Superconductivity at the Normal Metal/Dirac Semimetal Cd_3As_2 Interface

We investigate the interface between a three-dimensional Dirac semimetal Cd_3As_2 and a normal metal via softpoint contact spectroscopy measurement.The superconducting gap features were detected below 3.8 K and 7.1 K in the case of Cd_3As_2 single crystals sputter-coated with the Pt and Au films,respectively,in the differential conductance dI/dV-V plots of the point contacts.As the applied magnetic field increased,the drop in the zerobias contact resistance shifted toward lower temperatures.The topologically non-trivial band structure of Cd_3As_2 is considered to play a crucial role in inducing the superconductivity.Apart from realizing superconductivity in topological materials,our creative approach can be used to investigate possible topological superconductivity and exhibits a high application potential in electronic devices.     

Non-Monotonic Evolution of Carrier Density and Mobility under Thermal Cycling Treatments in Dirac Semimetal Cd_3As_2 Microbelts

Tunable carrier density plays a key role in the investigation of novel transport properties in three-dimensional topological semimetals.We demonstrate that the carrier density,as well as the mobility,of Dirac semimetal Cd_3As_2 nanoplates can be effectively tuned via in situ thermal treatment at 350 K for one hour,resulting in non-monotonic evolution by virtue of the thermal cycling treatments.The upward shift of Fermi level relative to the Dirac nodes blurs the surface Fermi-arc states,accompanied by an anomalous phase shift in the oscillations of bulk states,due to a change in the topology of the electrons.Meanwhile,the oscillation peaks of bulk longitudinal magnetoresistivity shift at high fields,due to their coupling to the oscillations of the surface Fermi-arc states.Our work provides a thermal control mechanism for the manipulation of quantum states in Dirac semimetal Cd_3As_2 at high temperatures,via their carrier density.     

Coherent Acoustic Phonon and Its Chirping in Dirac Semimetal Cd_3As_2

Ultrafast optical spectroscopy of a single crystal of a Dirac semimetal Cd_3As_(2 )is carried out.An acoustic phonon(AP)mode with central frequency f=0.037 THz(i.e.,1.23 cm~(-1)or 0.153 meV)is unambiguously generated and detected,which we attribute to laser-induced thermal strain.An AP chirping(i.e.,variation of the phonon frequency)is clearly detected,which is ascribed to heat capacity variation with time.By comparing our experimental results and the theoretical model,we obtain a chirping time constant,which is 31.2 ps at 6 K and 19.8 ps at 300 K,respectively.Significantly,we identify an asymmetry in the AP frequency domain peak and find that it is caused by the chirping,instead of a Fano resonance.Moreover,we experimentally demonstrate that the central frequency of AP is extremely stable with varying laser fluence,as well as temperature,which endows Cd_3As_2application potentials in thermoelectric devices.     

Quantum transport properties of the three-dimensional Dirac semimetal Cd_3As_2 single crystals

The discovery of the three-dimensional Dirac semimetals have expanded the family of topological materials,and attracted massive attentions in recent few years.In this short review,we briefly overview the quantum transport properties of a well-studied three-dimensional Dirac semimetal,Cd_3As_2.These unusual transport phenomena include the unexpected ultra-high charge mobility,large linear magnetoresistivity,remarkable Shubnikov-de Hass oscillations,and the evolution of the nontrivial Berry's phase.These quantum transport properties not only reflect the novel electronic structure of Dirac semimetals,but also give the possibilities for their future device applications.     

Substrateless micrometric metal mesh for mid-infrared plasmonic sensors

We report on the fabrication and optical properties of thin metal films periodically patterned with square hole arrays of 2 micron pitch, which behave as substrateless plasmonic devices at mid-infrared frequencies. Large (3×3 mm²) meshes were fabricated by metallizing a patterned silicon nitride membrane. The mid-infrared spectra display resonant absorption lines with a Q-factor up to 22 in both transmission and reflection, due to the interaction of the radiation with surface plasmon modes on both faces of the film, allowed by substrate removal. The devices can be used to fabricate surface plasmon-based chemical sensors employing mid-infrared radiation.     

石墨烯超快动态光学性质

通过建立石墨烯的光学布洛赫方程, 研究了弱光场下的单层石墨烯超快动态光学性质. 理论研究表明在太赫兹辐射光场下由于泡利不相容和能量守恒原理使得石墨烯系统建立动态非平衡载流子并达到饱和的时间是20–200 fs, 能够在1 ps之内迅速产生光电流. 研究发现√2ev_F E₀ t<0 和ω 分别对应入射光的强度和频率, t为时间, v_F是石墨烯狄拉克点附近电子的费米速度. 研究发现光子能量?ω越大, 电极化强度以及光电流越强. 我们的理论研究结果与已有的众多实验结果一致, 表明石墨烯在超快动态光学领域尤其是太赫兹领域拥有重要的研究和应用价值.     

半导体物理效应及其应用讲座第四讲光吸收跃迁效应与半导体红外探测器的应用发展

光吸收跃迁效应是半导体光电探测器的基本物理过程.文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展.讨论窄禁带半导体带间光吸收跃迁的理论和实验.文章还介绍了本征光吸收系数的表达式及其在材料表征和确定器件截止波长方面的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用.     

PcNi-VO2复合膜相变光谱特性研究

采用射频磁控溅射的方法在蓝宝石衬底上沉积了高品质的VO2薄膜,并在其上旋涂了酞菁镍[C8H17O]8PcNi薄膜.通过XRD研究了VO2薄膜的微结构.利用红外光谱仪观察了PcNi/VO2复合膜相变前后光学性质的改变,发现PcNi膜在1.5～5.5 μm对VO2膜有增透作用,PcNi/VO2复合膜相对于VO2膜的热色性和相变温度都没有改变.预期PcNi/VO2膜比单一PcNi膜和VO2膜的光限幅能力会更强.     

Electron transport in Dirac and Weyl semimetals

Recently, the Dirac and Weyl semimetals have attracted extensive attention in condensed matter physics due to both the fundamental interest and the potential application of a new generation of electronic devices. Here we review the exotic electrical transport phenomena in Dirac andWeyl semimetals. Section 1 is a brief introduction to the topological semimetals(TSMs). In Section 2 and Section 3, the intriguing transport phenomena in Dirac semimetals(DSMs) andWeyl semimetals(WSMs) are reviewed, respectively. The most widely studied Cd_3A_(s2) and the TaAs family are selected as representatives to show the typical properties of DSMs and WSMs, respectively. Beyond these systems, the advances in other TSM materials,such as ZrTe_5 and the MoTe_2 family, are also introduced. In Section 4, we provide perspectives on the study of TSMs especially on the magnetotransport investigations.     

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb{2}Te{3} thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in a Sb{2}Te{3} topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as a 2D massless Dirac fermion system is achieved. We demonstrate that four quintuple layers are the thickness limit for a Sb{2}Te{3} thin film being a 3D topological insulator. The mechanism of the Landau-level broadening is discussed in terms of enhanced quasiparticle lifetime.     

High quality PdTe_2 thin films grown by molecular beam epitaxy

PdTe_2,a member of layered transition metal dichalcogenides(TMDs),has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions.It provides a promising platform to explore the interplay between superconducting quasiparticles and Dirac fermions.Moreover,PdTe_2 has also been used as a substrate for monolayer antimonene growth.Here in this paper,we report the epitaxial growth of high quality PdTe_2 films on bilayer graphene/SiC(0001)by molecular beam epitaxy(MBE).Atomically thin films are characterized by scanning tunneling microscopy(STM),X-ray photoemission spectroscopy(XPS),low-energy electron diffraction(LEED),and Raman spectroscopy.The band structure of 6-layer PdTe_2 film is measured by angle-resolved photoemission spectroscopy(ARPES).Moreover,our air exposure experiments show excellent chemical stability of epitaxial PdTe_2 film.High-quality PdTe_2 films provide opportunities to build antimonene/PdTe_2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.     

MBE法制备VO2薄膜及其中红外调制深度测量

为了给VO₂薄膜在定向红外对抗系统防护方面的应用提供理论依据,我们用透过率调制深度表征VO₂薄膜在中红外波段的相变特性。本实验利用分子束外延法（MBE）制备VO₂外延单晶薄膜,经XRD、AFM表征,发现其具有（020）择优取向、纯度较高,薄膜表面平整、均匀且致密。经VU-Vis-IR测量发现其近红外透过率相变特性显著,但在紫外和可见光范围内透过率相变特性较不明显。然后我们对制备时间为30 min、40 min的两组薄膜分别进行25~70℃的升温和降温实验,观察其对波长为3 459 nm、脉宽50 ns、重频50 kHz、功率密度0.14 W/cm²的中红外激光的透过率变化,并比较两组薄膜的温滞曲线特性。实验发现它们对中红外透过率的调制深度均可达60%以上,前者比后者对中红外的调制深度高出约4%。这说明利用分子束外延法制备的VO₂单晶薄膜具有良好的中红外调制特性,且调制深度和膜厚有关。进一步表明了利用VO₂薄膜实现中红外激光防护具有一定的可行性。     

Au/MXene based ultrafast all-optical switching

All-optical switches have arisen great attention due to their ultrafast speed as compared with electric switches. However, the excellent optical properties and strong interaction of two-dimensional (2D) material MXene show great potentials in next-generation all-optical switching. As a solution, we propose all-optical switching used Au/MXene with switching full width at half maximum (FWHM) operating at 290 fs. Compared with pure MXene, the Au/MXene behaves outstanding performances due to local surface plasmon resonance (LSPR), including broadband differential transmission, strong near-infrared on/off ratio enhancement. Remarkably, this study enhances understanding of Au/MXene based ultrafast all-optical switching red-shifted about 34 nm in comparison to MXene, validating all optical properties of Au/MXene opening the way to the implementation of optical interconnection and optical switching.     

Plasma dynamics and determination of ablation parameters using the near-target magnified imaging during pulsed laser ablation

A comparative study of the ultrafast dynamics on ZnO thin films deposited on flat Si substrates and on Si micro-cones following ultrashort laser excitation has been carried out using time-resolved optical spectroscopy. By monitoring the transient band gap renormalization induced by nonlinearly excited carriers it is found that fast electron scattering and trapping occurs more efficiently in the micro-cones as compared to the flat films. This enhanced trapping efficiency is attributed to the defects and imperfections that are introduced by the increased surface roughness due to the conical shape.     

Electronic properties of the Dirac and Weyl systems with first- and higher-order dispersion in non-Fermi-liquid picture

We investigate the non-Fermi-liquid behaviors of the 2D and 3D Dirac/Weyl systems with low-order and higher order dispersion. The self-energy correction, symmetry, free energy, optical conductivity, density of states, and spectral function are studied. We found that, for Dirac/Weyl systems with higher order dispersion, the non-Fermi-liquid features remain even at finite chemical potential, and they are distinct from the ones in Fermi-liquid picture and the conventional non-Fermi-liquid picture. The power law dependence of the physical observables on the energy as well as the logarithmic renormalizations due to the long-range Coulomb interaction are showed. The Landau damping of the longitudinal excitations within random-phase-approximation (RPA) for the non-Fermi-liquid case are also discussed.     

Ultrafast relaxation in quasi-one-dimensional organic molecular crystals

We present a comprehensive study of ultrafast relaxation properties of optical excitations in thin films of quasi-1D stacked organic materials PTCDA (3,4,9,10-perylenetetracarboxylic dianhydride) and MePTCDI (N,N'-dimethylperylene-3,4,9,10-dicarboximide) over five decades of time. Pump-probe experiments reveal excitonic intraband relaxation time constants of 65 fs for MePTCDI and 100 fs for PTCDA. The initial time-resolved luminescence anisotropy is consistent with the exciton model of Davydov-split states. The subsequent decay of the anisotropy can be explained with a thermally activated exciton hopping process. A full understanding of the pump-probe experiments calls for an explanation beyond the models presently available.     

Resonant terahertz generation from InN thin films

Highly efficient conversion from ultrafast optical pulses to their terahertz (THz) counterparts has been achieved with InN thin films. An average THz output power as high as 0.931 microW has been obtained for an average pump power of 1 W, corresponding to a normalized conversion efficiency of 190% mm(-2). Based on our measured dependences of the THz output power on pump polarization, incident angle, pump power, and InN film thickness, resonance-enhanced optical rectification is one of the most plausible mechanisms for the THz generation in the InN films.     

MXene与溶剂界面电子振动耦合现象的直接观测

作为一种新型的二维材料,MXene凭借其各种优异的物理化学性质已受到极为广泛的关注,例如其具有极其出色的光热转换效率. 然而,人们对MXene的光热转换机制仍然知之甚少. 本文通过结合飞秒可见和中红外瞬态吸收光谱技术,对分散在各种溶剂中MXene(Ti₃C₂T_x)纳米片内的电子能量耗散动力学进行了系统的研究. 结果表明,MXene的激发态寿命在很大程度上取决于周围的溶剂环境. 在MXene被超快激光泵浦后,可以直接观察到MXene纳米片与相邻溶剂分子之间的界面电子振动耦合现象. 这些结果表明界面相互作用在MXene的超快能量传输动力学中起着关键的作用. 这一发现可为二维体系光转换性能的改进提供了一条潜在可行的途径.     

中红外超快光纤激光器研究进展

中红外波段覆盖重要的分子吸收区与多个大气透射窗口,该波段的超快激光器在多个领域具有广泛应用。基于光纤的中红外超快激光器近年来在激光发射与传输、超快脉冲产生与应用等方面发展迅速,为中红外波段超快激光开辟了新的研究手段与应用领域。综述了近十年来中红外超快光纤激光器的发展概况,介绍了近年来中红外波段的激光传输与增益手段。其中,重点回顾了近年来中红外超快脉冲产生技术的研究进展及其代表性工作,包括非线性偏振旋转、可饱和吸收体以及频移反馈锁模技术。此外,还介绍了中红外超快脉冲的压缩放大技术与超连续谱产生应用。最后讨论并总结了中红外超快光纤激光器面临的挑战与可能的发展方向。     

高质量单层二硫化钼薄膜的研究进展

作为一种新型的二维半导体材料,单层二硫化钼薄膜由于其优异的特性,在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展,具体包括:在二硫化钼薄膜的制备方面,通过氧辅助化学气相沉积方法,实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长;在二硫化钼薄膜的加工方面,发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法,为场效应晶体管等电子学器件的制备与性能优化提供了基础;在二硫化钼异质结方面,研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质,为二维材料异质结的构筑和器件特性研究提供了实验参考;在二硫化钼薄膜功能化器件与应用方面,构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件,验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势;此外,利用制备的高质量单层二硫化钼和发展的器件洁净加工技术,实现了高性能柔性薄膜晶体管的集成,获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.