Effect of BiFeO3 addition on Bi2O3–ZnO–Nb2O5 based ceramics

In this paper, low temperature sintering of the Bi₂(Zn_1/3Nb_2/3)₂O₇ (β-BZN) dielectric ceramics was studied with the use of BiFeO₃ as a sintering aid. The effects of BiFeO₃ contents and the sintering temperature on the phase structure, density and dielectric properties were investigated. The results showed that the sintering temperature could be decreased and the dielectric properties could be retained by the addition of BiFeO₃. The structure of BiFeO₃ doped β-BZN was still the monoclinic pyrochlore phase. The sintering temperature of BiFeO₃ doped β-BZN ceramics was reduced from 1000 °C to 920 °C. In the case of 0.15 wt.% BiFeO₃ addition, the β-BZN ceramics sintered at 920 °C exhibited good dielectric properties, which were listed as follows: ε_r = 79 and tan δ = 0.00086 at a frequency of 1 MHz. The obtained properties make this composition to be a good candidate for the LTCC application.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Structural property of CsCl-type sodium chloride under pressure

The structure and equation of state of CsCl-type sodium chloride have been determined using high-pressure powder X-ray diffraction from 32 to 134 GPa. The CsCl-type phase remains stable over this entire pressure range. Pressure-volume data can be fitted with a Vinet equation of state with K_30 GPa=135.1 GPa, K′_30 GPa=3.9, and V_30 GPa=27.70 Å³. The nearest-neighbour distance between sodium and chlorine atoms decreased as pressure increased. Significant discrepancies of nearest-neighbour distance between previous theoretical predictions and this study were observed at pressures higher than 70 GPa.     

Chloromethane surface chemistry on Fe3O4(1 1 1)-(2 × 2): A thermal desorption spectrometry comparison of CCl4, CBr2Cl2, and CH2Cl2

The surface chemistry of CBr₂Cl₂ on the Fe₃O₄(1 1 1)-(2 × 2) selvedge of single-crystal α-Fe₂O₃(0 0 0 1) has been investigated using temperature programmed reaction and desorption (TPR/D) measurements. The spectra obtained in this case show that strong chemisorption occurs and that a series of adsorbed halogenated reaction products are present. By comparison, studies of the adsorbed phase of CH₂Cl₂ show that only physisorption occurs. The TPR/D spectra of CBr₂Cl₂ show that dissociative formation of CCl₂ followed by its reaction with lattice oxygen is central to the monolayer reaction chemistry in this chloromethane. The branching ratios of the various desorbed products are compared with those obtained from CCl₄ adsorbed on the same (2 × 2) surface.     

Spin glass behavior and critical analysis across the magnetic phase transition in Gd2CoMnO6: dc magnetization and ac susceptibility study

We report here on critical analysis across magnetic phase transition and spin dynamics in Gd₂CoMnO₆. We found that this material behaves differently below and above the applied magnetic field of 20 kOe. The magnetic phase transition switches from nearly mean-field type to unusual class and T_c shifts towards the high temperature above 20 kOe field. The nature of the magnetic phase transition is explored by carrying out critical analysis at low as well as at high magnetic field. The critical exponents obtained at low field using Kouvel-Fisher method are β = 0.65 (2) γ = 0.90 (2), δ = 2.43 and T_c = 120 K. Apparently, these values of critical exponents appear close to mean-field model. For high field the critical exponents are β = 1.24 (2) γ = 0.64 (5), δ = 1.51 (3) and T_c = 128 K. The critical exponents show significant deviation from any universal class. This switchover in the nature of the magnetic phase transition is unique and not seen in many compounds. The formation of non-Griffiths-like clusters in this compound can be a reason for such unique behavior. Further, ac susceptibility has been measured to understand the spin dynamics in detail. The dispersion of frequency-dependent χ_ac below T_c confirms a spin glass state in this material. The observed value of τ_o and T_o indicate the slow dynamic spin which is caused by co-existence of Co/Mn spin magnetic moments. The magneto-caloric effect is also presented for Gd₂CoMnO₆ in this study. The magnetic study and critical analysis across the phase transition reveal a switchover in the nature of phase transition in this material. A non-Griffiths like cluster formation above T_c is found and dynamic susceptibility study reveals a spin glass state below T_c in Gd₂CoMnO₆.     

Chirped quantum cascade laser induced rapid passage signatures in an optically thick gas

We report observations of rapid passage signals induced in samples of N₂O and CH₄ present in a multipass cell with an optical path length of 5 m. The effect of laser power and chirp rate upon the signals has been studied by utilising two different chirped quantum cascade lasers operating around 8 μm. The rapid passage signals exhibit an increasing delay in the switch from absorption to emission as a function of increased gas pressure (up to 8 Torr of gas). By comparing a selection of transitions in N₂O and CH₄, we show that, unlike ammonia, this ‘pressure shift’ is independent of the transition dipole moment, spectroscopic branch probed and laser chirp rate. As the transition dipole moment is much larger in nitrous oxide than methane, we believe that this indicates that N₂O–N₂O collisions are more efficient at removing coherence from the polarised sample than CH₄–CH₄ collisions. We have also observed this pressure shift in a short path length of 40 cm, although with a much reduced value, indicating that propagation effects are important in this optically thick minimally damped system.     

Experimental and numerical study of product gas and N2O emission characteristics of ammonia/hydrogen/air premixed laminar flames stabilized in a stagnation flow

In order to achieve carbon neutrality, the use of ammonia as a fuel for power generation is highly anticipated. The utilization of a binary fuel consisting of ammonia and hydrogen can address the weak flame characteristics of ammonia. In this study, the product gas characteristics of ammonia/hydrogen/air premixed laminar flames stabilized in a stagnation flow were experimentally and numerically investigated for various equivalence ratios for the first time. A trade-off relationship between NO and unburnt ammonia was observed at slightly rich conditions. At lean conditions, NO reached a maximum value of 8,700 ppm, which was larger than that of pure ammonia/air flames. The mole fraction of nitrous oxide (N₂O) which has large global warming potential rapidly increased around the equivalence ratio of 0.6, which was attributed to the effect of a decrease in flame temperature downstream of the reaction zone owing to heat loss to the stagnation wall. To understand this effect further, numerical simulations of ammonia/hydrogen/air flames were conducted using the stagnation flame model for various equivalence ratios and stagnation wall temperatures. The results show that the important reactions for N₂O production and reductions are NH +NO = N₂O + H, N₂O + H = N₂ + OH, and N₂O (+M) = N₂ + O (+M). A decrease in flame temperature in the post flame region inhibited N₂O reduction through N₂O (+M) = N₂ + O (+M) because this reaction has a large temperature dependence, and thus N₂O was detected as a product gas. N₂O is reduced through N₂O (+M) = N₂ + O (+M) in the post flame region if the stagnation wall temperature is sufficiently high. On the other hand, it was clarified that an increase in equivalence ratio enhances H radical production and promotes N₂O reduction by H radical through the reaction of N₂O + H = N₂ + OH.     

Enhanced long-term stability of bismuth oxide-based electrolytes for operation at 500 °C

Cubic-stabilized ((DyO_1.5) _x –(WO₃) _y –(BiO_1.5)_{1 − x − y} ) electrolytes (DWSB) with much higher conductivity than (ErO_1.5)_0.2(BiO_1.5)_0.8, 20ESB, were developed through a double-doping strategy. (DyO_1.5)_0.08–(WO₃)_0.04–(BiO_1.5)_0.88, 8D4WSB, is the highest conductivity composition but underwent the greatest conductivity degradation at 500 °C due to its low total dopant concentration. The effect of dopant composition on conductivity behavior with time at 500 °C demonstrates that there is a trade-off between initial conductivity and long-term stability at this temperature. Therefore, it is necessary to find an optimal total and relative concentration of dopants to provide the enhanced long-term stability needed to make this DWSB electrolyte system feasible for 500 °C operation. To this end, it was found that (DyO_1.5)_0.25–(WO₃)_0.05–(BiO_1.5)_0.70, 25D5WSB, maintained a conductivity of 0.0068 S/cm without appreciable degradation after annealing at 500 °C for 500 h. Moreover, since bismuth oxide-based electrolytes do not exhibit any grain boundary impedance, the total conductivity of 25D5WSB is significantly higher than that of alternate electrolytes (e.g., GDC: Gd_0.1Ce_0.9O_1.95) at this temperature.     

Surface and redox chemistry of Sm0.95Ce0.05Fe1 − xNixO3 − δ perovskites

A new series of perovskite materials with formula Sm_0.95Ce_0.05Fe_1 − xNi_xO_3 − δ (0 ≤ x ≤ 0.10) has been prepared by sol-gel combustion via a citrate precursor route. X-ray diffraction data showed that materials prepared by this method had a single orthorhombic phase belonging to the Pnma (62) space group. The study of powders sintered in air and in reducing atmospheres reveals that these materials do not show phase separation in air (up to 1350 °C) nor under 5% v/v H₂/N₂ (up to 700 °C), but a phase separation of Sm₂O₃ does occur at and above 800 °C under 5% v/v H₂/N₂ without deterioration of the perovskite phase. The surfaces of all the powders (fresh, in-situ reduced and ex-situ reduced) were Sm rich, and multiple oxidation states for Fe were observed. XP analysis of in-situ reduced samples (800 °C and above) shows that metallic Fe forms in all nickel doped materials except x = 0.07. The surface oxygen vacancies and percentages of lattice and adsorbed oxygen for this series of Ni doped materials were determined and the oxygen recapturing ability is explained in terms of the multiple oxidation states of Fe.     

Surface and transport studies on La0.7Ba0.3MnO3:SnO2 bilayer

We report on study of morphology, optical contrast and transport characteristics of La_0.7Ba_0.3MnO₃ (LBMO) manganite thin films bilayered with SnO₂ on Si (0 0 1) substrate, synthesized using pulsed laser deposition system. X-ray diffraction study reveals that both LBMO and SnO₂ show polycrystalline growth over the substrate. Atomic force microscopy shows interesting pyramidal structures of LBMO of size ∼2 μm × 1 μm × 0.1 μm. On the other hand, SnO₂ grows in the form of close packed cylindrical clusters of ∼200 nm radius. Near-field optical microscopy (NSOM) study using 532 nm laser reveal that optical NSOM output intensity in LBMO is four times less than SnO₂ signal. Transport characterizations show that this bilayer configuration exhibit non-linear current-voltage characteristics from 300 upto 50 K. The nature becomes linear below this temperature. The results project the system as a promising candidate in non-conventional device category in the area of spintronics.     

Structure and NLO property relationship in a novel chalcone co-crystal

Single crystals of a chalcone co-crystal (C₁₈H₁₉NO₄/C₁₇H₁₆NO₃Br; 0.972/0.028) have been grown by slow evaporation from solution. The powder second harmonic generation (SHG) efficiency of this chalcone co-crystal is 7 times that of urea. The dependence of second harmonic (SH) intensity on particle size revealed the existence of phase matching direction in this crystal. The large SHG efficiency observed is mainly due to the unidirectional alignment of molecular dipoles, in which the dipole moment of each molecule adds to establish a net polarization. The weak N–H⋅⋅⋅O hydrogen-bond interactions help to stabilize the noncentrosymmetric crystal packing and also contribute partly to the SHG. The better thermal stability, transparency and high laser damage resistance (>1.5 GW cm⁻² at 532 nm, 8 ns) of this chalcone co-crystal indicate that it is a promising material for frequency doubling of diode lasers down to 470 nm. This molecule also shows a third-order NLO response and good optical limiting property of 8 ns laser pulses at 532 nm. The mechanism for optical limiting in this chalcone was attributed to two-photon induced excited state absorption that leads to reverse saturable absorption. The structure–property relationship in this chalcone and related compounds is discussed based on the experimental results and semiempherical hyperpolarizability calculations.     

Application of ultrasonic wave to clean the surface of the TiO2 nanotubes prepared by the electrochemical anodization

In this study, the TiO₂ nanotubes were fabricated by electrochemical anodization in a NH₄F/Na₂SO₄/PEG400/H₂O electrolyte system. Ultrasonic wave (80 W, 40 kHz) was used to clean the surface of TiO₂ nanotube arrays in the medium of water after the completion of the anodization. Surface morphology (FESEM) and X-ray diffraction spectrum of the nanotubes treated by sonication at 0 min, 9 min, 40 min and 60 min were compared. The experimental results showed that the precipitate on the surface of the nanotube arrays could be removed by the ultrasonic wave. The treating time had an influence on the precipitate removal and 9 min (corresponding to 12 Wh) is the suitable time for surface cleaning of the TiO₂ nanotubes on this experimental condition.     

Study of uranium isotope separation using CO2 laser and CO laser

First, the kinetic investigation of UF₆ + HCl reaction and the isotopic selectivity under CO laser irradiation is performed. On this investigation, the kinetics of UF₆ + HCl reaction by using an intracativity CO laser and CO₂ laser irradiation system, and the isotopic selectivity for this process are studied theoretically. It is found that under the resonant CO laser and CO₂ laser irradiations, the laser-catalyzed reaction rate can increase, and a good selectivity can be achieved. The uranium isotope separation factors β calculated are about 2.44 ∼ 4.05 at laser intensity 50 ∼ 100 W cm⁻² and temperature 235 K.     

A new optical method for measuring the electron-phonon interaction parameter λ〈Ω2〉 using the spectral dependence of the relaxation rate

The spectral dependence of the electron-phonon relaxation rate γ_e−ph(ℏω) in metals is studied in pump-supercontinuum-probe (PSCP) experiments with femtosecond time resolution. Investigation of this spectral dependence, which exhibits a substantial slowing of the relaxation rate γ_e−ph(ℏω) near the Fermi level E _F , using the parametrization γ_e−ph(ℏω)∝λ〈Ω²〉 (ℏω−E _F )² makes it possible to determine directly the electron-phonon interaction parameter λ〈Ω²〉. The parameter λ〈Ω²〉 for YBa₂Cu₃O_7−δ is analyzed using this method. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 5, 329–332 (10 September 1999)     

Synthesis of ultrathin semiconducting iron silicide epilayers on Si(1 1 1) by high-temperature flash

In this work ultrathin iron silicide epilayers were obtained by the reaction of iron contaminants with the Si(1 1 1) substrate atoms during high-temperature flash. After repeated flashing at about 1125 °C, reflection high-energy electron diffraction indicated silicide formation. Scanning tunneling microscopy revealed highly ordered surface superstructure interrupted, however, by a number of extended defects. Atomic-resolution bias-dependent imaging demonstrated a complex nature of this superstructure with double-hexagonal symmetry and (2√3×2√3)-R30° periodicity. Among the possible candidate phases, including metastable FeSi₂ with a CaF₂ structure and FeSi_1+x with a CsCl structure, the best match of the interatomic distances to the measured 14.4 Å × 14.4 Å unit cell dimensions pointed to the hexagonal Fe₂Si (Fe₂Si prototype) high-temperature phase. The fact that this phase was obtained by an unusually high-temperature flash, and that neither its reconstruction nor its semiconducting band-gap of about 1.0 ± 0.2 eV (as deduced form the I-V curves obtained by scanning tunneling spectroscopy) has ever been reported, supports such identification. Due to its semiconducting properties, this phase may attract interest, perhaps as an alternative to β-FeSi₂.     

Shock tube study of the interaction between ammonia and nitric oxide at high temperatures using laser absorption spectroscopy

The interaction between ammonia (NH₃) and nitric oxide (NO) at high temperatures is studied in this work using a shock tube combined with laser absorption diagnostics. The system simultaneously measured the NH₃ and NO time-histories during the reaction processes of the shock-heated NH₃/NO/CO/Ar mixtures (NH₃:NO ≈ 0.9:1.0 and 1.4:1.0). The absorption cross-sections of NH₃ near 1122.10 cm^–1 and NO at 1900.52 cm^–1 (characterized in this study) were used for measuring NH₃ and NO time-histories with the temperature measured by two CO absorption lines. The measured NH₃ and NO time-histories at 1614–1968 K and 2.4–2.8 atm were compared with predictions of seven recent kinetics models. The predictions that based on different mechanisms are very different and the measured profiles are within the range of the predictions. The Glarborg, NUI Galway Syngas-NOx, and Mathieu mechanisms give the closest predictions to the measurements. Kinetics analyses indicate that the NH₃ and NO consumption rates are extremely sensitive to the rate constants and branching ratio of NH₂ + NO = N₂ + H₂O and NH₂ + NO = NNH + OH, which are more reliably represented in the Glarborg and NUI Galway Syngas-NOx mechanisms. The performances of Glarborg mechanisms at lower initial temperatures can be apparently improved by revising the rate constants and branching ratio of NH₂ + NO = N₂ + H₂O and NH₂ + NO = NNH + OH. These two reactions are also the primary pathways for NO reduction and NH₃ is mainly consumed via NH₃ + OH = NH₂ + H₂O and NH₃ + H = NH₂ + H₂. Trace amounts of NO₂ and N₂O impurities decompose to form O radical followed by the generation of OH radical via H-abstraction reactions, which significantly affects the predictions of NH₃ and NO according to kinetics analyses.     

Effects of O2/Ar flow ratio on the alcohol sensitivity of tin oxide film

The aim of this study is to find the effects of oxygen flow rate during manufacturing on the sensitivity of SnO₂ (tin oxide) thin films to ethanol (C₂H₅OH). In this study, an RF sputtering process was employed to fabricate the SnO₂ thin films. The SnO₂ was deposited on gold electrode silicon microchips. A target composed of SnO₂ doped with 1 at.% Li was used with a working pressure of 3 mTorr. The RF power was fixed at 150 W. The reaction gas was a mixture of argon and oxygen. The total flow rate was constant at 50 sccm with the O₂/Ar ratio varying from 0.2 to 0.8. An annealing heat treatment was employed at 400 °C for 1 h to stabilize the properties of the films. The sensitivity of the film to ethanol was tested by placing the micro-reactor device on a hot plate, heated to 300 °C, and measuring the variation of electrical resistivity of the film with and without the presence of ethanol. The results show that an O₂/Ar flow ratio of 0.2 produces films with the highest ethanol sensitivity. Before heat treating, the ethanol sensitivity was 126. After heat treating at 400 °C for 1 h, the sensitivity decreased to 104.     

Analysis of the Ge1−xCx films deposited by MFMST

Ge_1−xC_x films deposited by using a medium frequency magnetron sputtering technique (MFMST) were analyzed with X-ray photoelectron and Raman spectroscopy. The deposited Ge_1−xC_x films consist of C, Ge, GeC and GeO_y. The GeC content in the Ge_1−xC_x films linearly decreases, and the C content linearly increases with increasing deposition temperature from 150 to 350 °C. The GeC content decreases from 11.6% at a substrate bias of 250 V to a lowest value of 9.6% at 350 V, then increases again to 10.4% at 450 V. While the C content increases from 49.0% at the bias of 250 V to a largest value of 58.0% at 350 V and then maintains this level at 450 V. It is found that selecting a bias parameter seems more effective than deposition temperature if we want to obtain a higher content of GeC in the deposited films. In addition, a new method is presented in this paper to estimate the changes of GeC content in the Ge_1−xC_x films by observing the shifts of Ge-Ge LO phonon peak in Raman spectra for the Ge_1−xC_x films. The related mechanism is also discussed in this paper.     

Electrical transport and high thermoelectric properties of PbTe doped with Bi2Te3 prepared by HPHT

In this paper, n-type lead telluride (PbTe) compounds doped with Bi₂Te₃ have been successfully prepared by high pressure and high temperature (HPHT) technique. The composition-dependent thermoelectric properties of PbTe doped with Bi₂Te₃ have been studied at room temperature. The figure-of-merit, Z, for PbTe is very sentivite to the dopants, which could be improved largely although the doped content of Bi₂Te₃ is very small (<0.08 mol%). In addition, the maximum value reaches to 9.3×10⁻⁴ K⁻¹, which is about 20% higher than that of PbTe alloyed with Bi₂Te₃ sintered at ambient pressure (7.6×10⁻⁴ K⁻¹) and several times higher than that of small grain size PbTe containing other dopants. The improved thermoelectric performance in this study may be due to the effect of high pressure and the low lattice thermal conductivity resulting from Bi₂Te₃ as source of dopants.     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.