 823 K). In the alumina-supported film (low V/Rh ratio) the epitaxial alignment between the Rh particles and the surrounding V2O3 phase apparently favours the primary formation of defined alloys of type V3Rh and VRh3, followed by VRh at higher temperature. On the contrary, mainly V3Rh5 is formed in the purely VOx-supported Rh/films, due to different epitaxial relations in the initial state. Possible pathways of alloy formation are discussed.     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

金属修饰半导体硅组成光电化学电池的研究

本文以n/n^+-Si和p/n^+-Si为基底, 通过铂、镍等金属膜表面修饰后组成光电化学电池, 探讨了金属/n-Si间的Schottky势垒对电池开路光电压的影响。研究了铂膜修饰电极的光电化学性能。用p/n^+-Si电极, 在65mW·cm^-^2的光照射下, 最佳电池的输出参数是: 开路光电压0.530V, 短路光电流47.6mA·cm^-^2, 填充因子0.35, 光电转换效率13.6%, 连续照光75小时, 电池性能基本稳定。