Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film

Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge is 95 ± 14 meV below E(F). Theory agrees well with the valence band measurements, and shows an incomplete gap at E(F) due to the hole band at M shifting almost below E(F).     

Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene, we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap Δ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential Δ(cr), separating the insulating regime from a percolative regime in which less than half of the area of the bilayer graphene sample is insulating. We find that most of the current experiments are in the percolative regime with Δ(cr)?Δ. The huge suppression of Δ(cr) compared with Δ provides a possible explanation for the large difference between the theoretical band gap Δ and the experimentally extracted transport gap.     

贵金属氮化物晶体结构、电子结构和力学性能的实验与理论研究进展

氮化铂（Pt-N）是高温高压条件下合成的第一种块体二元贵金属氮化物，由于该化合物具有高的体弹性模量和特殊的电子结构从而吸引了世界范围内一些理论研究者的目光．Pt-N中金属原子的质量远远大于非金属原子的质量，因此X射线衍射仅能确定Pt原子的位置，拉曼光谱虽然能限制N原子的对称性，但仍不能确定其具体位置．以上因素使得确定这种新合成物质的晶体结构成了理论研究的焦点，这些工作已经在高压科学中开拓了一个新的领域，即贵金属元素氮化物的高压合成与物性研究．     

First-principles study on alloying stability, electronic structure, and mechanical properties of Al-based intermetallics

First-principles calculations were performed to study on alloying stability, electronic structure, and mechanical properties of Al-based intermetallic compounds (AlCu₃, AlCu₂Zr, and AlZr₃). The calculated results show that the lattice parameters obtained after full relaxation of crystalline cells are consistent with experimental data. The calculation of cohesive energies indicated that the structure stability of these Al-based intermetallics will become higher with increasing Zr element in crystal. The calculations of formation energies showed that AlCu₂Zr has the strongest alloying ability, followed by AlZr₃ and finally the AlCu₃. The further analysis find out that single-crystal elastic constants at zero-pressure satisfy the requirement of mechanical stability for cubic crystals. The calculations on the ratio of bulk modulus to shear modulus reveal that AlCu₂Zr can exhibit a good ductility, followed by AlCu₃, whereas AlZr₃ can have a poor ductility; however, for stiffness, these intermetallics show a converse order. The calculations on Poisson's ratio show that AlCu₃ is much more anisotropic than the other two intermetallics. In addition, calculations on densities of states indicate that the valence bonds of these intermetallics are attributed to the valence electrons of Cu 3d states for AlCu₃, Cu 3d, and Zr 4d states for AlCu₂Zr, and Al 3s, Zr 5s and 4d states for AlZr₃, respectively; in particular, the electronic structure of the AlZr₃ shows the strongest hybridization, leading to the worst ductility.     

Simultaneous structural,magnetic, and electronic transition and electronic structure in La0.85Na0.15MnO3

The lattice parameters, magnetization and electronic resistivity of La_0.85Na_0.15MnO₃ as a function of temperature were investigated. A simultaneous structural, magnetic, and electronic transition was observed. We argued that this is the result of strong electron–lattice coupling and may be a trace of Jahn–Teller distortion. X-ray photoelectron valence-band spectra measurement at room temperature is also carried out and its results suggest the mobile charge carries had localized below T_C.     

The mechanical,thermodynamic and electronic properties of Al3Nb with DO22 structure: A first-principles study

The lattice constants, elastic properties, electronic structure and thermodynamic properties of Al₃Nb with DO₂₂ structure have been investigated by the first-principles calculation. The calculated lattice constants were consistent with the experimental values, and the structural stability was also studied from the energetic point of view. The single-crystal elastic constants (C_ij) as well as polycrystalline elastic parameters (bulk modulus B, shear modulus G, Young's modulus E, Poisson's ratio υ and anisotropy value A) were calculated, and brittleness of Al₃Nb was discussed in detail. Besides, the electronic structure of tetragonal Al₃Nb was studied, which indicates a mixture of metallic bond and covalent bond in Al₃Nb and reveals the underlying mechanism of the stability and elastic properties of Al₃Nb. Finally, the thermodynamic properties of Al₃Nb were calculated and the physical properties such as heat capacity and Debye temperature were predicted within the quasi-harmonic approximation.     

First principles study of structural stability,electronic structure and mechanical properties of ReN and TcN

The crystal structure, structural stability, electronic and mechanical properties of ReN and TcN are investigated using first principles calculations. We have considered five different crystal structures: NaCl, zinc blende (ZB), NiAs, tungsten carbide (WC) and wurtzite (WZ). Among these ZB phase is found to be the lowest energy phase for ReN and TcN at normal pressure. Pressure induced structural phase transitions from ZB to WZ phase at 214 GPa in ReN and ZB to NiAs phase at 171 GPa in TcN are predicted. The electronic structure reveals that both ReN and TcN are metallic in nature. The computed elastic constants indicate that both the nitrides are mechanically stable. As ReN in NiAs phase has high bulk and shear moduli and low Poisson's ratio, it is found to be a potential ultra incompressible super hard material.     

First-principles study of structural,mechanical, and electronic properties of W alloying with Zr

The structural, mechanical and electronic properties of W_(1-x)Zr_x(x=0.0625, 0.125, 0.1875, 0.25, 0.5) are systematically investigated by means of first-principles calculation. The total-energy calculations demonstrate that the W–Zr binary substitutional solid solution remaining bcc structure can be formed at an atom level. In addition, the derived bulk modulus(B), shear modulus(G), Young's modulus(E) for each of W–Zr alloys decrease gradually with the increase of Zr concentration, suggesting that W alloying with higher Zr concentration becomes softer than pure W metal. Based on the mechanical characteristic B/G ratio, Poisson's ratio υ and Cauchy pressure C, all W_(1-x)Zr_x alloys are regarded as ductile materials. The ductility for each of those materials is improved with the increase of Zr concentration. The calculated density of states indicates that the ductility of W_(1-x)Zr_x is due to the fact that the bonding in the alloy becomes more metallic through increasing the Zr concentration in tungsten. These results provide incontrovertible evidence for the fact that Zr has a significant influence on the properties of W.     

Thermal, mechanical, and electronic properties of glycine-sodium nitrate crystal

Glycine-sodium nitrate, C₂H₅N₂NaO₅ (GSN), crystals were grown from aqueous solutions by slow cooling with a temperature lowering rate of 1 °C/day in the range of 40-22 °C. These crystals were analyzed by differential thermal and thermogravimetric analysis (DTA-TGA) and mechanical hardness tester in order to obtain their thermal and mechanical properties. Mechanical characterization was done by studying the variation of microhardness with applied load. The dielectric properties of GSN were calculated by using the CASTEP code within the framework of the generalized gradient approximation (GGA). For better understanding of the optical properties of GSN, the second derivative of ε₂(E) was evaluated. DTA-TGA analysis showed that the material has a thermal stability up to 198 °C. The microhardness test was carried out for several faces of GSN crystals, and the tests revealed a load dependence to hardness. Analysis of the second derivative of ε₂(E) allowed to obtain better resolution of the electronic transitions involving the energy bands. Besides, a theoretical representation of the orbitals’ energy diagram was obtained. A discussion about the relation of structure-properties and molecular character of GSN is presented here.     

Surface gap and surface electronic states in CuGeO3 single crystal

The surface and bulk electronic excitations of CuGeO₃ are investigated by means of electron energy loss and polarized X-ray absorption spectroscopy. CuGeO₃ shows a surface charge transfer gap of about 3.0±0.3 eV. The unoccupied oxygen derived density of states, as probed by X-ray absorption at the O 1s edge, is in good agreement with recent many-body calculations.     

新型超导材料MgCNi3的电子结构与超导电性研究

用MS-Xα方法研究了非氧化物超导材料MgCNi3的电子结构.研究结果显示,态密度分布曲线的主峰靠近Fermi面,主要来自于Ni的d电子的贡献.用T(T=Co,Mn,Cu)替代MgCNi3中的部分Ni形成化合物MgCNi2T,替代使Ni的价电子数减小,价态发生变化,Fermi面处态密度N(EF)减小.计算结果表明:无论是电子掺杂(Cu)还是空穴掺杂(Co,Mn),MgCNi3的超导电性都被抑制;Mn掺杂比Co掺杂更快地抑制超导电性,Co是作为空穴掺杂而不是作为磁性杂质掺杂去抑制超导.     

Optical absorption and electronic structure of intermetallic compound RuIn3

The optical properties of intermetallide RuIn₃ are investigated by ellipsometry in the spectral range of 0.22–10 μm. The experimental data point to the existence of an energy gap of about 0.5 eV in the electronic spectrum of the compound. The density of the electron states and interband optical conductivity are calculated in terms of the density functional theory. The experimental and theoretical spectra of the optical conductivity are compared. It is found that the formation of basic absorption bands is caused by interband transitions of electrons of the d-band of Ru and p-band of In.     

Theoretical investigation on electronic structure and mechanical properties of cubic crystallographic structures with point defects in Al-based alloys

Electronic structure and mechanical properties of cubic crystallographic structures with point defects in Al-based alloys are investigated using the first-principles calculations. Equilibrium structural parameters and mechanical parameters such as bulk modulus, shear modulus, Young's modulus, Poisson's ratio and anisotropy are calculated and agreed well with experimental values. Effects of point defects on the electronic structures and mechanical properties of such cubic phases are further analyzed and discussed in view of the charge density and the density of states.     

B80 fullerene: an Ab initio prediction of geometry, stability, and electronic structure

The geometry, electronic, and structural properties of an unusually stable boron cage made of 80 boron atoms are studied, using ab initio calculations. The shape of this cluster is very similar to that of the well-known C60 fullerene, but in the B80 case, there is an additional atom in the center of each hexagon. The resulting cage preserves the Ih symmetry, has a relatively large highest occupied and lowest unoccupied energy gap ( approximately 1 eV) and, most importantly, is energetically more stable than boron double rings, which were detected in experiments and considered as building blocks of boron nanotubes. To our knowledge, this is the most stable boron cage studied so far.     

Ab initio calculation of the phase stability,mechanical properties and electronic structure of ZrCr2 Laves phase compounds

Ab initio calculations have been used to investigate the phase stability, mechanical properties and electronic structure of ZrCr₂ Laves phase compounds, based on the method of augmented plane waves plus local orbitals with the generalized gradient approximation. The calculated lattice constants for the C15, C36 and C14 structures are in good agreement with experimental values. The calculation of heats of formation showed that C15 is a ground-state phase, whereas C36 is an intermediate phase and C14 the high-temperature phase. The elastic constants and elastic moduli for the C15 structure were calculated systematically and compared with experiments and previous theoretical calculations. The intrinsic and extrinsic stacking fault energies are found to be 112 and 98?mJ?m^?2, respectively. The equilibrium separations between Schockley are also predicted using the calculated elastic moduli and stacking fault energies. Finally, the calculated electronic structures of these Laves phases are discussed based on these results.     

Atomic,electronic, and vibronic structure of semiconductor surfaces

A brief review on recent progress in the theory of electronic, structural, and vibronic properties of semiconductor surfaces is presented with particular emphasis on the empirical and selfconsistent scattering theoretical method for semiinfinite systems. The current knowledge of the Si(001) (2×1) surface is discussed in detail. The Ge(001) (2×1) surface, as well as, the clean and the Ge-covered GaAs(110) surfaces are addressed, in addition. In the discussion of the results it is shown, that the scattering theoretical method is an extremely versatile tool for calculating electronic surface properties unambiguously with high spectral resolution concerning energy, wavevector, layer-index and orbital type. Currently used approaches for calculating the total energy, Hellmann-Feynman forces and optimal structure models are summarized. Using the total energy as a starting point, the calculation of atomic force constants and surface phonon spectra is exemplified.