High sensitivity Hall devices with AlSb/InAs quantum well structures

AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.     

高灵敏度InAs/AlSb量子阱的霍尔器件(英文)

用分子束外延在Ga As(001)衬底上生长了两个量子阱结构的霍尔器件,一个是没有掺杂的量子阱结构,一个是Si-δ掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明,在300 K下,Si-δ掺杂的量子阱结构的电子迁移率高达25 000 cm~2·V~(-1)·s~(-1),并且该器件输入电阻和输出电阻较低。同时,Si-δ掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。     

Growth of β-MnO2 films on TiO2(110) by oxygen plasma assisted molecular beam epitaxy

We have used oxygen plasma assisted MBE to grow epitaxial films of pyrolusite (β-MnO₂) on TiO₂(110) for thicknesses of one to six bilayers (BL). We define a bilayer to be a layer of Mn and lattice O and an adjacent layer of bridging O within the rutile structure. The resulting surfaces have been characterized in situ by reflection high-energy electron diffraction, low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and atomic force microscopy. Well-ordered, pseudomorphic overlayers form for substrate temperatures between 400 and 500°C. Mn–Ti intermixing occurs over the time scale of film growth (1 BL/min) for substrate temperatures in excess of 500°C. Films grown at 400–500°C exhibit island growth, whereas intermixed films grown at temperatures of 500–600°C are more laminar. 1 BL films grown at 450°C are more laminar than multilayer films grown at the same temperature, and form a well-ordered surface cation layer of Mn on the rutile structure with at most 10% indiffusion to the second cation layer.     

在a-平面蓝宝石衬底上分子束外延生长的ZnO和ZnMgO材料结构和光学性质(英文)

氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a plane的蓝宝石衬底生长了高质量的氧化锌外延材料。在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌。通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料。用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20O薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20O材料的吸收边的蓝移现象等。以上说明了我们用分子束外延生长 收稿日期:2003 07 22·09·　　第1期StructuralandOpticalCharacterizationofZnOandZnMgOFilmsona-planesapphiresbyMolecularBeamEpitaxy2004年设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料。     

Mössbauer-Effect Study of Metastable c-FeSi Synthesized by Molecular Beam Epitaxy (MBE) and by Ion Implantation

Conversion electron Mössbauer spectroscopy (CEMS) has been applied to the study of the metastable c-FeSi phase (i.e. an iron silicide with CsCl lattice structure) that was synthesized by implantation of Si + ions of 50 keV in energy into f -Fe (95% 57 Fe) near room temperature with a nominal dose of 5 2 10 17 cm m 2 , and by molecular beam epitaxy (MBE). Iron silicide layers with different stoichiometry (FeSi 0.85 , FeSi, Fe 0.85 Si) were grown by codeposition of 57 Fe and Si onto an Fe buffer layer on MgO(100). For all FeSi layers the defective CsCl structure was observed after annealing at different temperatures. X-ray diffraction measurements were performed to determine the structure and epitaxial relationship of the c-FeSi films. The lattice parameter perpendicular to the film plane was found to be 2.77(5) Å. CEMS measurements revealed a lower than cubic site symmetry of the iron atoms for both the c-FeSi layers synthesized by ion implantation and by MBE. The formation of nearly undistorted c-FeSi after annealing is favored by excess Fe atoms in the deposited film.     

Molecular beam epitaxy of GaSb on ZnTe/GaAs: Influence of the chemical composition of ZnTe surface

We have studied the molecular beam epitaxy (MBE) of GaSb films on GaAs (0 0 1) substrates by using ZnTe as a new buffer layer. GaSb films were grown on two distinct ZnTe surfaces and the influence of surface chemical composition of ZnTe on the morphological and structural properties of GaSb films has been investigated. Initial 2-dimensional (2D) growth of GaSb films is obtained on Zn-terminated surface consequently smooth morphology and high crystal quality GaSb films are achieved. The thin GaSb film (0.4 μm) grown on Zn-terminated ZnTe surface reveals considerably narrow X-ray diffraction linewidth (113 arcsec) along with small residual strain, which strongly supports the availability of ZnTe buffer for the growth of high-quality GaSb film.     

Enhanced strain relaxation induced by epitaxial layer growth mode of MgO thin films

Growth of MgO films on silicon substrate was conducted by KrF excimer pulsed-laser ablation system. Two kinds of growth mode were revealed in situ by reflection high energy electron diffraction. It was found that the layer growth mode of MgO thin films could remarkably reduce the misfit strain originated from the different lattice constant and thermal expansion coefficiency between MgO films and Si. An enhanced strain relaxation was discovered for MgO films, which were grown with the layer growth mode, in the film thickness range of 40-100 nm. The value of critical thickness for the formation of misfit dislocation agrees well with the calculated one. This exceptional phenomenon should be ascribed to the layer growth mode of epitaxial MgO films.     

高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长

理论预言窄禁带稀磁半导体(Ga,Mn)Sb及其异质结构可能存在量子反常霍尔效应等新奇特性, 近年来受到了特别关注. 但是, 由于(Ga,Mn)Sb薄膜生长窗口窄, 纯相(Ga,Mn)Sb薄膜制备比较困难, 迄今关于这类材料的研究报道为数不多. 本文采用低温分子束外延的方法, 通过优化生长条件, 成功制备出厚度为10 nm, Mn含量在0.016至0.039之间的多组(Ga,Mn)Sb薄膜样品. 生长过程中反射式高能电子衍射原位监测和磁性测量都表明没有MnSb等杂相的偏析, 同时原子力显微镜图像表明其表面形貌平滑, 粗糙度小. 通过生长后退火处理, (Ga,Mn)Sb薄膜的最高居里温度达到30 K. 此外, 本文研究了霍尔电阻和薄膜电阻随磁场的变化关系, 在低温下观测到明显的反常霍尔效应.     

Spin-resolved photoelectron spectroscopy of the MgO/Fe(110) system

The surface structure and electronic properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and spin-resolved photoelectron spectroscopy. The spin polarization at the Fermi level (E_F) of the Fe(110) film decreases sharply with increasing thickness of the MgO layer. This behavior arises from the formation of a thin FeO layer at the MgO(111)/Fe(110) interface, as revealed by structural and spectroscopic investigations. The strong attenuation of the intrinsic spin polarization is qualitatively attributed to the scattering of spin-polarized electrons at the unoccupied d-orbitals of Fe²⁺. PACS 68.35.-p; 68.55.-a; 73.20.r; 75.70.Cn; 79.60.-I     

太阳电池用Cu2ZnSnS4薄膜的反应溅射原位生长及表征

通过直流反应磁控溅射技术,原位生长制备了太阳电池用Cu₂ZnSnS₄(CZTS)薄膜.采用X射线能量色散谱仪、扫描电镜、X射线衍射仪、紫外可见分光光度计和霍尔效应测试系统对薄膜进行了表征.结果表明,原位生长的CZTS薄膜具有均质、致密和平整的形貌,且由贯穿整个薄膜厚度的柱状颗粒组成.不同基底温度下生长所得薄膜的Cu/(Zn+Sn) 值均约为1,而Zn/Sn值均大于1且随着基底温度升高而减小.所得薄膜在(112)方向上择优取向明显,且结构特征受基底温度和Cu/(Zn+Sn)的共同影响.所得薄膜均具有高达10⁴cm^-1的光吸收系数,其带隙宽度随着生长温度的增加而降低,并且在500℃时为(1.51±0.01)eV.薄膜的导电类型均为p型,且具有与器件级Cu(In,Ga)Se₂(CIGS)相当的载流子浓度. 关键词： 2ZnSnS₄')" href="#">Cu₂ZnSnS₄ 直流反应磁控溅射 原位生长 太阳电池     

Growth of manganese silicide films by co-deposition of Mn and Si on Si(1 1 1): A spectroscopic and morphological investigation

MnSi is a ferromagnetic compound with a Curie temperature of 29 K. Recent theoretical studies predict that 2 ML of MnSi epitaxially grown on Si show a ferromagnetic metallic ground state with spin polarization of about 50%. This would allow the development of spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor.In this context the possibility of growing in situ MnSi on the Si(1 1 1) surface has been explored. Thermal reaction, crystalline structure and electronic properties of the grown films have been studied in situ by photoemission spectroscopy (PES), X-ray absorption spectroscopy (XAS), and low energy electron diffraction (LEED). Depositing a thin film of Mn on Si(1 1 1) the formation of ordered islands (with dimensions dependent on the amount of deposited Mn) is driven by annealing at selected temperatures, as already observed. Our preliminary studies show that by simultaneously depositing Mn and Si in 1:1 stoichiometry on Si(1 1 1) a large improvement in the homogeneity of the MnSi films is achieved.     

Moiré superlattice modulations in single-unit-cell FeTe films grown on NbSe2 single crystals

Interface can be a fertile ground for exotic quantum states, including topological superconductivity, Majorana mode, fractal quantum Hall effect, unconventional superconductivity, Mott insulator, etc. Here we grow single-unit-cell (1UC) FeTe film on NbSe₂ single crystal by molecular beam epitaxy (MBE) and investigate the film in-situ with a home-made cryogenic scanning tunneling microscopy (STM) and non-contact atomic force microscopy (AFM) combined system. We find different stripe-like superlattice modulations on grown FeTe film with different misorientation angles with respect to NbSe₂ substrate. We show that these stripe-like superlattice modulations can be understood as moiré pattern forming between FeTe film and NbSe₂ substrate. Our results indicate that the interface between FeTe and NbSe₂ is atomically sharp. By STM-AFM combined measurement, we suggest that the moiré superlattice modulations have an electronic origin when the misorientation angle is relatively small (≤ 3°) and have structural relaxation when the misorientation angle is relatively large (≥ 10°).     

衬底温度对ZnO薄膜的结构和光学特性的影响

利用等离子体辅助分子束外延(P-MBE)设备在蓝宝石衬底上通过改变生长温度,制备了不同的ZnO样品.研究了衬底温度对ZnO的结构、光学和电学性质的影响.样品的晶体结构利用X射线衍射谱进行表征.X射线衍射谱表明,所有的ZnO样品都是(002)取向的六角纤锌矿结构.随着生长温度的升高,X射线的(002)衍射峰的半峰全宽逐渐...     

分子束外延生长Sb薄膜及其量子尺寸效应

在GaAs(001)衬底上，用分子束外延生长Sb(111)薄膜，用反射式高能电子衍射仪原位监控生长过程，用透射电子显微镜观察薄膜结构，并用van der Pauw方法测量了电阻率随生长温度的变化，观察到Sb薄膜半金属/半导体转变及其量子尺寸效应． 关键词：     

RHEED observation of BaTiO3 thin films grown by MBE

Ferroelectric BaTiO₃ thin films with a thickness of 10 monolayers (ML) were epitaxially grown on SrTiO₃(0 0 1) substrates by very slow deposition using molecular beam epitaxy (MBE). The investigations were carried out by two growth methods: (i) codeposition and (ii) alternate deposition of the metal elements in an oxygen atmosphere. In situ observation of reflection high-energy electron diffraction confirmed that an epitaxial cube-on-cube structure was prepared. After the deposition, X-ray diffraction measurements were carried out. The 10-ML-thick BaTiO₃ films were highly c-axis oriented single crystals with good film quality.     

分子束外延生长[111]晶向CdTe的研究

本文采用分子束外延(MBE)方法在BaF₂衬底上直接外延生长了CdTe(111)薄膜. 反射高能电子衍射(RHEED)实时监控生长表面, 衍射图样揭示了CdTe(111)在BaF₂表面由二维生长向三维生长的变化过程．XRD表征验证了外延生长的CdTe薄膜的单晶性质．由红外透射光谱测量和理论拟合相结合, 得到了CdTe外延薄膜室温带隙宽度E_g=1.511 eV.     

Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films

We have investigated on the molecular beam epitaxy (MBE) of Te-doped GaSb films on ZnTe buffer. Te-doped GaSb (GaSb:Te) films with and without ZnTe buffer were grown on (0 0 1) GaAs substrates. GaSb:Te/ZnTe/GaAs film revealed higher mobility (=631 cm²/V s) in comparison to GaSb:Te/GaAs film (=249 cm²/V s). To explain the higher mobility of GaSb:Te on ZnTe buffer, dislocation density and temperature dependence of Hall measurement results were analyzed. Temperature dependence of Hall measurement shows strong influence of the dislocation scattering, which indicates that dislocation reduction by the ZnTe buffer enhances the carrier mobility of GaSb films.     

Gated spin relaxation in (1 1 0)-oriented quantum wells

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE growth of good-quality quantum wells, judged by the width of low-temperature excitonic photoluminescence. At 170 K the electron spin relaxation rate in (1 1 0)-oriented wells shows a 100-fold reduction compared to equivalent (1 0 0)-oriented wells and also a 10-fold increase with applied electric field from 20 to 80 kV cm⁻¹. There is evidence for similar dramatic effects at 300 K. Spin relaxation is field independent below 20 kV cm⁻¹ reflecting quantum well asymmetry. The results indicate the achievability of voltage-gateable quantum well spin memory time longer than 10 ns at room temperature simultaneously with high electron mobility.     

Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb

We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 × 4 GaBi honeycomb. The QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains ( ∼ 4%) and supports a gap as large as 112 meV at 2.21% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.     

Ce 基重费米子材料的电子态研究与维度调控

重费米子材料作为一类典型的强关联电子体系,蕴含着非常规超导、奇异金属、量子临界、 磁有序、重电子态、关联拓扑态等新奇的量子态,而4f 电子在其中扮演着重要的作用。随着高分 辨角分辨光电子能谱和薄膜生长技术的发展,精确探测重费米子材料中4f 电子在能量/动量空间 的色散和谱权重成为了可能,这为从微观上理解这类材料中的电子关联效应和新奇量子现象提供 了重要的基础。本论文总结了几个典型的重费米子单晶和薄膜体系的电子态研究,包括Ce-115 体 系、CeCu2Si2、CeRh6Ge4 以及单晶 Ce 膜等。这些结果为理解重费米子体系中重电子态的形成 和温度演化、近藤杂化的能带/动量依赖、重电子能带与超导的关系、近藤效应与磁性和其它量子 态的竞争、4f 电子的维度调控等重要物理问题提供了谱学证据。