Enhanced ferroelectricity and ferromagnetism in Bi0.9Ba0.1FeO3/La2/3Sr1/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.1FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO) heterostructures are fabricated on LaAlO3(100) substrates by pulsed laser deposition. Giant remnant polarization value(～ 85 μC/cm2) and large saturated magnetization value(～ 12.4 emu/cm3) for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectric properties in the BBFO/LSMO heterostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Ferroelectricity in hexagonal YFeO3 film at room temperature

In this paper we report the leakage current,ferroelectric and piezoelectric properties of the YFe O3film with hexagonal structure,which was fabricated on Si(111)substrate by a simple sol-gel method.The leakage current test shows good characteristics as the leakage current density is 5.4×10-6A/cm2under 5 V.The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region.The P–E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature.The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy,which testifies to the ferroelectricity of the YFe O3film further.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Effects of LSMO Buffer Layer on Crystalline Orientation and Ferroelectric Properties of Bi2.9Pr0.9Ti3O12 Thin Films Prepared by Radio-Frequency Magnetron Sputtering

Ferroelectric Bi_2.9Pr_0.9Ti₃O₁₂/La_0.67Sr_0.33MnO₃ (BPT/LSMO) films are fabricated on Pt(111)/TiO₂/SiO₂/Si substrates by rf-magnetron sputtering method. The influences of the LSMO deposition conditions and LSMO layer thickness on properties of BPT thin films are studied. The LSMO layer deposited at 300°C and 450°C favours preferred (117) orientation of BPT films, while deposited at 600°C for LSMO layer leads to strong (111)-preferred orientation of BPT film. With the LSMO buffer layer, the films exhibit improved ferroelectric properties and Pt/BPT/LSMO(20nm)/Pt capacitor shows the largest remnant polarization P_r of 18.4μC/cm² at 14V. A similar change in dielectric constant with the increase of LSMO layer thickness is also observed and the highest dielectric constant of 342.7 is obtained for the Pt/BPT/LSMO(20nm)/Pt film. Compared with the Pt/BPT/Pt film, the Pt/BPT/LSMO/Pt films exhibit better fatigue endurance after 5×10⁹ switching cycles. Moreover, the LSMO layer has apparent effect on leakage current density and the Pt/BPT/LSMO(20nm)/Pt film exhibits the lowest leakage current density.     

The Sr content influence on the positive magnetoresistance in La1-xSrxMnO3/Si heterojunctions

<正>We fabricated La_(1-x)Sr_xMnO_3/Si(LSMO/Si) heterojunctions with different Sr doping concentrations(x = 0.1, 0.2,0.3) in LSMO and studied the Sr content influence on magnetoresistance(MR) ratio.The hetero junctions show positive MR and high sensitivity of MR ratio in a low applied magnetic field.The MR ratio is dependent on Sr content and the low Sr doping in LSMO causes a large positive MR in LSMO/Si junctions.The MR ratio for 0.1 Sr doping in the LSMO/Si heterostructure is 116%in 100 Oe(1 Oe=79.5775 A/m) at 210 K.The mechanism for the positive MR dependence on the doping density is considered to be the competition between the tunneling rate of electrons in e_g~1↑to t_(2g)↓band and that to e_g~2↑band at the interface region of LSMO.The experimental results are in agreement with those observed in La_(0.9)Sr_(0.1)MnO_3/SrNb_(0.01)Ti_(0.99)O_3 p-n junction.The results indicate that choosing low doping concentration to improve the low field sensitivity of the heterojunction devices is a very efficacious method.     

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films

We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage(I–V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures( 253 K), the I–V curve shows an open circuit voltage(OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures( 253 K), the I–V behaviors are governed by both space-charge-limited conduction(SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.     

Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors

Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.     

Electric current-induced giant electroresistance in La_(0.36)Pr_(0.265)Ca_(0.375)MnO_3 thin films

The electroresistance(ER) of La_(0.36)Pr_(0.265)Ca_(0.375)MnO_3(LPCMO) epitaxial thin film was studied under various dc currents.The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 μm.The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current,which is much higher than ER under 1 mA for the patterned weak phase-separated La_(0.67)Ca_(0.33)MnO_3 and La_(0.85)Sr_(0.15)MnO_3 microbridges with 50-μm width.More interestingly,for the patterned LPCMO microbridge,the maximum of ER can reach 0.6 under a small current of 100 μ.A.The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase,and the variation of the phase separation with electric current.     

Roles of Nano-Domain Switching and Non-180° Domains in Enhancing Local Piezoelectric Responses of Highly (100)-Oriented Pb(Zr_(0.60)Ti_(0.40))O_3 Thin Films

Ferroelectric Pb(Zr_(0.60)Ti_(0.40))O_3 thin films deposited on the niobium-doped SrTiO_3 and Pt(111)/Ti/SiO_2/Si substrates are fabricated by a sol-gel method.X-ray diffraction indicates that the films have a 'cube-on-cube'growth with highly(100)preferred orientation and good surface qualities.Using piezoelectric force microscopy,we investigate domain structures and butterfly amplitude loops of ferroelectric thin fims.The results indicate that the film deposited on Nb:SrTiO_3 has both kinds of 180° polarizations perpendicular or parallel to the surface while the film deposited on Pt/Ti/SiO_2/Si has irregular phase differences.Excellent piezoelectric polarization are observed in the films on niobium-doped SrTiO_3 with local d_(33)~* values around 45 pm/V three times more than that of the films around 13 pm/V deposited on Pt(111)/Ti/SiO2/Si. Our findings emphasize that nanodomain switching ability and non-180° domains will contribute significantly to enhance piezoelectric responses of ferroelectric thin films.     

氧气氛退火对La0.7Sr0.3MnO3薄膜结构及性能的影响

利用磁控溅射方法,在(100)Si、LaAlO_3(LAO)和SrTiO_3(STO)衬底上制备得到了La_(0.7)Sr_(0.3)MnO_3(LSMO)薄膜,通过X射线衍射仪、原子力显微镜以及磁性测量系统研究了不同温度氧气氛下的后续退火对LSMO薄膜结构及磁学性能的影响.结果表明随着退火温度的升高,LAO和STO衬底上的LSMO薄膜氧含量逐渐增加,Mn4 /Mn3 的比值逐渐趋向于3∶7,表现为面外晶格常数逐渐减少,饱和磁化强度及居里温度都有明显提高,而矫顽力则有所降低;拉曼散射实验结果更直观的给出了退火后LSMO晶格有序性的增加和Jahn-Teller畸变的减弱;而Si单晶上的LSMO薄膜在高温下由于与衬底发生了复杂的化学反应而导致相结构发生改变.     

Enhanced magneto-electric effect in manganite tricolor superlattice with artificially broken symmetry

The magneto-electric effect in magnetic materials has been widely investigated, but obtaining an enhanced magnetoelectric effect is challenging. In this study, tricolor superlattices composed of manganese oxides—Pr_(0.9)Ca_(0.1)MnO_3,La_(0.9)Sr_(0.1)MnO_3, and La_(0.9)Sb_(0.1)MnO_3—on(001)-oriented Nb:SrTiO_3 substrates with broken space-inversion and timereversal symmetries are designed. Regarding the electric polarization in the hysteresis loops of the superlattices at different external magnetic fields, both coercive electric field E_c and remnant polarization intensity P_r clearly show strong magneticfield dependences. At low temperatures( 120 K), a considerable magneto-electric effect in the well-defined tricolor superlattice is observed that is absent in the single compounds. Both maxima of the magneto-electric coupling coefficients ?E_c and ?P_r appear at 30 K. The magnetic dependence of the dielectric constant further supports the magneto-electric effect. Moreover, a dependence of the magneto-electric effect on the periodicity of the superlattices with various structures is observed, which indicates the importance of interfaces. Our experimental results verify previous theoretical results regarding magneto-electric interactions, thereby paving the way for the design and development of novel magneto-electric devices based on manganite ferromagnets.     

Effect of mechanical force on domain switching in BiFeO_3 ultrathin films

Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain gradient.In this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force microscopy.When the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the film.The mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical method.Furthermore,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.     

Improved multiferroic properties of La-doped 0.6BiFeO₃-0.4SrTiO₃ solid solution ceramics

The 0.6(Bi1-xLax)FeO 3-0.4SrTiO 3(x = 0,0.1) multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization(Pr) and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6(Bi0.9La0.1)FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

Anomalous magnetostrictive effects in （La1—xTbx）2／3Sr1／3 MnO3

A series of (La_{1-x}Tb_x)_{2/3}Sr_{1/3}MnO_3 polycrystalline samples has been studied by means of x-ray diffraction, magnetostriction, and thermal expansion measurements. It has been found that this series undergoes a phase transition from a rhombohedral to an orthorhombic form at the doping level x≈0.20 at room temperature accompanied by an anisotropic magnetostriction up to －50×10^{-6} under a magnetic field of 1T. The linear and volume magnetostrictions vary with chemical composition, even change sign. At T=80K, the magnetostrictions for the samples of x=0.20 and 0.40 exhibit different behaviours. The sample of x=0.20 has positive volume and linear magnetostrictions and a negative anisotropic magnetostriction, while the sample of x=0.40 has an opposite behaviour. The magnitude of volume magnetostriction for both the samples is essential (～10^{-4}) at T=80K under a magnetic field of 4T. We conclude that these anomalous effects are due to the charge delocalization and the structural phase transition between orthorhombic and rhombohedral forms induced by the applied magnetic field.     

Dielectric and piezoelectric properties of(110) oriented Pb(Zr_(1-x)Ti_x)O_3 thin films

A phenomenological Landau–Devonshire theory is developed to investigate the ferroelectric, dielectric, and piezoelectric properties of(110) oriented Pb(Zr_(1-x)Ti_x)O_3(x = 0.4, 0.5, 0.6, and 0.7) thin films. At room temperature, the tetragonal a_1 phase, the orthorhombic a_2c phase, the triclinic γ_1 phase, and the triclinic γ_2 phase are stable. The appearance of the negative polarization component P_2 in the a_2c phase and the γ_1 phase is attributed to the nonlinear coupling terms in the thermodynamic potential. The γ phase of the Pb(Zr_(1-x)Ti_x)O_3 thin films has better dielectric and piezoelectric properties than the a_2c phase and the a_1 phase. The largest dielectric and piezoelectric coefficients are obtained in the Pb(Zr_(0.5)Ti_(0.5))O_3 thin film. The piezoelectric coefficient of 110–150 pm/V is obtained in the(110) oriented Pb(Zr_(0.5)Ti_(0.5))O_3 thin film, and the Pb(Zr_(0.3)Ti_(0.7))O_3 thin film has the remnant polarization and relative dielectric constant of 50 μC/cm~2 and 100, respectively,which are in agreement with the experimental measurements reported in the literature.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Room-Temperature Magnetism Realized by Doping Fe into Ferroelectric LiTaO3

We synthesize LiTal-x FexO3-σ （LTFO） remain single phase up to x = 0.09 ceramics by the conventional solid-state reaction method. The samples The magnetic measurements show that the doping of Fe successfully realizes ferromagnetism of LTFO at room temperature. The dielectric measurements indicate that LTFO is ferroelectric, similarly to LiTaO3 （LTO）, but its ferroelectric Curie temperature seems to decrease with the increasing Fe content. By means of doping Fe ions into LTO, the coexistence of spontaneous electric polarization and spontaneous magnetic moment is realized at room temperature.     

Tunable strain effect on the charge/orbital ordering state in electron-doped La0.9Hf0.1MnO3 films

The impact of the lattice strain on the charge/orbital ordering state was studied by using a heterostructure composed with electron-doped La 0.9 Hf 0.1 MnO 3(LHMO) and ferro-and piezoelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3.The ferroelectric poling induces a significant reduction in the biaxial tensile strain in the LHMO film,leading to a decrease in the film resistance over the whole temperature range and an increase in the insulator to metal transition temperature T IM.The resistance of LHMO film exhibits different responses to the external electric fields and lattice deformation,which is attributed to the coactions of converse piezoelectric effect and ferroelectric polarity effect.The modification of charge/orbital ordering phase by the electric fields and ferroelectric polarization suggests that the unstable states in the manganites are sensitive to strain effects.     

Improved multiferroic properties of La-doped 0.6BiFeO3—0.4SrTiO3 solid solution ceramics

The 0.6（Bi1-xLax）FeO 3-0.4SrTiO 3（x = 0,0.1） multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization（Pr） and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6（Bi0.9La0.1）FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.