Ховый метод измерени я коэфициента отражния

, , . .

---

A new method of measuring the reflectivity factor

A new method is given of measuring reflectivity and compared with methods known up to now, which are characterized briefly. The applicability and suitability of the given method is shown on an example of measurement of the reflectivity of germanium in the ultra-violet and visible regions.

     

Perturbations of flows on Banach spaces and operator algebras

For automorphism groups of operator algebras we show how properties of the difference _t – ' _t are reflected in relations between the generators , . Indeed for a von Neumann algebraM with separable predual we show that if _t – '_t 0.28 for smallt, then = 0(+)°^-1 where is an inner automorphism ofM and is a bounded derivation ofM. If the difference _t – ' _t =O(t) ast ; 0, then = + and if _t – ' _t 0.28 for allt then =. We prove analogous results for unitary groups on a Hilbert space andC ₀,C ₀ ^* groups on a Banach space.This paper subsumes an earlier work of the same title which appeared as a report from Z.I.F. der Universität BielefeldWith partial support of the U.S. National Science Foundation     

Wavelength distribution of X-rays in the focus of a monochromator and an estimate of the influence of this distribution on precision measurements of lattice constants

Wavelength distribution in the focus of a Johansson type monochromator is computed assuming the tube focus emissivityG(), reflection curveR() and wavelength distribution of the incident radiationJ(-₀) are known. It is shown e.g. that the centre of gravity may be shifted in accordance with the position of the crystal on the focal circle which may considerably influence precision measurements of lattice parameters.

---

, G(,) R() J(-₀) . , , , .

---

---

The author is grateful to Z. Hemanová for carrying out all the computations very carefully.     

Hard gamma radiation in the decay of Lu176m

Gamma lines 1·05 MeV(4 × 10^–6 quanta/decay) and 1·14 MeV (9 × 10^–6 quanta/decay), giving evidence of the existence of a new level in Hf¹⁷⁶ with an energy of 1·14 MeV, were found in the decay of Lu^176m with a half-life of 3·7 hours, using the scintillation method. The component of the beta spectrum, exciting this level, has a maximum energy of 0·17 MeV and logft=8·3. The spin of this level proved to be equal to one. The level was interpreted as a single-particle neutron level withn ₀: 5/2^– (512),n ₁: 7/2^– (514);I=1⁺.

---

- Lu^176m

Lu^176m 3,7 - 1,05 MeV (4.10^–6 /) 1,14 MeV (9.10^–6 / /), Hf¹⁷⁶ 1,14 MeV. -, , 0,17 MeV logft = =8,3. . cn ₀: 5/2^– (512),n ₁: 7/2^– (514);I = 1⁺h

---

---

The authors thank L. K. Peker from the Leningrad State University for a helpful discussion of their results.     

Collisionless kinetic equations for massive particles with spins 1/2 and 0 in gravitational and electromagnetic fields

We define a covariant and gauge-invariant generalization of the Wigner functions of particles with spins 1/2 and 0. The collisionless kinetic equations are obtained for these particles in external gravitational and electromagnetic fields in the quasiclassical approximation; also obtained are the momentum representations of the energy-momentum tensor, current, and spin tensor, taking into account the effects of the spin's interaction with the gravitational field an electromagnetic field. The following notation is used: e and m are the charge and mass of the particles; is Planck's constant; (x) are the covariant-fixed Dirac matrices; ^,=(1/4)[, ]: a(^b)=(1/2) (a b +ab ); [A, B]=A·B – B·A; A,B=A·B+B·A; g(x)=det(g (x));R = –...; the speed of light c=1.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 47–53, September, 1990.The author wishes the thank Yu. G. Ignat'ev and members of the seminar in General Relativistic Statistics and Cosmology of the Kazan' Pedagogical Institute for useful discussions.     

Der Einfluss von Mikrosegregations-Substrukturen auf die Kritische Schubspannung und den Verfestigungskoeffizient von Zinkeinkristallen

Zusammenfassung Der Einflu\ von Mikrosegregations-Substrukturen auf das plastische Verhalten von Zinkeinkristallen entspricht den allgemeinen Erwartungen in der Weise, da\ die kritische Schubspannung mit wachsender Substrukturendichte zunimmt. Der Verfestigungskoeffizient _A nimmt hingegen mit wachsender Substrukturendichte ab. Dabei wird der Verfestigungskoeffizient vom Charakter der Substruktur viel empfindlicher beeinflu\t als die kritische Schubspannung. Es wird angenommen, da\ dieser Einflu\ durch unterschiedlichen Fremdstoffgehalt zustande kommt.

---

, . , _A . , . , .

---

---

Die Autoren danken Herrn Prof. M. Valouch, der die Durchführung dieser Arbeit ermöglicht hat. Herrn P. Kratochvíl sei an dieser Stelle für zahlreiche Diskussionen aufs herzlichste gedankt.     

The asymmetric contact process at its second critical value

The asymmetric contact process onZ has two distinct critical values ₁ > ₂ (at least with sufficient asymmetry). One can consider the process on {0,...,N} and analyze the time (which we call _N ) till complete vacany starting from complete occupation. Its behavior has already been resolved for all regions of except for =₂. For this value, Schinazi proved that lim _N log _N /logN=2 in probability and conjectured that _N /N ² converges in distribution. It is that result that we prove in this paper. We rely heavily on the Brownian motion behavior of the edge particle, which comes from Galves and Presutti and Kuczek.     

Estimate of foil thickness by stereomicroscopy technique

The determination of foil thickness by stereomicroscopy technique is discussed. The calculation of the foil thickness is performed in a general position of the foil in an electron microscope for a general choice of the marker position. In this case the crystallographic orientation of the foil normal has to be known. But there exists a special case (markers lie in the diffraction plane) where it is not necessary to know the orientation of the foil normal. The relative error in determining the foil thickness is about 10%.List of symbols B direction in the foil parallel with the primary beam in the first micrograph - d vector describing a common straight line of and ₁ ( ₁) - F direction in the foil parallel with the primary beam in the second micrograph - g diffraction vector - M magnification - n foil normal - o vector defined byn ×B - p ₁ first coordinate ofX in the first micrograph - p ₂ first coordinate ofX in the second micrograph - p _1i ,P _2i quantitiesP ₁,P ₂ corresponding to thei-th markers on the top surface - t _B foil thickness measured in theB direction - auxiliary quantity - corresponding to thei-th markers on the top surface - t _d foil thickness measured in thed direction - t _F foil thickness in general - t _n foil thickness measured in then direction - X ₁ point in _B characterizing one of the markers - X ₂ point in _T characterizing one of the markers - X _2i X ₂ corresponding to thei-th markers on the top surface - X _g magnitude ofX _g - X _gi magnitude ofX _gi - X magnitude ofX - X vector connecting pointX ₁ withX ₂ (X X ₂–X ₁ - X _g component ofX perpendicular to the plane ₁ - X _gi X _gi corresponding to thei-th markers on the top surface - X component ofX lying in the plane ₁ - z distance between _{1 T} and the end point ofX divided by cos Greek symbols angle between ₁ and _{1 B} - angle betweeng and _T - ₁, ₂ reflection planes - plane containingn andg - m measure error - p difference betweenp ₂ andp ₁ (p=p ₂–p ₁) - P accuracy of length measurement - (t _B )_max maximum error oft _B - maximum error of - accuracy of angle measurement - angle characterizing the deviation from the foil position when symmetrical tilting is achieved - angle of tilt betweenB andF (between stereomicrographs) - _T plane describing approximately the top surface of the foil - _b plane describing approximately the bottom surface of the foil - screen plane - angle between ₁ andX - plane containingn andB - angle of tilting from starting (after inserting the foil into the microscope) to working position (position during image observation) Special symbol intersection of two planes (common straight line)     

Feynman integral and complex classical trajectories

Let _t be an analytic solution of the Schrödinger equation with the initial condition . Let _t be the solution of the Schrödinger equation with the initial condition =, where is an analytic function. When 0, then _t (x) _t (x)¹ ( _t (x)), where _t (x) trajectory starting from x. We relate this result to Feynman's sum over trajectories and complex stochastic differential equations.     

The form factors of the decays π− → e−¯veγ and K− → e−¯veγ

In the special type of the quark model we obtain the ratio=h _A/h_V of the axial (h_A) and vector (h_V) form factors for the decays ^– e^– ¯v_e and K^– e^–¯v_e different from unity. The low-energy theorem, relating the electric polarizability of the charged pion with the ratio, is analyzed. It is shown that < 1 corresponds to , calculated by accounting the contribution of the scalar meson(700) into the amplitude of the Compton effect on the pion. In the absence of the(700) contribution we have=1.Dedicated to Academician Václav Votruba on the occasion of his eightieth birthday.     

The change in primary extinction during decomposition of a super saturated solid solution 1. System Al-Ag

On the basis of the correlation of diffraction data (intensity and width) of a precipitate with the intensity of reflection of a matrix solid solution it is shown that the change in primary extinction during the decomposition of a solid solution of Agin Alis caused by the precipitation of the phase Ag₂Aland not by the production of lattice defects (zones, stacking faults).

---

I. Al-Ag

( ) , Ag Al Ag₂Al, ( , ).

---

---

Reported in part at the VIth Scientific Technical Conference on the Application of X-rays held in Leningrad in 1958.

---

The author thanks M. Mikovský for preparing the single crystals of the alloy Al-Ag having a high primary extinction and J. Laek and Prof. J. Bedná for carefully checking their homogeneity and chemical composition.     

Measurement of the refractive index and optical absorption spectra of epitaxial bismuth substituted yttrium iron garnet films at uv to near-ir wavelengths

Refractive-index and optical-absorption spectra of Bi-substituted yttrium iron garnet films, epitaxially grown by liquid-phase epitaxy, have been measured in the spectral regime 0.26 m1.9 m by thin-film interference for 0.52 m and by ellipsometry for0.52 m. The Y_3–x–y Bi _x Pb _y Fe_5–z Pt _z O₁₂ films contain bismuth in the range Ox 1.42, lead in the range 0.01 y0.08 and platinum in the range 0.005<=z0.03. There is satisfactory coincidence between the results from ellipsometry and thin-film interference in the overlapping wavelength region. The materials investigated are the same as reported earlier from this laboratory in ter mof their magnetic and magnetooptic properties.     

Singular continuous spectrum on a cantor set of zero Lebesgue measure for the Fibonacci Hamiltonian

It is rigorously proven that the spectrum of the tight-binding Fibonacci Hamiltonian,H _mn= _{m, n+1}+ _{m, n–1}+ _{m, n} [(n+1)]–[n]) where =(5–1)/2 and [·] means integer part, is a Cantor set of zero Lebesgue measure for all real nonzero, and the spectral measures are purely singular continuous. This follows from a recent result by Kotani, coupled with the vanishing of the Lyapunov exponent in the spectrum.On leave from the Central Research Institute for Physics, Budapest, Hungary.     

Representation of fuzzy quantum posets of types I,II

Let (,M) be a fuzzy quantum poset of type I, II, or FQP of type I, II for short. For Boolean representations of fuzzy quantum spaces, by a representation of (,M) we mean a quantum logic (i.e., an orthocomplemented-orthocomplete orthomodular poset with a homomorphismh: such that for any states onM and any observable ¯X on there is a state ¯s on and observableX onM such that the following diagram commutes [where () is a Borel-algebra of the real line ]: We prove that a representation of FQP of type I always exists and a representation of FQP of type II exists in some cases.     

Some results for the exponential interaction in two or more dimensions

We show that for the regularized exponential interaction :e : ind space-time dimensions the Schwinger functions converge to the Schwinger functions for the free field ifd>2 for all or ifd=2 for all such that ||>₀.Partially sponsored by the I.H.E.S. through the Stiftung Volkswagenwerk     

On the measure of the spectrum for the almost Mathieu operator

We obtain partial results on the conjecture that for the almost Mathieu operator at irrational frequency, , the measure of the spectrum,S(, , )=|4–2|. For ||2 we show that if _n is rational and irrational, then .Dedicated to Res Jost and Arthur WightmanResearch partially supported by U.S. NSF grant number DMS-8801918 and by BSF under grant number 88-00325     

On the photo-electroluminescence of ZnS-Cu

The influence of weak ultra-violet irradiation on the brightness waves of electroluminescence is investigated for two types of ZnS-Cuphosphors. The observed effects (increase in brightness in the primary peak and its phase shift, the disappearance of the secondary peak) are explained on the basis of present-day conceptions on electroluminescence.

---

ZnS-Cu

ZnS-Cu. ( , ) .

     

Plasma oscillations and dynamical friction

The forceF of mutual interaction of two species of charged particles in relative motion with velocityU is, forU higher than the mean thermal velocities of particles, a decreasing function ofU. This property ofF(U) can give rise to the excitation of electrostatic oscillations.

---

F, copta , U, U, , , U. F(U) .

     

ЛОКАЛЬНЫЕ КОЛЕБАНлЯ ДВУХАТОМНОЙ ЛлНЕЙНО Й ЦЕПОЧКл С ДЕФЕКТАМл

. n : , . npou u , n . n n npocm .     

Bounded perturbations of dynamics

If and are one-parameter automorphism groups of a von Neumann algebraM is said to be a bounded perturbation of if _t – _t 0 ast0. We give a complete characterization of the bounded perturbations of . In particular, we show that if can be implemented by a strongly continuous one-parameter group with self-adjoint generator (Hamiltonian)H, then can be implemented in the same way and the corresponding HamiltonianH can be chosen to be of the formH=VHV ^–1+h, whereV is a unitary ofM andh=h*M.On leave of absence from II. Institut für Theoretische Physik, Universität Hamburg, D-2000 Hamburg 50, Federal Republic of Germany