Electronic structures and magnetic properties of CrSiTe3 single-layer nanoribbons

One-dimensional nanoribbons usually exhibit considerably different properties compared to their monolayer counterparts due to the formation of edge states and limited width. In this study, we systematically investigate the stability, electronic structures and magnetic properties of CrSiTe₃ single-layer nanoribbons with different edge configurations and ribbon widths using first-principles calculations. The results show that the edge energies (less than 0.4 eV/Å) for all studied CrSiTe₃ nanoribbons are much lower than that of graphene and many transition-metal dichalcogenide nanoribbons, indicating their stability and easy formation. Compared to the CrSiTe₃ monolayer with ferromagnetic semiconductor characteristics, some of CrSiTe₃ nanoribbons (N-SiCr-ZNRs, N-Te-ZNRs, N-TeCr-ANRs and N-Te-ANRs) become half-metal due to the hybridization between the d orbitals of edge Cr atoms and the p orbitals of edge Te atoms. While N-SiTe-ANRs are bipolar magnetic semiconductors, in which the states near Fermi level are localized around the nanoribbons edge. Our results show that CrSiTe₃ single-layer nanoribbons are promising candidates suitable for applications in spintronic devices.     

Electronic and magnetic properties of graphene nanoribbons

Molecular orbital calculations of the electronic properties of graphene nanoribbons as a function of length in the nanometre range show a pronounced decrease in the band gap and ionization potential with increasing length. It is shown that length can be used to design the materials to be insulating, semiconducting or metallic. A low ionization potential (work function), less than single walled carbon nanotubes, is obtained at the longest length of the calculation (2.3?nm). This latter result suggests the possibility of using graphene nanoribbons as electric field induced electron emitters. Calculations on boron and nitrogen doped carbon nanoribbons indicate that the triplet state is more stable than the singlet state.     

Vanadium sulfide nanoribbons: Electronic and magnetic properties

We report the structural, electronic and magnetic properties of zigzag-type 2H-VS₂ nanoribbons based on the first-principles calculations. Our results suggest that the zigzag-type 2H-VS₂ nanoribbons are intrinsic ferromagnetic or ferrimagnetic materials dependent on their edge structures. The S-terminated VS₂ nanoribbons with or without hydrogen saturation at the edges are ferromagnetic, whereas V-terminated VS₂ nanoribbons are ferrimagnetic at their ground states. The average magnetic moment per V atom of VS₂ nanoribbons increases monotonously with their width, but still smaller than that of perfect VS₂ monolayer. These results imply the great potential of VS₂ nanoribbons in spintronics application.     

Electronic transport properties of junctions between carbon nanotubes and graphene nanoribbons

Using the tight-binding model and Green’s function method, we studied the electronic transport of four kinds of nanotube-graphene junctions. The results show the transport properties depend on both types of the carbon nanotube and graphene nanoribbon, metal or semiconducting. Moreover, the defect at the nanotube-graphene interface did not affect the conductance of the whole system at the Fermi level. In the double junction of nanotube/nanoribbon/nanotube, quasibound states are found, which cause antiresonance and result in conductance dips.     

Electronic and magnetic properties of pristine and hydrogenated borophene nanoribbons

The groundbreaking works in graphene and graphene nanoribbons (GNRs) over the past decade, and the very recent discovery of borophene naturally draw attention to the yet-to-be-explored borophene nanoribbons (BNRs). We herein report a density functional theory (DFT) study of the electronic and magnetic properties of BNRs. The foci are the impact of orientation (denoted as BxNRs and ByNRs with their respective periodic orientations along x- and y-axis), ribbon width (N_x, N_y=4–15), and hydrogenation effects on the geometric, electronic and magnetic properties of BNRs. We found that the anisotropic quasi-planar geometric structure of BNR and the edge states largely govern its electronic and magnetic properties. In particular, pristine ByNRs adopt a magnetic ground state, either anti-ferromagnetic (AFM) or ferromagnetic (FM) depending on the ribbon width, while pristine BxNRs are non-magnetic (NM). Upon hydrogenation, all BNRs exhibit NM. Interestingly, both pristine and hydrogenated ByNRs undergo a metal-semiconductor-metal transition at N_y=7, while all BxNRs remain metallic.     

Electronic and magnetic properties of SiC nanoribbons by F termination

By using the first-principles calculations, the electronic properties are studied for the F-terminated SiC nanoribbons (SiCNRs) with either zigzag edges (ZSiCNRs) or armchair edges (ASiCNRs). The results show that the broader F-terminated ZSiCNRs are metallic and the edge states appear at the Fermi level, while the F-terminated ASiCNRs are always semiconductors independent of their width but the edge states do not appear due to the Si-C dimer bonds at the edges. The charge density contours analyses shows that the Si-F and Si-C bonds are all ionic bonds due to the much stronger electronegativities of the F and C atoms than that of the Si atom. However, the C-F bonds display a typical non-polar covalent bonding feature because of the electronegativity difference between the F and C atoms of 1.5 is a much smaller than that of between the F and Si atoms of 2.2, as well as the tighter bounded C 2s ²2p ² electrons with smaller orbital radius than the Si 3s ²3p ² electrons. For both the F- and the H-terminated ZSiCNRs, the ground state is a ferromagnetic semiconductor.     

Electronic and magnetic properties of zigzag edge graphene nanoribbons with Stone-Wales defects

The electronic and magnetic properties of zigzag graphene nanoribbons (ZGNRs) with Stone-Wales defects are studied by extensive first-principles calculations. It is shown that the asymmetry distribution of the Stone-Wales defects can induce finite magnetic moment in the defective ZGNRs. As the defect near one of the ribbon edges moving to the centre region, the magnetic moment of the defective ZGNRs gradually decreases to zero, following a transition from metal to semi-half-metal and eventually to semiconductor. In addition, by symmetrically placing an additional defect at the opposite side of the defective ZGNRs, the finite magnetic moment vanishes, and the electronic properties depend on the distance between the defect and the closer ribbon edge. These findings are robust within a wide range of defect concentration.     

Electronic properties of phosphorene and graphene nanoribbons with edge vacancies in magnetic field

The graphene and phosphorene nanostructures have a big potential application in a large area of today's research in physics. However, their methods of synthesis still don't allow the production of perfect materials with an intact molecular structure. In this paper, the occurrence of atomic vacancies was considered in the edge structure of the zigzag phosphorene and graphene nanoribbons. For different concentrations of these edge vacancies, their influence on the metallic properties was investigated. The calculations were performed for different sizes of the unit cell. Furthermore, for a smaller size, the influence of a uniform magnetic field was added.     

Electronic and magnetic properties of copper-family-element atom adsorbed graphene nanoribbons with zigzag edges

We have investigated the electronic and magnetic properties of copper-family-element (CFE) atom adsorbed graphene nanoribbons (GNRs) with zigzag edges using first-principles calculations based on density functional theory. We found that CFE atoms energetically prefer to be adsorbed at the edges of nanoribbons. Charges are transferred between the CFE atom and carbon atoms at the edge, which reduce the local magnetic moment of carbon atoms in the vicinity of adsorption site and change the electronic structure of GNRs. As a result, Cu adsorbed zigzag GNR is a semiconductor with energy band gap of 0.88 eV in beta-spin and energy gap of 0.22 eV in alpha-spin, while Ag adsorbed zigzag GNR and Au adsorbed zigzag GNR are both half-metallic with the energy gaps of 0.68 eV and 0.63 eV in beta-spin, respectively. These results show that CFE atom adsorbed zigzag GNRs can be applied in nanoelectronics and spintronics.     

Electronic properties of bearded graphene nanoribbons

We investigate the electronic properties of graphene nanoribbons with attachment of bearded bonds as a model of edge modification. The main effect of the addition of the beards is the appearance of additional energy subbands. The originally gapless armchair graphene nanoribbons become semiconducting. On the other hand, the originally semiconducting armchair graphene nanoribbons may or may not change to gapless systems depending on the width. With the inclusion of a transverse electric field, the band structures of bearded graphene nanoribbons are further altered. An electric field creates additional band-edge states, and changes the subband curvatures and spacings. Furthermore, the energy band symmetry about the chemical potential is lifted by the field. With varying width, the bandgap demonstrates a declining zigzag behavior, and touches the zero value regularly. Modifications in the electronic structure are reflected in the density of states. The numbers and energies of the density of state divergent peaks are found to be strongly dependent on the geometry and the electric field strength. The beard also causes electron transfer among different atoms, and alters the probability distributions. In addition, the electron transfers are modified by the electric field. Finally, the field introduces more zero values in the probability distributions, and removes their left–right symmetry.     

Electronic thermal conductivity of armchair graphene nanoribbons and zigzag carbon nanotubes

Through the Green's function formalism and tight-binding Hamiltonian model calculations, the temperature dependent electronic thermal conductivity (TC) for different diameters of zigzag carbon nanotubes and their corresponding unzipped armchair graphene nanoribbons is calculated. All functional temperature dependencies bear crossovers, for which, at higher temperatures, nanotubes have a slightly higher TC than their derived nanoribbons, while below that crossover, both systems exhibit a significant coincidence over a moderate range of lower temperatures. Noticeably, TC decreases with increasing the width or diameter of the corresponding systems. Also, at low temperatures TC is proportional to the density of states around the Fermi level, and thus increasing for metal or semiconductors of narrower gap cases.     

Electronic and transport properties of boron-doped graphene nanoribbons

We report a spin polarized density functional theory study of the electronic and transport properties of graphene nanoribbons doped with boron atoms. We considered hydrogen terminated graphene (nano)ribbons with width up to 3.2 nm. The substitutional boron atoms at the nanoribbon edges (sites of lower energy) suppress the metallic bands near the Fermi level, giving rise to a semiconducting system. These substitutional boron atoms act as scattering centers for the electronic transport along the nanoribbons. We find that the electronic scattering process is spin-anisotropic; namely, the spin-down (up) transmittance channels are weakly (strongly) reduced by the presence of boron atoms. Such anisotropic character can be controlled by the width of the nanoribbon; thus, the spin-up and spin-down transmittance can be tuned along the boron-doped nanoribbons.     

Electronic properties of Li-doped zigzag graphene nanoribbons

Zigzag graphene nanoribbons (ZGNRs) are known to exhibit metallic behavior. Depending on structural properties such as edge status, doping and width of nanoribbons, the electronic properties of these structures may vary. In this study, changes in electronic properties of crystal by doping Lithium (Li) atom to ZGNR structure are analyzed. In spin polarized calculations are made using Density Functional Theory (DFT) with generalized gradient approximation (GGA) as exchange correlation. As a result of calculations, it has been determined that Li atom affects electronic properties of ZGNR structure significantly. It is observed that ZGNR structure exhibiting metallic behavior in pure state shows half-metal and semiconductor behavior with Li atom.     

Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes

The electronic structure and magnetic properties of the transition-metal(TM) atoms(Sc–Zn, Pt and Au) doped zigzag GaN single-walled nanotubes(NTs) are investigated using first-principles spin-polarized density functional calculations. Our results show that the bindings of all TM atoms are stable with the binding energy in the range of 6–16 eV. The Sc- and V-doped GaN NTs exhibit a nonmagnetic behavior. The GaN NTs doped with Ti, Mn, Ni, Cu and Pt are antiferromagnetic. On the contrary, the Cr-, Fe-, Co-, Zn- and Au-doped GaN NTs show the ferromagnetic characteristics. The Mn- and Codoped GaN NTs induce the largest local moment of 4μB among these TM atoms. The local magnetic moment is dominated by the contribution from the substitutional TM atom and the N atoms bonded with it.     

Electronic and magnetic properties of single-wall GeC nanotubes filled with iron nanowires

Under GGA, the structural, electronic and magnetic properties of single-wall (8, 8) GeC nanotubes filled with iron Fe_n nanowires (n = 5, 9, 13 and 21) have been investigated systematically using the first-principles PAW potential within DFT. We find that the initial shapes of the Fe₅@(8, 8), Fe₉@(8, 8) and Fe₁₃@(8, 8) systems are preserved without any visible changes after optimization. But for the Fe₂₁@(8, 8) system, the initial shapes are distorted largely for both nanowire and nanotube. The binding processes of Fe_n@(8, 8) systems are exothermic, and Fe₅@(8, 8) system is the most stable structure. The pristine (8, 8) GeCNT is nonmagnetic and direct semiconductor with a wide band gap of about 2.65 eV. Projected densities of states onto different shell Fe atoms show that the separation between the bonding and antibonding d states is reduced as going from the core Fe atom to the outermost shell Fe atom. The spin polarization of the Fe_n@(8, 8) systems and free-standing nanowires are higher than that in bulk Fe. And the spin polarization generally decreases with the number n of the Fe atoms increasing for both the Fe_n@(8, 8) systems and free-standing nanowires. Both the largest spin polarization value itself and not more decrease with respect to value of free-standing Fe₅ nanowire suggest the Fe₅@(8, 8) system could be of interest for the use in electron spin injection. The magnetism is mainly confined within the inner Fe nanowire for these combined systems. More importantly, the Fe₅ nanowire encapsulated inside (8, 8) GeCNT is under the protection of the GeCNT to prevent from oxidation, thus may stably exist in atmosphere for long time and can be expected to have potential applications in building nanodevices.     

Electronic properties of MoS2 nanoribbons with disorder effects

A theoretical study of electronic properties on MoS₂ nanoribbon is made on focusing the calculation of zero bias transport in the presence of disorders. Disorders including intrinsic and extrinsic vacancies and also weak uniform scatter defects are considered. The calculations are based on the tight-binding Green's function formalism by including an iterative procedure. The Slater–Koster transformations are used to determine the parameters. This model reduces the numerical calculation time. The unsaturated atoms at the edge of armchair (zigzag) ribbon induce some mid-gap states with nearly high (low) localization, which act as scattering centers. The antiresonances of created quasi-localized states due to vacancy cause the conductance of the armchair nanoribbon to decrease. Finally, the zigzag ribbon provides the highest sensitivity as well as selectivity between the smaller energy range, in the presence of the single weak scatter with potential value of 2 eV at the edge of the ribbon.     

后钙钛矿CaRhO3的电子结构和磁学性质的第一性原理研究

采用基于密度泛函理论的投影平面波方法,对后钙钛矿结构(Ppv)的CaRhO₃的电子结构和磁学性质进行了研究.广义梯度(GGA)近似下的计算表明,Ppv-CaRhO₃的基态为铁磁性半金属,Rh⁴⁺离子的磁矩大小为0.57μ_B,具有低自旋态构型;而考虑在位库仑作用修正的GGA+U计算,得到了与实验结果相符的反铁磁绝缘体基态,表明后钙钛矿结构中4d电子之间的关联效应对体 关键词： 电子结构 磁学性质 金属绝缘体转变     

Electronic transport properties on V-shaped-notched zigzag graphene nanoribbons junctions

Using nonequilibrium Green?s functions in combination with the density functional theory, the spin-dependent electronic transport properties on V-shaped notched zigzag-edged graphene nanoribbons junctions have been calculated. The results show that the electronic transport properties are strongly depending on the type of notch and the symmetry of ribbon. The spin-filter phenomenon and negative differential resistance behaviors can be observed. A physical analysis of these results is given.     

Electronic and transport properties of V-shaped defect zigzag MoS_2 nanoribbons

Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.     

BN链掺杂的石墨烯纳米带的电学及磁学特性

基于密度泛函理论第一性原理系统研究了BN链掺杂石墨烯纳米带(GNRs)的电学及磁学特性, 对锯齿型石墨烯纳米带(ZGNRs)分非磁态(NM)、反铁磁态(AFM)及铁磁性(FM)三种情况分别进行考虑. 重点研究了单个BN链掺杂的位置效应. 计算发现: BN链掺杂扶手椅型石墨烯纳米带(AGNRs) 能使带隙增加, 不同位置的掺杂, 能使其成为带隙丰富的半导体. BN链掺杂非磁态ZGNR的不同位置, 其金属性均降低, 并能出现准金属的情况; BN链掺杂反铁磁态ZGNR, 能使其从半导体变为金属或半金属(half-metal), 这取决于掺杂的位置; BN链掺杂铁磁态ZGNR, 其金属性保持不变, 与掺杂位置无关. 这些结果表明: BN链掺杂能有效调控石墨烯纳米带的电子结构, 并形成丰富的电学及磁学特性, 这对于发展各种类型的石墨烯基纳米电子器件有重要意义. 关键词： 石墨烯纳米带 BN链掺杂 输运性质 自旋极化