沉积态铀薄膜表面氧化的X射线光电子能谱

含铀(U)薄膜在激光惯性约束聚变的实验研究中有重要的用途.研究其在不同气氛下的氧化性能可以为微靶制备、储存及物理实验提供关键的实验数据.通过超高真空磁控溅射技术制备了纯U薄膜及金-铀(Au-U)复合平面膜,将其在大气、高纯氩(Ar)气及超高真空度环境中暴露一段时间后,利用X射线光电子能谱仪结合Ar~+束深度剖析技术考察U层中氧(O)元素分布及价态,分析氧化产物及机理.结果显示,初始状态的U薄膜中未检测到O的存在.Au-U复合薄膜中的微观缺陷减弱了Au防护层的屏蔽效果,使其在3周左右时间内严重氧化,产物为U表面致密的氧化膜及缺陷周围的点状腐蚀物,主要成分均为二氧化铀(UO_2).在高纯Ar气中纯U薄膜仅暴露6 h后表面即被严重氧化,生成厚度不均匀的UO_2.在超高真空度环境下保存12 h后,纯U薄膜表面也发生明显氧化,生成厚度不足1 nm的UO_2.Ar~+束对铀氧化物的刻蚀会因择优溅射效应而使UO_2被还原成非化学计量的UO_(2-x),但这种效应受O含量的影响.     

Patterned deposition by plasma enhanced spatial atomic layer deposition

An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al₂O₃ films from trimethyl aluminum and an He/O₂ plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources. It was observed that the sharpness of the patterns is primarily influenced by the concentration of reactive plasma species and by the dimensions of the plasma source. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Properties of AlN grown by plasma enhanced atomic layer deposition

The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of 100-300 °C with plasma discharge times between 2.5 and 30 s. The AlN films were shown to be hydrogen rich having H concentrations in the range of 13-27 at.% with inverse dependence on the growth temperature. The carbon and oxygen concentrations in the films were less than 2.6% and 0.2%, respectively. The refractive index and mass density of the films correlated with the hydrogen concentration so that higher concentrations (lower growth temperatures) resulted in smaller refractive index and mass density. The film grown at 300 °C was found to be crystalline whereas lower growth temperature produced amorphous films.     

Effect of corona pre-treatment on the performance of gas barrier layers applied by atomic layer deposition onto polymer-coated paperboard

The effect of corona pre-treatment on the performance of Al₂O₃ and SiO₂ gas barrier layers applied by atomic layer deposition onto polymer-coated paperboards was studied. Both polyethylene and polylactide coated paperboards were corona treated prior to ALD. Corona treatment increased surface energies of the paperboard substrates, and this effect was still observed after several days. Al₂O₃ and SiO₂ films were grown on top of the polymer coatings at temperature of 100 °C using the atomic layer deposition (ALD) technique. For SiO₂ depositions a new precursor, bis(diethylamido) silane, was used. The positive effect of the corona pre-treatment on the barrier properties of the polymer-coated paperboards with the ALD-grown layers was more significant with polyethylene coated paperboard and with thin deposited layers (shorter ALD process). SiO₂ performed similarly to Al₂O₃ with the PE coated board when it comes to the oxygen barrier, while the performance of SiO₂ with the biopolymer-coated board was more moderate. The effect of corona pre-treatment was negligible or even negative with the biopolymer-coated board. The ALD film growth and the effect of corona treatment on different substrates require further investigation.     

Identifying a perovskite phase in rare-earth nickelates using X-ray photoelectron spectroscopy

We demonstrate a practical way to identify the presence of a perovskite phase in rare-earth nickelates (RNiO₃) using X-ray photoelectron spectroscopy (XPS). By varying the calcination temperature, we prepared RNiO₃ powders with different degrees of chemical reaction. We found that perovskite RNiO₃ becomes predominant after high-temperature calcination (≥1,000 °C) in X-ray diffraction and XPS (at Ni 3p and O 1s edges) measurements. While the observed spectra at the Ni 3p edge are similar for all powders, a sizable difference was observed in the O 1s-edge spectra depending on the calcination temperature. With the formation of a perovskite phase with a trivalent Ni³⁺ state, an XPS peak corresponding to oxygen ions in the perovskite lattice distinctly emerges. Our work shows that the Ni³⁺ state cannot be determined by analyzing the Ni 3p edge solely and rather, the O 1s edge should be simultaneously monitored for explicit identification.     

等离子增强原子层沉积低温生长GaN薄膜

采用等离子增强原子层沉积技术在低温下于单晶硅衬底上成功生长了Ga N多晶薄膜,利用椭圆偏振仪、低角度掠入射X射线衍射仪、X射线光电子能谱仪对薄膜样品的生长速率、晶体结构及薄膜成分进行了表征和分析.结果表明,等离子增强原子层沉积技术生长Ga N的温度窗口为210—270?C,薄膜在较高生长温度下呈多晶态,在较低温度下呈非晶态;薄膜中N元素与大部分Ga元素结合成N—Ga键生成Ga N,有少量的Ga元素以Ga—O键存在,多晶Ga N薄膜含有少量非晶态Ga_2O_3.     

Near surface composition of some alloys by X-ray photoelectron spectroscopy

Chemical compositions of the alloys of CuNi (Cu_0.10Ni_0.90, Cu_0.30Ni_0.70, Cu_0.70Ni_0.30) and BiSb (Bi_0.80Sb_0.20, Bi_0.64Sb_0.34, Bi_0.55Sb_0.45) are determined by X-ray photoelectron spectroscopy. The stoichiometries are determined and are compared with the bulk compositions. Possible sources of systematic errors contributing to the results are discussed. Errors arising out of preferential etching in these alloys have been investigated. It has been inferred from such studies that the preferential etching does not enrich the surface composition with a particular component for the two systems reported here. Quantitative results of CuNi system indicate that the surface regions of the Cu_0.70Ni_0.30 alloy is Cu-rich, although no such evidence is observed in case of BiSb system.     

Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (ΔEV) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (ΔEC) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment.     

Plasmonic tuning of aluminum doped zinc oxide nanostructures by atomic layer deposition

Currently there is a strong interest in plasmonic materials operating in the near‐infrared (NIR), however, conventional metals such as gold and silver possess high optical losses in this region. In this work we demonstrate localized surface plasmon resonances (LSPRs) with low loss in the NIR region by utilizing atomic layer deposition to deposit thin films of aluminium doped zinc oxide onto silicon nanopillars created via nanopshere lithography. The deposited films have excellent conformality and the LSPRs can be tuned from the mid‐infrared to the NIR by controlling the doping concentration, deposition temperature and nanostructure morphology. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Preparation of tantalum oxide thin films by photo-assisted atomic layer deposition

Tantalum oxide thin films were prepared by photo-assisted atomic layer deposition (Photo-ALD) in the substrate temperature range of 170–400 °C using Ta(OC₂H₅)₅ and H₂O as precursors. The constant growth rates of 0.42 and 0.47 Å per cycle were achieved for the films grown by normal ALD and Photo-ALD, respectively. The increased growth rate in Photo-ALD is probably due to the reactive surface by photon energy and faster surface reaction. In Photo-ALD, however, the constant growth rate started at lower temperature of 30 °C and one cycle time shortened up to 5.7 s than that of normal ALD. The films grown by normal ALD and Photo-ALD were amorphous and very smooth (0.21–0.35 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. Also, the refractive index was found to be 2.12–2.16 at the substrate temperature of 190–300 °C, similar to that of the film grown by normal ALD. However, the remarkably low leakage current density of 0.6×10⁻⁶ A/cm² to 1×10⁻⁶ A/cm² at applied field of 1 MV/cm is several order of magnitude smaller than that of normal ALD, probably due to the presence of reactive atom species.     

Sb掺杂SrTio3透明导电薄膜的光电子能谱研究

用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1-xSbxO3(x=0.05,0.10,0.15,0.20)薄膜的电子结构.薄膜由紫外脉冲激光淀积在SrTiO3(001)单晶衬底上.该薄膜系列在可见光波段透明,透过率均超过90%.其导电性与掺杂浓度有关,当Sb掺杂浓度x=0.05时,薄膜显示金属型导电性.X射线光电子能谱和同步辐射光电子能谱研究结果表明,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级.浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电 关键词： 光电子能谱 光学透过率 脉冲激光沉积薄膜     

Synchrotron radiation photoelectron spectroscopy study of metal-oxide thin film catalysts: Pt-CeO2 coated CNTs

The interaction of Pt with CeO₂ layers was investigated by using high resolution hard X-ray photoelectron spectroscopy. Pt doped CeO₂ layers were deposited simultaneously by rf-magnetron sputtering on a SiO₂/Si substrate and carbon nanotubes (CNTs) grown on a carbon diffusion layer of a polymer membrane fuel cell. In the case of the CNT support photoelectron spectra showed the formation of ionic platinum rich cerium oxide with Pt^2+,4+ species, and with the Pt²⁺/Pt⁴⁺ ratio strongly dependent on the amount of platinum. Ce reveals 4+/3+ mixed valent character with Ce³⁺ concentration increasing with Pt content. In the case of the SiO₂/Si substrate the film revealed Ce⁴⁺ and Pt⁴⁺ species only.     

等离子增强原子层沉积低温生长AlN薄膜

采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜, 利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、 X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析, 结果表明, 采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200 ℃, 薄膜表面平整光滑, 具有六方纤锌矿结构与(100)择优取向, Al_2p与N_1S的特征峰分别为74.1 eV与397.0 eV, 薄膜中Al元素与N元素以Al-N键相结合, 且成分均匀性良好. 关键词： 氮化铝 等离子增强原子层沉积 低温生长 晶态薄膜     

Multiplet splitting patterns exhibited by the first row transition metal oxides in X-ray photoelectron spectroscopy

High resolution photoelectron spectra from transition metal ions in TiO₂, V₂O₅, VO₂, V₂O₃, MnO, Mn₂O₃, MnO₂, Cr₂O₃, FeO, CoO, NiO, CuO, Cu₂O, FeSrO₃, and Cu doped CaTiO₃ were re-examined using a constrained curve fitting approach. Effective fits of the multiplet splitting present could be attained for the oxides with unfilled 3d bands if multiple final states were assumed. The type of transitions implied, also suggest the classification of these oxides during core level photoelectron emission as either; Mott–Hubbard (V₂O₅, VO₂, V₂O₃, Cr₂O₃, and FeO), intermediate (MnO, Mn₂O₃, and MnO₂) or charge transfer type compounds (FeSrO₃, CoO, NiO, CuO and Cu doped CaTiO₃). These transitions along with relationships defining the splitting energy with respect to the total spin and binding energy are discussed.     

X-ray photoelectron spectroscopy characterization of oxidated Si particles formed by pulsed ion-beam ablation

X-ray photoelectron spectroscopy (XPS) is used to probe oxidation states of Si species in particles deposited using a pulsed ion-beam evaporation method. The effects of He ambient gas, ion beam intensity and post-treatments on the oxides composition and oxygen content have been studied. It is found that presence of He ambient gas led to a profound oxidation of Si species as compared to that prepared in vacuum at the same ion-beam ablation energy, i.e. both increase of SiO₂ component and oxygen concentration in the oxides coverage. The deposition in He also resulted in an increase of oxygen concentration even under lower ablation intensity, but a higher Si suboxides concentration. It is revealed that the reaction between Si and O was controlled by the ion beam intensity (temperature of Si plasma) and the gas ambient (collision probability of Si and O species). The difference in structure of oxide layers for samples obtained under various conditions is discussed based on the results of XPS analyses.     

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al_2O_3 films

Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.     

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

The surface composition of as-grown and annealed ZnO nanorods arrays (ZNAs) grown by a two-step chemical bath deposition method has been investigated by X-ray photoelectron spectroscopy (XPS). XPS confirms the presence of OH bonds and specific chemisorbed oxygen on the surface of ZNAs, as well as H bonds on surfaces which has been first time observed in the XPS spectra. The experimental results indicated that the OH and H bonds play the dominant role in facilitating surface recombination but specific chemisorbed oxygen also likely affect the surface recombination. Annealing can largely remove the OH and H bonds and transform the composition of the other chemisorbed oxygen at the surface to more closely resemble that of high temperature grown ZNAs, all of which suppresses surface recombination according to time-resolved photoluminescence measurements.     

Characterization and application in XRF of HfO_2-coated glass monocapillary based on atomic layer deposition

Coating a glass monocapillary x-ray optics with high-density film is a promising way to improve transmission characteristics. For a long time, it has been a challenge to coat a high-density film in the inside of monocapillary with an extremely high length-to-diameter ratio. In this work, Hf O2 film is deposited on the inner wall of a tapered glass monocapillary with length 9.9 cm, entrance diameter 596.4 μm, and exit diameter 402.3 μm by atomic layer deposition. The coated and uncoated monocapillaries are studied by the transmission process of x-rays with energy from 5 ke V to 100 ke V and the x-ray fluorescence(XRF) spectra of a Mo sample are detected. Improved transmission characteristics have been obtained for the Hf O_2-coated monocapillary. The energy upper limit of focused x-rays increases from 18.1 ke V to 33.0 ke V and the ‘penetration halo' is suppressed to some extent. The XRF spectrum presents two stronger peaks at ～ 17.4 ke V and～ 19.6 ke V which are considered as the characteristic x-rays of Mo K_α and Mo K_β. These results reveal that more higher energy x-rays from the W x-ray tube are totally reflected on the inner wall of the Hf O_2-coated glass monocapillary due to the increase of total reflection critical angle. This work is significant for more applications of monocapillary in higher energy x-ray field.     

X-ray photoelectron and X-ray Auger electron spectroscopy studies of heavy ion irradiated C60 films

The influence of 200 MeV Au ion irradiation on the surface properties of polycrystalline fullerene films has been investigated. The X-ray photoelectron and X-ray Auger electron spectroscopies are employed to study the ion-induced modification of the fullerene, near the surface region. The shift of C 1s core level and decrease in intensity of shake-up satellite were used to investigate the structural changes (like sp² to sp³ conversion) and reduction of π electrons, respectively, under heavy ion irradiation. Further, X-ray Auger electron spectroscopy was employed to investigate hybridization conversion qualitatively as a function of ion fluence.     

Valence band and core level X-ray photoelectron spectroscopy of lead sulfide nanoparticle-polymer composites

Valence band and core level X-ray photoelectron spectroscopy (XPS) were used to probe lead sulfide (PbS) nanoparticle-polymer nanocomposites. Composite materials were prepared by trapping commercially available monodisperse 3 and 10 nm PbS nanoparticles in two polymers, the non-conducting polymer, polystyrene, and the conjugated polymer, poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene (referred to below as MEH-PPV). The nanocomposites prepared from commercial nanoparticles underwent oxidation, mainly to form lead sulfate. However, the narrow size distributions of the commercial nanoparticles allowed observation of distinct changes in the valence band from the 3 to 10 nm nanoparticles. Nanocomposites of 2-5 and 4-7 nm PbS nanoparticles were synthesized by growing the particles in poly(vinyl alcohol) (referred to below as PVA) and MEH-PPV, respectively. These composites both indicated the formation of lead sulfide nanoparticles. Furthermore, the XP spectra for the PVA/PbS composite displayed bonding between the PbS nanoparticles and the polymer while MEH-PPV showed no PbS-polymer bonding. The nanoparticles synthesized in MEH-PPV did not undergo oxidation. The particle size distributions of the synthesized nanoparticles were too broad to display size-dependent changes in the valence band.