光栅局域调控二维光电探测器

近年来,二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注.特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质,使其在下一代光电子器件领域具有广阔的应用前景.本文将主要介绍二维材料在光电探测领域上的应用优势,概述光电探测器的基本原理和参数指标,重点探讨光栅效应与传统光电导效应的区别,以及提高光增益和光响应度的原因和特性,进而回顾光栅局域调控在光电探测器中的最新进展及应用,最后总结该类光电探测器面临的问题及对未来方向的展望.     

Band gap engineering of atomically thin two-dimensional semiconductors

Atomically thin two-dimensional(2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes(LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.     

Research progress of low-dimensional metal halide perovskites for lasing applications

Metal halide perovskites have been regarded as remarkable materials for next-generation light-harvesting and light emission devices. Due to their unique optical properties, such as high absorption coefficient, high optical gain, low trappingstate density, and ease of band gap engineering, perovskites promise to be used in lasing devices. In this article, the recent progresses of microlasers based on reduced-dimensional structures including nanoplatelets, nanowires, and quantum dots are reviewed from both fundamental photophysics and device applications. Furthermore, perovskite-based plasmonic nanolasers and polariton lasers are summarized. Perspectives on perovskite-based small lasers are also discussed. This review can serve as an overview and evaluation of state-of-the-art micro/nanolaser science.     

拓扑量子材料光电探测器研究进展

物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破.由于存在不同于常规半导体的特殊拓扑量子态(如狄拉克费米子、外尔费米子、马约拉纳费米子等),拓扑量子材料通常能表现出一些新颖的物理特性(如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等),因而在低能耗电子器件和宽光谱光电探测器件领域具有重要...     

Photodetectors based on two-dimensional materials and organic thin-film heterojunctions

High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.     

Graphene-based heterojunction for enhanced photodetectors

Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.     

Photodetecting and light-emitting devices based on two-dimensional materials

Two-dimensional(2D) materials, e.g., graphene, transition metal dichalcogenides(TMDs), and black phosphorus(BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High-performance and multifunctional devices were achieved by employing diverse designs, such as hybrid systems with nanostructured materials, bulk semiconductors and organics, forming 2D heterostructures. In this review,we mainly discuss the recent progress of 2D materials in high-responsive photodetectors, light-emitting devices and single photon emitters. Hybrid systems and van der Waals heterostructure-based devices are emphasized, which exhibit great potential in state-of-the-art applications.     

The rise of two-dimensional tellurium for next-generation electronics and optoelectronics

Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.     

石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

Fast Liquid Phase Epitaxial Growth for Perovskite Single Crystals

Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable performance.However,there are many reasons why it is difficult to achieve high quality films.For example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic perovskites.In this work,MAPbBr^{MA=CH3NH3^+}perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is demonstrated.It is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial growth.The whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial layer.Compared with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility.     

Recent progress in all-inorganic metal halide nanostructured perovskites: Materials design,optical properties,and application

Low-dimensional all-inorganic metal halide perovskite (AIMHP) materials, as a new class of nanomaterials, hold great promise for various optoelectronic devices. In the past few years, tremendous progress has been achieved in the development of efficient and stable AIMHP nanomaterials for optical property studies and related applications. Here, we offer a critical overview on the unique merits and the state-of-the-art design of AIMHP using different composition strategies. Then, the effects of material compositions, dimensionality, morphologies and structures on optical properties are summarized. We also comprehensively present recent advances in the development AIMHP nanomaterials for practical applications including solar cells, light-emitting diodes, lasers and photodetectors. Lastly, the critical challenges and future opportunities in this emerging field are highlighted.     

二维过渡金属硫族化合物中的缺陷和相关载流子动力学的研究进展

原子级厚度的单层或者少层二维过渡金属硫族化合物因其独特的物理特性而被寄希望成为下一代光电子器件的重要组成部分.然而,二维材料的缺陷在很大程度上影响着材料的性质.一方面,缺陷的存在降低了材料的荧光量子效率、载流子迁移率等重要参数,影响了器件的性能.另一方面,合理地调控和利用缺陷催生了单光子源等新的应用,因此,表征、理解、...     

Ultrafast photoelectric effects and high-sensitive photovoltages in perovskite oxides and heterojunctions

Perovskite oxides and heterojunctions have attracted much attention due to their multifunctional properties of electricity and optics and magnetic as well as the very good chemical and thermal stability. In this brief review, we describe the novel progress of researches in the optical characteristic, including ultrafast photoelectric effects of picosecond order in perovskite oxide single crystals, thin-films and heterojunctions, high-sensitive photovoltages, the enhanced transient lateral photovoltages in perovskite oxide thin-films and heterojunctions, and the high-sensitive ultraviolet (UV) photodetectors based on perovskite oxides. The recent advances present in this paper not only could stimulate theoretical studies on the mechanism but also would open up the possibilities in the developments of optoelectronic devices based on perovskite oxides and heterojunctions.     

量子点增强硅基探测成像器件的研究进展

硅基探测成像器件具有可靠性高、易集成和成本低等优点,是目前应用最广泛的探测成像器件。随着人工智能和无人驾驶等技术的日益发展,对探测成像器件提出了更高的要求,而硅基探测成像器件性能的提升成为重要的研究方向。量子点具有吸收系数大、光谱可调、发光效率高和易集成等优点,是一类优异的光谱转换和光调制材料。利用量子点材料可调制的光学特性,可以对硅基探测成像器件的功能进行拓展,从而实现紫外响应增强、红外响应拓展、紫外偏振探测和多光谱成像等功能。经过多年的研究,这一领域已经取得了一定的进展,部分技术展现出较好的应用前景。本文介绍了量子点增强硅基探测器在紫外探测、红外成像、偏振探测和多光谱成像方面的研究进展,希望能够引起国内学术界和工业界的关注和重视。     

Ge/Si photodetectors and group IV alloy based photodetector materials

Photodetectors using Si, Ge and their alloys with other group IV elements are of current interest for application in telecommunication as well as in optical interconnects. We have presented in this paper our work on resonant cavity enhanced Si/SiGe multiple Quantum Well and Ge Schottky photodetectors. Calculated values of external quantum efficiency for GeSiC based photodetectors are also reported. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors using strong Quantum Confined Stark Effect and Franz-Keldysh Effect in these structures and properties related to photodetection using these new materials are also described.     

半导体材料的华丽家族—氮化镓基材料简介

GaN基氮化物材料已成功地用于制备蓝,绿,紫外光发光器件,日光盲紫外探测器以及高温,大功率微波电子器件,由于该材料具有大的禁带宽度,高的压电和热电系数,它们还有很强的其他应用潜力,诸如做非挥发存储器以及利用压电和热效应的电子器件等,在20世纪80年代末和90年代初,在GaN基氮化物材料的生长工艺上的突破引发了90年代GaN基器件,特别是光电子和高温,大功率微波器件方面的迅猛发展,文章评述了GaN基氮化物的材料特性,生长技术和相关器件应用。     

Epitaxy of III-nitrides on two-dimensional materials and its applications

III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of III-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality, low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices. In this progress report, the main methods for the preparation of 2D materials, and the recent progress and applications of different techniques for the growth of III-nitrides based on 2D materials are reviewed.     

Alternative transparent conducting electrode materials for flexible optoelectronic devices

Transparent Conductive Electrode (TCE) is an essential part of the optoelectronic and display devices such as Liquid Crystal Displays (LCDs), Solar Cells, Light Emitting Diodes (LEDs), Organic Light Emitting Diodes (OLEDs) and touch screens. Indium Tin Oxide (ITO) is a commonly used TCE in these devices because of its high transparency and low sheet resistance. However, scarcity of indium and brittle nature of ITO limit its use in future flexible electronics. In order to develop flexible optoelectronic devices with improved performance, there is a requirement of replacing the ITO with a better alternate TCE. In this work, several alternative TCEs including transparent conductive oxides, carbon nanotubes, conducting polymers, metal nanowires, graphene and composites of these materials are studied with their properties such as sheet resistance, transparency and flexibility. The advantage and current challenges of these materials are also presented in this work.     

Theoretical Study of the Electronic and Optical Properties to Design Dye-Sensitivity for Using in Solar Cell Device

In this work, the structural and optoelectronic properties of phenanthrene-1,3,4-thaidiazoles oligomers were calculated using density functional theory (DFT) at B3LYP/6-31G(d) basis set level, to evaluate their possible application as organic semiconductor materials in photovoltaic and solar cell devices. For this reason, the energy gaps, frontier orbital (HOMO, and LUMO) distributions, total energies, Fermi level energies, work functions and maximum wavelength absorption, vertical absorption energies, and oscillator strengths have been investigated and discussed. The structures of phenanthrene-1,3,4-thiadiazoles oligomers are expanded from 1 to 10 thiadiazole monomeric units, to examine the increase of thiadiazole monomeric units on the optoelectronic properties. We observed that increased the number of monomeric units lead to significantly enhance the optoelectronic properties, which caused to decrease the gap energy from 3.69 eV in the structure with one thiadiazole ring just to 2.36 eV with 10 units. These changes give the shift of maximum absorption wavelengths from 376 to 578 nm. Consequently, these molecules have main absorption bands within the solar spectrum, to give the best performance for photovoltaic and organic solar cells devices.     

Advance of optoelectronic devices for long wavelength optical fiber communication in china

The advance of optoelectronic devices for long wavelength optical fiber communication in China is reviewed. The main features of the long wavelength semiconductor lasers and photodetectors are presented.