Interfacial study of cubic boron nitride films deposited on diamond

We have studied the nucleation and growth of cubic boron nitride (cBN) films deposited on silicon and diamond-coated silicon substrates using fluorine-assisted chemical vapor deposition (CVD). These comparative studies substantiate that the incubation amorphous/turbostratic BN layers, essential for the cBN nucleation on silicon, are not vital precursors for cBN nucleation on diamond, and they are inherently eliminated. At vastly reduced critical bias voltage, down to -10 V, cBN growth is still maintained on diamond surfaces, and cBN and underlying diamond crystallites exhibit an epitaxial relationship. However, the epitaxial growth is associated with stress in the cBN-diamond interfacial region. In addition, some twinning of crystallites and small-angle grain boundaries are observed between the cBN and diamond crystallites because of the slight lattice mismatch of 1.36%. The small-angle grain boundaries could be eliminated by imposing a little higher bias voltage during the initial growth stage. The heteroepitaxial growth of cBN films on different substrate materials are discussed in the view of lattice matching, surface-energy compatibility, and stability of the substrate against ion irradiation.     

Multi-step Reaction Route Developed for Improving Crystallinity of Boron Nitride Nanoparticles

A multi-step reaction route was developed to synthesize boron nitride(BN) nanoparticles via the reaction between NaN₃ and BCl₃ in a benzene-thermal solution. By means of this route, the crystallinity of BN nanoparticles was improved via increasing the reaction steps. Meanwhile, a phase transformation from hexagonal BN(hBN) or turbostratic BN(tBN) to cubic BN(cBN) occurred, resulting in the increase of cBN content. Moreover, the content of cBN also slightly increased when the temperature was elevated from 265 ℃ to 280 ℃.     

Comparative investigations of structure and properties of BCN coatings deposited by thermal and plasma-enhanced CVD

Hard BCN films were deposited by chemical vapour deposition (CVD) on Si(100) substrates. TCVD (thermal activated) and PECVD (GD or RF microwave plasma-activated, respectively) were used. The films were analysed with respect to chemical state, composition, morphology and microstructure, oxidation behaviour and hardness. Wavelength dispersive X-ray spectroscopy (EPMA), infrared spectroscopy (IR), transmission electron microscopy (TEM), differential thermal analysis (DTA) and hardness evaluation were employed for film characterization. A correlation between deposition parameters and film composition, structure and hardness could be proved in every CVD process. Parallels between TCVD and PECVD films emerged in the case of chemical composition and the correlation between carbon content and hardness values. Considerable differences exist with regard to the microstructure, especially the texture of the films. Moreover in TCVD films the carbon is preferentially incorporated between the BN basal planes, whereas in PECVD films it is incorporated preferentially in as well as between the BN basal planes.     

Nanocomposite ta-C films prepared by the filtered vacuum arc process using nanosized Ni dots on a Si substrate

Recently, structural manipulation of tetrahedral amorphous carbon (ta-C) film at the nanometer scale has attracted much attention. We demonstrate a novel method to obtain a nanocomposite film where nanoscale columns of graphitic phase are embedded in a tetrahedral amorphous carbon matrix. When using a Si substrate with nanosized Ni dots on the surface, graphitic columns grew selectively on the Ni dots, while a dense ta-C film was deposited on the bare Si surface. The growth of the graphitic columns is closely related to the nanosized Ni dots that catalyze the graphitic-carbon formation in a filtered vacuum arc deposition condition.     

Highly conducting graphitic carbon films and nano patterns from poly(p-phenylenevinylene) prepared on the surface of silicon wafers by the CVD method

We could prepare highly electrically conducting graphitic carbon films and nano patterns by carbonizing the poly(p-phenylenevinylene) (PPV) films and nano patterns prepared on the silicon surface by the chemical vapor deposition polymerization method of α,α'-dichloro-p-xylene. When the PPV films on silicon wafers were thermally treated at 850°C highly oriented graphitic carbon films were obtained which exhibit an electrical conductivity higher than 0.7 x 10³ Scm⁻¹. This conductivity value is more than 10 times the value for the carbon films obtained from bulk PPV films or glassy carbons heat treated at the same temperature. Moreover, nano patterns of graphitic carbons were easily obtained on silicon wafers through carbonization of nano patterned PPV obtained by the CVD polymerization method.     

Dimer-induced stabilization of H adsorbate cluster on BN(0001) surface

Using first-principles calculations, we have studied successive adsorption of hydrogen atoms on a sp(2)-bonded boron nitride graphitic sheet. Our calculations show that clustering proceeds through the creation of contiguous H-H orthodimer structures stabilizing the H adsorbate cluster on the BN(0001) surface, leading eventually to the formation of hydrogen-contiguous boat-shaped quartets.     

Thermal stability of cubic boron nitride films deposited by chemical vapor deposition

Thermal stability of well-crystallized cubic boron nitride (cBN) films grown by chemical vapor deposition has been investigated by cathodoluminescence (CL), Raman spectroscopy, and scanning electron microscopy (SEM) with the cBN films annealed at various temperatures up to 1,300 degrees C. The crystallinity of the cBN films further improves, as indicated by a reduction of the relevant Raman line width, when the annealing temperature exceeds 1,100 degrees C. Structural damage or amorphization was observed on the grain boundaries of the cBN crystals when annealing temperature reaches 1,300 degrees C. The CL spectra are found to be unchanged up to 1,100 degrees C after annealing at 500 degrees C, showing the stability of the cBN films in electronic properties up to this temperature. New features were observed in the CL spectra when annealing temperature reaches 1,200-1,300 degrees C.     

Marked adsorption irreversibility of graphitic nanoribbons for CO2 and H2O

Graphene and graphitic nanoribbons possess different types of carbon hybridizations exhibiting different chemical activity. In particular, the basal plane of the honeycomb lattice of nanoribbons consisting of sp(2)-hybridized carbon atoms is chemically inert. Interestingly, their bare edges could be more reactive as a result of the presence of extra unpaired electrons, and for multilayer graphene nanoribbons, the presence of terraces and ripples could introduce additional chemical activity. In this study, a remarkable irreversibility in adsorption of CO(2) and H(2)O on graphitic nanoribbons was observed at ambient temperature, which is distinctly different from the behavior of nanoporous carbon and carbon blacks. We also noted that N(2) molecules strongly interact with the basal planes at 77 K in comparison with edges. The irreversible adsorptions of both CO(2) and H(2)O are due to the large number of sp(3)-hybridized carbon atoms located at the edges. The observed irreversible adsorptivity of the edge surfaces of graphitic nanoribbons for CO(2) and H(2)O indicates a high potential in the fabrication of novel types of catalysts and highly selective gas sensors.     

ESCA investigations on pyrolytic carbon films for fiber coatings

Photoelectron spectroscopy on pyrolytic carbon films revealed a main part of carbon atoms in graphitic planes and a smaller part of functional groups with oxygen bonded to carbon atoms. Oxygen totalled a share of 10 at% and more of the carbon coating. The films with a turbostratic structure consist of nearly parallel oriented atomic layers of hexagonal rings with dimensions in the nanometer scale, which is well known from HREM investigations. The oxygen atoms are proposed to saturate the numerous dangling bonds around these individual atomic planes. The oxygen atoms form double bonds or bridges between carbon atoms. Received: 15 July 1998 / Revised: 28 January 1998 / Accepted: 2 February 1998     

高温高压Li3N-hBN体系cBN转变的热力学分析

以经典热力学第二定律ΔG<0为依据,分析了静态高温高压触媒法合成立方氮化硼(cBN)过程中发生的可能反应.考虑温度和压强对反应物相体积的影响,计算了六方氮化硼(Li3N-hBN)体系中hBN+Li3N→Li3BN2,h BN→cBN及Li3BN2→Li3N+cBN反应在高温高压条件下的ΔG.结果证实,Li3BN2由Li3N与hBN在高温高压(T>1300 K,P>3.0 GPa)条件下反应得到,在cBN的合成(T=1600～1800 K,P=4.6～6.0 GPa)条件下,hBN和Li3BN2都有向cBN转化的倾向,但由hBN向cBN直接转变的反应自由能比Li3BN2分解生成cBN的反应自由能更负,反应的可能性更大.探讨了高温高压条件下立方氮化硼的转变机理。     

等离子化学气相沉积硅-硼-氮复合薄膜的组成和结构

利用X射线衍射（XRD）和X光电子能谱（XPS）等技术对射频－直流－等离子化学气相沉积（RF－DC－PVCD）在钢基本上Si-B-N复合薄膜的组成和结构进行分析和研究；结果表明，通过给试样基体加一适当的直流负偏压，得到含有显著六方氮化硼（h-BN)，立方氮化硼（c-BN)结晶相的Si-B-N薄膜。     

Spectroscopic characterization of carbon chains in nanostructured tetrahedral carbon films synthesized by femtosecond pulsed laser deposition

A comparative study of carbon bonding states and Raman spectra is reported for amorphous diamondlike carbon films deposited using 120 fs and 30 ns pulsed laser ablation of graphite. The presence of sp(1) chains in femtosecond carbon films is confirmed by the appearance of a broad excitation band at 2000-2200 cm(-1) in UV-Raman spectra. Analysis of Raman spectra indicates that the concentrations of sp(1)-, sp(2)-, and sp(3)-bonded carbon are approximately 6%, approximately 43%, and approximately 51%, respectively, in carbon films prepared by femtosecond laser ablation. Using surface enhanced Raman spectroscopy, specific vibrational frequencies associated with polycumulene, polyyne, and trans-polyacetylene chains have been identified. The present study provides further insight into the composition and structure of tetrahedral carbon films containing both sp(2) clusters and sp(1) chains.     

Hydrothermal hot-pressing induced phase transition in hexagonal boron nitride

The phase transition of hBN nanocrystals induced by hydrothermal hot-pressing process has been investigated by XRD, FTIR, TEM and HRTEM. It was found that a phase transition of hBN → tBN → aBN occurred with increasing hot-pressing temperature, i.e., hBN transformed into tBN at above 270 °C, and followed by another transformation from tBN to aBN at 310 °C. In addition, FTIR spectra and HRTEM images indicate that a small amount of cBN formed directly from the amorphous BN matrix at 75 MPa and 310 °C. This phenomenon is similar to what happened in conventional high temperature and high pressure method, which is believed to promote the phase transition from hBN to cBN.     

Fabrication of SiC-C coaxial nanocables: thickness control of C outer layers

Aligned SiC-C coaxial nanocables were synthesized via the direct growth of SiC nanowires from silicon substrates and subsequent carbon deposition using pyrolysis of methane; the average diameter of the SiC nanowire cores is 20 nm; the thickness of the C outer layers is controlled in the range 3-50 nm; the degree of crystalline perfection of the graphitic sheets increases with the thickness.     

Analytical characterization of thin carbon films

CH(x) films on silicon substrates deposited by a Mesh Hollow Cathode Process (MHC) were analyzed by various techniques. The films were produced with varying deposition times, resulting in thicknesses ranging from ~2-20 nm. X-Ray Reflectivity (XRR) was used to determine the film thicknesses and the deposition rate. A good correlation of measured XRR thicknesses with SIMS sputter depths down to the film-substrate transition was found.An AFM-based nanoscratching technique was applied to test the wear resistance of the thin overcoats. The MHC films reveal slightly decreasing scratch resistance for reduced film thicknesses, which can be explained by a higher fraction of soft interface zones for thinner films.This is in accordance with Raman spectroscopic measurements in the visible spectral range which were carried out to examine the carbon bonding properties. Combined analysis of G peak position and D/G peak intensity ratio indicates a more graphitic structure for film thicknesses less than 10 nm.     

Fabrication and characterization of gold nanoclusters on phosphorus incorporated tetrahedral amorphous carbon electrode

Gold nanoclusters (NCs) were electrodeposited on phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) electrode and characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, cyclic voltammetry and chronoamperometry. The nanosized Au deposits controlled by adjusting the deposition time represented a progressive nucleation and diffusion-controlled growth of separate three-dimensional islands on limited sites. Significant enhancement of electrochemical activity and reversibility towards ferricyanide oxidation reaction was observed after the deposition of Au NCs on ta-C:P film, implying ta-C:P/Au as a potential material for the application of electroanalysis.     

Prepared Low Stress Cubic Boron Nitride Film by Physical Vapor Deposition

We present low stress cubic boron nitride (cBN) films with a transition layer deposited on the metal alloy substrates by tuned substrate radio-frequency magnetron sputtering. The films were characterized by Fourier transform infrared spectroscopy and transmission electron microscopy (TEM). The IR peak position of cubic boron nitride at 1006.3 cm⁻¹, which is close to the stressless state, indicates that the film has very low internal stress. The TEM image shows that pure CBN phase exists on the surface of the film. Several phases of boron nitride were found at the medium implantation dose. It is believed that the transition from the low ordered phases to cBN phase occurred during implantation.     

Analysis of silicon carbonitride films by laser mass spectrometry

The possibilities of laser mass spectrometry in determining the main composition of silicon carbonitride films (SiC _x N _y ) deposited on a substrate made of germanium and gallium arsenide are considered. The conditions of laser sampling were selected and the instrument was adjusted to identify the major components of films synthesized by the plasma deposition. The instrument was calibrated by neat silicon compounds to obtain quantitative data on the concentrations of carbon, nitrogen, oxygen, and silicon. A calibration method was proposed, and the concentration of hydrogen in the layers of silicon carbonitride was estimated.     

Effect of pH on the Hydrothermal Synthesis of BN Nanocrystals

Boron nitride (BN) has been synthesized using hydrothermal synthesis method. The experimental results showed that the pH value of the reaction solution has an important effect on the yield and phases of BN samples. As the pH value decreased, the content of cBN increased and the yield improved. The increase in cBN content is resulted from the conversion of oBN into cBN under hydrothermal condition, and the growth of cBN nanocrystals may due to the decrease in the reaction speed, thus the crystalline perfection of BN improved when the pH value decreased.     

Doubling the Capacity of Lithium Manganese Oxide Spinel by a Flexible Skinny Graphitic Layer

By coating nanoparticular lithium manganese oxide (LMO) spinel with a few layers of graphitic basal planes, the capacity of the material reached up to 220 mA h g^?1 at a cutoff voltage of 2.5 V. The graphitic layers 1) provided a facile electron‐transfer highway without hindering ion access and, more interestingly, 2) stabilized the structural distortion at the 3 V region reaction. The gain was won by a simple method in which microsized LMO was ball‐milled in the presence of graphite with high energy. Vibratory ball milling pulverized the LMO into the nanoscale, exfoliated graphite of less than 10 layers and combined them together with an extremely intimate contact. Ab initio calculations show that the intrinsically very low electrical conductivity of the tetragonal phase of the LMO is responsible for the poor electrochemical performance in the 3 V region and could be overcome by the graphitic skin strategy proposed.