Thermoluminescence of corundum containing anion defects following ultraviolet laser and x irradiation

The thermoluminescence of single crystals of corundum containing anion defects following x-ray and laser excitation is investigated. Its features in the luminescence bands of F, F⁺, and Cr³⁺ centers are studied. Synchronous measurements of the thermoluminescence and thermally stimulated exoelectron emission are performed by the fractional glow technique following x-ray and laser excitation of the samples. It follows from the results obtained that several traps are active in the temperature range of the principal dosimetric peak (400–500 K). The spectral sensitivity curve contains maxima corresponding to absorption bands of F, F⁺, and Al _i ⁺ centers. A possible mechanism for the recombination luminescence of F centers is discussed. It is found that the material exhibits high sensitivity to small doses of ultraviolet laser radiation. Zh. Tekh. Fiz. 67, 72–76 (July 1997)     

Generation of color centers when annealing LiF crystals irradiated by Kr ions with an energy of 150 MeV

The effect thermal annealing has on F and F _n centers in LiF crystals irradiated by Kr ions with an energy of 150 MeV is studied with allowance for fluence and ionic currents. It is found that annealing at a temperature of 400 K using crystals irradiated at a fluence of ≥10¹³ iom/cm² reduces the concentration of F centers (due to annihilation with H centers) and raises the concentration of complex F _n centers.     

Relaxation processes in colored crystals of LiF after the coaction of UV radiation and a shock wave

The relaxation of F ₂ ⁺ centers in radiation-colored crystals of lithium fluoride starting from the moment of the coaction of pulsed UV irradiation and a shock wave is investigated. It is shown that the annealing curve of these centers displays a nonmonotonic character at room temperature and is a consequence of three + processes. The first two are the processes of disintegration of unstable (short-lived) and stable F ₂ ⁺ centers, and the third process involves the formation of stable centers upon a random encounter of appropriate constituents in the course of their diffusive wandering over the lattice.     

Ion bombardment-induced charge state effects CaO single crystals: F+ and F centers

The effects of heavy-and light-ion bombardment on defect formation in CaO have been investigated by UV-absorption spectroscopy and volume measurements. While 500 keV Ar or Ca implantation produces only F⁺ centers, 240 keVH produces both F⁺ and F centers at a F⁺ to F ratio of 5.6 to 1. On the other hand, when an argon implanted sample is subsequently bombarded with hydrogen, about 30% of the F⁺ centers anneal during 1 ×10¹⁴ H/cm²; at higher H fluences, new F⁺ and F centers are produced. An effect of energy partition between ionization and nuclear/atomic collision processes for the incident ions on the charge state of the resulting defect is thus clearly demonstrated.

The formation and annealing of these defects are accompanied by volume changes in the ion implanted surface layer which can be monitored in sltu with a cantilever beam technique. The measurements show volume expansion of the order of 1.5% following 10¹⁶ 500 keV Ar implantation; subsequent implantation of 10¹⁸ 240 keV H compacts the previously expanded material by 25 %. These results are in qualitative agreement with the optical data and seem to indicate that volume changes are associated with the formation and annealing of F⁺ centers.     

Aggregate color center formation processes in lithium fluoride crystals after irradiation

Lithium fluoride crystals were irradiated by different doses of gamma photons at a temperature of 77 K. We measured the aggregation kinetics for the color centers with different annealing temperatures above the temperature of anion vacancy mobility. We show that the lifetimes of the vacancies decrease while the lifetimes of the F₂⁺ F_2^{+} centers increase as the irradiation dose increases. We explain these types of dependences based on the aggregation processes for color centers in the post-radiation period. We determine the time constants and energies (analogous to activation energies in the Arrhenius equation) for the various processes involving rise and fall in the concentration of aggregate color centers. Based on the experimental data obtained, we have established the processes forming F ₂ and F₃⁺ F_3^{+} centers in the post-radiation period. The F ₂ centers are formed when vacancies ν_a add to F₁^- F_1^{-} centers. Vacancies arising during irradiation of the crystal participate in their creation in the first fast stage. In the long final stage, vacancies are used which appear in the post-radiation period on occurrence of the reaction F₂⁺ F_2^{+} + H → ν_a + fluoride ion at the lattice site, where H is an interstitial fluorine atom. The F₃⁺ F_3^{+} centers are formed both by merging F₂⁺ F_2^{+} and F ₁ centers and as a result of addition of vacancies to F ₂ centers. In this case, vacancies are used that are generated not only during irradiation of the crystal but also in the post-radiation period. The rise in the concentration of F₃⁺ F_3^{+} centers occurs faster than the rise in the concentration of F ₂ centers.     

锑化铟的热处理

本文叙述N型InSb单晶和含有大晶粒的双晶样品(n～1.23×10¹⁴—2.40×10¹⁵cm^-3,μ_e～5.15×10⁵cm²/V·sec—2.10×10⁵cm²/V·sec),在500℃下、不同气氛中进行热处理产生受主,引起热转换,而整块地变为P型样品,当继续热处理使温度达到熔点以上时,这种P型样品中的热受主消失了,而转变回到原来的N型样品;若把这种N型样品再在500℃下进行热处理,则它又整块地变为P型样品。我们对这一新发现的过程进行了一些研究,发现这种现象与材料的不同制备条件和热处理时的环境气氛不同有关,并对不同气氛下的循环热转换过程和熔化效应作了论述。在500℃下进行热处理所引起的热受主浓度与热处理时间的关系中,发现在热处理起始的一段时间内,热受主形成速率较大;随着热处理时间的增加,热受主浓度达到一个饱和值;若再加长热处理时间,则热受主浓度开始下降,这现象与硅的热处理现象相似。根据实验得到的新结果进行分析,认为这种热处理现象不象是外来因素的影响所引起的,而是一种原来存在于InSb中的内在因素所起的作用,推测可能是与氧和氢有关。最后我们对解释这种热处理现象的可能的机理进行了探讨。     

Spectroscopic characteristics of anionic centers in α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> crystals bombarded by Cu<Superscript>+</Superscript> and Ti<Superscript>+</Superscript> ions

We have studied the effect of bombardment by Cu⁺ and Ti⁺ ions with energy 30 keV on the optical absorption and luminescence of F centers in oxygen-deficient aluminum oxide. We have shown that in the induced optical absorption spectra there are six components of gaussian shape, which can be assigned to absorption bands of F⁺, F², and F₂⁺ centers. We have established that bombardment of the samples by ion beams has a weak effect on the thermoluminescence parameters in the 3.0 eV and 2.4 eV bands, while in the 3.8 eV luminescence band for F⁺ centers, the thermoluminescent response increases considerably. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 422–424, May–June, 2008.     

快中子辐照直拉硅中受主和施主的研究

通过傅里叶红外光谱、正电子湮没寿命谱和Hall技术研究了高剂量快中子辐照直拉硅的辐照 缺陷、电阻率、载流子迁移率、载流子浓度随退火温度的变化.经快中子辐照，直拉硅样品 的导电类型由n型转变为p型.在450和600℃热处理出现两种受主中心，分别由V2_{2O22，V22O，VO22，V-O-V及V44型缺 陷引起，这些缺陷态的出现使得样品中空穴浓度迅速增加；大于650℃热处理这些受主态 缺陷迅速消失， 关键词： 快中子辐照 空位型缺陷 受主 施主}     

Structural and electrical properties of high-k HfO2 films modified by CHF3 and C4F8/O2 plasmas

As-deposited HfO₂ films were modified by CHF₃, C₄F₈, and mixed C₄F₈/O₂ plasmas in a dual-frequency capacitively coupled plasma chamber driven by radio frequency generators of 60 MHz as the high frequency (HF) source and 2 MHz as the low frequency source (60/2 MHz). The influences of various surface plasma treatments under CHF₃, C₄F₈, and C₄F₈/O₂ were investigated in order to understand the chemical and structural changes in thin-film systems, as well as their influence on the electrical properties. Fluorine atoms were incorporated into the HfO₂ films by either CHF₃ or C₄F₈ plasma treatment; meanwhile, the C/F films were formed on the surface of the HfO₂ films. The formation of C/F layers decreased the k value of the gate stacks because of its low dielectric constant. However, the addition of O₂ gas in the discharge gases suppressed the formation of C/F layers. After thermal annealing, tetragonal HfO₂ phase was investigated in both samples treated with CHF₃ and C₄F₈ plasmas. However, the samples treated with O-rich plasmas showed monoclinic phase, which indicated that the addition of O plasmas could influence the Hf/O ratio of the HfO₂ films. The mechanism of the t-HfO₂ formation was attributed to oxygen insufficiency generated by the incorporation of F atoms. The capacitors treated with C₄F₈/O₂ plasmas displayed the highest k value, which ascribed that the C/F layers were suppressed and the tetragonal phase of HfO₂ was formed. Good electrical properties, especially on the hysteresis voltage and frequency dispersion, were obtained because the bulk traps were passivated by the incorporation of F atoms. However, the H-related traps were generated during the CHF₃ plasma treatments, which caused the performance degradation. All the treated samples showed lower leakage current density than the as-deposited HfO₂ films at negative bias due to the reduced trap-assisted tunneling by the incorporation of F to block the electrons transferring from metal electrode to the trap level.     

Formation and stabilization of F centers following direct generation of self-trapped excitons in KCl crystals

The spectrum of luminescent F centers generated in high-purity KCl crystals by 7–10.2-eV photons has been measured at 230 K. The pulsed annealing of these centers (250–550 K), as well as the dependence of the efficiency of stable F-center generation on irradiation temperature (80–500 K) has been studied. The efficiencies of F ⁻ and Cl ₃ ⁻ -center generation are maximum under direct optical creation of self-trapped excitons in the region of the Urbach intrinsicabsorption tail. Besides the exciton decay with formation of F centers and mobile H centers, a high-temperature exciton decay channel which involves creation of cation defects stabilizing the H centers has been revealed. Fiz. Tverd. Tela (St. Petersburg) 41, 433–441 (March 1999)     

A light induced configurational change of FA centres in Li doped KCl-KBr crystals

Abstract

Spectroscopic properties of F_A centres in Li doped KCl-KBr mixed crystals were studied. At low temperature light induced spectral shifts, for the F_A1 hand towards lower energy and for the F_A2 band towards higher energy, were observed. The shifts are proposed to be due to a configurational change where the electron occupied vacancy finds a new location in relation to the neighbouring chlorine and bromine ions. The recovery to the original configuration, obtained in the F → F_A conversion, is a temperature activated process.     

LiF晶体F3+色心的实验研究

本文从实验上系统地研究了在不同条件下电子束辐照LiF晶体所形成的F₃⁺色心的光学特点。并且由荧光光谱分析了F₃⁺心和F₂心,的相对密度关系。实验表明,辐照温度对于色心的形成和密度的相对大小起着关键的作用。主要实验结果包括:1)在液氮温度下辐照,然后在暗处加热至室温可形成高密度的F₃⁺心,表现在发射光谱中F₃⁺心荧光占绝对优势。吸收光谱表明没有N心和R心。2)由动力学荧光谱可以看到低温辐照的样品在F₂⁺心衰变的同时,F₃⁺心密度迅速增加。而室温辐照的样品则是F₂心,与F₃⁺心的密度以近似相等的速率增加。3)详细观察了F₃⁺心530nm荧光激发带与F₂心670nm荧光激发带半宽度的变化和双峰结构。由此对M吸收区的发光特点作了解释。 关键词：     

Mechanosynthesis of YIG and GdIG: A Structural and Mössbauer Study

We have investigated the mechanosynthesis of gadolinium and yttrium iron garnets by high-energy ball-milling of α-Fe₂O₃ and Gd₂O₃ or α-Fe₂O₃ and Y₂O₃, respectively, followed by short thermal annealings conducted at moderate temperatures. The samples were characterized by X-ray diffraction and Mössbauer spectroscopy, in order to determine the influence of the milling time and annealing conditions on the final products. For as-milled samples of each rare-earth system, the results revealed the formation of perovskite phases, in relative amounts that depend on the milling time. The formation of garnet phases was observed in as-annealed samples treated at 1000°C for 2 h or 1100°C for 3 h, i.e., at very modest annealing requirements when compared with ordinary solid-state-reaction processes performed without previous high-energy milling. Also, the occurrence was verified of a milling time for which the relative amount of garnet phases formed by annealing was maximized. This time depends on the rare-earth composing the garnet phase and on the annealing temperature.     

On the absence of energy transfer between F and M centers in KCl

M-centers, when excited in M₁ and M_F bands, show the same luminescence in the 79–263 K temperature range. No evidence of any energy transfer between F and M centers has been found. The measurements of other authors, involving such a process, are discussed. In addition an investigation of a possible change in the radiative lifetime, due to the presence of α centers, gives a negative result.     

A conversion electron Mössbauer spectroscopy study of pulsed laser treatment at α-Fe2O3/H2O interface

Magnetite (Fe₃O₄) has been synthesized for the first time by using pulsed ruby laser induced reactive quenching process at α-Fe₂O₃/H₂O interface. Iron foils (99.99% pure) were oxidised at 450° C for four hours to form a thick layer of α-Fe₂O₃ on it. These oxidised samples were immersed in water and then treated with ruby laser pulses (λ=0.694 μm, pulse width = 30 ns, energy density = 10 J/cm²). The conversion electron Mössbauer spectroscopy (CEMS) has been used to characterize the laser induced surface modifications. It is shown that laser treated samples show the formation of Fe₃O₄ phase along with FeO. The stability of magnetite phase in laser treated sample against thermal treatment is also studied by investigating the changes in hyperfine interaction parameters upon vacuum annealing at 300° C.     

F-Zentren und Kolloide in der amorphen,hexagonalen und kubischen Phase von LiJ

By simultaneous evaporation of LiI and Li onto a cooled substrate F centers can be produced in the hexagonal (78 K<T _K <200 K) and amorphous (T _K <78 K) phase of one and the same salt. In both modifications there exist two types of centers F and F^*. The F^* center differs from the cubic F center (T _d -symmetry) by a nearby Frenkel defect. In hexagonal films the normal F band peaks at 2.58 eV, whereas the transitions of the F^* center appear at 2.92 and 2.58 eV too. Polarized irradiation at 20 K causes a dichroic behaviour of the F^* centers. Both types of centers can be transformed into one another photochemically. In the amorphous phase all transitions are shifted to lower energies by about 0.1 eV. After the phase change amorphous→hexagonal the absorption bands shift back by the same amount of energy. AboveT _K =230 K the excess metal forms colloids. The absorption bands are due to colloidal centers embedded in the crystalline material (2.25 eV) and films adsorbed to the crystallites (3.1 eV), respectively. By annealing a particle growth can be observed. After electrolytic colouration cubic single crystals of LiI exhibit an absorption band peaking at 2.36 eV. However, it is not yet sure, if this band is allowed to be ascribed to F centers.     

Effect of annealing temperature on hardness, thickness and phase structure of carbonitrided 304 stainless steel

Carbonitriding of AISI 304 austenitic stainless steel was performed at a plasma-processing power of 450 W using inductively coupled radio frequency (rf) plasma in a gas mixture of 50% N₂ and 50% C₂H₂. The rate of carbonitriding, microhardness, phase structure of the compound layer, surface microstructure and cross-section morphology were studied before and after the annealing process. At the annealing temperature up to 800°C, the microhardness values of the compound zones decrease, while the associated values of the diffused zones increase. Little change was found in the thickness of the compound and diffused zones when the carbonitrided samples were annealed up to 400°C. However, at a higher annealing temperature, the thicknesses of both zones increase. The γ-Fe austenite is the main crystalline phase that can be detected by X-ray diffraction. As the annealing temperature increases up to 500°C, X-ray spectra show α-Fe and Fe₅C₂ phases. Nitrogen diffuses more deeply from the near surface to the interior of the treated sample as the annealing temperature increases up to 800°C and this might explain the extent of carbonitrided thickness and the enhanced microhardness of the diffused zone.     

非晶态Fe13.3Ni69.6B16.2Si0.9的结构驰豫

本文讨论了非晶合金Fe_13.3Ni_69.6B_16.2Si_0.9的结构弛豫动力学及可逆弛豫过程,研究了各种热处理引起居里温度T_c的变化。发现经长时间退火后T_c趋于平衡值且动力学可通过弛豫时间连续谱加以描述。可逆弛豫过程可用CSRO来说明,并且某一物理量的可逆变化并不意味着整个结构的变化是可逆的。 关键词：     

Comparative investigations of TL and OSL in KCI:Eu2+ crystals irradiated with UV and X-rays

Abstract

We present thermoluminescence (TL) glow curves and optical stimulated luminescence (OSL) response from both KCl:Eu²⁺ crystals irradiated with soft X-rays (20 KV, 80 μA) and ultraviolet light (230 nm). Two situations take place. First, we observed that for long time F-light bleaching (560 nm) the typical TL glow curve of X-rays irradiated KCl:Eu²⁺ resembles the TL glow curve of UV-irradiated samples. Second, along with OSL measurements, we have performed a thermal bleaching and we have addressed F and F_z participation in OSL. These results provide us a supportable correlation between F and F_z as responsible centers for OSL and TL processes.