A novel two-dimensional SiO sheet with high-stability,strain tunable electronic structure,and excellent mechanical properties

Using the structure search of particle swarm optimization(PSO) algorithm combined with density functional theory(DFT), we conduct a systematic two-dimensional(2D) material research on the SiO and discover a P2 monolayer structure.The phonon spectrum shows that the 2D P2 is dynamic-stable under ambient pressure. Molecular dynamics simulations show that 2D P2 can still exist stably at a high temperature of 1000 K, indicating that 2D P2 has application potential in high-temperature environments. The intrinsic 2D P2 structure has a quasi-direct band gap of 3.2 e V. The 2D P2 structure can be transformed into a direct band gap semiconductor by appropriate strain, and the band gap can be adjusted to the ideal band gap of 1.2 e V–1.6 e V for photovoltaic materials. These unique properties of the 2D P2 structure make it expected to have potential applications in nanomechanics and nanoelectronics.     

The mechanical flexibility,electronic structure and carrier mobility of monolayer GeP: A first principles study

Inspired by successful exfoliation in experiment, we explore mechanical, electronic and transport properties of GeP monolayer using first-principles calculations. It is found that the cleavage energy of GeP monolayer is ∼0.39 J/m², verifying it can be feasibly extracted from its bulk form. The calculated stress-strain relation reveals that monolayer GeP can withstand a tensile stress and strain up to 14.88 GPa and 28%, respectively. The band structure calculations indicate the monolayer GeP possesses an indirect band gap ∼2.28 eV, which can be reduced to 0.43 eV and experiences an indirect-direct transition when axial strain is applied. Besides, the effective masses can be dramatically tuned by strain. The predicted carrier mobilities of GeP monolayer are directionally anisotropic and the electron mobility in x direction exhibits high carrier mobility up to 1242.09 cm² V⁻¹ S⁻¹. Therefore, GeP monolayer has great potential for applications in high performance flexible field-effect transistors and optoelectronic devices.     

Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film

Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge is 95 ± 14 meV below E(F). Theory agrees well with the valence band measurements, and shows an incomplete gap at E(F) due to the hole band at M shifting almost below E(F).     

掺杂BaHfO3电子结构与力学性能的第一性原理研究

在广义梯度近似(GGA)下,采用基于密度泛函理论的第一性原理方法研究了掺杂对BaHfO3的电子结构与力学性能的影响.电子结构计算表明:优化的BaHfO3晶格常数与实验值吻合较好,BaHfO3为一种间接带隙的绝缘体材料.掺杂Sr和Ti后该材料仍为间接带隙材料,Ba0.5Sr0.5HfO3的带隙增大,绝缘体特征增强,而BaHf0.5Ti0.5O3的带隙显著减小,呈现出半导体材料的特征.由态密度分析可知,掺杂后带隙的变化主要是由于导带底的移动造成的.力学性能分析表明:与BaHfO3相比,Ba0.5 Sr0.5 HfO3的剪切模量和杨氏模量均明显减小,材料硬度减弱;BaHf0.5Ti0.5O3的剪切模量及杨氏模量均明显增大,材料硬度增强.电子密度分布分析揭示了掺杂改变体系价电子浓度的分布情况,使BaHfO3的价健特性发生了变化,这是材料硬度改变的内在原因.可见,掺杂能够有效地调控体系的硬度,该研究结果为掺杂BaHfO3力电材料的设计与应用提供了理论依据.     

掺杂BaHfO3电子结构与力学性能的第一性原理研究

在广义梯度近似（GGA）下,采用基于密度泛函理论的第一性原理方法研究了掺杂对BaHfO3的电子结构与力学性能的影响．电子结构计算表明：优化的BaHfO3晶格常数与实验值吻合较好,BaHfO3为一种间接带隙的绝缘体材料．掺杂Sr和Ti后该材料仍为间接带隙材料,Ba0.5Sr0.5HfO3的带隙增大,绝缘体特征增强,而BaHf0.5Ti0.5O3的带隙显著减小,呈现出半导体材料的特征．由态密度分析可知,掺杂后带隙的变化主要是由于导带底的移动造成的．力学性能分析表明：与BaHfO3相比,Ba0.5Sr0.5HfO3的剪切模量和杨氏模量均明显减小,材料硬度减弱;BaHf0.5Ti0.5O3的剪切模量及杨氏模量均明显增大,材料硬度增强．电子密度分布分析揭示了掺杂改变体系价电子浓度的分布情况,使BaHfO3的价健特性发生了变化,这是材料硬度改变的内在原因．可见,掺杂能够有效地调控体系的硬度,该研究结果为掺杂BaHfO3力电材料的设计与应用提供了理论依据．     

Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene, we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap Δ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential Δ(cr), separating the insulating regime from a percolative regime in which less than half of the area of the bilayer graphene sample is insulating. We find that most of the current experiments are in the percolative regime with Δ(cr)?Δ. The huge suppression of Δ(cr) compared with Δ provides a possible explanation for the large difference between the theoretical band gap Δ and the experimentally extracted transport gap.     

贵金属氮化物晶体结构、电子结构和力学性能的实验与理论研究进展

氮化铂（Pt-N）是高温高压条件下合成的第一种块体二元贵金属氮化物,由于该化合物具有高的体弹性模量和特殊的电子结构从而吸引了世界范围内一些理论研究者的目光.Pt-N中金属原子的质量远远大于非金属原子的质量,因此X射线衍射仅能确定Pt原子的位置,拉曼光谱虽然能限制N原子的对称性,但仍不能确定其具体位置.以上因素使得确定这种新合成物质的晶体结构成了理论研究的焦点, 这些工作已经在高压科学中开拓了一个新的领域,即贵金属元素氮化物的高压合成与物性研究.     

Cluster model electronic structure calculations for the ideal and hydrogen chemisorbed Si (100) surfaces

The electronic structure of the ideal and hydrogen chemisorbed Si(100) surfaces is calculated using the self-consistent scattered-wave cluster model. The results are presented for total and local density of states. These are compared with experiments and other calculations, where available.     

贵金属氮化物晶体结构、电子结构和力学性能的实验与理论研究进展

氮化铂（Pt-N）是高温高压条件下合成的第一种块体二元贵金属氮化物，由于该化合物具有高的体弹性模量和特殊的电子结构从而吸引了世界范围内一些理论研究者的目光．Pt-N中金属原子的质量远远大于非金属原子的质量，因此X射线衍射仅能确定Pt原子的位置，拉曼光谱虽然能限制N原子的对称性，但仍不能确定其具体位置．以上因素使得确定这种新合成物质的晶体结构成了理论研究的焦点，这些工作已经在高压科学中开拓了一个新的领域，即贵金属元素氮化物的高压合成与物性研究．     

Mn掺杂Fe2B晶体结构、力学性能及电子结构的第一性原理研究

基于密度泛函理论的第一性原理计算方法,本文系统地研究了Fe8-xMnxB4 (x = 0, 0.25, 0.5, 1, 2, 3, 4, 5, 6, 7 ,8)的晶体结构、机械性能和电子结构。计算得到Fe2B的晶格常数与实验值相符,所有相都具有良好的热力学稳定性和机械稳定性。随着Mn掺杂浓度逐渐增大,Fe8-xMnxB4的各向异性先减弱后增强,Fe7.75Mn0.25B4的各向异性最弱。当Mn掺杂浓度较低时,Fe8-xMnxB4的硬度略微降低,韧性增强。除了Fe7Mn1B4、Fe6Mn2B4、Fe5Mn3B4、Fe4Mn4B4之外,其余的Fe8-xMnxB4相的韧性均比Fe2B好。由电子结构可以发现,Fe8-xMnxB4的力学性能主要由Fe-B键或Mn-B键决定。Mn掺杂到Fe2B中会使得B-B共价键增强,Fe2B的本征脆性得到改善,同时Fe2B的磁性不断减弱。     

Structural,mechanical, and electronic properties of P3m1-BCN

The mechanical and electronic properties of P3m1-BCN have been studied by using first principles calculations. The anisotropy studies of Young's modulus, shear modulus and Poisson's ratio show that P3m1-BCN exhibits a large anisotropy. Electronic structure study shows that P3m1-BCN is an indirect semiconductor with band gap of 4.10 eV. Unusually, the band gap of P3m1-BCN increase with increasing pressure.     

First-principles study on alloying stability, electronic structure, and mechanical properties of Al-based intermetallics

First-principles calculations were performed to study on alloying stability, electronic structure, and mechanical properties of Al-based intermetallic compounds (AlCu₃, AlCu₂Zr, and AlZr₃). The calculated results show that the lattice parameters obtained after full relaxation of crystalline cells are consistent with experimental data. The calculation of cohesive energies indicated that the structure stability of these Al-based intermetallics will become higher with increasing Zr element in crystal. The calculations of formation energies showed that AlCu₂Zr has the strongest alloying ability, followed by AlZr₃ and finally the AlCu₃. The further analysis find out that single-crystal elastic constants at zero-pressure satisfy the requirement of mechanical stability for cubic crystals. The calculations on the ratio of bulk modulus to shear modulus reveal that AlCu₂Zr can exhibit a good ductility, followed by AlCu₃, whereas AlZr₃ can have a poor ductility; however, for stiffness, these intermetallics show a converse order. The calculations on Poisson's ratio show that AlCu₃ is much more anisotropic than the other two intermetallics. In addition, calculations on densities of states indicate that the valence bonds of these intermetallics are attributed to the valence electrons of Cu 3d states for AlCu₃, Cu 3d, and Zr 4d states for AlCu₂Zr, and Al 3s, Zr 5s and 4d states for AlZr₃, respectively; in particular, the electronic structure of the AlZr₃ shows the strongest hybridization, leading to the worst ductility.     

Simultaneous structural,magnetic, and electronic transition and electronic structure in La0.85Na0.15MnO3

The lattice parameters, magnetization and electronic resistivity of La_0.85Na_0.15MnO₃ as a function of temperature were investigated. A simultaneous structural, magnetic, and electronic transition was observed. We argued that this is the result of strong electron–lattice coupling and may be a trace of Jahn–Teller distortion. X-ray photoelectron valence-band spectra measurement at room temperature is also carried out and its results suggest the mobile charge carries had localized below T_C.     

The mechanical,thermodynamic and electronic properties of Al3Nb with DO22 structure: A first-principles study

The lattice constants, elastic properties, electronic structure and thermodynamic properties of Al₃Nb with DO₂₂ structure have been investigated by the first-principles calculation. The calculated lattice constants were consistent with the experimental values, and the structural stability was also studied from the energetic point of view. The single-crystal elastic constants (C_ij) as well as polycrystalline elastic parameters (bulk modulus B, shear modulus G, Young's modulus E, Poisson's ratio υ and anisotropy value A) were calculated, and brittleness of Al₃Nb was discussed in detail. Besides, the electronic structure of tetragonal Al₃Nb was studied, which indicates a mixture of metallic bond and covalent bond in Al₃Nb and reveals the underlying mechanism of the stability and elastic properties of Al₃Nb. Finally, the thermodynamic properties of Al₃Nb were calculated and the physical properties such as heat capacity and Debye temperature were predicted within the quasi-harmonic approximation.     

边修饰Net-Y纳米带的电子结构及机械开关特性的应变调控效应

利用密度泛函理论和非平衡态格林函数相结合的方法,系统地研究了边修饰Net-Y纳米带的电子结构和器件特性的应变调控效应..计算表明:本征纳米带为金属,但边缘的氢或氧原子端接能使其转变为半导体.应变能有效地调控纳米带带隙的大小,适当的应变使能带结构从间接带隙转变为较小的直接带隙,这有利于光的吸收.应变也能改变纳米带的功函数,压缩应变能明显减小功函数,这有利于纳米带实现场发射功能.特别是应变能有效地调控纳米带相关器件的I-V特性,能使其开关比(I_on/I_off)达到106,据此,可设计一个机械开关,通过拉伸及压缩纳米带使其可逆地工作在“开”和“关”态之间.这种高开关比器件也许对于制备柔性可穿戴电子设备具有重要意义.     

Investigations of structural,electronic, mechanical and lattice dynamic properties of TiRu3 and TiOs3 compounds

Ab initio calculations of structural, electronic, elastic, and phonon properties of TiRu₃ and TiOs₃ compounds have been studied using the density functional theory (DFT) within the generalized gradient approximation (GGA). The basic structural properties such as lattice constants, bulk modulus and pressure derivative of bulk modulus of these compounds were studied and compared with the previous theoretical data. Electronic band structures and partial densities of states for TiRu₃ and TiOs₃ compounds were computed and analyzed. The electronic band calculations showed that the TiRu₃ and TiOs₃ compounds have metallic nature. Phonon spectra, their total and projected densities of states for these compounds were computed by using a linear-response method in the framework of the density functional perturbation theory. The specific heat capacities at a constant volume C_V and Debye temperature of TiCr₃ and TiOs₃ compounds were also calculated and discussed.     

First principles study of structural stability,electronic structure and mechanical properties of ReN and TcN

The crystal structure, structural stability, electronic and mechanical properties of ReN and TcN are investigated using first principles calculations. We have considered five different crystal structures: NaCl, zinc blende (ZB), NiAs, tungsten carbide (WC) and wurtzite (WZ). Among these ZB phase is found to be the lowest energy phase for ReN and TcN at normal pressure. Pressure induced structural phase transitions from ZB to WZ phase at 214 GPa in ReN and ZB to NiAs phase at 171 GPa in TcN are predicted. The electronic structure reveals that both ReN and TcN are metallic in nature. The computed elastic constants indicate that both the nitrides are mechanically stable. As ReN in NiAs phase has high bulk and shear moduli and low Poisson's ratio, it is found to be a potential ultra incompressible super hard material.     

Hamiltonian structure of particle motion in an ideal helical wiggler with guide field

The ideal helical wiggler with guide field is shown to possess an integrable hamiltonian. Explicit generating functions are presented for the canonical transformation to action-angle variables.     

高压下c-BN的力学、电子结构及光学性质研究

为了研究不同压力下c-BN的力学性质、电子结构以及光学性质的变化,基于密度泛函理论构建了不同压力下c-BN的晶体模型。发现c-BN在不同压力下均力学稳定,随着压力增加,c-BN的弹性常数逐渐增大,材料的可压缩性逐渐变差;c-BN在零压下的禁带宽度为4.367 eV,表明c-BN是间接宽带隙半导体,随着压力增加,c-BN的禁带宽度逐渐增大,态密度谱图变化不明显;对Milliken 布居分布在不同压力下进行分析,表明随着压力增加,B、N原子杂化后形成的B-N共价性增强。对c-BN的复介电函数、折射率、反射率等进行分析,发现随着压力增大,它们都产生一定蓝移,且在整个可见光谱范围以及红外与紫外（约从204nm开始）光谱的很大范围内都透明。研究结果对高压下c-BN的应用有一定参考价值。