激光诱变选育果胶酶高产菌株

采用Ar⁺、He-Ne、LD、YAP等激光辐照果胶酶产生菌,不同波长激光辐照均获高酶活菌株,其中从LD激光与He-Ne激光辐照组中选育出酶活达6×10⁴单位/g的高产菌株(比对照组提高122%),并稳定地应用于生产.文中从黑曲霉抱子与DNA的吸收光谱以及电镜观察黑曲霉抱子的结果出发,对激光诱变机制进行了初步探讨.     

基于光纤光栅的可调谐半导体激光器

本文利用光纤光栅(FBG)形成外腔反馈及F-P半导体激光器的多模特性,得到波长稳定、可调谐的半导体激光光源,系统研究了不同反馈比率对激光器光谱特性的影响.通过向FBG施加轴向拉力和压力可实现10nm的波长调谐,得到一系列波长间隔0.94nm的激光输出,边模抑制比达35dB,光谱线宽小于0.2nm.     

Lasers for materials processing: specifications and trends

An overview is given of the types of lasers dominating the field of laser materials processing. The most prominent lasers in this field are the CO₂ and the Nd: YAG laser. The domain of CO₂ lasers is applications which demand high laser powers (up to 30 kW are available at present), whereas the domain of Nd:YAG lasers is micro-machining applications. In the kilowatt range of laser output power, the two types of lasers are in competition. New diffusion-cooled CO₂ laser systems are capable of output laser powers of several kilowatts, with good beam qualities, while still being quite compact. The output power and beam quality of Nd:YAG lasers has been improved in recent years, so that Nd:YAG lasers are now an alternative to CO₂ lasers even in the kilowatt range. This is especially true for applications that demand optical fibre transmission of the laser beam, which is possible with Nd:YAG laser light but not with the longerwavelength light emitted by CO₂ lasers. The main problem in solid-state lasers such as Nd:YAG is the thermal lensing effect and damage due to thermal stresses. In order to reduce thermal loading, cooling has to be enhanced. Several alternative geometries have been proposed to reduce thermal loading and, by this, thermal lensing effects. There are now slab and tube geometries which allow much higher output powers than the conventionally used laser rods. A very new scheme proposes a thin slab whose cooled side is also used as one of the laser mirrors, so that thermal gradients occur mainly in the direction of the beam propagation and not perpendicular to it, as is the case in the other geometries. As well as CO₂ and Nd:YAG lasers, semiconductor laser diodes are very promising for direct use of the emitted light or as pump sources for Nd:YAG and other solid-state lasers. When packaging together thousands of single laser diodes, output powers of several kilowatts can be realized. Major problems are collimation of the highly divergent laser beams and cooling of the laser diode bars.     

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 μm InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 μm and 1.55 μm InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7–10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 μm and 1.55 μm InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. Kunio Tada and Yoshiaki Nakano for their cooperation in the fabrication of the novel gain-coupled DFB lasers.     

Design of 1060nm tapered lasers with separate contacts

Numerical simulations have been used to produce advanced designs of high brightness gain guided tapered lasers emitting at 1,060 nm. The simulations predicted high modulation efficiency in devices with separate contacts and low front facet reflectivity. The devices fabricated following these design guidelines demonstrated high internal quantum efficiency in Broad Area lasers, output power of 3 W with good beam quality in tapered lasers with common contacts, and modulation efficiencies up to 20 W/A in tapered lasers with separate contacts, in good agreement with the simulation predictions.     

The use of low power air-cooled lasers in conjunction with an intensified diode array for Raman spectroscopy

A range of air-cooled lasers operating with a single phase electricity supply has been evaluated for use in laser-Raman spectroscopy. Three main types of laser are available — helium-neon, argon, and helium-cadmium. Such lasers should prove valuable for applications such as on-line sampling in hostile environments, where their robust nature and low cost give distinct advantages over conventional water-cooled gas ion lasers.     

Near-infrared trace-gas sensors based on room-temperature diode lasers

2 monitor designed for field applications using room-temperature diode lasers are presented. Near-infrared DFB lasers operating at 1.57 μm and around 2.0 μm have been used for CO₂ measurements. At ambient concentration levels a resolution of more than two orders of magnitude has been demonstrated at 1.57 μm, at 2 μm the precision is in the order of 0.1 ppm CO₂, and for trace analysis a detection limit of 10 ppb has been obtained. The measurements demonstrate the capability of near-infrared DFB diode lasers for the precise determination of CO₂ concentrations as required for climatological, medical, or industrial applications. Received: 24 February 1998/Revised version: 27 April 1998     

Threshold analysis of fiber-coupler-combined fiber lasers

Threshold conditions of coherently combined fiber lasers, joint by fiber couplers (FCs), have been studied. After considering the phase change of a light wave crossing the fiber inside the FC, it has been shown that, at the two input ports of the coupler connecting with the amplifying fibers, the phase difference between the two incoming fields should be equal to −π/2 if the threshold gain of the compound system is to be minimized. Starting from these input ports, following the circulations of waves, threshold conditions can be established. Expressions for the output and leakage powers, and optimum coupler splitting ratio nullifying the leakage when constituent fiber lasers giving different free-running powers have been derived. And, the threshold gain reductions of individual lasers after being coherently combined have been predicted.     

1.3μm无致冷AlGaInAs/InP应变补偿量子阱激光器设计与制作

基于半导体量子阱激光器的基本理论,设计了合理的1.3μm无致冷AlGaInAs/InP应变补偿量子阱激光器结构,通过低压金属有机化学气相外延(LP-MOVPE)工艺在国内首次生长出了高质量的AlGaInAs/InP应变补偿量子阱结构材料,用此材料制作的器件指标为激射波长:1280nm≤λ≤1320nm,阈值电流:I_th(25℃)≤15mA,I_th(85℃)≤30mA,量子效率变化:Δη_ex(25℃～85℃)≤1.0dB,线性功率:P₀≥10mW     

磁约束环境下气体激光介质中电子能量分布与电子输运系数的理论研究

引进磁作用的Ｂｏｌｔｚｍａｎｎ输运方程应用于一类特殊激励的激光器─—工作在横向磁场下的直流放电气体激光器中的工作介质．以二氧化碳激光器为研究对象，通过数值求解Ｂｏｌｔｚｍａｎｎ方程，研究了磁场对电子能量分布及电子输运系数的影响．通过分析，提出了以磁约束作用提高一般气体激光器效率的设想． 关键词：     

Self-pulsing phenomena in (GaAl) as double-heterostructure injection lasers

Repetitive self-pulsations under CW operation in the frequency range of 200 MHz–2 GHz are observed in many (GaAl)As double-heterostructure injection lasers. About 100 lasers of both low-mesa stripe geometry and with proton-implanted structures have been studied and about half of them exhibited more or less pronounced self-induced pulsations. The experimental results on three typical lasers are discussed more in detail on the basis of existing theories. Self-induced pulsations have often been observed in the non-linear region of the laser light output characteristic. The most probable reason for the instabilities appears to be a repetitive Q-switching process.     

Resonance Ionization Mass Spectrometry (RIMS) with Pulsed and CW-Lasers on Plutonium

The detection of long-lived plutonium isotopes in ultra-trace amounts by resonance ionization mass spectrometry (RIMS) is a well-established routine method. Detection limits of 10⁶ to 10⁷ atoms and precise measurements of the isotopic composition have been achieved. In this work multi-step resonance ionization of plutonium atoms has been performed with tunable lasers having very different output intensities and spectral properties. In order to compare different ways for the resonance ionization of plutonium broadband pulsed dye and titanium:sapphire lasers as well as narrow-band cw-diode and titanium:sapphire lasers have been applied for a number of efficient excitation schemes. It has been shown, that for identical excitation schemes the optical isotope selectivity can be improved by using cw-lasers (bandwidths < 10 MHz) instead of pulsed lasers (bandwidths > 2 GHz). Pulsed and cw-laser systems have been used simultaneously for resonance ionization enabling direct comparisons of pulsed and continuous ionization processes. So far, a three-step, three-color laser excitation scheme has been proven to be most practical in terms of efficiency, selectivity and laser wavelengths. Alternatively a newly discovered three-step, two-color excitation scheme which includes a strong two-photon transition from an excited state into a high-lying autoionizing state yields similar ionization efficiencies. This two-photon transition was characterized with respect to saturation behavior and line width.     

Deposition and characterization of ITO films produced by laser ablation at 355 nm

Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence and at high substrate temperatures, the specific resistivity of the films, 2–3×10^-4 Ω cm, is comparable to values obtained with excimer lasers, whereas the resistivities obtained at room temperature are somewhat higher than those of films produced by excimer lasers. The transmission coefficient of visible light, about 0.9, is also comparable to values for films deposited by excimer lasers. The crystalline structure of films produced at 355 nm is similar to that of samples produced by these lasers. Received: 16 January 2001 / Accepted: 24 July 2001 / Published online: 17 October 2001     

Coupled-cavity passively Q-switched two-Stokes microchip laser

Experimental and theoretical studies of the coupled-cavity diode-pumped Nd:YAG/Cr:YAG microchip lasers with intracavity Raman conversion of laser pulses in a Ba(NO₃)₂ crystal into two Stokes pulses have been made. Two lasers with a different cavity length have been investigated. The minimal pulse durations at the 2nd Stokes wavelength were ??100 ps in the short-cavity laser at pulse energy of 5???J, and the pulse repetition rate reached 20?C24?kHz. The laser and Stokes pulse dynamics, as well as the spatial intensity distribution of the laser and the 1st Stokes beams at the output mirror have been recorded. A model describing such coupled-cavity microchip Raman lasers has been developed. The numerically simulated laser and Stokes pulse dynamics, and the calculated pulse energy, duration, and repetition rate are in good agreement with the experimental data.     

UV-laser excitation of color center lasers

Direct uv-laser excitation of color center lasers is reported. By pumping the L-bands with nitrogen and excimer lasers tunable narrow-band operation in the range from 2.2 μm to 3.2 μm has been achieved using different F_A(II) and F_B(II) center crystals.     

Theoretical Study on Passively Mode-Locked Fiber Lasers with Saturable Absorber

In this paper, passively mode-locked erbium-doped fiber lasers based on saturable absorber (SA) have been theoretically studied. The energetics and pulse properties for different fiber laser cavity configurations have been investigated and the effects of each component (active fiber, passive fiber, and SA) in the laser cavity have been studied. This numerical study takes into account the temporal change in the saturable absorption (dq/dt).The presented simulations could be highly useful for understanding, optimizing, and improving passively mode-locked fiber lasers with SA.     

Line shapes of near-infrared DFB and VCSEL diode lasers under the influence of system back reflections

Laser diode line widths and line shapes are experimentally investigated in dependence on the diode current and on back reflections from an optical system. Four distributed-feedback (DFB)-type diode lasers and two vertical-cavity surface-emitting lasers (VCSELs) have been tested within the same optical setup and using the same fitting methods. System back reflection ratios of light reflected back to the laser have been varied between ?1?dB and ?45?dB and were below ?60?dB when all reflections were blocked. The background of this investigation is the evaluation of different laser types with respect to their suitability for sensor applications in which optical back reflections may occur, for example tunable diode-laser spectroscopy (TDLS). While DFB-type lasers showed almost pure Lorentzian line shapes and line widths of a few MHz, the tested VCSELs had a strong Gaussian contribution to the line shape, indicating stronger 1/f noise, which was also observed in the relative intensity noise of these particular lasers. System reflection ratios above ?25?dB had strong effects on the line width in both DFB diode lasers and VCSELs, while some influences have been observed at even lower reflection ratios for DFB diode lasers. As much smaller reflection ratios are typically required in TDLS systems to avoid etalon-like fringes and self-mixing interference effects, we conclude that the influence on the line width is not the most important reason to minimize back reflections in practical TDLS systems or to choose one type of diode laser over the other.     

All-optical clock recovery using parallel ridge-width varied DFB lasers integrated with Y-branch waveguide coupler

A novel device with two parallel ridge-width varied distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of butt-joint regrowth. A 22 GHz self-pulsation tuning range has been achieved by adjusting independently the driving currents of the two DFB lasers sections. 38.4 GHz all-optical clock recovery has been demonstrated for the first time using this device.     

全内腔绿光He-Ne激光器

采用Needle法,对全内腔绿光He-Ne激光器膜系进行设计,并给出了所设计膜系的光谱性能。利用离子溅射镀膜技术镀制了所设计的膜片并且给出了测量结果。制备了多种规格的全内腔绿光He-Ne激光器并且讨论了相关工艺。其中腔长420mm的全内腔绿光He-Ne激光器的典型输出光功率为3mW（单模）,腔长360mm的典型输出光功率为2mW（单模）,腔长240mm的典型输出光功率为1mW（单模）,腔长100mm的小短管子也能有0．1mw的出光功率。     

High-average-power flashlamp-pumped Nd:Glass fiber-bundle laser

Flashlamp-pumped high-gain fiber-bundle lasers consisting of multimode phosphate glass fibers have been investigated. By optimizing the fiber number and the outcoupling reflectivity in dependence on the pump conditions, high single-pulse energies in excess of 1 J as well as high-average-power extraction up to 100 W at a pulse repetition frequency of 100 Hz could be obtained from slim fiber-bundle lasers. Fiber numbers in the range of 150–250 and reflectivities between 35% and 50% have been found to provide reliable performance.