A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3μm surface emitting laser diodes

A distributed Bragg reflector (DBR) utilizing the digital alloy Al_0.9Ga_0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al_0.9Ga_0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al_0.9Ga_0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.     

Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga_1−xIn_xSb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga_1−xIn_xSb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga_1−xIn_xSb vapour composition and solid composition has been studied at a V/III ratio of 0.78.     

Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE

The effects of substrate temperature upon the optical property, composition and surface morphology have been investigated on nominally undoped Zn_1−xMg_xTe layers grown on (1 0 0) ZnTe substrates by atmospheric pressure metal organic vapor phase epitaxy (MOVPE). It was found that Mg composition increases with decreasing substrate temperature. The result of low temperature photoluminescence (PL) measurement suggests that the optical quality of Zn_1−xMg_xTe layers becomes better with decreasing substrate temperature. On the other hand, there is a narrow range of optimal substrate temperature for a smooth surface morphology. For all the layers, a two-mode behavior with ZnTe- and MgTe-like longitudinal optical phonon modes was confirmed by Raman scattering.     

Ab initio calculations of structural,electronic, optical and thermodynamic properties of alkaline earth tellurides BaxSr1−XTe

Structural, electronic and thermodynamic properties of SrTe and BaTe compounds and their ternary mixed crystals Ba_xSr_1−xTe in the rock-salt structure have been studied with density functional theory (DFT), whereas the optical properties have been obtained by using empirical methods such as the modified Moss relation. The exchange-correlation potential was calculated using the generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) of Teter–Pade (TP). In the present work, we used the virtual-crystal approximation (VCA) to study the effect of composition (x). The calculated lattice parameters at equilibrium volume and the bulk modulus for x=0 and x=1 are in good agreement with the literature data. Furthermore, the Ba_xSr_1−xTe alloys are found to be an indirect band gap semiconductor. In addition, we have also predicted the heat capacities (C_V), the entropy(S), the internal energy (U) and the Helmholtz free energy (F) of the parent compounds SrTe and BaTe.     

Studies on growth and characterization of ternary CdS1−xSex alloy thin films deposited by chemical bath deposition technique

Ternary alloyed CdS_1−xSe_x thin films of variable composition ‘x’ were grown by the simple and economical chemical bath deposition technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS_1−xSe_x films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS_1−xSe_x thin films via modulation in composition ‘x’. Electrical resistivity of CdS_1−xSe_x thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS_1−xSe_x thin films have potential applications in opto-electronic devices.     

Mössbauer and optical investigation of Co3−x Fe x O4 thin films grown by sol–gel process

Structural transformation and the related variation in magnetic and optical properties of Co_3?x Fe _x O₄ thin films grown by a sol–gel method have been investigated as the Fe composition varies up to x?=?2. The normal spinel phase is dominant below x?=?0.55 and the inverse spinel phase grows as x increases further. Conversion electron Mössbauer spectroscopy (CEMS) measurements indicate that the normal spinel phase have octahedral Fe³⁺ ions mostly while the inverse spinel phase contain octahedral Fe²⁺ and tetrahedral Fe³⁺ ions. For higher Fe composition (x?>?1.22), Co²⁺ ions are found to substitute the octahedral Fe²⁺ sites. The measured optical absorption spectra for the Co_3?x Fe _x O₄ films by spectroscopic ellipsometry support the CEMS interpretation.     

First-principles calculations of structural,electronic and thermal properties of Zn1−x Mg x S ternary alloys

Structural, electronic and thermal properties of Zn_1?x Mg _x S ternary alloys are studied by using the full potential-linearized augmented plane wave method (FP-LAPW) within the density functional theory (DFT). The Wu-Cohen generalized gradient approximation (WC-GGA) is used in this approach for the exchangecorrelation potential. Moreover, the modified Becke-Johnson approximation (mBJ) is adopted for band structure calculations. The dependence of the lattice constant, bulk modulus and band gap on the composition x showed that the first exhibits a small deviation from the Vegard’s law, whereas, a marginal deviation of the second from linear concentration dependence (LCD). The bowing of the fundamental gap versus composition predicted by our calculations agrees well with the available theoretical data. The microscopic origins of the gap bowing are explained by using the approach of Zunger and co-workers. Thermal effects on some macroscopic properties of Zn_1?x Mg _x S alloys are also investigated using the quasi-harmonic Debye model, in which the phononic effects are considered. As, this is the first quantitative theoretical prediction of the thermal properties of Zn_1?x Mg _x S alloys, no other calculated results and furthermore no experimental studies are available for comparison.     

Optical characterization of band gap graded ZnMgO films

We investigated the optical properties of compositionally graded Zn_1?xMg_xO (g-ZnMgO) films using spectroscopic ellipsometry. The g-ZnMgO and ZnO films were grown on Pt/Ti/SiO₂/Si substrates by ultrasonic spray pyrolysis. We simulated a uniformly graded optical band gap layer on the Pt substrate to reproduce the experimental result. The band gap of the bottommost layer of the g-ZnMgO film was estimated to be ～3.22 eV, the same as the undoped ZnO film. Then we considered a linearly increasing band gap with the film composition, and obtained a band gap of ～3.56 eV for the topmost layer of the film. In addition, the exciton peak showed a strong increase for the topmost layer of the film suggesting an important role of doping.     

Predicted electronic and structural properties of BxIn1−xAs

Structural and electronic properties of the B_xIn_1−xAs ternary alloy are studied using the tight binding method. The optical band gap bowing is calculated for the first time in the full range of Boron composition x. It is found to be strong. A small deviation from virtual crystal approximation is found for the bond length. New results on elastic constants are reported. The obtained results are in good agreement with the available data in the literature.     

The optical properties of CdxZn1−xS thin films on glass substrate prepared by spray pyrolysis method

A series of Cd_xZn_1−xS thin films have been deposited on glass substrates using spray pyrolysis technique. The crystallinity and microstructure of Cd_xZn_1−xS thin films have been investigated by X-ray diffraction (XRD). Based on the results of Hall measurements, the films obtained were an n-type semiconductor. The X-ray data analysis of Cd_xZn_1−xS thin films showed that the grain size of the Cd_xZn_1−xS increased with increase in Cd composition. It is observed that the band gap increases as the Cd composition decreases. The results also showed a blue shift of absorption edge of optical transmission spectra is increases as Zn ratio increases. The effects of Cd composition on the structural and optical properties of Cd_xZn_1−xS thin films were related to their grain size, stress and carrier concentration.     

Combinatorial synthesis and optical characterization of alloy and superlattice films based on SrTiO3 and LaAlO3

We have grown alloy and superlattice films consisting of SrTiO₃ (STO) and LaAlO₃ (LAO) by pulsed laser deposition using composition-spread technique. All the (STO)_x(LAO)_1−x (0 ≤ x ≤ 1) alloy and superlattice films exhibited a single-phase perovskite structure. The optical properties of these films were characterized by absorption spectroscopy at room temperature. The spectra show a broad absorption due to O 2p-Ti 3d(t_2g) transition in an ultraviolet region. We found that absorption edges of both alloy and superlattice films systematically shifted to higher energy with increasing LAO composition. Clear difference was observed in the composition dependence of the indirect and a direct band edges.     

The stable structures of iron pnictides AFeAs (A = alkali and alkaline-earth metals): A first principles study

We have investigated the structural stabilities of iron arsenide compounds A_x(FeAs)_1−x (A = alkali and alkaline-earth metals) by first principles calculations. We find that (i) all of the experimental “122” type structures with composition x=1/3 are stable; (ii) all of the “111” type structures with composition x=1/2 except CsFeAs are stable; (iii) K₃FeAs with composition x=3/4 is stable. The predicted stable KFeAs, RbFeAs, SrFeAs, BaFeAs, K₃FeAs have the As-Fe-As bond angles close to the ideal tetrahedral angles, indicating that they may be superconductors.     

Properties of CuIn(SxSe1−x)2 polycrystalline thin films prepared by chemical spray pyrolysis

CuIn(S_xSe_1−x)₂ thin polycrystalline films were grown by the chemical spray pyrolysis method on the glass substrate at 280-400°C. The alloy composition in the film was studied with relation to that in the splay solution. Films were characterized by X-ray diffraction, optical absorption, Raman spectroscopy, resistivity and surface morphology. The CuInSe₂-rich alloy films grown at high substrate temperature had chalcopyrite structure, while, the CuInS₂-rich films grown at low substrate temperature exhibited sphalerite structure. Optical-gap energies were smaller than that of the bulk crystal by 0.1-0.2 eV for CuInS₂-rich films. Raman spectra exhibited both CuInSe₂-like and CuInS₂-like A₁ modes, and their relative changed systematically with alloy composition.     

Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy

InGaAs layers on undoped GaAs (0 0 1) substrates were grown by atmospheric pressure metalorganic vapour phase epitaxy (AP-MOVPE). In order to obtain films with different indium composition (x_In), the growth temperature as a growth parameter, was varied from 420 to 680 °C. Furthermore, high-resolution X-ray diffraction (HRXRD) measurements were used to quantify the change of x_In. Crystal quality has been also studied as a function of growth conditions. On the other hand, laser reflectometry (LR) at 632.8 nm wavelength, was employed to in situ monitor epitaxy. Reflectivity-time signal was enabled to evaluate structural and optical properties of samples. We have fitted experimental data to determine optical constants and growth rate of InGaAs at 632.8 nm. In addition, the fitting provided InGaAs thickness as a function of growth time. Based on ex situ characterization by scanning electronic microscopy (SEM) and HRXRD, we propose a practical method, relating the contrast of first reflectivity maximum with the X-ray diffraction peak angular difference between the substrate and epitaxial layer, to determine in situ the In solid composition in InGaAs alloys.     

Optical and physical properties of different composition of InxSe1−x thin films

Thin film binary alloys of In_xSe_1−x (0.05?x?0.30) have been prepared by the thermal evaporation technique. The optical transmission and reflection spectrum of these films were measured in the range 300-1100 nm. Both refractive index, n and extinction coefficient k have been determined from transmission and reflection measurements in terms of Murmann's equations. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The width of band tail is determined and the optical absorption edge is described using the ‘non-direct transition’ model proposed by Tauc. Finally, the relationship between the optical gap and chemical composition in In_xSe_1−x amorphous system is discussed in terms of the average heat of atomization H_s and average coordination number N_c. The results of these calculations can be used rationalize the observed optical properties of these materials. Finally, the chemical bond approach has been also applied to interpret the decrease of the glass optical gap with increasing In content.     

Growth and luminescent properties of (Lu–Y)AlO3:Ce single crystalline films

The work is dedicated to the development of scintillating screens based on single crystalline films (SCF) of Ce doped Lu–Y–Al perovskites grown by the liquid phase epitaxy method. We show in this work that Lu_1−xY_xAP:Ce SCF with very good structural and optical perfection can be grown from the PbO-based flux onto YAP substrates in all range of x-values. We also found the Lu_1−xY_xAP:Ce SCF can be crystallized by LPE method from the lead free BaO–B₂O₃–BaF₂ flux onto YAP substrates in the range of x values up to 0.4 formula units.     

Raman scattering from GaSe1−xTex

The long-wavelength optical phonons of the layer GaSe_1?xTe_x have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1,06 μm line of the continuously operated YAG:Nd³⁺ laser. Detailed study of the Raman spectra of GaSe_1?xTe_x solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal ?-GaSe to monoclinic GaTe in GaSe_1?xTe_x solid solutions takes place in the composition range 0.27 ? × ? 0.72. Only one mode behaviour of the optical phonons was observed in GaSe_1?xTe_x system.     

Formation of ZnO and Zn1−xCdxO films on CdTe/CdZnTe single crystals

In this work we report on the properties of ZnO and Zn_1−xCd_xO films formed on top of CdTe and CdZnTe single crystals. The films have been obtained by thermal evaporation of Zn metal films and further oxidation in atmospheric conditions. The structural and compositional characteristics of the films have been analysed by means of scanning electron microscopy and energy-dispersive X-ray analysis. The chemical composition of the films as a function of growth parameters has been obtained. It has been possible to demonstrate by Raman spectroscopy the formation of both ZnO and Zn_1−xCd_xO films. The possible inter-diffusion effects between the films and the substrate, derived from the oxidation process, have been discussed. It has been possible to check by means of photoluminescence, the optical quality of the ZnO and Zn_1−xCd_xO films, also regarding to the presence of local changes. Differences between the optical spectra obtained from various ZnO films grown on top of CdTe and CdZnTe substrates enabled the determination of compositional differences introduced by the substrate when the deposition parameters are modified.     

Selective growth of InAs islands on patterned GaAs (100) substrate

By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a In_xGa_1−xAs strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence.