Phase coherent transmission through interacting mesoscopic systems

This is a review of the phase coherent transmission through interacting mesoscopic conductors. As a paradigm we study the transmission amplitude and the dephasing rate for electron transport through a quantum dot in the Coulomb blockade regime. We summarize experimental and theoretical work devoted to the phase of the transmission amplitude. It is shown that the evolution of the transmission phase may be dominated by non-universal features in the short-time dynamics of the quantum dot. The controlled dephasing in Coulomb-coupled conductors is investigated. Examples comprise a single or multiple quantum dots in close vicinity to a quantum point contact. The current through the quantum point contact “measures” the state of the dots and causes dephasing. The dephasing rate is derived using widely different theoretical approaches. The Coulomb coupling between mesoscopic conductors may prove useful for future work on electron coherence and quantum computing.     

Wave function multifractality and dephasing at metal–insulator and quantum Hall transitions

We analyze the critical behavior of the dephasing rate induced by short-range electron–electron interaction near an Anderson transition of metal–insulator or quantum Hall type. The corresponding exponent characterizes the scaling of the transition width with temperature. Assuming no spin degeneracy, the critical behavior can be studied by performing the scaling analysis in the vicinity of the non-interacting fixed point, since the latter is stable with respect to the interaction. We combine an analytical treatment (that includes the identification of operators responsible for dephasing in the formalism of the non-linear sigma-model and the corresponding renormalization-group analysis in 2 + ? dimensions) with numerical simulations on the Chalker–Coddington network model of the quantum Hall transition. Finally, we discuss the current understanding of the Coulomb interaction case and the available experimental data.     

Optical tailoring of electron spin coherence in quantum dots

We address the precession of an ensemble of electron spins, each confined in a (In, Ga)As/GaAs self-assembled quantum dot. The quantum dot inhomogeneity is directly reflected in the precession of the optically oriented electron spins about an external magnetic field, which is subject to fast dephasing on a nanoseconds time scale. Proper periodic laser excitation allows synchronization of the electron spin precessions with the excitation cycle. The experimental conditions can be tailored such that eventually all (about a million) electron spins that are excited by the laser precess with a single frequency. In this regime the ensemble can be exploited during the single electron spin coherence times being in the microseconds range.     

二维拓扑绝缘体退相干效应研究

拓扑绝缘体是当前凝聚态物理研究的热点.退相干效应对该体系的影响的研究不仅有重要的理论意义,而且也是实现未来量子器件的不可或缺的前期工作.文章作者从理论上研究了退相干对二维拓扑绝缘体特别是量子自旋霍尔效应的影响.研究结果表明,作为量子自旋霍尔效应的标志的量子化纵向电阻平台对不破坏自旋记忆的退相干效应(普通退相干)不敏感,但却对破坏自旋记忆的退相干效应(自旋退相干)非常敏感.因此,该量子化平台只能在尺寸小于自旋退相干长度的介观样品中存在,从而解释了量子自旋霍尔效应实验中所观测到的结果(见Science,2007,318:766).同时,文章作者还定义了一个新的物理量,即自旋霍尔电阻,并发现该自旋霍尔电阻也有量子化平台.特别是该量子化平台对两种类型的退相干都不敏感.这说明在宏观样品中也能观测到自旋霍尔电阻的量子化平台,因此更能全面地反映量子自旋霍尔效应的拓扑特性.     

Coherent spin dynamics of different density high mobility two-dimensional electron gas in a GaAs quantum well

We have addressed the dependence of quasi-two-dimensional electron spin dephasing time on the electron gas density in a 17-nm GaAs quantum well using the time-resolved magneto-optical Kerr effect. A superlinear increase in the electron dephasing time with decreasing electron density has been found. The degree of electron spin relaxation anisotropy has been measured and the dependence of spin-orbit splitting on electron gas density has been determined.     

Anomalous spin dephasing in (110) GaAs quantum wells: anisotropy and intersubband effects

A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on a (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along [110]. The spin lifetimes of both spin orientations decrease monotonically above temperatures of 80 and 120 K, respectively. The decrease is very surprising for spins along the [110] direction and cannot be explained by the usual Dyakonov-Perel dephasing mechanism. A novel spin dephasing mechanism is put forward that is based on scattering of electrons between different quantum well subbands.     

Probing spin entanglement by gate-voltage-controlled interference of current correlation in quantum spin Hall insulators

We propose an entanglement detector composed of two quantum spin Hall insulators and a side gate deposited on one of the edge channels. For an ac gate voltage, the differential noise contributed from the entangled electron pairs exhibits the nontrivial step structures, from which the spin entanglement concurrence can be easily obtained. The possible spin dephasing effects in the quantum spin Hall insulators are also included.     

Spin echo of a single electron spin in a quantum dot

We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession around a random effective field from the nuclear spins in the host material. We reverse this dephasing to a large extent via a spin-echo pulse, and find a spin-echo decay time of about 0.5 micros at 70 mT. These results are in the range of theoretical predictions of the electron spin coherence time governed by the electron-nuclear dynamics.     

基于量子点接触的开放双量子点系统电子转移特性

基于量子点接触探测器(QPC)理论上研究了双量子点(DQD)系统在耗散环境和纯退相环境影响下的电子转移特性.结果表明,耗散环境中探测器导致的退相干会增大平均电流和Fano factor随时间演化的值,并观察到量子芝诺效应的存在.在对称的DQD情况下,弛豫减小了平均电流随时间演化的震荡振幅.在非对称的DQD情况下,弛豫降低了Fano factor随时间演化的峰值.纯退相环境中测量会阻碍共隧穿过程中不同电流通道之间的转换,导致Fano factor的极高值.在对称的DQD情况下,增大纯退相速率会提高Fano factor.在非对称的DQD情况下,动力学随时间的演化对纯退相环境不敏感.另外,还发现探测器内n个电子的转移几率只受QPC与DQD耦合的影响.我们的结论可以为实验工作者研究电子输运特性提供理论参考.     

Spin dephasing of a two-dimensional electron gas in a GaAs quantum well near odd filling factors

The coherent spin dynamics of a two-dimensional electron gas in a GaAs/AlGaAs quantum well is experimentally studied near the filling factors ν = 3 and 1. The nonmonotonic character of the dependence of the spin dephasing time of a Goldstone spin exciton on the filling factor is found experimentally. The observed effect can be due to the formation of a new spin relaxation channel, when the main state of the two-dimensional electron system is a spin-textured liquid.     

Dephasing of optically generated electron spins in semiconductors

Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

Coherent spin dynamics of electrons and excitons in nanostructures (a review)

The studies of spin phenomena in semiconductor low-dimensional systems have grown into the rapidly developing area of the condensed matter physics: spintronics. The most urgent problems in this area, both fundamental and applied, are the creation of charge carrier spin polarization and its detection, as well as electron spin control by nonmagnetic methods. Here, we present a review of recent achievements in the studies of spin dynamics of electrons, holes, and their complexes in the pump-probe method. The microscopic mechanisms of spin orientation of charge carriers and their complexes by short circularly polarized optical pulses and the formation processes of the spin signals of Faraday and Kerr rotation of the probe pulse polarization plane as well as induced ellipticity are discussed. A special attention is paid to the comparison of theoretical concepts with experimental data obtained on the n-type quantum well and quantum dot array samples.     

Effective spin dephasing mechanism in confined two-dimensional topological insulators

A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional (2D) QSHE, which is simulated as quantum dots modeled by 2D massive Dirac Hamiltonian. We demonstrate that the spin dephasing effect can originate from the combination of the Rashba spin-orbit coupling and electron-phonon interaction, which gives rise to inelastic backscattering in edge states within the topological insulator quantum dots, although the time-reversal symmetry is preserved throughout. Finally, we discuss the tunneling between extended helical edge states and local edge states in the QSH quantum dots, which leads to backscattering in the extended edge states. These results can explain the more robust edge transport in InAs/GaSb QSH systems.     

Electron spin relaxation in very diluted CdMnTe quantum wells

Electron spin dephasing is studied by time-resolved Kerr rotation in n-type modulation-doped CdMnTe quantum wells with very dilute Mn content. We find good agreement between measured and calculated electron spin relaxation times, considering relaxation induced by fluctuating exchange field created by the Mn spins, and taking into account inhomogeneous heating of the Mn spins by laser pulses.     

Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells

JETP Letters - Electron spin dephasing anisotropy is studied in GaAs/AlGaAs coupled quantum wells by means of a timeresolved Kerr rotation technique. It is found that the spin dephasing rate is...     

Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation

We develop a Monte Carlo (MC) tool incorporated with the three-subband approximation model to investigate the in-plane spin-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersubband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-subband approximation model, the spin dephasing length is reduced four times under 0.125\,kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subband approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spin-dependent transport of GaAs 2-dimensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a certain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin--orbit interaction.     

Dephasing effects in topological insulators

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions,are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.     

Symmetry and spin dephasing in (110)-grown quantum wells

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer positions.     

Electron spin transitions in quantum Hall systems

A system of two-dimensional electron gas in a strong magnetic field exhibits a remarkable phenomenon known as the fractional quantum Hall effect. Rapid advances in experimental techniques and intense theoretical work for well over a decade have significantly contributed to our understanding of the mechanism behind the effect. It is now a well established fact that electron correlations are largely responsible for the occurrence of this phenomenon. In recent years, theoretical and experimental investigations have revealed that those electron correlations, which are responsible for the quantum Hall effect, are also the reason for various spin transitions in the system. In this review, we systematically follow the theoretical studies of the role spin degree of freedom play in the quantum Hall effect regime and also describe several ingenious experiments reported in recent years which are in good agreement with the emerging theoretical picture.