Solid solutions of CdSn(As1−xPx)2 and their properties

We have grown single crystals of CdSn(As_1–xP_x)₂ solid solutions over the entire range of x. On the basis of the temperature dependence of the Hall coefficient and the Hall mobility, we conclude that there is a mixed carrier scattering mechanism in all of these solid solutions, over the entire temperature range from 100 to 500 K, involving both impurity ions and thermal lattice phonons. IR absorption and photoconductivity spectra show that the band gap in the solid solutions varies linearly with composition. We conclude that crystals in the range 0.5相似文献   

Electrical conduction properties of Si δ-doped GaAs grown by MBE

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25–300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures.     

СВОЙСТВА СУРЬМЯНИСТОГО КАДМИЯ, ЛЕГИРОВАННОГО СЕРЕБРОМ, ПРИ НИЗКИХ ТЕМПЕРАТУРАХ

The temperature dependence of the resistivity and the Hall coefficient of Ag doped CdSb single crystals was investigated in the temperature range of 1.5–300°K. It was shown that Ag in CdSb gives shallow acceptor levels with an activation energyE _a =3.5×10^–3 eV. Presence of the admixture band determines the electrical properties of crystals at low temperatures. The energy width of this band is about 10^–3 eV for slightly doped crystals.     

Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K

The Hall mobility of undoped n-type conducting SrTiO₃ single crystals was investigated in a temperature range between 19 and 1373 K. Field calculations were used to estimate the influence of sample shape and electrode geometry on the measured values. Between 19 and 353 K samples, which were quenched under reducing conditions, show an impurity scattering behavior at low temperature and high carrier concentrations and a phonon scattering mechanism at room temperature. In this temperature region, no carrier-density-dependent mobility was found. In conjunction with measurements of the mass difference before and after reoxidation, the oxygen deficiency and the oxygen vacancy concentration could be determined. The oxygen vacancies proved to be singly ionized. Above 873 K, Hall mobility and carrier concentration had been determined as a function of both oxygen partial pressure and temperature for the first time. In this temperature range the mobility does not depend on carrier concentration, but shows aT ^–1.5 dependence.     

Current carrier mobility in manganese-doped cadmium telluride

The possibility of substantial influence of a manganese impurity on the magnetic and optical properties of CdTe, which is explained by the state and interaction of the Mn 3d⁵-electron spins in the CdTe crystal lattice, is shown in [1–3]. An investigation of the influence of the Mn impurity on current carrier scattering in this material is of interest. To this end, the temperature dependence of the Hall mobility of electrons in CdTe-Mn single crystals is investigated in this paper in the temperature range 77–435°K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 24–28, April, 1982.     

Density of states in the impurity d band and inelastic electron scattering by a system of mixed-valence iron ions in HgSe: Fe crystals

The resistivity and the Hall coefficient of HgSe: Fe crystals with various iron content are experimentally studied in the temperature range 1.3≤T≤300 K and in magnetic fields up to 60 kOe. The temperature dependences of the density and mobility of conduction electrons in these crystals are determined. The influence of spatial charge ordering in the system of mixed-valence iron ions on impurity states in HgSe: Fe crystals is considered. The density of states in the impurity d band is theoretically analyzed, and inelastic electron scattering in which bi-and trivalent iron ions are recharged is discussed. It is shown that the experimentally detected features in the dependence of the density and mobility of electrons on temperature and iron impurity content can be explained by the influence of Coulomb correlations in the mixed-valence iron ion system on the structure of the impurity d band.

     

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.     

Explanation of the temperature variation of Hall coefficient of doped bismuth

The Hall effect in single crystals of bismuth doped with tin and lead has been measured in the temperature range 80 to 300 K. An attempt has been made here to explain the observed variations of Hall coefficient with temperature by considering the relative variation of the free carrier concentrations with temperature in different bands in alloys of bismuth in addition to variation of other parameters. Calculations have been made to see the effect of the overlap on Hall coefficient for different values of band overlap. The experimental curves are in satisfactory agreement with the theoretical calculations.     

Electronic properties of epitaxial 6H silicon carbide

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200 K), impurity and space charge scattering. A value of $\text{360}\text{cm}{}^2\text{V}$ sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated.     

Analysis of electrical conduction in an <Emphasis Type="BoldItalic">n</Emphasis> -type GaAs epilayer

The magnetic field dependence of conductivity tensor components, magnetoresistance, and the Hall coefficient have been analyzed in an n-type Si-doped GaAs epilayer at temperatures from 11 to 295 K. Carriers from the conduction band and the impurity band take part in the electrical conduction. The conduction band is located in the epilayer and the impurity band is located in a narrow layer, less than 0.1 m thick, between the GaAs buffer and GaAs semi-insulating substrate. At temperatures below 20 K the localization and magnetic freeze-out of the conduction band electrons have been taken into account as quantum corrections to the electrical conduction. The dependence of the mobility on energy has been considered in the analysis of the experimental data. A wide peak of partial conductions versus mobility appears in the mobility spectrum. From the analysis of the mobility spectrum of conduction band electrons it follows that at low temperatures the mobility of non-degenerated conduction band electrons is limited by scattering on screened charge centers. The mobility spectrum technique has been used as a tool for interpolation and extrapolation of the experimental data beyond the experimentally investigated magnetic field range. PACS 72.20.-i; 72.60.+g     

Halleffekt und Leitfähigkeitsmessungen an Zinkoxid-Einkristallen mit Sauerstofflücken als Donatoren

The electrical conductivity and Hall effect of pure zinc oxide single crystals have been measured from 5 to 300 K. The temperature dependence of the conductivity and the charge carrier concentration is similar to silicon and germanium. The low temperature conduction mechanism depending on the impurity concentration is explained by means of hopping conductivity and impurity band conduction. The impurity band is supposed to be built up of overlapping wave functions of the excited donor states. The results have been discussed supposing that the donors are oxygen vacancies occupied by one or by two electrons.     

Observation of impurity conduction associated with the L-minima in n-GaSb(Te)

Hydrostatic pressure measurements of Hall coefficient and resistivity in n-GaSb(Te) have been carried out over the temperature range 1.4 K–300 K. The results give direct evidence for impurity conduction related to the Te donor states associated with the L conduction band minima.     

The Hall effect in the organic conductor TTF-TCNQ: choice of geometry for accurate measurements of a highly anisotropic system

We have measured the Hall effect on recently synthesized single crystals of the quasi-one-dimensional organic conductor TTF-TCNQ (tetrathiafulvalene-tetracyanoquinodimethane), a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through the crystal. By applying the equivalent isotropic sample approach, we have demonstrated the importance of the choice of optimal geometry for accurate Hall effect measurements. Our results show, contrary to past belief, that the Hall coefficient does not depend on the geometry of measurements and that the Hall coefficient value is approximately zero in the high temperature region (T > 150 K), implying that there is no dominance of either the TTF or the TCNQ chain. At lower temperatures our measurements clearly prove that all three phase transitions of TTF-TCNQ could be identified from Hall effect measurements.     

The electrical properties and growth conditions of CdS crystals

Large crystals of cadmium sulphide have been grown in various partial pressures of cadmium and sulphur vapour. The concentration and ionisation energy of the shallow donors in the different crystals have been determined by measuring the Hall coefficient and electrical conductivity of semiconducting samples, and by comparing the magnitudes of the drift and Hall mobilities in photoconducting (semi-insulating) samples. The variation of the donor and acceptor content can be explained in broad terms in relation to the parameters of crystal growth. Hall measurements indicate that the ionisation energy of the shallow donors is 0·021 ± 0·002eV. The drift mobility experiment suggests that two shallow traps are present with energy depths of 0·015 and 0·037 eV. The variation of Hall mobility with temperature over the range 30–300°K can be explained in terms of polar optical mode, piezoelectric and ionised impurity scattering. The best value of effective mass obtained was 0·19m.     

Electrical properties of vapour grown ZrSe3 single crystals

Resistivity, Hall coefficient and thermoelectric power measurements of ZrSe₃ single crystals along the chain axis were carried out in the temperature range from 200 to 400 K. Experimental results are explained by the model of compensated semiconductors with two-dimensional characteristics. The activation energy of the donor level is determined to be 0.25 eV and the effective mass of the conduction band parallel to the layer is estimated to be 0.3m₀.     

Temperature dependent weak field Hall resistance in two-dimensional carrier systems

Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature-dependent 2D Hall coefficient shows striking nonmonotonicity in strongly screened systems, and, in particular, we qualitatively explain the recent puzzling experimental observation of a decreasing Hall resistance with increasing temperature in a dilute 2D hole system. We predict that the impurity scattering limited Hall coefficient will eventually increase with temperature at higher temperatures.     

Observation of general behaviour of Resonance Raman Spectra in the model system KBr(MnO-4)

Employing KBr(MnO^-₄) crystals as model specimens, the authors have observed for the first time the theoretically predicted peculiarities of the impurity resonance Raman scattering (RRS) resulting from excitation to a vibronic-structured absorption band, those peculiarities being the sharp irregularity of the RRS spectrum in case of excitation to Frank-Condon sublevel, the strong dependence of the spectrum on excitation frequency, the temperature dependences of the RRS line intensity which are significantly different for different orders of scattering. The observational data have been compared with calculations of cross-sections for multi-phonon RRS.     

Konzentration und Beweglichkeit von Elektronen in Zinkoxidkristallen mit Indium-Dotierung

The electrical conductivity and Hall effect of zinc oxide single crystals doped with indium has been measured from 5 to 300 K. Similar results to other semiconductors such as silicon and germanium are found. The temperature dependence of the measured quantities was discussed in terms of impurity band conduction and hopping conductivity.     

Electrical properties of n-type GaS single crystals

Hall effect and Thermally Stimulated Currents (TSC) measurements have been carried out with the current flowing perpendicular to the c-axis on n-GaS crystals grown both from the melt by the Bridgman-Stockbarger method and from the vapour by chemical transport with iodine. An impurity hopping conduction with an activation energy of 0.2 eV has been evidenced in the range of temperatures between 200 and 300 K. The results of TSC measurements indicate the iodine as being responsible for a donor level at 0.44 eV from the conduction band.     

Halleffekt-messungen an reinen und kupfer dotierten zinkoxidkristallen

The electrical conductivity and Hall effect of pure and copper doped crystals have been measured from 5 to 300 K. The results have been interpreted in terms of high compensation of the donors. Crystals heated in vacuum at 1500 K show impurity band conduction at low temperature. The behaviour of the crystals can be understood by means of oxygen vacancies occupied by one or by two electrons.